Showing 1–50 of 52 results for author: Griffiths, J P

Photon emission by hot electron injection across a lateral \textit{pn} junction

Authors: S. Norimoto, R. Saxena, P. See, A. Nasir, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka

Abstract: We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is crea… ▽ More We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures

Fast characterization of multiplexed single-electron pumps with machine learning

Authors: N. Schoinas, Y. Rath, S. Norimoto, W. Xie, P. See, J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka, A. Rossi, I. Rungger

Abstract: We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease… ▽ More We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Comments: 6 pages, 3 figures

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing

Authors: Pengcheng Ma, Kaveh Delfanazari, Reuben K. Puddy, Jiahui Li, Moda Cao, Teng Yi, Jonathan P. Griffiths, Harvey E. Beere, David A. Ritchie, Michael J. Kelly, Charles G. Smith

Abstract: The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and… ▽ More The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Time-resolved Coulomb collision of single electrons

Authors: J. D. Fletcher, W. Park, S. Ryu, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, H. -S. Sim, M. Kataoka

Abstract: Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function… ▽ More Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality

Authors: P. M. T. Vianez, Y. **, W. K. Tan, Q. Liu, J. P. Griffiths, I. Farrer, D. A. Ritchie, O. Tsyplyatyev, C. J. B. Ford

Abstract: Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore… ▽ More Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from $m_0$. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain $m_0=(0.0525\pm0.0015)m_\textrm{e}$ in this material, where $m_\textrm{e}$ is the free-electron mass. By varying the density in the wires, we change the interaction parameter $r_\textrm{s}$ in the range from $\sim$1-4 and show that $m_0$ remains constant. The determined value of $m_0$ is $\sim 22$% lighter than observed in GaAs in geometries of higher dimensionality $D$ ($D>1$), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions. △ Less

Submitted 14 March, 2023; v1 submitted 27 October, 2021; originally announced October 2021.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 107, 115128 (2023)

Microscopic metallic air-bridge arrays for connecting quantum devices

Authors: Y. **, M. Moreno, P. M. T. Vianez, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford

Abstract: We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining q… ▽ More We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development. △ Less

Submitted 21 April, 2021; v1 submitted 11 February, 2021; originally announced February 2021.

Comments: 6 pages, 5 figures; This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing

Journal ref: Appl. Phys. Lett. 118, 162108 (2021)

Observing separate spin and charge Fermi seas in a strongly correlated one-dimensional conductor

Authors: P. M. T. Vianez, Y. **, M. Moreno, A. S. Anirban, A. Anthore, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, A. J. Schofield, O. Tsyplyatyev, C. J. B. Ford

Abstract: An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes… ▽ More An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes in 1D gated-wires using tunnelling spectroscopy. We observe two parabolic dispersions, indicative of separate Fermi seas at high energies, associated with spin and charge excitations, together with the emergence of two additional 1D 'replica' modes that strengthen with decreasing wire length. The effective interaction strength is varied by changing the amount of 1D inter-subband screening by over 45%. Our findings demonstrate the existence of spin-charge separation in the whole energy band outside the low-energy limit of validity of the Tomonaga-Luttinger model, and also set a constraint on the validity of the newer nonlinear Tomonaga-Luttinger theory. △ Less

Submitted 1 July, 2022; v1 submitted 10 February, 2021; originally announced February 2021.

Comments: 51 pages, 14 figures

Journal ref: Science Advances 8, eabm2781 (2022)

Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions

Authors: Yousun Chung, Hangtian Hou, Seok-Kyun Son, Tzu-Kan Hsiao, Ateeq Nasir, Antonio Rubino, Jonathan P. Griffiths, Ian Farrer, David A. Ritchie, Christopher J. B. Ford

Abstract: Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have… ▽ More Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centres. We present experimental observations of SAW-driven single-electron quantised current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pum** of electrons by a SAW across the sub-micron depleted channel between regions of electrons and holes, and observe light emission at such a lateral p-n junction. Improving the lateral confinement in the junction should make it possible to produce a quantised electron-to-hole current and hence SAW-driven emission of single photons. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 100, 245401 (2019)

Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure

Authors: H. Hou, Y. Kozuka, Jun-Wei Liao, L. W. Smith, D. Kos, J. P. Griffiths, J. Falson, A. Tsukazaki, M. Kawasaki, C. J. B. Ford

Abstract: Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-facto… ▽ More Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon. △ Less

Submitted 8 March, 2019; originally announced March 2019.

