-
Space charge limited photocurrents and transient currents in CdZnTe radiation detectors
Authors:
Katarina Ridzonova,
Eduard Belas,
Roman Grill,
Jakub Pekarek,
Petr Praus
Abstract:
We combined steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study the space charge formation in CdZnTe. Analytical as well as numerical models describing space charge limited photocurrents were developed and an excellent agreement with measured data was obtained especially with the Drift-diffusion model. Linear rise of photocurre…
▽ More
We combined steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study the space charge formation in CdZnTe. Analytical as well as numerical models describing space charge limited photocurrents were developed and an excellent agreement with measured data was obtained especially with the Drift-diffusion model. Linear rise of photocurrent at low bias was observed and ascribed to the trap** of injected holes at the region close to the cathode side. Influence of space charge formation, photoconductive gain, contribution of shallow and deep levels to photocurrent-voltage characteristics were numerically simulated. According to the measurements and calculations, recent principles used at the evaluation of detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.
△ Less
Submitted 15 January, 2020;
originally announced January 2020.
-
Electrical and Spectroscopic Properties of SiC Detectors
Authors:
Mykola Brynza,
Eduard Belas,
Petr Praus,
**drich Pipek,
Roman Grill
Abstract:
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation d…
▽ More
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium do**. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product (alpha)= 3.5E-7 cm2/V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated mobility-lifetime product (alpha)= 5.4E-6 cm2/V using AuTi/SiC/TiAu contact structure.
△ Less
Submitted 10 January, 2020;
originally announced January 2020.
-
Space charge formation in chromium compensated GaAs radiation detectors
Authors:
E. Belas,
R. Grill,
J. Pipek,
P. Praus,
J. Bok,
A. Musiienko,
P. Moravec,
O. Tolbanov,
A. Tyazhev,
A. Zarubin
Abstract:
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determ…
▽ More
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime τ = 150 ns and electron drift mobility μd = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trap** in the system with spatially variable hole conductivity.
△ Less
Submitted 3 April, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
-
Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide
Authors:
Artem Musiienko,
**drich Pipek,
Petr Praus,
Mykola Brynza,
Eduard Belas,
Bogdan Dryzhakov,
Mao-Hua Du,
Mahshid Ahmadi,
Roman Grill
Abstract:
Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in meth…
▽ More
Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time of flight (ToF) current spectroscopy. By combining the current waveform (CWF) ToF spectroscopy and the Monte Carlo (MC) simulation, three energy states were detected in the band gap of MAPbBr3. Additionally, we found the trap** and detrap** rates of free holes ranging from a few us to hundreds of us and, contrary to previous studies, a strong detrap** activity was revealed. It was shown that these traps have a significant impact on the transport properties of MAPbBr3 single crystal devices, including drift mobility and mobility-lifetime product. To demonstrate the impact of traps on the delay of free carriers, we developed a new model of the effective mobility valid for the case of multiple traps in a semiconductor. Our results provide a new insight on charge transport properties of OMHP semiconductors, which is required for further development of this class of optoelectronic devices.
△ Less
Submitted 10 December, 2019; v1 submitted 23 September, 2019;
originally announced September 2019.
-
Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites
Authors:
Artem Musiienko,
Pavel Moravec,
Roman Grill,
Petr Praus,
Igor Vasylchenko,
Jakub Pekarek,
Jeremy Tisdale,
Katarina Ridzonova,
Eduard Belas,
Lucie Abelova,
Bin Hu,
Eric Lukosi,
Mahshid Ahmadi
Abstract:
Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHPs solar cells from reaching their Shockley Queisser limit. Here, we report on deep level (DL) defects and their effect on free charge tra…
▽ More
Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHPs solar cells from reaching their Shockley Queisser limit. Here, we report on deep level (DL) defects and their effect on free charge transport properties of single crystalline methylammonium lead bromide perovskite (MAPB). In order to determine DL activation energy and capture cross section we used photo-Hall effect spectroscopy (PHES) with enhanced illumination in both steady-state and dynamic regimes. This method has shown to be convenient due to the direct DL visualization by sub-bandgap photo-excitation of trapped carriers. DLs with activation energies of 1.05 eV, 1.5 eV, and 1.9 eV above valence band were detected. The hole capture cross section was found using photoconductivity relaxation after sub-bandgap photo-excitation. We found the DL defects responsible for non-radiative recombination and its impact on band alignment for the first time. Additionally, the transport properties of MAPB single crystal is measured by Time of Flight (ToF) at several biases. The analysis of ToF measurement further confirms increase of Hall mobility and the enhancement of hole transport produced by sub-bandgap illumination in MAPB devices. Our studies provide a strong evidence on deep levels in OMHPs and opens a richer picture of the role and properties of deep levels in MAPB single crystals as a system model for the first time. The deeper knowledge of the electrical structure of OMHP could open further opportunities in the development of more feasible technology.
