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Selective area epitaxy of in-plane HgTe nanostrcutures on CdTe(001) substrate
Authors:
Nicolas Chaize,
Xavier Baudry,
Pierre-Henri Jouneau,
Eric Gautier,
Jean-Luc Rouvière,
Yves Deblock,
Jimmy Xu,
Maxime Berthe,
Clément Barbot,
Bruno Grandidier,
Ludovic Desplanque,
Hermann Sellier,
Philippe Ballet
Abstract:
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular bea…
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Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO$_{\mathrm{2}}$ mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <$110$>, <$1\bar{\mathrm{1}}0$>, or <$100$> direction, the deposited thickness, and the growth temperature. Several micron long in-plane nanowires can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a growth temperature as low as $140$°C and growth rate up to $0.5$ ML/s. For <$110$> oriented nanowires, the center of the nanostructure exhibits a trapezoidal shape with {$111$}B facets and two grains on the sides, while <$1\bar{\mathrm{1}}0$> oriented nanowires show {$111$}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe nanowire. Measurements of the resistance with fourpoint scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.
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Submitted 11 July, 2024;
originally announced July 2024.
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Resolving the structure of the striped Ge layer on Ag(111): Ag$_2$Ge surface alloy with alternate fcc and hcp domains
Authors:
K. Zhang,
D. Sciacca,
A. Coati,
R. Bernard,
Yves Borensztein,
P. Diener,
B. Grandidier,
I. Lefebvre,
M. Derivaz,
C. Pirri,
Geoffroy Prévot
Abstract:
Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, promise new physical properties such as quantum spin Hall effect. While there have been many claims of growth of germanene, the lack of precise structural characterization of the epitaxial layers synthesized hinders further research. The striped layer formed by Ge deposition on Ag(111) has been recently ascribed as a stret…
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Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, promise new physical properties such as quantum spin Hall effect. While there have been many claims of growth of germanene, the lack of precise structural characterization of the epitaxial layers synthesized hinders further research. The striped layer formed by Ge deposition on Ag(111) has been recently ascribed as a stretched germanene layer. Using surface X-ray diffraction and density functional theory calculations, we demonstrate that it corresponds in fact to a Ag$_2$Ge surface alloy with an atomic density 6.45% higher than the Ag(111) atomic density. The overall structure is formed by stripes associated with a face-centered cubic top-layer alignment, alternating with stripes associated with an hexagonal-close-packed top-layer alignment, in great analogy with the ($22\times\sqrt3$) Au(111) reconstruction.
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Submitted 6 October, 2021;
originally announced October 2021.
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Single-electron tunneling PbS/InP neuromorphic computing building blocks
Authors:
Paulo F. Jarschel,
** H. Kim,
Louis Biadala,
Maxime Berthe,
Yannick Lambert,
Richard M. Osgood,
Gilles Patriarche,
Bruno Grandidier,
Jimmy Xu
Abstract:
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights int…
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We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of experimental data in the SET framework. The estimated minimum energy required for a synaptic operation is in the order of 1 fJ, while the maximum frequency of operation can reach the MHz range.
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Submitted 22 August, 2019;
originally announced August 2019.
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Persistent enhancement of the carrier density in electron irradiated InAs nanowires
Authors:
Corentin Durand,
Maxime Berthe,
Younes Makoudi,
Jean-Philippe Nys,
Renaud Leturcq,
Philippe Caroff,
Bruno Grandidier
Abstract:
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to…
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We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk.
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Submitted 2 April, 2013;
originally announced April 2013.
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Optical absorption of silicon nanowires
Authors:
Tao Xu,
Yannick Lambert,
Christophe Krzeminski,
Bruno Grandidier,
Didier Stiévenard,
Gaëtan Lévêque,
Abdellatif Akjouj,
Yan Pennec,
Bahram Djafari-Rouhani
Abstract:
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on…
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We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the Finite Difference Time Domain (FDTD) method is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies, that allows to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.
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Submitted 17 September, 2012;
originally announced September 2012.
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Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces
Authors:
G. Mahieu,
Bruno Grandidier,
Didier Stiévenard,
Christophe Krzeminski,
Christophe Delerue,
Jean Roncali,
C. Martineau
Abstract:
A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chai…
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A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chains, a spontaneous ordered film is observed on the HOPG surface. As the interaction of the oligomers is different with both surfaces, the utility of the Si(100) surface to characterize individual oligomers prior to their use into a 2D layer is discussed.
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Submitted 18 April, 2012;
originally announced April 2012.
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Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface
Authors:
Bruno Grandidier,
Jean-Philippe Nys,
Didier Stiévenard,
Christophe Krzeminski,
Christophe Delerue,
Pierre Frere,
Phillippe Blanchard,
Jean Roncali
Abstract:
The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene are highly voltage dependent. We discuss the influence of the alkyl chains on the adsorption process an…
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The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene are highly voltage dependent. We discuss the influence of the alkyl chains on the adsorption process and on the appearance of the molecules in the STM images.
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Submitted 18 April, 2012;
originally announced April 2012.
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Efficient photogeneration of charge carriers in silicon nanowires with a radial do** gradient
Authors:
D. H. K. Murthy,
T. Xu,
W. H. Chen,
J. Houtepen A.,
T. J. Savenije,
L. D. A. Siebbeles,
J. P. Nys,
Christophe Krzeminski,
Bruno Grandidier,
Didier Stiévenard,
Philippe Pareige,
F. Jomard,
Gilles Patriache,
O. I. Lebedev
Abstract:
From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities duri…
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From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
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Submitted 28 June, 2011;
originally announced June 2011.
