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Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Authors:
Johannes K. Zettler,
Pierre Corfdir,
Christian Hauswald,
Esperanza Luna,
Uwe Jahn,
Timur Flissikowski,
Emanuel Schmidt,
Carsten Ronning,
Achim Trampert,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt,
Sergio Fernández-Garrido
Abstract:
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s…
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The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.
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Submitted 30 January, 2024;
originally announced January 2024.
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A 3.5-THz, x6-Harmonic, Single-Ended Schottky Diode Mixer for Frequency Stabilization of Quantum-Cascade Lasers
Authors:
Divya Jayasankar,
Vladimir Drakinskiy,
Nick Rothbart,
Heiko Richter,
Xiang Lü,
Lutz Schrottke,
Holger T. Grahn,
Martin Wienold,
Heinz-Wilhelm Hübers,
Peter Sobis,
Jan Stake
Abstract:
Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The…
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Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed frequency converter is based on a single-ended, planar Schottky diode with a sub-micron anode contact area defined on a suspended 2-$μ$m ultra-thin GaAs substrate. The dc-grounded anode pad was combined with the radio frequency E-plane probe, which resulted in an electrically compact circuit. At 200 MHz intermediate frequency, a mixer conversion loss of about 59 dB is measured and resulting in a 40 dB signal-to-noise ratio for phase locking 3.5-THz quantum-cascade laser. Using a quasi-static diode model combined with electromagnetic simulations, good agreement with the measured results was obtained. Harmonic frequency converters without the need of cryogenic cooling will help in the realization of highly sensitive space and air-borne heterodyne receivers.
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Submitted 29 August, 2021; v1 submitted 17 June, 2021;
originally announced July 2021.
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Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Authors:
Hanno Küpers,
Ryan B. Lewis,
Pierre Corfdir,
Michael Niehle,
Timur Flissikowski,
Holger T. Grahn,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell qu…
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Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not im**e at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlap** fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells.
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Submitted 23 June, 2021;
originally announced June 2021.
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Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice
Authors:
Emanuel Mompo,
Miguel Ruiz Garcia,
Manuel Carretero,
Holger T. Grahn,
Yaohui Zhang,
Luis L. Bonilla
Abstract:
Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with $2N+2$ degrees of freedom: electron densities and fields at $N$ superlattice periods plus the total current and the field at the injector. External noise of sufficient amplitude induces regular current self-oscillations (coherence resonance) in states that are stati…
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Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with $2N+2$ degrees of freedom: electron densities and fields at $N$ superlattice periods plus the total current and the field at the injector. External noise of sufficient amplitude induces regular current self-oscillations (coherence resonance) in states that are stationary in the absence of noise. Numerical simulations show that these oscillations are due to the repeated nucleation and motion of charge dipole waves that form at the emitter when the current falls below a critical value. At the critical current, the well-to-well tunneling current intersects the contact load line. We have determined the device-dependent critical current for the coherence resonance from experiments and numerical simulations. We have also described through numerical simulations how a coherence resonance triggers a stochastic resonance when its oscillation mode becomes locked to a weak ac external voltage signal. Our results agree with the experimental observations.
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Submitted 18 November, 2020;
originally announced November 2020.
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Electronic and magnetic properties of $α$-FeGe$_2$ films embedded in vertical spin valve devices
Authors:
Dietmar Czubak,
Samuel Gaucher,
Lars Oppermann,
Jens Herfort,
Klaus Zollner,
Jaroslav Fabian,
Holger T. Grahn,
Manfred Ramsteiner
Abstract:
We studied metastable $α$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with a metallic transport behavior of the $α$-FeGe$_2$ spacer layer. The spin valve signals are found to increase both with temperature and spacer thickn…
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We studied metastable $α$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with a metallic transport behavior of the $α$-FeGe$_2$ spacer layer. The spin valve signals are found to increase both with temperature and spacer thickness, which is discussed in terms of a decreasing magnetic coupling strength between the ferromagnetic bottom and top electrodes. The temperature-dependent resistances of the spin valve structures exhibit characteristic features, which are explained by ferromagnetic phase transitions between 55 and 110~K. The metallic transport characteristics as well as the low-temperature ferromagnetism are found to be consistent with the results of first-principles calculations.
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Submitted 27 October, 2020; v1 submitted 9 October, 2020;
originally announced October 2020.
