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Monolithic Germanium Tin on Si Avalanche Photodiodes
Authors:
Justin Rudie,
Sylvester Amoah,
Xiaoxin Wang,
Rajesh Kumar,
Grey Abernathy,
Steven Akwabli,
Perry C. Grant,
Jifeng Liu,
Baohua Li,
Wei Du,
Shui-Qing Yu
Abstract:
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before ava…
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We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.
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Submitted 22 May, 2024;
originally announced May 2024.
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Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics
Authors:
Grey Abernathy,
Yiyin Zhou,
Solomon Ojo,
Bader Alharthi,
Perry C. Grant,
Wei Du,
Joe Margetis,
John Tolle,
Andrian Kuchuk,
Baohua Li,
Shui-Qing Yu
Abstract:
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to improve the device performance. While the multiple QW structure is preferred for the device application, the single quantum well (SQW) is more suitable for…
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The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to improve the device performance. While the multiple QW structure is preferred for the device application, the single quantum well (SQW) is more suitable for optical property study. In this work, a comprehensive study of a SiGeSn/GeSn SQW was conducted. The calculated band diagram provided the band alignment and energies of possible transitions. The SQW features the direct bandgap well with L-Γ valley energy separation of 50 meV, and the barrier heights for both electron and hole are greater than 80 meV. Using two continuous-wave and two pulsed pum** lasers, the analysis of PL spectra allows for identifying different transitions and for better understanding the SQW optical properties. The study could provide the guidance for advancing the future QW design towards device applications.
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Submitted 25 September, 2020;
originally announced September 2020.
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Si-based GeSn photodetectors towards mid-infrared imaging applications
Authors:
Huong Tran,
Thach Pham,
Joe Margetis,
Yiyin Zhou,
Wei Dou,
Perry C. Grant,
Joshua M. Grant,
Sattar Alkabi,
Greg Sun,
Richard A. Soref,
John Tolle,
Yong-Hang Zhang,
Wei Du,
Baohua Li,
Mansour Mortazavi,
Shui-Qing Yu
Abstract:
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of…
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This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.
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Submitted 6 June, 2019;
originally announced June 2019.
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UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
Authors:
P. C. Grant,
W. Dou,
B. Alharthi,
J. M. Grant,
H. Tran,
G. Abernathy,
A. Mosleh,
W. Du,
5 B. Li,
M. Mortazavi,
H. A. Naseem,
S. Q. Yu
Abstract:
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of parameter window is difficult from the beginning due to its non-equilibrium growth condition. In this work, we demonstrated the effective pathway…
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The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of parameter window is difficult from the beginning due to its non-equilibrium growth condition. In this work, we demonstrated the effective pathway to achieve the high quality GeSn with high Sn incorporation. The GeSn films were grown on Ge-buffered Si via ultra-high vacuum chemical vapor deposition using GeH4 and SnCl4 as precursor gasses. The influence of both SnCl4 flow fraction and growth temperature on the Sn incorporation and material quality were investigated. The key to achieve effective Sn incorporation and high material quality is to explore the proper parameter match between SnCl4 supply and growth temperature, which is also called optimized growth regime. The Sn precipitation is significantly suppressed in optimized growth regime, leading to more Sn incorporation into Ge and enhanced material quality. The prototype GeSn photoconductors were fabricated with typical samples, showing the promising devices applications towards mid-infrared optoelectronics.
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Submitted 5 October, 2018;
originally announced October 2018.
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Analysis of Gamma Rays and Cosmic Muons with a Single Detector
Authors:
Abdel G. Bachri,
Perry C. Grant,
Azriel Goldschmidt
Abstract:
We report on the construction and upgrade of a Lawrence Berkeley National Laboratory Cosmic Muons Detector. We modify the electronics and mechanics to achieve a highly efficient gamma-ray and cosmic-ray detector. Each detector module uses a one-inch-thick scintillator, attached to a photomultiplier tube (PMT) and mounted on a solid aluminum frame. The detector uses scintillation to transform passi…
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We report on the construction and upgrade of a Lawrence Berkeley National Laboratory Cosmic Muons Detector. We modify the electronics and mechanics to achieve a highly efficient gamma-ray and cosmic-ray detector. Each detector module uses a one-inch-thick scintillator, attached to a photomultiplier tube (PMT) and mounted on a solid aluminum frame. The detector uses scintillation to transform passing radiation into detectable photons that are guided toward a photocathode surface of the PMT, triggering the release of photoelectrons that are then amplified to yield measurable electronic signals. The modules were connected to an electronics section that compared the signals from the two PMTs and logically determined if they were coincidence events. A data-collection device was added for faster and prolonged count rates. A cobalt-60, which produced two gamma rays and a beta particle has been used as a calibration source. To investigate the isotropic behavior of radiation, two detection modules were adjusted to different angles of rotation with respect to each other, and the coincidence counts were measured. The coincidence counts from the modules set at various angles were consistent throughout the angular spectrum, and only lead shielding visibly reduced the number of counts from the radioactive source. The inverse-square-law behavior of radiation has also been considered. The results were such that the number of counts decreased as a function of increasing distance from the source. Furthermore, positioning the detector to point toward the sky in different orientations, we measured cosmic ray muon flux as the angle from the vertical was decreased. In doing so, we scanned different patches of the atmosphere. For the optimum operation during the detection phase, we plateaued both PMTs to single out their best operating gain voltage while eliminating false background noise signals.
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Submitted 22 July, 2011;
originally announced July 2011.
