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Magnetoelectric domain engineering from micrometer to Ångstrøm scales
Authors:
Marcela Giraldo,
Arkadiy Simonov,
Hasung Sim,
Ahmed Samir Lotfy,
Martin Lilienblum,
Lea Forster,
Elzbieta Gradauskaite,
Morgan Trassin,
Je-Geun Park,
Thomas Lottermoser,
Manfred Fiebig
Abstract:
The functionality of magnetoelectric multiferroics depends on the formation, size, and coupling of their magnetic and electric domains. Knowing the parameters guiding these criteria is a key effort in the emerging field of magnetoelectric domain engineering. Here we show, using a combination of piezoresponse-force microscopy, non-linear optics, and x-ray scattering, that the correlation length set…
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The functionality of magnetoelectric multiferroics depends on the formation, size, and coupling of their magnetic and electric domains. Knowing the parameters guiding these criteria is a key effort in the emerging field of magnetoelectric domain engineering. Here we show, using a combination of piezoresponse-force microscopy, non-linear optics, and x-ray scattering, that the correlation length setting the size of the ferroelectric domains in the multiferroic hexagonal manganites can be engineered from the micron range down to a few unit cells under the substitution of Mn$^{3+}$ ions with Al$^{3+}$ ions. The magnetoelectric coupling mechanism between the antiferromagnetic Mn$^{3+}$ order and the distortive-ferroelectric order remains intact even at substantial replacement of Mn$^{3+}$ by Al$^{3+}$. Hence, chemical substitution proves to be an effective tool for domain-size engineering in one of the most studied classes of multiferroics.
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Submitted 13 May, 2024;
originally announced May 2024.
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Current-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator
Authors:
Saül Vélez,
Sandra Ruiz-Gómez,
Jakob Schaab,
Elzbieta Gradauskaite,
Martin S. Wörnle,
Pol Welter,
Benjamin J. Jacot,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for develo** high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We tra…
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Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for develo** high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We track the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin-orbit torques and pinning determine the skyrmion dynamics in TmIG and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hop** motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling TmIG to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to a directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.
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Submitted 19 January, 2023;
originally announced January 2023.
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Defeating depolarizing fields with artificial flux closure in ultrathin ferroelectrics
Authors:
Elzbieta Gradauskaite,
Quintin N. Meier,
Natascha Gray,
Marco Campanini,
Thomas Moran,
Bryan D. Huey,
Marta D. Rossell,
Manfred Fiebig,
Morgan Trassin
Abstract:
Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here, we report the stabiliz…
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Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here, we report the stabilization of ultrathin out-of-plane ferroelectricity in oxide heterostructures through the design of an artificial flux-closure architecture. Inserting an in-plane polarized ferroelectric epitaxial buffer provides continuity of polarization at the interface, and despite its insulating nature we observe the emergence of polarization in our out-of-plane-polarized model ferroelectric BaTiO$_{3}$ from the very first unit cell. In BiFeO$_{3}$, the flux-closure approach stabilizes a conceptually novel 251$^{\circ}$ domain wall. Its unusual chirality is likely associated with the ferroelectric analog to the Dzyaloshinskii-Moriya interaction. We thus see that in an adaptively engineered geometry, the depolarizing-field-screening properties of an insulator can even surpass those of a metal and be a source of new functionalities. This should be a useful insight on the road towards the next generation of ferroelectric-based oxide electronics.
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Submitted 21 December, 2022;
originally announced December 2022.
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Combined electrostatic and strain engineering of BiFeO$_3$ thin films at the morphotropic phase boundary
Authors:
Johanna Nordlander,
Bastien F. Grosso,
Marta D. Rossell,
Aline Maillard,
Elzbieta Gradauskaite,
Nicola A. Spaldin,
Manfred Fiebig,
Morgan Trassin
Abstract:
Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the f…
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Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the ferroelectric phase evolution upon insertion in nanoscale heterostructures. Here, we explore the emergence of ferroelectric phases close to the morphotropic phase boundary in compressively strained BFO during thin-film growth using in-situ optical second harmonic generation. We find that the epitaxial films form at the growth temperature in the ideal T phase without critical thickness for the polarization. Signatures of T-like and R-like monoclinically distorted phases only appear upon sample cooling. We furthermore demonstrate a robustness of single-domain polarization in the high-temperature T phase during the growth of capacitor-like metal|ferroelectric|metal heterostructures. Here, a reduction in tetragonality of the T phase, rather than domain formation, lowers the electrostatic energy. At this lower tetragonality, density-functional calculations and scanning transmission electron microscopy point to the stabilization of a new metastable R-like monoclinic structure upon cooling the heterostructure down to room temperature. Our results thus show that the combination of strain and electrostatic phase stabilization in BFO heterostructures yields a prominent platform for exploring ferroelectric phases and realizing ultrathin ferroelectric devices.
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Submitted 25 October, 2022; v1 submitted 19 May, 2020;
originally announced May 2020.
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High-speed domain wall racetracks in a magnetic insulator
Authors:
Saül Vélez,
Jakob Schaab,
Martin S. Wörnle,
Marvin Müller,
Elzbieta Gradauskaite,
Pol Welter,
Cameron Gutgsell,
Corneliu Nistor,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the in…
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Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the internal structure of the domain walls in Tm3Fe5O12 (TmIG) and TmIG/Pt bilayers and demonstrate their efficient manipulation by spin-orbit torques with velocities of up to 400 m s$^{-1}$ and minimal current threshold for domain wall flow of 5 x 10$^{6}$ A cm$^{-2}$. Domain wall racetracks embedded in TmIG are defined by the deposition of Pt current lines, which allow us to control the domain propagation and magnetization switching in selected regions of an extended magnetic layer. Scanning nitrogen-vacancy magnetometry reveals that the domain walls of thin TmIG films are Néel walls with left-handed chirality, with the domain wall magnetization rotating towards an intermediate Néel-Bloch configuration upon deposition of Pt. These results indicate the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction in TmIG, which leads to novel possibilities to control the formation of chiral spin textures in magnetic insulators. Ultimately, domain wall racetracks provide an efficient scheme to pattern the magnetic landscape of TmIG in a fast and reversible way
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Submitted 14 February, 2019;
originally announced February 2019.
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PbTi1-xPdxO3: A New Room-temperature Magnetoelectric Multiferroic Device Material
Authors:
Elzbieta Gradauskaite,
Jonathan Gardner,
Rebecca M. Smith,
Finlay D. Morrison,
Stephen L. Lee,
Ram S. Katiyar,
James F. Scott
Abstract:
There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gall…
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There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFeO3). In the present work we report a comprehensive study of the perovskite PbTi1-xPdxO3 with 0 < x < 0.3. Our study includes dielectric, impedance and magnetization measurements, conductivity analysis and study of crystallographic phases present in the samples with special attention paid to minor phases, identified as PdO, PbPdO2, and Pd3Pb. The work is remarkable in two ways: Pd is difficult to substitute into ABO3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields). The new material, as a PZT derivative, is expected to have much stronger piezoelectric properties than BiFeO3.
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Submitted 7 June, 2017;
originally announced June 2017.
