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Experimentally verified, fast analytic and numerical design of superconducting resonators in flip-chip architectures
Authors:
Hang-Xi Li,
Daryoush Shiri,
Sandoko Kosen,
Marcus Rommel,
Lert Chayanun,
Andreas Nylander,
Robert Rehammar,
Giovanna Tancredi,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Jonas Bylander
Abstract:
In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal map** techniques, to p…
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In superconducting quantum processors, the predictability of device parameters is of increasing importance as many labs scale up their systems to larger sizes in a 3D-integrated architecture. In particular, the properties of superconducting resonators must be controlled well to ensure high-fidelity multiplexed readout of qubits. Here we present a method, based on conformal map** techniques, to predict a resonator's parameters directly from its 2D cross-section, without computationally heavy and time-consuming 3D simulation. We demonstrate the method's validity by comparing the calculated resonator frequency and coupling quality factor with those obtained through 3D finite-element-method simulation and by measurement of 15 resonators in a flip-chip-integrated architecture. We achieve a discrepancy of less than 2% between designed and measured frequencies, for 6-GHz resonators. We also propose a design method that reduces the sensitivity of the resonant frequency to variations in the inter-chip spacing.
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Submitted 30 August, 2023; v1 submitted 9 May, 2023;
originally announced May 2023.
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Thermal transport in nanoelectronic devices cooled by on-chip magnetic refrigeration
Authors:
S. Autti,
F. C. Bettsworth,
K. Grigoras,
D. Gunnarsson,
R. P. Haley,
A. T. Jones,
Yu. A. Pashkin,
J. R. Prance,
M. Prunnila,
M. D. Thompson,
D. E. Zmeev
Abstract:
On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamics are yet to be analyzed. We study a Coulomb blockade thermometer with on-chip copper refrigerant both experimentally and numerically, showing that dy…
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On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamics are yet to be analyzed. We study a Coulomb blockade thermometer with on-chip copper refrigerant both experimentally and numerically, showing that dynamics in this device are captured by a first-principles model. Our work shows how to simulate thermal dynamics in devices down to microkelvin temperatures, and outlines a recipe for a low-investment platform for quantum technologies and fundamental nanoscience in this novel temperature range.
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Submitted 31 May, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Transmon qubit readout fidelity at the threshold for quantum error correction without a quantum-limited amplifier
Authors:
Liangyu Chen,
Hang-Xi Li,
Yong Lu,
Christopher W. Warren,
Christian J. Križan,
Sandoko Kosen,
Marcus Rommel,
Shahnawaz Ahmed,
Amr Osman,
Janka Biznárová,
Anita Fadavi Roudsari,
Benjamin Lienhard,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Anton Frisk Kockum,
Per Delsing,
Jonas Bylander,
Giovanna Tancredi
Abstract:
High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to di…
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High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout - without using a quantum-limited amplifier.
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Submitted 11 August, 2022;
originally announced August 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer
Authors:
Mohammad Samani,
Christian P. Scheller,
Nikolai Yurttagül,
Kestutis Grigoras,
David Gunnarsson,
Omid Sharifi Sedeh,
Alexander T. Jones,
Jonathan R. Prance,
Richard P. Haley,
Mika Prunnila,
Dominik M. Zumbühl
Abstract:
Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states of matter, and also the discovery of unexpected phenomena. Adiabatic demagnetization is the workhorse of microkelvin cooling, requiring a dilution refrigerator…
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Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states of matter, and also the discovery of unexpected phenomena. Adiabatic demagnetization is the workhorse of microkelvin cooling, requiring a dilution refrigerator precooling stage. Pulse-tube dilution refrigerators have grown enormously in popularity due to their vast experimental space and independence of helium, but their unavoidable vibrations are making microkelvin cooling very difficult. On-chip thermometry in this unexplored territory is also not a trivial task due to extreme sensitivity to noise. Here, we present a pulse-tube compatible microkelvin sample holder with on-board cooling and microwave filtering and introduce a new type of temperature sensor, the gate Coulomb blockade thermometer (gCBT), working deep into the microkelvin regime. Using on- and off-chip cooling, we demonstrate electronic temperatures as low as 224$\pm$7$μ$K, remaining below 300$μ$K for 27 hours, thus providing sufficient time for measurements. Finally, we give an outlook for cooling below 50$μ$K for a new generation of microkelvin transport experiments.
