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Multi-Institutional Audit of FLASH and Conventional Dosimetry with a 3D-Printed Anatomically Realistic Mouse Phantom
Authors:
M Ramish Ashraf,
Stavros Melemenidis,
Kevin Liu,
Veljko Grilj,
Jeannette Jansen,
Brett Velasquez,
Luke Connell,
Joseph B Schulz,
Claude Bailat,
Aaron Libed,
Rakesh Manjappa,
Suparna Dutt,
Luis Soto,
Brianna Lau,
Aaron Garza,
William Larsen,
Lawrie Skinner,
Amy S Yu,
Murat Surucu,
Edward E Graves,
Peter G Maxim,
Stephen F. Kry,
Marie-Catherine Vozenin,
Emil Schüler,
Billy W Loo Jr
Abstract:
We conducted a multi-institutional audit of dosimetric variability between FLASH and conventional dose rate (CONV) electron irradiations by using an anatomically realistic 3D-printed mouse phantom. A CT scan of a live mouse was used to create a 3D model of bony anatomy, lungs, and soft tissue. A dual-nozzle 3D printer was used to print the mouse phantom using acrylonitrile butadiene styrene (…
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We conducted a multi-institutional audit of dosimetric variability between FLASH and conventional dose rate (CONV) electron irradiations by using an anatomically realistic 3D-printed mouse phantom. A CT scan of a live mouse was used to create a 3D model of bony anatomy, lungs, and soft tissue. A dual-nozzle 3D printer was used to print the mouse phantom using acrylonitrile butadiene styrene ($~1.02 g/cm^3$) and polylactic acid ($~1.24 g/cm^3$) simultaneously to simulate soft tissue and bone densities, respectively. The lungs were printed separately using lightweight polylactic acid ($~0.64 g/cm^3$). Hounsfield units (HU) and densities were compared with the reference CT scan of the live mouse. Print-to-print reproducibility of the phantom was assessed. Three institutions were each provided a phantom, and each institution performed two replicates of irradiations at selected mouse anatomic regions. The average dose difference between FLASH and CONV dose distributions and deviation from the prescribed dose were measured with radiochromic film. Compared to the reference CT scan, CT scans of the phantom demonstrated mass density differences of $0.10 g/cm^3$ for bone, $0.12 g/cm^3$ for lung, and $0.03 g/cm^3$ for soft tissue regions. Between phantoms, the difference in HU for soft tissue and bone was <10 HU from print to print. Lung exhibited the most variation (54 HU) but minimally affected dose distribution (<0.5% dose differences between phantoms). The mean difference between FLASH and CONV from the first replicate to the second decreased from 4.3% to 1.2%, and the mean difference from the prescribed dose decreased from 3.6% to 2.5% for CONV and 6.4% to 2.7% for FLASH. The framework presented here is promising for credentialing of multi-institutional studies of FLASH preclinical research to maximize the reproducibility of biological findings.
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Submitted 28 September, 2023;
originally announced September 2023.
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In-air ion beam analysis with high spatial resolution proton microbeam
Authors:
Milko Jakšić,
Davit Chokheli,
Stjepko Fazinić,
Veljko Grilj,
Natko Skukan,
Ivan Sudić,
Tonči Tadić,
Tome Antičić
Abstract:
One of the possible ways to maintain the micrometer spatial resolution while performing ion beam analysis in the air is to increase the energy of ions. In order to explore capabilities and limitations of this approach, we have tested a range of proton beam energies (2 - 6 MeV) using in-air STIM (Scanning Ion Transmission Microscopy) setup. Measurements of the spatial resolution dependence on proto…
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One of the possible ways to maintain the micrometer spatial resolution while performing ion beam analysis in the air is to increase the energy of ions. In order to explore capabilities and limitations of this approach, we have tested a range of proton beam energies (2 - 6 MeV) using in-air STIM (Scanning Ion Transmission Microscopy) setup. Measurements of the spatial resolution dependence on proton energy have been compared with SRIM simulation and modelling of proton multiple scattering by different approaches. Results were used to select experimental conditions in which 1 micrometer spatial resolution could be obtained. High resolution in-air microbeam could be applied for IBIC (Ion Beam Induced Charge) tests of large detectors used in nuclear and high energy physics that otherwise can not be tested in relatively small microbeam vacuum chambers.
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Submitted 10 March, 2019;
originally announced March 2019.
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Map** the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept
Authors:
J. Forneris,
S. Ditalia Tchernij,
P. Traina,
E. Moreva,
N. Skukan,
M. Jakšić,
V. Grilj,
L. Croin,
G. Amato,
I. P. Degiovanni,
B. Naydenov,
F. Jelezko,
M. Genovese,
P. Olivero
Abstract:
Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to t…
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Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local map** of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial map** of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization.
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Submitted 24 June, 2017;
originally announced June 2017.
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IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
A. Lo Giudice,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by…
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Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.
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Submitted 25 August, 2016;
originally announced August 2016.
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Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Tengattini,
E. Enrico,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
M. Jakšić,
P. Olivero
Abstract:
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-ele…
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The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trap** at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.
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Submitted 19 July, 2016;
originally announced July 2016.
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Creation and characterization of He-related color centers in diamond
Authors:
Jacopo Forneris,
Andrea Tengattini,
Sviatoslav Ditalia Tchernij,
Federico Picollo,
Alfio Battiato,
Paolo Traina,
Ivo Degiovanni,
Ekaterina Moreva,
Giorgio Brida,
Veljko Grilj,
Natko Skukan,
Milko Jakšić,
Marco Genovese,
Paolo Olivero
Abstract:
Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photolumines…
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Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500°C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond.
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Submitted 4 June, 2016;
originally announced June 2016.
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Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Battiato,
F. Picollo,
A. Tengattini,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
I. P. Degiovanni,
E. Enrico,
P. Traina,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact…
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We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
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Submitted 8 July, 2015;
originally announced July 2015.
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Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes
Authors:
J. Forneris,
D. Gatto Monticone,
P. Traina,
V. Grilj,
G. Brida,
G. Amato,
L. Boarino,
E. Enrico,
I. P. Degiovanni,
E. Moreva,
N. Skukan,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond…
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Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.
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Submitted 12 September, 2014; v1 submitted 1 August, 2014;
originally announced August 2014.
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Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of…
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In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.
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Submitted 17 December, 2013;
originally announced December 2013.
