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Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
E. Bellingeri,
V. Braccini,
D. Marre,
M. Putti,
P. Manfrinetti,
A. Palenzona,
F. Borgatti,
R. Felici,
C. Aruta
Abstract:
The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and st…
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The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.
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Submitted 28 September, 2001;
originally announced September 2001.
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Transport properties of c-oriented MgB2 thin films grown by Pulsed Laser Deposition
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
V. Braccini,
M. Putti,
P. Manfrinetti,
A. Palenzona
Abstract:
The electronic anisotropy in MgB2, which arises from its layered crystal structure is not completely clear until now. High quality c-oriented films offer the opportunity of studying such property. MgB2 thin films were deposited by using two methods both based on room temperature precursor deposition (by Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods differ for the…
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The electronic anisotropy in MgB2, which arises from its layered crystal structure is not completely clear until now. High quality c-oriented films offer the opportunity of studying such property. MgB2 thin films were deposited by using two methods both based on room temperature precursor deposition (by Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods differ for the starting targets: stoichiometric MgB2 in one case and Boron in the other. The two films presented in this paper are grown by means of the two techniques on MgO substrates and are both c-oriented; they present TC values of 31.5 and 37.4 K respectively. Upper critical field measurements, up to 9T, with the magnetic field in perpendicular and parallel directions in respect to the film surface evidenced anisotropy ratios of 1.8 and 1.4 respectively. In this paper we will discuss this remarkable and surprising difference also in comparison with the literature data.
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Submitted 26 September, 2001;
originally announced September 2001.
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Josephson effect and tunneling spectroscopy in Nb/Al2O3/Al/MgB2 thin films junctions
Authors:
G. Carapella,
N. Martucciello,
G. Costabile,
C. Ferdeghini,
V. Ferrando,
G. Grassano
Abstract:
We report the demonstration of dc and ac Josephson effects as well as tunneling spectroscopy measurements on Nb/Al2O3/Al/MgB2 thin films heterostructures. Data on dc Josephson effect suggest the presence of two characteristic critical currents possibly accounted for the presence of two gaps in the MgB2 film. Tunneling spectroscopy measurements confirm this two-gap scenario and are explained with…
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We report the demonstration of dc and ac Josephson effects as well as tunneling spectroscopy measurements on Nb/Al2O3/Al/MgB2 thin films heterostructures. Data on dc Josephson effect suggest the presence of two characteristic critical currents possibly accounted for the presence of two gaps in the MgB2 film. Tunneling spectroscopy measurements confirm this two-gap scenario and are explained with the presence of tunneling from both dirty limit and clean limit regions, reflecting two different order parameter amplitudes. The behavior of these two gaps is found in good agreement with the predictions of a recently proposed multigap theory.
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Submitted 13 August, 2001;
originally announced August 2001.
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Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
E. Bellingeri,
V. Braccini,
D. Marre',
P. Manfrinetti,
A. Palenzona,
F. Borgatti,
R. Felici,
T. -L. Lee
Abstract:
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and…
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MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and 100angstrom along c-axis) but the general resistivity behavior and the remarkable extension of the irreversible region confirm that the grains boundaries are not barriers for supercurrents. Upper critical field measurements with the magnetic field perpendicular and parallel with respect to the film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values are considerably higher with respect to the bulk ones, namely when the field lies in the basal plane, and the field-temperature phase diagram for the two magnetic field orientations suggest the possibility of strongly enhancing the pinning region by means of texturing.
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Submitted 2 July, 2001;
originally announced July 2001.
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In-situ Magnesium Diboride Superconducting Thin Films grown by Pulsed Laser Deposition
Authors:
G. Grassano,
W. Ramadan,
V. Ferrando,
E. Bellingeri,
D. Marre',
C. Ferdeghini,
G. Grasso,
M. Putti,
A. S. Siri,
P. Manfrinetti,
A Palenzona,
A. Chincarini
Abstract:
Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor m…
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Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor metallic or weak semiconducting behavior and they became superconducting only after an ex-situ annealing in Mg vapor atmosphere. Up to now, no difference in the superconducting properties of the films obtained by these two procedures has been evidenced.
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Submitted 28 March, 2001; v1 submitted 27 March, 2001;
originally announced March 2001.