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Submitted 12 October, 2021;
originally announced October 2021.
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Nano-thermoelectric infrared bolometers
Authors:
Aapo Varpula,
Kirsi Tappura,
Jonna Tiira,
Kestutis Grigoras,
Olli-Pekka Kilpi,
Kuura Sovanto,
Jouni Ahopelto,
Mika Prunnila
Abstract:
Infrared (IR) radiation detectors are used in numerous applications from thermal imaging to spectroscopic gas sensing. Obtaining high speed and sensitivity, low-power operation and cost-effectiveness with a single technology remains to be a challenge in the field of IR sensors. By combining nano-thermoelectric transduction and nanomembrane photonic absorbers, we demonstrate uncooled IR bolometer t…
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Infrared (IR) radiation detectors are used in numerous applications from thermal imaging to spectroscopic gas sensing. Obtaining high speed and sensitivity, low-power operation and cost-effectiveness with a single technology remains to be a challenge in the field of IR sensors. By combining nano-thermoelectric transduction and nanomembrane photonic absorbers, we demonstrate uncooled IR bolometer technology that is material-compatible with large-scale CMOS fabrication and provides fast and high sensitivity response to long-wavelength IR (LWIR) around 10 $μ$m. The fast operation speed stems from the low heat capacity metal layer grid absorber connecting the sub-100 nm-thick n- and p-type Si nano-thermoelectric support beams, which convert the radiation induced temperature rise into voltage. The nano-thermoelectric transducer-support approach benefits from enhanced phonon surface scattering in the beams leading to reduction in thermal conductivity, which enhances the sensitivity. We demonstrate different size nano-thermoelectric bolometric photodetector pixels with LWIR responsitivities, specific detectivities and time constants in the ranges 179-2930 V/W, 0.15-3.1$\cdot10^{8}$ cmHz$^{1/2}$/W and 66-3600 $μ$s, respectively. We benchmark the technology against different LWIR detector solutions and show how nano-thermoelectric detector technology can reach the fundamental sensitivity limits posed by phonon and photon thermal fluctuation noise.
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Submitted 28 March, 2021; v1 submitted 30 December, 2019;
originally announced December 2019.
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Properties of Nanocrystalline Silicon Probed by Optomechanics
Authors:
Daniel Navarro-Urrios,
Martin F. Colombano,
Jeremie Maire,
Emigdio Chavez-Angel,
Guillermo Arregui,
Nestor E. Capuj,
Arnaud Devos,
Amadeu Griol,
Laurent Bellieres,
Alejandro Martinez,
Kestutis Grigoras,
Teija Hakkinen,
Jaakko Saarilahti,
Tapani Makkonen,
Clivia M. Sotomayor-Torres,
Jouni Ahopelto
Abstract:
Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimise their functionality for devices and applications. Here we report on the optical, mechanical and thermal properties of nanocrystalline silicon probed by means of optomechanical nanobeams to extract information of the dynamics…
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Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimise their functionality for devices and applications. Here we report on the optical, mechanical and thermal properties of nanocrystalline silicon probed by means of optomechanical nanobeams to extract information of the dynamics of optical absorption, mechanical losses, heat generation and dissipation. The optomechanical nanobeams are fabricated using nanocrystalline films prepared by annealing amorphous silicon layers at different temperatures. The resulting crystallite sizes and the stress in the films can be controlled by the annealing temperature and time and, consequently, the properties of the films can be tuned relatively freely, as demonstrated here by means of electron microscopy and Raman scattering. We show that the nanocrystallite size and the volume fraction of the grain boundaries play a key role in the dissipation rates through non-linear optical and thermal processes. Promising optical (13000) and mechanical (1700) quality factors were found in the optomechanical cavity realised in the nanocrystalline Si resulting from annealing at 950 C. The enhanced absorption and recombination rates via the intra-gap states and the reduced thermal conductivity boost the potential to exploit these non-linear effects in applications, including NEMS, phonon lasing and chaos-based devices.