Continuous-Variable Tomography of Solitary Electrons

Authors: J. D. Fletcher, N. Johnson, E. Locane, P. See, J. P. Griffiths, I. Farrer, D. A. Ritchie, P. W. Brouwer, V. Kashcheyevs, M. Kataoka

Abstract: A method for characterising the wave-function of freely-propagating particles would provide a useful tool for develo** quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t… ▽ More A method for characterising the wave-function of freely-propagating particles would provide a useful tool for develo** quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level. △ Less

Submitted 20 January, 2020; v1 submitted 30 January, 2019; originally announced January 2019.

Comments: Updated to published text

Journal ref: Nature Communications 10, 5298 (2019)

Experimental realization of a quantum dot energy harvester

Authors: G. Jaliel, R. K. Puddy, R. Sánchez, A. N. Jordan, B. Sothmann, I. Farrer, J. P. Griffiths, D. A. Ritchie, C. G. Smith

Abstract: We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons… ▽ More We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK. △ Less

Submitted 1 October, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 123, 117701 (2019)

Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode

Authors: Tzu-Kan Hsiao, Antonio Rubino, Yousun Chung, Seok-Kyun Son, Hangtian Hou, Jorge Pedrós, Ateeq Nasir, Gabriel Éthier-Majcher, Megan J. Stanley, Richard T. Phillips, Thomas A. Mitchell, Jonathan P. Griffiths, Ian Farrer, David A. Ritchie, Christopher J. B. Ford

Abstract: Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr… ▽ More Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network. △ Less

Submitted 10 January, 2019; originally announced January 2019.

Journal ref: Nature Communications 11, 917 (2020)

Momentum-dependent power law measured in an interacting quantum wire beyond the Luttinger limit

Authors: Y. **, O. Tsyplyatyev, M. Moreno, A. Anthore, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, L. I. Glazman, A. J. Schofield, C. J. B. Ford

Abstract: Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the… ▽ More Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the length scale. We present the first experimental example of this new type of power law in the spectral function of interacting electrons in a quantum wire using a transport-spectroscopy technique. The observed momentum dependence of the power law in the high-energy region matches the theoretical predictions, supporting not only the 1D theory of interacting particles beyond the linear regime but also the existence of a new type of universality that emerges at finite energy and momentum. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2821 (2019)

Rectification in mesoscopic AC-gated semiconductor devices

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum… ▽ More We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 7 pages, 5 figures

Journal ref: Journal of Applied Physics vol. 114, 164505 (2013)

Error detection in a tunable-barrier electron pump

Authors: S. P. Giblin, P. See, J. D. Fletcher, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, M. Kataoka

Abstract: We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation… ▽ More We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures. This is an unpublished study preceding the work published as "High-resolution error detection in the capture process of a single-electron pump", Applied Physics Letters vol. 108, 023502 (2016)

High-resolution error detection in the capture process of a single-electron pump

Authors: S. P. Giblin, P. See, A. Petrie, T. J. B. M. Janssen, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie, M. Kataoka

Abstract: The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre… ▽ More The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures

Journal ref: Applied Physics Letters vol. 108, 023502 (2016)

Magnetoresistance in an electronic cavity coupled to one-dimensional systems

Authors: Chengyu Yan, Sanjeev Kumar, Patrick See, Ian Farrer, David Ritchie, J. P. Griffiths, G. A. C. Jones, Michael Pepper

Abstract: In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity… ▽ More In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity was increased. The initial results show the promise of hybrid quantum system for future quantum technologies. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Journal ref: Appl. Phys. Lett. 113, 112101 (2018)

Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

Authors: H. Hou, Y. Chung, G. Rughoobur, T. K. Hsiao, A. Nasir, A. J. Flewitt, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford

Abstract: In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of su… ▽ More In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a 0.2V offset in pinch-off characteristics of one-dimensional channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software. △ Less

Submitted 24 June, 2018; originally announced June 2018.

