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Beam test measurements of Low Gain Avalanche Detector single pads and arrays for the ATLAS High Granularity Timing Detector
Authors:
C. Allaire,
J. Benitez,
M. Bomben,
G. Calderini,
M. Carulla,
E. Cavallaro,
A. Falou,
D. Flores,
P. Freeman,
Z. Galloway,
E. L. Gkougkousis,
H. Grabas,
S. Grinstein,
B. Gruey,
S. Guindon,
A. M. Henriques Correia,
S. Hidalgo,
A. Kastanas,
C. Labitan,
D. Lacour,
J. Lange,
F. Lanni,
B. Lenzi,
Z. Luce,
N. Makovec
, et al. (19 additional authors not shown)
Abstract:
For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sen…
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For the high luminosity upgrade of the LHC at CERN, ATLAS is considering the addition of a High Granularity Timing Detector (HGTD) in front of the end cap and forward calorimeters at |z| = 3.5 m and covering the region 2.4 < |η| < 4 to help reducing the effect of pile-up. The chosen sensors are arrays of 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD sensors with a surface area of 1.3x1.3 mm2 and arrays with 2x2 pads with a surface area of 2x2 mm^2 or 3x3 mm^2 each and different implant doses of the p+ multiplication layer. They are obtained from data collected during a beam test campaign in Autumn 2016 with a pion beam of 120 GeV energy at the CERN SPS. In addition to several quantities measured inclusively for each pad, the gain, efficiency and time resolution have been estimated as a function of the position of the incident particle inside the pad by using a beam telescope with a position resolution of few μm. Different methods to measure the time resolution are compared, yielding consistent results. The sensors with a surface area of 1.3x1.3 mm^2 have a time resolution of about 40 ps for a gain of 20 and of about 27 ps for a gain of 50 and fulfill the HGTD requirements. Larger sensors have, as expected, a degraded time resolution. All sensors show very good efficiency and time resolution uniformity.
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Submitted 9 August, 2018; v1 submitted 2 April, 2018;
originally announced April 2018.
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Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
Authors:
N. Cartiglia,
A. Staiano,
V. Sola,
R. Arcidiacono,
R. Cirio,
F. Cenna,
M. Ferrero,
V. Monaco,
R. Mulargia,
M. Obertino,
F. Ravera,
R. Sacchi,
A. Bellora,
S. Durando,
M. Mandurrino,
N. Minafra,
V. Fadeyev,
P. Freeman,
Z. Galloway,
E. Gkougkousis,
H. Grabas,
B. Gruey,
C. A. Labitan,
R. Losakul,
Z. Luce
, et al. (18 additional authors not shown)
Abstract:
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th…
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In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
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Submitted 3 January, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
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Measurements of timing resolution of ultra-fast silicon detectors with the SAMPIC waveform digitizer
Authors:
Dominique Breton,
Victor De Cacqueray,
Éric Delagnes,
Hervé Grabas,
Jihane Maalmi,
Nicola Minafra,
Christophe Royon,
Matthias Saimpert
Abstract:
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to imp…
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The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to improve time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using pulses generated by a signal generator or by a silicon detector illuminated by a pulsed infrared laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4 ps with synthesized signals and 40 ps with silicon detector signals.
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Submitted 11 August, 2016; v1 submitted 8 April, 2016;
originally announced April 2016.
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A Brief Technical History of the Large-Area Picosecond Photodetector (LAPPD) Collaboration
Authors:
Bernhard W. Adams,
Klaus Attenkofer,
Mircea Bogdan,
Karen Byrum,
Andrey Elagin,
Jeffrey W. Elam,
Henry J. Frisch,
Jean-Francois Genat,
Herve Grabas,
Joseph Gregar,
Elaine Hahn,
Mary Heintz,
Zinetula Insepov,
Valentin Ivanov,
Sharon Jelinsky,
Slade Jokely,
Sun Wu Lee,
Anil. U. Mane,
Jason McPhate,
Michael J. Minot,
Pavel Murat,
Kurtis Nishimura,
Richard Northrop,
Razib Obaid,
Eric Oberla
, et al. (16 additional authors not shown)
Abstract:
The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\%$,…
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The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\%$, time resolution less than 50 psec for single photons and spatial resolution of 700~microns in both lateral dimensions. We describe the R\&D performed to develop large-area micro-channel plate glass substrates, resistive and secondary-emitting coatings, large-area bialkali photocathodes, and RF-capable hermetic packaging. In addition, the Collaboration developed the necessary electronics for large systems capable of precise timing, built up from a custom low-power 15-GigaSample/sec waveform sampling 6-channel integrated circuit and supported by a two-level modular data acquisition system based on Field-Programmable Gate Arrays for local control, data-sparcification, and triggering. We discuss the formation, organization, and technical successes and short-comings of the Collaboration. The Collaboration ended in December 2012 with a transition from R\&D to commercialization.
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Submitted 6 March, 2016;
originally announced March 2016.
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A 15 GSa/s, 1.5 GHz Bandwidth Waveform Digitizing ASIC
Authors:
E. Oberla,
J. -F. Genat,
H. Grabas,
H. Frisch,
K. Nishimura,
G. Varner
Abstract:
The PSEC4 custom integrated circuit was designed for the recording of fast waveforms for use in large-area time-of-flight detector systems. The ASIC has been fabricated using the IBM-8RF 0.13 micron CMOS process. On each of 6 analog channels, PSEC4 employs a switched capacitor array (SCA) 256 samples deep, a ramp-compare ADC with 10.5 bits of DC dynamic range, and a serial data readout with the ca…
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The PSEC4 custom integrated circuit was designed for the recording of fast waveforms for use in large-area time-of-flight detector systems. The ASIC has been fabricated using the IBM-8RF 0.13 micron CMOS process. On each of 6 analog channels, PSEC4 employs a switched capacitor array (SCA) 256 samples deep, a ramp-compare ADC with 10.5 bits of DC dynamic range, and a serial data readout with the capability of region-of-interest windowing to reduce dead time. The sampling rate can be adjusted between 4 and 15 Gigasamples/second [GSa/s] on all channels and is servo-controlled on-chip with a low-jitter delay-locked loop (DLL). The input signals are passively coupled on-chip with a -3 dB analog bandwidth of 1.5 GHz. The power consumption in quiescent sampling mode is less than 50 mW/chip; at a sustained trigger and readout rate of 50 kHz the chip draws 100 mW. After fixed-pattern pedestal subtraction, the uncorrected integral non-linearity is 0.15% over an 750 mV dynamic range. With a linearity correction, a full 1 V signal voltage range is available.The sampling timebase has a fixed-pattern non-linearity with an RMS of 13%, which can be corrected for precision waveform feature extraction and timing.
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Submitted 17 September, 2013;
originally announced September 2013.