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Degenerate optical parametric amplification in CMOS silicon
Authors:
David Heydari,
Mircea Catuneanu,
Edwin Ng,
Dodd J. Gray Jr.,
Ryan Hamerly,
Jatadhari Mishra,
Marc Jankowski,
M. M. Fejer,
Kambiz Jamshidi,
Hideo Mabuchi
Abstract:
Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon ph…
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Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon photonics that break this material symmetry using large bias fields, thereby enabling $χ^{(2)}$ interactions. Using this approach, we demonstrate both second-harmonic generation (with a normalized efficiency of $0.2\,\%\,\mathrm{W^{-1} cm^{-2}}$) and, to our knowledge, the first degenerate $χ^{(2)}$ optical parametric amplifier (with relative gain of $0.02\,\mathrm{dB}$ using $3\,\mathrm{mW}$ of pump power on-chip at a pump wavelength of $1196\,\mathrm{nm}$) using silicon-on-insulator waveguides fabricated in a CMOS-compatible commercial foundry. We expect this technology to enable the integration of novel nonlinear optical devices such as optical parametric amplifiers, oscillators, and frequency converters into large-scale, hybrid photonic-electronic systems by leveraging the extensive ecosystem of CMOS fabrication.
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Submitted 15 July, 2022;
originally announced July 2022.
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Readout of Superconducting Nanowire Single Photon Detectors through Forward Biased Optical Modulators
Authors:
Marc de Cea,
Emma E. Wollman,
Amir H. Atabaki,
Dodd J. Gray,
Matthew D. Shaw,
Rajeev J. Ram
Abstract:
Scalable, high speed data transfer between cryogenic (0.1-4 K) and room temperature environments is instrumental in a broad range of fields including quantum computing, superconducting electronics, single photon imaging and space-based communications. A promising approach to overcome the limitations of conventional wire-based readout is the use of optical fiber communication. Optical fiber present…
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Scalable, high speed data transfer between cryogenic (0.1-4 K) and room temperature environments is instrumental in a broad range of fields including quantum computing, superconducting electronics, single photon imaging and space-based communications. A promising approach to overcome the limitations of conventional wire-based readout is the use of optical fiber communication. Optical fiber presents a 100-1,000x lower heat load than conventional electrical wiring, relaxing the requirements for thermal anchoring, and is also immune to electromagnetic interference, which allows routing of sensitive signals with improved robustness to noise and crosstalk. Most importantly, optical fibers allow for very high bandwidth densities (in the Tbps/mm$^2$ range) by carrying multiple signals through the same physical fiber (Wavelength Division Multiplexing, WDM). Here, we demonstrate for the first time optical readout of a superconducting nanowire single-photon detector (SNSPD) directly coupled to a CMOS photonic modulator, without the need for an interfacing device. By operating the modulator in the forward bias regime at a temperature of 3.6 K, we achieve very high modulation efficiency (1000-10,000 pm/V) and a low input impedance of 500 $Ω$ with a low power dissipation of 40 $μ$W. This allows us to obtain optical modulation with the low, millivolt-level signal generated by the SNSPD. Optical communication is becoming the preferred I/O solution in modern, room temperature high performance systems, and this work demonstrates its suitability for scalable cryogenic readout, which could help achieve the full potential of superconducting technologies.
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Submitted 29 January, 2020;
originally announced February 2020.
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Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes
Authors:
Parthiban Santhanam,
Wei Li,
Bo Zhao,
Chris Rogers,
Dodd Joseph Gray Jr.,
Phillip Jahelka,
Harry A. Atwater,
Shanhui Fan
Abstract:
The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED ($λ\approx$ 1330nm) with an unconventional dopant profile. Compared against that of our…
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The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED ($λ\approx$ 1330nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional $n^+$-$n$-$p^+$ double hetero-junction LED, the dopant profile near the $n$-$p^+$ hetero-structure of the new design displaces the built-in electric field in such a way as to suppress the J02 space charge recombination current. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.
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Submitted 29 January, 2020;
originally announced January 2020.
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Low-Temperature Annihilation Rate for Quasi-Localized Excitons in Monolayer MoS2
Authors:
Eric Chatterjee,
Daniel B. S. Soh,
Christopher Rogers,
Dodd J. Gray,
Hideo Mabuchi
Abstract:
The strong Coulomb forces in monolayer transition metal dichalcogenides ensure that optical excitation of band electrons gives rise to Wannier-Mott excitonic states, each of which can be conceptualized as a composite of a Gaussian wavepacket corresponding to center-of-mass motion and an orbital state corresponding to the motion of the electron and hole about the center-of-mass. Here, we show that…
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The strong Coulomb forces in monolayer transition metal dichalcogenides ensure that optical excitation of band electrons gives rise to Wannier-Mott excitonic states, each of which can be conceptualized as a composite of a Gaussian wavepacket corresponding to center-of-mass motion and an orbital state corresponding to the motion of the electron and hole about the center-of-mass. Here, we show that at low temperature in monolayer MoS2, given quasi-localized excitons and consequently a significant inter-exciton spacing, the excitons undergo dipole-dipole interaction and annihilate one another in a manner analogous to Auger recombination. To construct our model, we assume that each exciton is localized in a region whose length is on the same scale as the excitonic diameter, thus causing the exciton to behave in a fermionic manner, while the distance between neighboring excitons is much larger than the exciton diameter. We construct the orbital ladder operators for each exciton and apply Fermi's Golden Rule to derive the overall recombination rate as a function of exciton density.
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Submitted 8 September, 2019; v1 submitted 22 April, 2019;
originally announced April 2019.
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Optical nonlinearities of excitons in monolayer MoS2
Authors:
Daniel B. S. Soh,
Christopher Rogers,
Dodd J. Gray,
Eric Chatterjee,
Hideo Mabuchi
Abstract:
We calculate linear and nonlinear optical susceptibilities arising from the excitonic states of mono- layer MoS2 for in-plane light polarizations, using second-quantized bound and unbound exciton operators. Optical selection rules are critical for obtaining the susceptibilities. We derive the valley-chirality rule for the second harmonic generation in monolayer MoS2, and find that the third- harmo…
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We calculate linear and nonlinear optical susceptibilities arising from the excitonic states of mono- layer MoS2 for in-plane light polarizations, using second-quantized bound and unbound exciton operators. Optical selection rules are critical for obtaining the susceptibilities. We derive the valley-chirality rule for the second harmonic generation in monolayer MoS2, and find that the third- harmonic process is efficient only for linearly polarized input light while the third-order two photon process (optical Kerr effect) is efficient for circularly polarized light using a higher order exciton state. The absence of linear absorption due to the band gap and the unusually strong two-photon third-order nonlinearity make the monolayer MoS2 excitonic structure a promising resource for coherent nonlinear photonics.
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Submitted 27 March, 2018; v1 submitted 28 November, 2017;
originally announced November 2017.