Comments: 8 pages, 3 figures

Journal ref: J. Phys. D: Appl. Phys. 51 (2018) 244004 (6pp)

Independent indistinguishable quantum light sources on a reconfigurable photonic integrated circuit

Authors: D. J. P. Ellis, A. J. Bennett, C. Dangel, J. P. Lee, J. P. Griffiths, T. A. Mitchell, T. -K. Paraiso, P. Spencer, D. A. Ritchie, A. J. Shields

Abstract: We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, independent InGaAs/GaAs quantum-light-emitting-diodes (QLEDs) with a silicon oxynitride waveguide circuit. Each waveguide joining the circuit can then be excited by a separate, independently electrically contacted QLED. We show that the emission from neighbouring QLEDs can be independently tuned to d… ▽ More We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, independent InGaAs/GaAs quantum-light-emitting-diodes (QLEDs) with a silicon oxynitride waveguide circuit. Each waveguide joining the circuit can then be excited by a separate, independently electrically contacted QLED. We show that the emission from neighbouring QLEDs can be independently tuned to degeneracy using the Stark Effect and that the resulting photon streams are indistinguishable. This enables on-chip Hong-Ou-Mandel-type interference, as required for many photonic quantum information processing schemes. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: 15 pages, 5 figures

Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures

Authors: Shun-Tsung Lo, Chin-Hung Chen, Ju-Chun Fan, L. W. Smith, G. L. Creeth, Che-Wei Chang, M. Pepper, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, Tse-Ming Chen

Abstract: The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a t… ▽ More The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a time. Here we demonstrate that the spatial spin splitting of a coherent beam of electrons can be achieved and controlled using the interplay between an external magnetic field and Rashba spin-orbit interaction in semiconductor nanostructures. The technique of transverse magnetic focusing is used to detect this spin separation. More notably, our ability to engineer the spin-orbit interactions enables us to simultaneously manipulate and probe the coherent spin dynamics of both spin species and hence their correlation, which could open a route towards spintronics and spin-based quantum information processing. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: 15 pages, 4 figures

Journal ref: Nature Communications 8, 15997 (2017)

LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Authors: N. Johnson, C. Emary, S. Ryu, H. -S. Sim, P. See, J. D. Fletcher, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen, M. Kataoka

Abstract: Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw… ▽ More Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications. △ Less

Submitted 25 December, 2017; originally announced December 2017.

Comments: 5 pages and supplementary

Journal ref: Phys. Rev. Lett. 121, 137703 (2018)

Direct observation of exchange-driven spin interactions in one-dimensional system

Authors: Chengyu Yan, Sanjeev Kumar, Kalarikad Thomas, Michael Pepper, Patrick See, Ian Farrer, David Ritchie, J. P. Griffiths, G. A. C. Jones

Abstract: We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , pr… ▽ More We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , produces asymmetric two sub-peaks in the first focusing peak, each sub-peak representing the population of spin-state arising from the spatially separated spins in the injector. Further increasing the conductance flips the spin-states in the 1D channel thus reversing the asymmetry in the sub-peaks. On applying a source-drain bias, the spin-gap, so obtained, can be resolved thus providing evidence of exchange interaction induced spin polarisation in the 1D systems. △ Less

Submitted 14 July, 2017; originally announced July 2017.

Surface Acoustic wave modulation of a coherently driven quantum dot in a pillar microcavity

Authors: B. Villa, A. J. Bennett, D. J. P. Ellis, J. P. Lee, J. Skiba-Szymanska, T. A. Mitchell, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford, A. J. Shields

Abstract: We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of sing… ▽ More We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of single-photon emission. Multiple phonon sidebands are resolved in the emission spectrum, due to the absorption and emission of vibrational quanta in each scattering event. △ Less

Submitted 4 July, 2017; originally announced July 2017.