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Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Authors:
Oliver Brandt,
Vladimir M. Kaganer,
Jonas Lähnemann,
Timur Flissikowski,
Carsten Pfüller,
Karl K. Sabelfeld,
Anastasya E. Kireeva,
Caroline Chèze,
Raffaella Calarco,
Holger T. Grahn,
Uwe Jahn
Abstract:
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatur…
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We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatures lower than 120 K, a quantum capture process has to be taken into account in addition. Combining the diffusion length extracted from these profiles and the effective carrier lifetime measured by time-resolved photoluminescence experiments, we deduce the carrier diffusivity as a function of temperature. The experimental values are found to be close to theoretical ones for the ambipolar diffusivity of free carriers limited only by intrinsic phonon scattering. This agreement is shown to be fortuitous. The high diffusivity at low temperatures instead originates from an increasing participation of excitons in the diffusion process.
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Submitted 23 November, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
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Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields
Authors:
T. Auzelle,
M. Azadmand,
T. Flissikowski,
M. Ramsteiner,
K. Morgenroth,
C. Stemmler,
S. Fernández-Garrido,
S. Sanguinetti,
H. T. Grahn,
L. Geelhaar,
O. Brandt
Abstract:
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a…
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GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.
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Submitted 4 February, 2021; v1 submitted 17 January, 2020;
originally announced January 2020.
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Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
Authors:
C. Sinito,
P. Corfdir,
C. Pfüller,
G. Gao,
J. Bartolomé Vílchez,
S. Kölling,
A. Rodil Doblado,
U. Jahn,
J. Lähnemann,
T. Auzelle,
J. K. Zettler,
T. Flissikowski,
P. Koenraad,
H. T. Grahn,
L. Geelhaar,
S. Fernández-Garrido,
O. Brandt
Abstract:
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua…
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Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization do** of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.
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Submitted 8 August, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
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Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
Authors:
F. Feix,
T. Flissikowski,
K. K. Sabelfeld,
V. M. Kaganer,
M. Wölz,
L. Geelhaar,
H. T. Grahn,
O. Brandt
Abstract:
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence…
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We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of photoluminescence transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power law decay for (In,Ga)N/GaN{0001} quantum wells and disks.
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Submitted 20 March, 2017;
originally announced March 2017.
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Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice
Authors:
Zhizhen Yin,
Helun Song,
Yaohui Zhang,
Miguel Ruiz-Garcia,
Manuel Carretero,
Luis L. Bonilla,
Klaus Biermann,
Holger T. Grahn
Abstract:
Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages,…
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Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable, and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.
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Submitted 11 January, 2017; v1 submitted 10 January, 2017;
originally announced January 2017.
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Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Authors:
Carsten Pfüller,
Pierre Corfdir,
Christian Hauswald,
Timur Flissikowski,
Xiang Kong,
Johannes K. Zettler,
Sergio Fernández-Garrido,
Pınar Doğan,
Holger T. Grahn,
Achim Trampert,
Lutz Geelhaar,
Oliver Brandt
Abstract:
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of sho…
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We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of N- and Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries.
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Submitted 19 October, 2016; v1 submitted 14 July, 2016;
originally announced July 2016.
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Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime
Authors:
Jonas Lähnemann,
Timur Flissikowski,
Martin Wölz,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt,
Uwe Jahn
Abstract:
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trap** at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewall…
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Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trap** at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.
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Submitted 12 October, 2017; v1 submitted 12 July, 2016;
originally announced July 2016.
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Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
Authors:
Felix Feix,
Timur Flissikowski,
Caroline Chèze,
Raffaella Calarco,
Holger T. Grahn,
Oliver Brandt
Abstract:
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power la…
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We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.
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Submitted 19 July, 2016; v1 submitted 3 May, 2016;
originally announced May 2016.
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Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots
Authors:
Pierre Corfdir,
Hanno Küpers,
Ryan B. Lewis,
Timur Flissikowski,
Holger T. Grahn,
Lutz Geelhaar,
Oliver Brandt
Abstract:
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiat…
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We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in the dynamics of charge carriers in the shell with increasing temperature, with particular emphasis on the transfer of carriers from the shell to the core of the nanowires. We finally discuss the implications of carrier localization in the (Al,Ga)As shell for fundamental studies and optoelectronic applications based on core-shell III-As nanowires.