△ Less
Submitted 1 December, 2018;
originally announced December 2018.
-
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
Authors:
M Rejhon,
J Franc,
V Dědič,
J Pekárek,
U N Roy,
R Grill,
R B James
Abstract:
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trap**. We determined the Schottky barrier height and the Fermi level position from I-V measurem…
▽ More
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson equations, including the Shockley-Read-Hall model of the carrier trap**. We determined the Schottky barrier height and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap - one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS are favorable for high electrical charge transport.
△ Less
Submitted 1 October, 2018;
originally announced October 2018.
-
Photo-Hall effect spectroscopy with enhanced illumination in p-Cd1-xMnxTe showing negative differential photoconductivity
Authors:
A. Musiienko,
R. Grill,
P. Moravec,
P. Fochuk,
I. Vasylchenko,
H. Elhadidy,
L. Šedivý
Abstract:
We studied deep levels (DLs) in p-type CdMnTe by photo-Hall effect spectroscopy with enhanced illumination. We showed that the mobility of minority and majority carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies 0.63 eV, 0.9 eV, 1.0 eV and 1.3 eV were detected and their positions in the bandgap were verif…
▽ More
We studied deep levels (DLs) in p-type CdMnTe by photo-Hall effect spectroscopy with enhanced illumination. We showed that the mobility of minority and majority carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies 0.63 eV, 0.9 eV, 1.0 eV and 1.3 eV were detected and their positions in the bandgap were verified by comparison of photogenerated electron and hole concentrations. Deduced DL model was analyzed by numerical simulations with Shockley-Reed-Hall charge generation-recombination theory and compared with alternative DL models differing in the position of selected DLs relative to Ec and Ev. We showed that the consistent explanation of collected experimental data principally limits the applicability of alternative DLs models. We also demonstrated the importance of the extended operation photon fluxes used in the spectra acquisition for correct determination of DLs character. Negative differential photoconductivity was observed and studied by charge dynamic theoretical simulations.
△ Less
Submitted 22 December, 2017;
originally announced December 2017.
-
Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity
Authors:
A. Musiienko,
R. Grill,
P. Moravec,
G. Korcsmaros,
M. Rejhon,
J. Pekarek,
H. Elhadidy,
L. Sedivy,
I. Vasylchenko
Abstract:
Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobilit…
▽ More
Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev+1.0 eV enhancing thus potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.
△ Less
Submitted 5 October, 2017;
originally announced October 2017.
-
Efficient Charge Collection in Coplanar Grid Radiation Detectors
Authors:
Jan Kunc,
Petr Praus,
Eduard Belas,
Václav Dědič,
Jakub Pekárek,
Roman Grill
Abstract:
We have modeled laser-induced transient current waveforms in radiation coplanar grid detectors. Poisson's equation has been solved by finite element method and currents induced by photo-generated charge were obtained using Shockley-Ramo theorem. The spectral response on a radiation flux has been modeled by Monte-Carlo simulations. We show 10$\times$ improved spectral resolution of coplanar grid de…
▽ More
We have modeled laser-induced transient current waveforms in radiation coplanar grid detectors. Poisson's equation has been solved by finite element method and currents induced by photo-generated charge were obtained using Shockley-Ramo theorem. The spectral response on a radiation flux has been modeled by Monte-Carlo simulations. We show 10$\times$ improved spectral resolution of coplanar grid detector using differential signal sensing. We model the current waveform dependence on do**, depletion width, diffusion and detector shielding and their mutual dependence is discussed in terms of detector optimization. The numerical simulations are successfully compared to experimental data and further model simplifications are proposed. The space charge below electrodes and a non-homogeneous electric field on a coplanar grid anode are found to be the dominant contributions to laser-induced transient current waveforms.
△ Less
Submitted 1 February, 2017;
originally announced February 2017.
