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Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$
Authors:
Everett D. Grimley,
Tony Schenk,
Thomas Mikolajick,
Uwe Schroeder,
James M. LeBeau
Abstract:
Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning…
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Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning transmission electron microscopy to investigate the atomic structure of boundaries in these materials. In particular, we find orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries formed throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion.
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Submitted 23 September, 2017;
originally announced September 2017.
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Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
Authors:
J. Houston Dycus,
Kelsey J. Mirrielees,
Everett D. Grimley,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
Douglas L. Irving,
James M. LeBeau
Abstract:
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used…
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When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used materials, such as group III-nitrides, have not been unambiguously resolved, even though critical properties can depend sensitively on their presence. In this work, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of native two--dimensional oxides that form on AlN and GaN surfaces. Through atomic resolution imaging and spectroscopy, we show that the oxide layers are comprised of tetrahedra--octahedra cation--oxygen units, similar to bulk $θ$--Al$_2$O$_3$ and $β$--Ga$_2$O$_3$. By applying density functional theory, we show that the observed structures are more stable than previously proposed surface oxide models. We place the impact of these observations in the context of key III-nitride growth, device issues, and the recent discovery of two-dimnesional nitrides.
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Submitted 13 August, 2017;
originally announced August 2017.
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Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3
Authors:
Reza M. Moghadam,
Zhiyong Xiao,
Kamyar Ahmadi-Majlan,
Everett D. Grimley,
Mark Bowden,
Phuong-Vu Ong,
Scott A. Chambers,
James M. Lebeau,
Xia Hong,
Peter V. Sushko,
Joseph H. Ngai
Abstract:
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-…
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The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.
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Submitted 28 February, 2017;
originally announced March 2017.
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In-situ real-space imaging of crystal surface reconstruction dynamics via electron microscopy
Authors:
Weizong Xu,
Preston C. Bowes,
Everett D. Grimley,
Douglas L. Irving,
James M. LeBeau
Abstract:
Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are important as they control reactions and mediate thin film growth. This is particularly true for complex oxides where certain terminating crystal planes are pol…
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Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are important as they control reactions and mediate thin film growth. This is particularly true for complex oxides where certain terminating crystal planes are polar and have a net dipole moment. For polar terminations, reconstruction of atoms on the surface is the central mechanism to avoid the so called polar catastrophe. This adds to the complexity of the reconstruction where charge polarization and stoichiometry govern the final surface in addition to standard thermodynamic parameters such as temperature and partial pressure. Here we present direct, in-situ determination of polar SrTiO3 (110) surfaces at temperatures up to 900 C using cross-sectional aberration corrected scanning transmission electron microscopy (STEM). Under these conditions, we observe the coexistence of various surface structures that change as a function of temperature. As the specimen temperature is lowered, the reconstructed surface evolves due to thermal mismatch with the substrate. Periodic defects, similar to dislocations, are found in these surface structures and act to relieve stress due to mismatch. Combining STEM observations and electron spectroscopy with density functional theory, we find a combination of lattice misfit and charge compensation for stabilization. Beyond the characterization of these complex reconstructions, we have developed a general framework that opens a new pathway to simultaneously investigate the surface and near surface regions of single crystals as a function of environment.
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Submitted 3 June, 2016;
originally announced June 2016.
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Direct observation of charge mediated lattice distortions in complex oxide solid solutions
Authors:
Xiahan Sang,
Everett D. Grimley,
Changning Niu,
Douglas L. Irving,
James M. LeBeau
Abstract:
Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced…
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Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced imaging methods, we observed atom column specific, picometer-scale displacements induced by local chemistry in a complex oxide solid solution. Displacements predicted from density functional theory were found to correlate with the observed experimental trends. Further analysis of bonding and charge distribution were used to clarify the mechanisms responsible for the detected structural behavior. By extending the experimental electron microscopy measurements to previously inaccessible length scales, we identified correlated atomic displacements linked to bond differences within the complex oxide structure.
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Submitted 15 September, 2014;
originally announced September 2014.