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Submitted 4 August, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Radial Stark effect in (In,Ga)N nanowires
Authors:
Jonas Lähnemann,
Pierre Corfdir,
Felix Feix,
Jumpei Kamimura,
Timur Flissikowski,
Holger T. Grahn,
Lutz Geelhaar,
and Oliver Brandt
Abstract:
We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by x-ray diffractometry and energy dispersive x-ray spectroscopy.…
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We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by x-ray diffractometry and energy dispersive x-ray spectroscopy. This discrepancy arises from the pinning of the Fermi level at the sidewalls of the nanowires, which gives rise to strong radial built-in electric fields. The combination of the built-in electric fields with the compositional fluctuations inherent to (In,Ga)N alloys induces a competition between spatially direct and indirect recombination channels. At elevated temperatures, electrons at the core of the nanowire recombine with holes close to the surface, and the emission from unintentionally doped nanowires exhibits a Stark shift of several hundreds of meV. The competition between spatially direct and indirect transitions is analyzed as a function of temperature for samples with various Si concentrations. We propose that the radial Stark effect is responsible for the broadband absorption of (In,Ga)N nanowires across the entire visible range, which makes these nanostructures a promising platform for solar energy applications.
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Submitted 21 June, 2017; v1 submitted 26 January, 2016;
originally announced January 2016.
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Crystal-phase quantum dots in GaN quantum wires
Authors:
P. Corfdir,
C. Hauswald,
O. Marquardt,
T. Flissikowski,
J. K. Zettler,
S. Fernández-Garrido,
L. Geelhaar,
H. T. Grahn,
O. Brandt
Abstract:
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong bl…
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We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong blue shift of the transition originating from the radiative decay of stacking fault-bound excitons. Moreover, the radiative lifetime of this transition in the ultrathin nanowires is independent of temperature up to 60 K and significantly longer than that of the corresponding transition in as-grown nanowires. These findings reveal a zero-dimensional character of the confined exciton state and thus demonstrate that I1 stacking faults in ultrathin nanowires act as genuine quantum dots.
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Submitted 17 February, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
Authors:
P. Corfdir,
C. Hauswald,
J. K. Zettler,
T. Flissikowski,
J. Lähnemann,
S. Fernández-Garrido,
L. Geelhaar,
H. T. Grahn,
O. Brandt
Abstract:
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these excitons with temperature, they are demonstrated to exhibit a two-dimensional density of states, i. e., a basal-plane stacking fault acts as a quantum wel…
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We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these excitons with temperature, they are demonstrated to exhibit a two-dimensional density of states, i. e., a basal-plane stacking fault acts as a quantum well. From the slope of the linear increase, we determine the oscillator strength of the (I1;X) and show that the value obtained reflects the presence of large internal electrostatic fields across the stacking fault. While the recombination of donor-bound and free excitons in the GaN nanowire ensemble is dominated by nonradiative phenonema already at 10 K, we observe that the (I1;X) recombines purely radiatively up to 60 K. This finding provides important insight into the nonradiative recombination processes in GaN nanowires. First, the radiative lifetime of about 6 ns measured at 60 K sets an upper limit for the surface recombination velocity of 450 cm/s considering the nanowires mean diameter of 105 nm. Second, the density of nonradiative centers responsible for the fast decay of donor-bound and free excitons cannot be higher than 2x10^16 cm^-3. As a consequence, the nonradiative decay of donor-bound excitons in these GaN nanowire ensembles has to occur indirectly via the free exciton state.
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Submitted 22 August, 2014;
originally announced August 2014.
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Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Authors:
Christian Hauswald,
Pierre Corfdir,
Johannes K. Zettler,
Vladimir M. Kaganer,
Karl K. Sabelfeld,
Sergio Fernández-Garrido,
Timur Flissikowski,
Vincent Consonni,
Tobias Gotschke,
Holger T. Grahn,
Lutz Geelhaar,
Oliver Brandt
Abstract:
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly cou…
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We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly coupled even at low temperatures resulting in a common lifetime of these states. By solving the rate equations for a coupled two-level system, we show that one cannot, in practice, distinguish whether the nonradiative decay occurs directly via the bound or indirectly via the free state. The nanowire surface and coalescence-induced dislocations appear to be the most obvious candidates for nonradiative defects, and we thus compare the exciton decay times measured for a variety of GaN nanowire ensembles with different surface-to-volume ratio and coalescence degrees. The data are found to exhibit no correlation with either of these parameters, i. e., the dominating nonradiative channel in the GaN nanowires under investigation is neither related to the nanowire surface, nor to coalescence-induced defects for the present samples. Hence, we conclude that nonradiative point defects are the origin of the fast recombination dynamics of excitons in GaN nanowires.
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Submitted 6 August, 2014;
originally announced August 2014.
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Luminescence associated with stacking faults in GaN
Authors:
Jonas Lähnemann,
Uwe Jahn,
Oliver Brandt,
Timur Flissikowski,
Pinar Dogan,
Holger T. Grahn
Abstract:
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum we…
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Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.