-
Magneto-resistance quantum oscillations in a magnetic two-dimensional electron gas
Authors:
J. Kunc,
B. A. Piot,
D. K. Maude,
M. Potemski,
R. Grill,
C. Betthausen,
D. Weiss,
V. Kolkovsky,
G. Karczewski,
T. Wojtowicz
Abstract:
Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts with magnetic Mn ions, can be described by incorporating the electron-Mn exchange interaction into the traditional Lifshitz-Kosevich formalism. The modified spin s…
▽ More
Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts with magnetic Mn ions, can be described by incorporating the electron-Mn exchange interaction into the traditional Lifshitz-Kosevich formalism. The modified spin splitting leads to characteristic beating pattern in the SdH oscillations, the study of which indicates the formation of Mn clusters resulting in direct anti-ferromagnetic Mn-Mn interaction. The Landau level broadening in this system shows a peculiar decrease with increasing temperature, which could be related to statistical fluctuations of the Mn concentration.
△ Less
Submitted 11 June, 2015; v1 submitted 10 June, 2015;
originally announced June 2015.
-
Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene
Authors:
M. Orlita,
C. Faugeras,
R. Grill,
A. Wysmolek,
W. Strupinski,
C. Berger,
W. A. de Heer,
G. Martinez,
M. Potemski
Abstract:
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magne…
▽ More
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with energy. This implies a surprising property of the Landau level spectrum in graphene - the number of the resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanism and carrier mobilities in the graphene system investigated.
△ Less
Submitted 20 October, 2011; v1 submitted 4 January, 2011;
originally announced January 2011.
-
Systematic investigation of influence of n-type do** on electron spin dephasing in CdTe
Authors:
D. Sprinzl,
P. Horodyska,
E. Belas,
R. Grill,
P. Maly,
P. Nemec
Abstract:
We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type do**. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electron…
▽ More
We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type do**. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. Our data can help in cross-checking the predictions of various theoretical models that were suggested in literature as an explanation of the observed non-monotonous do** dependence of the electron spin coherence time in GaAs.
△ Less
Submitted 16 September, 2010; v1 submitted 6 January, 2010;
originally announced January 2010.
-
Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations
Authors:
L. Smrcka,
N. A. Goncharuk,
M. Orlita,
R. Grill
Abstract:
We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Blo…
▽ More
We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Bloch oscillations, if the electric field is oriented perpendicularly to both the sample plane and the magnetic field. The electric field applied in-plane (but perpendicularly to the magnetic field) yields the step-like electron energy spectrum, corresponding to the magnetic-field-tunable oscillations alternative to the Bloch ones.
△ Less
Submitted 25 July, 2007;
originally announced July 2007.
-
Tunable terahertz oscillations in superlattices subject to an in-plane magnetic field
Authors:
M. Orlita,
R. Grill,
L. Smrcka,
M. Zvara
Abstract:
We present a concept of terahertz oscillations in superlattices that are generated under conditions apparently different from standard Bloch oscillations. These oscillations are induced when crossed magnetic and electric fields are applied to the superlattice, both in the in-plane direction. The frequency of these oscillations is tunable by the applied fields.
We present a concept of terahertz oscillations in superlattices that are generated under conditions apparently different from standard Bloch oscillations. These oscillations are induced when crossed magnetic and electric fields are applied to the superlattice, both in the in-plane direction. The frequency of these oscillations is tunable by the applied fields.
△ Less
Submitted 14 August, 2006; v1 submitted 19 January, 2006;
originally announced January 2006.
-
Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field
Authors:
J. Soubusta,
R. Grill,
P. Hlidek,
M. Zvara,
L. Smrcka,
S. Malzer,
W. Geisselbrecht,
G. H. Dohler
Abstract:
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band…
▽ More
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band regime. The experimental data are presented for an MBE-grown DQW consisting of two 5 nm wide GaAs wells, separated by a 4 monolayers (MLs) wide pure AlAs central barrier, and sandwiched between Ga_{0.7}Al_{0.3}As layers. The bias voltage is applied along the growth direction. Spatially direct and indirect excitonic transitions are identified, and the radius of the exciton and squeezing of the exciton in the growth direction are evaluated variationally. The excitonic binding energies, recombination energies, oscillator strengths, and relative intensities of the transitions as functions of the applied field are calculated. Our analysis demonstrates that this simple model is applicable in case of narrow DQWs not just for a qualitative description of the PL peak positions but also for the estimation of their individual shapes and intensities.
△ Less
Submitted 14 June, 1999;
originally announced June 1999.
