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Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
Authors:
W. Wu,
P. T. Greenland,
A. J. Fisher,
Nguyen H Le,
S. Chick,
B. N. Murdin
Abstract:
Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitations of lines of defects within a single-valley spherical band approximation, thus map** the problem to a scaled hydrogen atom array. A series of detai…
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Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitations of lines of defects within a single-valley spherical band approximation, thus map** the problem to a scaled hydrogen atom array. A series of detailed full configuration-interaction and time-dependent hybrid density-functional theory calculations have been performed to understand linear clusters of up to 10 donors. Our studies illustrate the generic features of their excited states, addressing the competition between formation of inter-donor ionic states and intra-donor atomic excited states. At short inter-donor distances, excited states of donor molecules are dominant, at intermediate distances ionic states play an important role, and at long distances the intra-donor excitations are predominant as expected. The calculations presented here emphasise the importance of correlations between donor electrons, and are thus complementary to other recent approaches that include effective mass anisotropy and multi-valley effects. The exchange splittings between relevant excited states have also been estimated for a donor pair and for a three-donor arrays; the splittings are much larger than those in the ground state in the range of donor separations between 10 and 20 nm. This establishes a solid theoretical basis for the use of excited-state exchange interactions for controllable quantum gate operations in silicon.
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Submitted 5 October, 2017;
originally announced October 2017.
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Coherent Control of Rydberg States in Silicon
Authors:
P. T. Greenland,
S. A. Lynch,
A. F. G. van der Meer,
B. N. Murdin,
C. R. Pidgeon,
B. Redlich,
N. Q. Vinh,
G. Aeppli
Abstract:
We demonstrate coherent control of donor wavefunctions in phosphorous-doped silicon. Our experiments take advantage of a free electron laser to stimulate and observe photon echoes from, and Rabi oscillations between the ground and first excited state of P donors in Si.
We demonstrate coherent control of donor wavefunctions in phosphorous-doped silicon. Our experiments take advantage of a free electron laser to stimulate and observe photon echoes from, and Rabi oscillations between the ground and first excited state of P donors in Si.
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Submitted 23 August, 2010;
originally announced August 2010.
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Initializing, manipulating and storing quantum information with bismuth dopants in silicon
Authors:
Gavin W. Morley,
Marc Warner,
A. Marshall Stoneham,
P. Thornton Greenland,
Johan van Tol,
Christopher W. M. Kay,
Gabriel Aeppli
Abstract:
A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2) longer than any other electron spin in the solid state: 14 ms at 7 K. Heavier impurities such as bismuth in silicon (Si:Bi) could be used in conjunction with S…
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A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2) longer than any other electron spin in the solid state: 14 ms at 7 K. Heavier impurities such as bismuth in silicon (Si:Bi) could be used in conjunction with Si:P for quantum information proposals that require two separately addressable spin species. However, the question of whether the incorporation of the much less soluble Bi into Si leads to defect species that destroy coherence has not been addressed. Here we show that schemes involving Si:Bi are indeed feasible as the electron spin coherence time T2 exceeds 1 ms at 10 K. We polarized the Si:Bi electrons and hyperpolarized the I=9/2 nuclear spin of 209Bi, manipulating both with pulsed magnetic resonance. The larger nuclear spin means that a Si:Bi dopant provides a 20-dimensional Hilbert space rather than the four dimensional Hilbert space of an I=1/2 Si:P dopant.
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Submitted 20 April, 2010;
originally announced April 2010.
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Silicon as a model ion trap: time domain measurements of donor Rydberg states
Authors:
N Q Vinh,
P T Greenland,
K Litvinenko,
B Redlich,
A F G van der Meer,
S A Lynch,
M Warner,
A M Stoneham,
G Aeppli,
D J Paul,
C R Pidgeon,
B N Murdin
Abstract:
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, sh…
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One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.
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Submitted 30 November, 2008;
originally announced December 2008.
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Exchange in multi-defect semiconductor clusters: assessment of `control-qubit' architectures
Authors:
W. Wu,
P. T. Greenland,
A. J. Fisher
Abstract:
We present a variational method to calculate the exchange interactions among donor clusters in a semiconductor. Such clusters are candidates for a so-called control-qubit architecture for quantum information, where the effective exchange coupling between two atoms is controlled by the electronic state of a third. We use a combination of the effective-mass approximation and the quantum defect met…
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We present a variational method to calculate the exchange interactions among donor clusters in a semiconductor. Such clusters are candidates for a so-called control-qubit architecture for quantum information, where the effective exchange coupling between two atoms is controlled by the electronic state of a third. We use a combination of the effective-mass approximation and the quantum defect method; our variational ansatz is particularly suited to cases where an excited state of one of the donors (control) is partially delocalised over several different centres, forming an analogue of an extended molecular orbital. Our method allows calculations of the "on/off" ratios of exchange interactions in such cases. We compare exchange interactions when the control is in the "on" and "off" states, and find that both the magnitude and sign of the exchange interactions may be changed. To rationalize the sign-change, we carry out a simple Green's function perturbation-theory calculation. This simple model qualitatively explains the sign change and illustrates its origins both in ring-exchange processes and in the delocalization of the control electron. We also compute probability distributions for the coupling strengths over the ensemble of clusters, and show that excitation of the control causes narrowing of the distributions along with shifts to larger magnitudes and from anti-ferromagnetic to ferromagnetic coupling.
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Submitted 1 November, 2007;
originally announced November 2007.