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Submitted 30 July, 2014; v1 submitted 6 May, 2014;
originally announced May 2014.
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Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
Authors:
Christian Hauswald,
Timur Flissikowski,
Tobias Gotschke,
Raffaella Calarco,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt
Abstract:
Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct diameter distributions and show that the pronounced biexponential decay of the donor-bound exciton observed in each case is not caused by the nanowire surface. At long times, the individual exciton transitions decay with a…
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Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct diameter distributions and show that the pronounced biexponential decay of the donor-bound exciton observed in each case is not caused by the nanowire surface. At long times, the individual exciton transitions decay with a common lifetime, which suggests a strong coupling between the corresponding exciton states. A system of non-linear rate-equations taking into account this coupling directly reproduces the experimentally observed biexponential decay.
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Submitted 8 August, 2013;
originally announced August 2013.
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Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Authors:
Benjamin Wilsch,
Uwe Jahn,
Bernd Jenichen,
Jonas Lähnemann,
Holger T. Grahn
Abstract:
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing in…
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The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing indium content toward the surface of the (In,Ga)N layer, which is known as the compositional pulling effect. Moreover, we identify the strained bottom, unstrained top, and gradually relaxed intermediate region of the (In,Ga)N layer. In addition to an increase of the indium content along the growth direction, the strain relaxation leads to an enhancement of the lateral variations of the indium distribution toward the surface.
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Submitted 17 January, 2013;
originally announced January 2013.
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Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media
Authors:
J. I. Arana,
L. L. Bonilla,
H. T. Grahn
Abstract:
Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods…
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Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods. These superlattices can also support pulses of the electric field. Pulses moving downstream with the flux of electrons can be constructed from their component wave fronts, whereas pulses advancing upstream do so slowly and experience saltatory motion: they change slowly in long intervals of time separated by fast transitions during which the pulses jump to the previous superlattice period. Photoexcited superlattices can also behave as oscillatory media and exhibit wave trains.
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Submitted 30 September, 2011;
originally announced September 2011.
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Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Authors:
Jonas Lähnemann,
Oliver Brandt,
Carsten Pfüller,
Timur Flissikowski,
Uwe Jahn,
Esperanza Luna,
Michael Hanke,
Matthias Knelangen,
Achim Trampert,
Holger T. Grahn
Abstract:
We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demon…
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We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demonstrate that our (In,Ga)N/GaN nanowire heterostructures are subject to the quantum-confined Stark effect. Additional sharp peaks in the spectra, which do not shift with excitation density, are attributed to emission from localized states created by compositional fluctuations in the ternary (In,Ga)N alloy.
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Submitted 27 September, 2011;
originally announced September 2011.
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Photo-excited semiconductor superlattices as constrained excitable media: Motion of dipole domains and current self-oscillations
Authors:
J. I. Arana,
L. L. Bonilla,
H. T. Grahn
Abstract:
A model for charge transport in undoped, photo-excited semiconductor superlattices, which includes the dependence of the electron-hole recombination on the electric field and on the photo-excitation intensity through the field-dependent recombination coefficient, is proposed and analyzed. Under dc voltage bias and high photo-excitation intensities, there appear self-sustained oscillations of the…
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A model for charge transport in undoped, photo-excited semiconductor superlattices, which includes the dependence of the electron-hole recombination on the electric field and on the photo-excitation intensity through the field-dependent recombination coefficient, is proposed and analyzed. Under dc voltage bias and high photo-excitation intensities, there appear self-sustained oscillations of the current due to a repeated homogeneous nucleation of a number of charge dipole waves inside the superlattice. In contrast to the case of a constant recombination coefficient, nucleated dipole waves can split for a field-dependent recombination coefficient in two oppositely moving dipoles. The key for understanding these unusual properties is that these superlattices have a unique static electric-field domain. At the same time, their dynamical behavior is akin to the one of an extended excitable system: an appropriate finite disturbance of the unique stable fixed point may cause a large excursion in phase space before returning to the stable state and trigger pulses and wave trains. The voltage bias constraint causes new waves to be nucleated when old ones reach the contact.
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Submitted 24 December, 2009;
originally announced December 2009.
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Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices
Authors:
J. Kastrup,
R. Hey,
K. H. Ploog,
H. T. Grahn,
L. L. Bonilla,
M. Kindelan,
M. Moscoso,
A. Wacker
Abstract:
Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain for…
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Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the do** density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low and high field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a new type of tunable GHz oscillator based on semiconductor superlattices.
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Submitted 23 July, 1997;
originally announced July 1997.