Comments: To be published in Applied Physics Letters

Journal ref: Applied Physics Letters, vol. 111, no. 1, p. 011103, Jul. 2017

Ultrafast Voltage Sampling using Single-Electron Wavepackets

Authors: N. Johnson, J. D. Fletcher, D. A. Humphreys, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M Janssen, M. Kataoka

Abstract: We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w… ▽ More We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond. △ Less

Submitted 14 October, 2016; v1 submitted 3 October, 2016; originally announced October 2016.

Comments: 9 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 102105 (2017)

Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States

Authors: M. Kataoka, N. Johnson, C. Emary, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen

Abstract: We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival ti… ▽ More We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 116, 126803 (2016)

Nonlinear spectra of spinons and holons in short GaAs quantum wires

Authors: M. Moreno, C. J. B. Ford, Y. **, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie, O. Tsyplyatyev, A. J. Schofield

Abstract: One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D metals are successfully described within the theory of linear Luttinger liquids, but the challenging task of describing their high-energy nonlinear properties… ▽ More One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D metals are successfully described within the theory of linear Luttinger liquids, but the challenging task of describing their high-energy nonlinear properties has long remained elusive. Recently, novel theoretical approaches accounting for nonlinearity have been developed, yet the rich phenomenology that they predict remains barely explored experimentally. Here, we probe the nonlinear spectral characteristics of short GaAs quantum wires by tunnelling spectroscopy, using an advanced device consisting of 6000 wires. We find evidence for the existence of an inverted (spinon) shadow band in the main region of the particle sector, one of the central predictions of the new nonlinear theories. A (holon) band with reduced effective mass is clearly visible in the particle sector at high energies. △ Less

Submitted 15 September, 2016; v1 submitted 9 November, 2015; originally announced November 2015.

Comments: 8 pages, 6 figures; definitive published version

Journal ref: Nature Communications 7, 12784 (2016)

Nature of the many-body excitations in a quantum wire: theory and experiment

Authors: O. Tsyplyatyev, A. J. Schofield, Y. **, M. Moreno, W. K. Tan, A. S. Anirban, C. J. B. Ford, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie

Abstract: The natural excitations of an interacting one-dimensional system at low energy are hydrodynamic modes of Luttinger liquid, protected by the Lorentz invariance of the linear dispersion. We show that beyond low energies, where quadratic dispersion reduces the symmetry to Galilean, the main character of the many-body excitations changes into a hierarchy: calculations of dynamic correlation functions… ▽ More The natural excitations of an interacting one-dimensional system at low energy are hydrodynamic modes of Luttinger liquid, protected by the Lorentz invariance of the linear dispersion. We show that beyond low energies, where quadratic dispersion reduces the symmetry to Galilean, the main character of the many-body excitations changes into a hierarchy: calculations of dynamic correlation functions for fermions (without spin) show that the spectral weights of the excitations are proportional to powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions and $L$ is the system length. Thus only small numbers of excitations carry the principal spectral power in representative regions on the energy-momentum planes. We have analysed the spectral function in detail and have shown that the first-level (strongest) excitations form a mode with parabolic dispersion, like that of a renormalised single particle. The second-level excitations produce a singular power-law line shape to the first-level mode and multiple power-laws at the spectral edge. We have illustrated crossover to Luttinger liquid at low energy by calculating the local density of state through all energy scales: from linear to non-linear, and to above the chemical potential energies. In order to test this model, we have carried out experiments to measure momentum-resolved tunnelling of electrons (fermions with spin) from/to a wire formed within a GaAs heterostructure. We observe well-resolved spin-charge separation at low energy with appreciable interaction strength and only a parabolic dispersion of the first-level mode at higher energies. We find structure resembling the second-level excitations, which dies away rapidly at high momentum in line with the theoretical predictions here. △ Less

Submitted 28 August, 2015; originally announced August 2015.

