-
Impact of growth conditions on the domain nucleation and domain wall propagation in Pt/Co/Pt stacks
Authors:
C. P. Quinteros,
M. J. Cortes Burgos,
L. J. Albornoz,
J. Gomez,
P. Granell,
F. Golmar,
M. L. Ibarra,
S. Bustingorry,
J. Curiale,
M. Granada
Abstract:
Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers…
▽ More
Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers were deposited by dc sputtering, and the parameters varied in this study were the Co thickness, the substrate roughness, and the base pressure in the deposition chamber. Magneto-optical Kerr effect-based magnetometry and microscopy combined with X-ray reflectometry, atomic force microscopy, and transmission electron microscopy were adopted as experimental techniques. This permitted us to elucidate the impact on the hysteresis loops and on the domain wall dynamics, produced by different growth conditions. As other authors, we found that Co thickness is strongly determinant for both the coercive field and the domain wall velocity. On the contrary, the topographic roughness of the substrate and the base pressure of the deposition chamber evidence a selective impact on the nucleation of magnetic domains and on domain wall propagation, respectively, providing a tool to tune these properties.
△ Less
Submitted 29 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
-
Effect of mixed pinning landscapes produced by 6 MeV Oxygen irradiation on the resulting critical current densities J$_c$ in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors grown by co-evaporation
Authors:
N. Haberkorn,
S. Suárez,
P. D. Pérez,
H. Troiani,
P. Granell,
F. Golmar,
Jae-Hun Lee,
S. H. Moon
Abstract:
We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and…
▽ More
We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and 4x10$^{14}$ cm$^{-2}$. At temperatures below 40 K with the magnetic field applied parallel (H//c) and at 45° (H//45°) to the c-axis, the in-field J$_c$ dependences can be significantly improved by irradiation. For doses of 1x10$^{14}$ cm$^{-2}$ the J$_c$ values at $μ$$_0$H = 5 T are doubled without affecting significantly the J$_c$ at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H//c and H//45° in pristine films presents characteristic glassy exponents $μ$ = 1.63 and $μ$ = 1.45, respectively. For samples irradiated with 1x10$^{14}$ cm$^{-2}$, these values drop to $μ$ = 1.45 and $μ$ =1.24, respectively.
△ Less
Submitted 17 August, 2017; v1 submitted 13 June, 2017;
originally announced June 2017.
-
Manganite-based three level memristive devices with self-healing capability
Authors:
W. Román Acevedo,
D. Rubi,
J. Lecourt,
U. Lüders,
F. Gomez-Marlasca,
P. Granell,
F. Golmar,
P. Levy
Abstract:
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an interm…
▽ More
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.
△ Less
Submitted 16 June, 2016;
originally announced June 2016.