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Submitted 2 September, 2020; v1 submitted 9 July, 2019;
originally announced July 2019.
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Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samples
Authors:
Corinna Grosse,
Mohamad Abo Ras,
Aapo Varpula,
Kestutis Grigoras,
Daniel May,
Bernhard Wunderle,
Pierre-Olivier Chapuis,
Séverine Gomès,
Mika Prunnila
Abstract:
A novel microfabricated, all-electrical measurement platform is presented for a direct, accurate and rapid determination of the thermal conductivity and diffusivity of liquid and solid materials. The measurement approach is based on the bidirectional 3-omega method. The platform is composed of glass substrates on which sensor structures and a very thin dielectric nanolaminate passivation layer are…
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A novel microfabricated, all-electrical measurement platform is presented for a direct, accurate and rapid determination of the thermal conductivity and diffusivity of liquid and solid materials. The measurement approach is based on the bidirectional 3-omega method. The platform is composed of glass substrates on which sensor structures and a very thin dielectric nanolaminate passivation layer are fabricated. Using through-glass vias for contacting the sensors from the chip back side leaves the top side of the platform free for deposition, manipulation and optical inspection of the sample during 3-omega measurements. The thin passivation layer, which is deposited by atomic layer deposition on the platform surface, provides superior chemical resistance and allows for the measurement of electrically conductive samples, while maintaining the conditions for a simple thermal analysis. We demonstrate the measurement of thermal conductivities of borosilicate glass, pure water, glycerol, 2-propanol, PDMS, cured epoxy, and heat-sink compounds. The results compare well with both literature values and values obtained with the steady-state divided bar method. Small sample volumes (~0.02 mm$^2$) suffice for accurate measurements using the platform, allowing rapid temperature-dependent measurements of thermal properties, which can be useful for the development, optimization and quality testing of many materials, such as liquids, gels, pastes and solids.
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Submitted 13 April, 2018;
originally announced April 2018.
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Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes
Authors:
Andrey V. Timofeev,
Aapo Varpula,
Andrey Shchepetov,
Kestutis Grigoras,
Juha Hassel,
Jouni Ahopelto,
Markku Ylilammi,
Mika Prunnila
Abstract:
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characteriza…
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We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characterization of the devices reveal noise equivalent power of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The bolometers operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.
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Submitted 8 April, 2017;
originally announced April 2017.
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Conformal Titanium Nitride in a Porous Silicon Matrix: a Nanomaterial for In-Chip Supercapacitors
Authors:
Kestutis Grigoras,
Jari Keskinen,
Leif Grönberg,
Elina Yli-Rantala,
Sampo Laakso,
Hannu Välimäki,
Pertti Kauranen,
Jouni Ahopelto,
Mika Prunnila
Abstract:
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would benefit substantially from solutions in which the energy storage is integrated with the active device. Nanostructures based on porous silicon (PS) provide a route…
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Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would benefit substantially from solutions in which the energy storage is integrated with the active device. Nanostructures based on porous silicon (PS) provide a route towards integration due to the very high inherent surface area to volume ratio and compatibility with microelectronics fabrication processes. Unfortunately, pristine PS has limited wettability and poor chemical stability in electrolytes and the high resistance of the PS matrix severely limits the power efficiency. In this work, we demonstrate that excellent wettability and electro-chemical properties in aqueous and organic electrolytes can be obtained by coating the PS matrix with an ultra-thin layer of titanium nitride by atomic layer deposition. Our approach leads to very high specific capacitance (15 F/cm$^3$), energy density (1.3 mWh/cm$^3$), power density (up to 214 W/cm$^3$) and excellent stability (more than 13,000 cycles). Furthermore, we show that the PS-TiN nanomaterial can be integrated inside a silicon chip monolithically by combining MEMS and nanofabrication techniques. This leads to realisation of in-chip supercapacitor, i.e., it opens a new way to exploit the otherwise inactive volume of a silicon chip to store energy.
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Submitted 2 March, 2016;
originally announced March 2016.