Comments: 23 pages, 10 figures, 2 tables

Journal ref: Phys. Rev. B 93, 075147 (2016)

The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure

Authors: L. W. Smith, H. Al-Taie, A. A. J. Lesage, K. J. Thomas, F. Sfigakis, P. See, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz… ▽ More We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics. △ Less

Submitted 6 November, 2015; v1 submitted 12 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. Applied 5, 044015 (2016)

Quantum photonics hybrid integration platform

Authors: Eoin Murray, David P. Ellis, Thomas Meany, Frederik F. Floether, James P. Lee, Jonathan P. Griffiths, Geb A. C. Jones, Ian Farrer, David A. Ritchie, Anthony J. Bennett, Andrew J. Shields

Abstract: Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguid… ▽ More Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single photon nature of the emission was verified by an on-chip Hanbury Brown and Twiss measurement. △ Less

Submitted 31 July, 2015; v1 submitted 1 July, 2015; originally announced July 2015.

Comments: 4 pages, 9 figures

Journal ref: Appl. Phys. Lett. 107, 171108 (2015)

All-electric all-semiconductor spin field effect transistors

Authors: Pojen Chuang, Sheng-Chin Ho, L. W. Smith, F. Sfigakis, M. Pepper, Chin-Hung Chen, Ju-Chun Fan, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, Tse-Ming Chen

Abstract: The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to re… ▽ More The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins -- spin injection, manipulation, and detection -- in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Journal ref: Nature Nanotechnology 10, 35-39 (2015)

Magnetic field induced charge redistribution in disordered graphene double quantum dots

Authors: K. L. Chiu, M. R. Connolly, A. Cresti, J. P. Griffiths, G. A. C. Jones, C. G. Smith

Abstract: We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high m… ▽ More We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B-fields, resulting in the charge delocalization and reduced charging energy observed experimentally. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 7 pages, 5 figures

Measurement and control of electron wave packets from a single-electron source

Authors: J. Waldie, P. See, V. Kashcheyevs, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie, T. J. B. M. Janssen, M. Kataoka

Abstract: We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine… ▽ More We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons. △ Less

Submitted 22 July, 2015; v1 submitted 24 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 125305 (2015)

Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires

Authors: L. W. Smith, H. Al-Taie, A. A. J. Lesage, F. Sfigakis, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, A. R. Hamilton, M. J. Kelly, C. G. Smith

Abstract: Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that… ▽ More Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B. △ Less

Submitted 1 June, 2015; v1 submitted 4 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 91, 23540 (2015)

Hierarchy of modes in an interacting system

Authors: O. Tsyplyatyev, A. J. Schofield, Y. **, M. Moreno, W. K. Tan, C. J. B. Ford, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie

Abstract: Studying interacting fermions in 1D at high energy, we find a hierarchy in the spectral weights of the excitations theoretically and we observe evidence for second-level excitations experimentally. Diagonalising a model of fermions (without spin), we show that levels of the hierarchy are separated by powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions a… ▽ More Studying interacting fermions in 1D at high energy, we find a hierarchy in the spectral weights of the excitations theoretically and we observe evidence for second-level excitations experimentally. Diagonalising a model of fermions (without spin), we show that levels of the hierarchy are separated by powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions and $L$ is the system length. The first-level (strongest) excitations form a mode with parabolic dispersion, like that of a renormalised single particle. The second-level excitations produce a singular power-law line shape to the first-level mode and multiple power-laws at the spectral edge. We measure momentum-resolved tunnelling of electrons (fermions with spin) from/to a wire formed within a GaAs heterostructure, which shows parabolic dispersion of the first-level mode and well-resolved spin-charge separation at low energy with appreciable interaction strength. We find structure resembling the second-level excitations, which dies away quite rapidly at high momentum. △ Less

Submitted 13 August, 2014; originally announced August 2014.

