Showing 1–10 of 10 results for author: Grill, A

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

Authors: Arnout Beckers, Jakob Michl, Alexander Grill, Ben Kaczer, Marie Garcia Bardon, Bertrand Parvais, Bogdan Govoreanu, Kristiaan De Greve, Gaspard Hiblot, Geert Hellings

Abstract: Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power… ▽ More Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K. △ Less

Submitted 24 September, 2023; v1 submitted 22 December, 2022; originally announced December 2022.

Comments: Accepted for publication in IEEE Transactions on Nanotechnology

Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trap** Related Reliability Phenomena in MOS Devices

Authors: Dominic Waldhoer, Christian Schleich, Jakob Michl, Alexander Grill, Dieter Claes, Alexander Karl, Theresia Knobloch, Gerhard Rzepa, Jacopo Franco, Ben Kaczer, Michael Waltl, Tibor Grasser

Abstract: Charge trap** plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on… ▽ More Charge trap** plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-k capacitors and BTI/RTN modeling at cryogenic temperatures. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer

Authors: Rohith Acharya, Steven Brebels, Alexander Grill, Jeroen Verjauw, Tsvetan Ivanov, Daniel Perez Lozano, Danny Wan, Jacques van Damme, A. M. Vadiraj, Massimo Mongillo, Bogdan Govoreanu, Jan Craninckx, I. P. Radu, Kristiaan de Greve, Georges Gielen, Francky Catthoor, Anton Potočnik

Abstract: Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-… ▽ More Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols. △ Less

Submitted 26 September, 2022; originally announced September 2022.

Comments: 16+6 pages, 4+1+5 figures, 1 table

Lightweight Hardware Transform Design for the Versatile Video Coding 4K ASIC Decoders

Authors: Ibrahim Farhat, Wassim Hamidouche, Adrien Grill, Daniel Ménard, Olivier Déforges

Abstract: Versatile Video Coding (VVC) is the next generation video coding standard finalized in July 2020. VVC introduces new coding tools enhancing the coding efficiency compared to its predecessor High Efficiency Video Coding (HEVC). These new tools have a significant impact on the VVC software decoder complexity estimated to 2 times HEVC decoder complexity. In particular, the transform module includes i… ▽ More Versatile Video Coding (VVC) is the next generation video coding standard finalized in July 2020. VVC introduces new coding tools enhancing the coding efficiency compared to its predecessor High Efficiency Video Coding (HEVC). These new tools have a significant impact on the VVC software decoder complexity estimated to 2 times HEVC decoder complexity. In particular, the transform module includes in VVC separable and non-separable transforms named Multiple Transform Selection (MTS) and Low Frequency Non-Separable Transform (LFNST) tools, respectively. In this paper, we present an area-efficient hardware architecture of the inverse transform module for a VVC decoder. The proposed design uses a total of 64 regular multipliers in a pipelined architecture targeting Application-Specific Integrated Circuit (ASIC) platforms. It consists in a multi-standard architecture that supports the transform modules of recent MPEG standards including Advanced Video Coding (AVC), HEVC and VVC. The architecture leverages all primary and secondary transforms optimisations including butterfly de-composition, coefficients zeroing and the inherent linear relationship between the transforms. The synthesized results show that the proposed method sustains a constant throughput of 1sample per cycle and a constant latency for all block sizes. The proposed hardware inverse transform module operates at 600MHz frequency enabling to decode in real-time 4K video at 30 frames per second in 4:2:2 chroma sub-sampling format. The proposed module has been integrated in an ASIC UHD decoder targeting energy-aware decoding of VVC videos on consumer devices. △ Less

Submitted 6 November, 2021; v1 submitted 24 July, 2021; originally announced July 2021.

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Authors: Anton Potočnik, Steven Brebels, Jeroen Verjauw, Rohith Acharya, Alexander Grill, Danny Wan, Massimo Mongillo, Ruoyu Li, Tsvetan Ivanov, Steven Van Winckel, Fahd A. Mohiyaddin, Bogdan Govoreanu, Jan Craninckx, I. P. Radu

Abstract: Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of l… ▽ More Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers. △ Less

Submitted 14 September, 2021; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: 22+11 pages, 3+5 figures, 1+1 tables

Journal ref: Quantum Sci. Technol. 7 015004 (2022)

Lightweight hardware implementation of VVC transform block for ASIC decoder

Authors: I. Farhat, W. Hamidouche, A Grill, D. Ménard, O. Deforges

Abstract: Versatile Video Coding (VVC) is the next generation video coding standard expected by the end of 2020. Compared to its predecessor, VVC introduces new coding tools to make compression more efficient at the expense of higher computational complexity. This rises a need to design an efficient and optimised implementation especially for embedded platforms with limited memory and logic resources. One o… ▽ More Versatile Video Coding (VVC) is the next generation video coding standard expected by the end of 2020. Compared to its predecessor, VVC introduces new coding tools to make compression more efficient at the expense of higher computational complexity. This rises a need to design an efficient and optimised implementation especially for embedded platforms with limited memory and logic resources. One of the newly introduced tools in VVC is the Multiple Transform Selection (MTS). This latter involves three Discrete Cosine Transform (DCT)/Discrete Sine Transform (DST) types with larger and rectangular transform blocks. In this paper, an efficient hardware implementation of all DCT/DST transform types and sizes is proposed. The proposed design uses 32 multipliers in a pipelined architecture which targets an ASIC platform. It consists in a multi-standard architecture that supports the transform block of recent MPEG standards including AVC, HEVC and VVC. The architecture is optimized and removes unnecessary complexities found in other proposed architec-tures by using regular multipliers instead of multiple constant multi-pliers. The synthesized results show that the proposed method which sustain a constant throughput of two pixels/cycle and constant la-tency for all block sizes can reach an operational frequency of 600 Mhz enabling to decode in real-time 4K videos at 48 fps. △ Less

Submitted 18 February, 2020; originally announced February 2020.

Journal ref: International Conference on Acoustics, Speech, and Signal Processing, May 2020, Barcelone, Spain

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

Authors: Timothy J. McArdle, Jack O. Chu, Yu Zhu, Zihong Liu, Mahadevaiyer Krishnan, Christopher M. Breslin, Christos Dimitrakopoulos, Robert Wisnieff, Alfred Grill

Abstract: We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reductio… ▽ More We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the non-polished samples. △ Less

Submitted 31 March, 2011; originally announced March 2011.

Comments: 12 pages, 3 figures, accepted in Applied Physics Letters

Journal ref: Applied Physics Letters 98, 132108 (2011)

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer, Shu-Jen Han, Yanqing Wu, Wenjuan Zhu, D. Kurt Gaskill, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., Alfred Grill, Phaedon Avouris

Abstract: Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport… ▽ More Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 13 pages, 3 figures, accepted in Appl. Phys. Lett

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Authors: Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Keith A. Jenkins, Yu Zhu, Zihong Liu, Timothy J. McArdle, John A. Ott, Robert Wisnieff, Phaedon Avouris

Abstract: Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, fo… ▽ More Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene. △ Less

Submitted 4 June, 2010; originally announced June 2010.

Comments: 30 pages (double line spacing). Submitted

Report number: IBM Research Report - RC24986

Journal ref: J. Vac. Sci. Technol. B 28, 985 (2010)

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins, Damon B. Farmer, Hsin-Ying Chiu, Alfred Grill, Phaedon Avouris

Abstract: High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate l… ▽ More High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics. △ Less

Submitted 19 February, 2010; originally announced February 2010.