Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl$_3$
Authors:
Xin-Yue Zhang,
Thomas K. M. Graham,
Yu-Xuan Wang,
Hyeonhu Bae,
Nazar Delegan,
Zhi-Cheng Wang,
Jakub Regner,
Kenji Watanabe,
Takashi Taniguchi,
Minkyung Jung,
Zdeněk Sofer,
Fazel Tafti,
David D. Awschalom,
F. Joseph Heremans,
Binghai Yan,
Brian B. Zhou
Abstract:
Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. In 2D semiconductors, the properties of excitons often vary due to the underlying magnetic order, but the modification of their magnetic properties by excitonic processes remains difficult to achieve. Here, we integrate exci…
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Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. In 2D semiconductors, the properties of excitons often vary due to the underlying magnetic order, but the modification of their magnetic properties by excitonic processes remains difficult to achieve. Here, we integrate exciton pum** into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically-induced transient stray fields in few-layer, antiferromagnetic CrCl$_3$. We discover that exciton recombination enhances the in-plane magnetization of the CrCl$_3$ layers, with an outsized effect in the surface monolayers and when the surface is unencapsulated. Concomitantly, time-resolved photoluminescence measurements reveal that a defect-assisted Auger recombination dominates for atomically thin CrCl$_3$ with tightly localized, nearly forbidden excitons and amplified surface-to-volume ratio. These experimental signatures establish the magnetically enhanced state to result from an exciton-activated electron transfer between surface impurities and the spin-polarized conduction band. Density functional theory calculations identify that the mediating impurity state could originate from oxygen adsorbates with spins antiparallel to the magnetization of their host layer. Our work unambiguously demonstrates the tunability of single intrinsic magnetic layers via defect engineering and opens a pathway to dynamically reconfigure these effects in devices through optical control.
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Submitted 13 December, 2023;
originally announced December 2023.
Visualizing bulk and edge photocurrent flow in anisotropic Weyl semimetals
Authors:
Yu-Xuan Wang,
Xin-Yue Zhang,
Chunhua Li,
Xiaohan Yao,
Ruihuan Duan,
Thomas K. M. Graham,
Zheng Liu,
Fazel Tafti,
David Broido,
Ying Ran,
Brian B. Zhou
Abstract:
Materials that rectify light into current in their bulk are desired for optoelectronic applications. In inversion-breaking Weyl semimetals, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy (SPCM), which convolves the effects of photocurrent gen…
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Materials that rectify light into current in their bulk are desired for optoelectronic applications. In inversion-breaking Weyl semimetals, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy (SPCM), which convolves the effects of photocurrent generation and collection. Here, we directly image the photocurrent flow inside the type-II Weyl semimetals WTe2 and TaIrTe4 using high-sensitivity quantum magnetometry with nitrogen-vacancy center spins. We elucidate an unknown mechanism for bulk photocurrent generation termed the anisotropic photothermoelectric effect (APTE), where unequal thermopowers along different crystal axes drive intricate circulations of photocurrent around the photoexcitation. Using simultaneous SPCM and magnetic imaging at the sample's interior and edges, we visualize how the APTE stimulates the long-range photocurrent collected in our Weyl semimetal devices through the Shockley-Ramo theorem. Our results highlight an overlooked, but widely relevant source of current flow and inspire novel photodetectors using homogeneous materials with anisotropy.
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Submitted 13 December, 2022; v1 submitted 31 March, 2022;
originally announced March 2022.