Comments: 5 pages, 3 figures, 1 table

Journal ref: Phys. Rev. Lett. 114, 196401 (2015)

Multiplexed Charge-locking Device for Large Arrays of Quantum Devices

Authors: R. K. Puddy, L. W Smith, H. Al-Taie, C. H. Chong, I. Farrer, J. P. Griffiths, D. A. Ritchie, M. J. Kelly, M. Pepper, C. G. Smith

Abstract: We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divi… ▽ More We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour. △ Less

Submitted 21 August, 2014; v1 submitted 12 August, 2014; originally announced August 2014.

Comments: 5 pages, 7 figures

Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions

Authors: E. D. Herbschleb, R. K. Puddy, P. Marconcini, J. P. Griffiths, G. A. C. Jones, M. Macucci, C. G. Smith, M. R. Connolly

Abstract: We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning… ▽ More We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field. △ Less

Submitted 8 August, 2014; originally announced August 2014.

Comments: 8 pages, 6 figures, includes supplementary information

Journal ref: Phys. Rev. B 92, 125414 (2015)

Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly

Authors: L. W. Smith, H. Al-Taie, F. Sfigakis, P. See, A. A. J. Lesage, B. Xu, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum… ▽ More The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 045426 (2014)

A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices

Authors: H. Al-Taie, L. W. Smith, B. Xu, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the m… ▽ More Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible. △ Less

Submitted 22 July, 2014; originally announced July 2014.

Comments: Proceedings of the 10th International Workshop on Low-Temperature Electronics, pp. 75 - 80 (2013). Available: http://wolte10.lpn.cnrs.fr/FILES/proceedings_6dec2013.pdf

In-plane emission of indistinguishable photons generated by an integrated quantum emitter

Authors: Sokratis Kalliakos, Yarden Brody, Andre Schwagmann, Anthony J. Bennett, Martin B. Ward, David J. P. Ellis, Joanna Skiba-Szymanska, Ian Farrer, Jonathan P. Griffiths, Geb A. C. Jones, David A. Ritchie, Andrew J. Shields

Abstract: We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon i… ▽ More We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits. △ Less

Submitted 16 June, 2014; originally announced June 2014.

Comments: 10 pages, 3 figures

Journal ref: Appl. Phys. Lett. 104, 221109 (2014)

Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays

Authors: C. L. Richardson, S. D. Edkins, G. R. Berdiyorov, C. J. Chua, J. P. Griffiths, G. A. C. Jones, M. R. Buitelaar, V. Narayan, F. Sfigakis, C. G. Smith, L. Covaci, M. R. Connolly

Abstract: We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the fo… ▽ More We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point. △ Less

Submitted 21 June, 2015; v1 submitted 3 April, 2014; originally announced April 2014.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. B, 91, 245418 (2015)

On-chip generation and guiding of quantum light from a site-controlled quantum dot

Authors: Ayesha Jamil, Joanna Skiba-Szymanska, Sokratis Kalliakos, Andre Schwagmann, Martin B. Ward, Yarden Brody, David J. P. Ellis, Ian Farrer, Jonathan P. Griffiths, Geb A. C. Jones, David A. Ritchie, Andrew J. Shields

Abstract: We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed o… ▽ More We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the exit of the waveguide is 12 \pm 5 % before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits. △ Less

Submitted 13 March, 2014; originally announced March 2014.

Comments: 8 pages, 4 figures

Journal ref: Appl. Phys. Lett. 104, 101108 (2014)

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

Authors: H. Al-Taie, L. W. Smith, B. Xu, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, M. J. Kelly, C. G. Smith

Abstract: We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plate… ▽ More We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Journal ref: Appl. Phys. Lett. 102, 243102 (2013)

Confocal microphotoluminescence map** of coupled and detuned states in photonic molecules

Authors: F. S. F. Brossard, B. P. L. Reid, C. C. S. Chan, X. L. Xu, J. P. Griffiths, D. A. Williams, R. Murray, R. A. Taylor

Abstract: We study the coupling of cavities defined by the local modulation of the waveguide width using confocal photoluminescence microscopy. We are able to spatially map the profile of the antisymmetric (antibonding) and symmetric (bonding) modes of a pair of strongly coupled cavities(photonic molecule) and follow the coupled cavity system from the strong coupling to the weak coupling regime in the prese… ▽ More We study the coupling of cavities defined by the local modulation of the waveguide width using confocal photoluminescence microscopy. We are able to spatially map the profile of the antisymmetric (antibonding) and symmetric (bonding) modes of a pair of strongly coupled cavities(photonic molecule) and follow the coupled cavity system from the strong coupling to the weak coupling regime in the presence of structural disorder. The effect of disorder on this photonic molecule is also investigated numerically with a finite-difference time-domain method and a semi-analytical approach, which enables us to quantify the light localization observed in either cavity as a function of detuning. △ Less

Submitted 10 February, 2014; v1 submitted 30 April, 2013; originally announced April 2013.

Comments: 24 pages, 7 figures

Journal ref: Opt. Express 21, 16934 (2013)

Clock-controlled emission of single-electron wavepackets in a solid-state circuit

Authors: J. D. Fletcher, M. Kataoka, H. Howe, M. Pepper, P. See, S. P. Giblin, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, T. J. B. M. Janssen

Abstract: We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon… ▽ More We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths. △ Less

Submitted 20 February, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. Lett. 111, 216807 (2013)

Gigahertz quantized charge pum** in graphene quantum dots

Authors: M. R. Connolly, K. L. Chiu, S. P. Giblin, M. Kataoka, J. D. Fletcher, C. Chua, J. P. Griffiths, G. A. C. Jones, V. I. Fal'ko, C. G. Smith, T. J. B. M. Janssen

Abstract: Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1… ▽ More Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Comments: 13 pages, 11 figures, includes supplementary information

Journal ref: Nature Nanotechnology (2013)

On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide

Authors: Andre Schwagmann, Sokratis Kalliakos, Ian Farrer, Jonathan P. Griffiths, Geb A. C. Jones, David A. Ritchie, Andrew J. Shields

Abstract: We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, singl… ▽ More We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, single photon emission rates of up to 19 MHz into the guided mode are demonstrated, which corresponds to a device efficiency of 24%. These results herald the monolithic integration of sources in photonic quantum circuits. △ Less

Submitted 17 January, 2012; originally announced January 2012.

Comments: 13 pages, 3 figures

Journal ref: Appl. Phys. Lett. 99, 261108 (2011)

Towards a quantum representation of the ampere using single electron pumps

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design… ▽ More Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge. △ Less

Submitted 10 July, 2012; v1 submitted 12 January, 2012; originally announced January 2012.

Comments: 8 pages, 7 figures

Journal ref: Nat. Commun. 3:930 (2012)

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Authors: W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie

Abstract: We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be… ▽ More We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). △ Less

Submitted 16 March, 2013; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 4 pages, 4 figures; added figures, references, equations, and text; results/conclusions otherwise unchanged

Journal ref: Applied Physics Letters 102, 103507 (2013)

Compressibility measurements of quasi-one-dimensional quantum wires

Authors: L. W. Smith, A. R. Hamilton, K. J. Thomas, M. Pepper, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie

Abstract: We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the upper wire to screen the electric field from a biased surface gate. The technique is sensitive enough to resolve spin-splitting of the subbands in the presence… ▽ More We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the upper wire to screen the electric field from a biased surface gate. The technique is sensitive enough to resolve spin-splitting of the subbands in the presence of an in-plane magnetic field. We measure a compressibility signal due to the 0.7 structure and study its evolution with increasing temperature and magnetic field. We see no evidence of the formation of the quasibound state predicted by the Kondo model, instead our data are consistent with theories which predict that the 0.7 structure arises as a result of spontaneous spin polarization. △ Less

Submitted 5 August, 2011; originally announced August 2011.

Stabilization of single-electron pumps by high magnetic fields

Authors: J. D. Fletcher, M. Kataoka, S. P. Giblin, Sunghun Park, H. -S. Sim, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, H. E. Beere, D. A. Ritchie

Abstract: We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati… ▽ More We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization. △ Less

Submitted 31 August, 2012; v1 submitted 22 July, 2011; originally announced July 2011.