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A simple KPFM-based approach for electrostatic-free topographic measurements: the case of MoS$_2$ on SiO$_2$
Authors:
Aloïs Arrighi,
Nathan Ullberg,
Vincent Derycke,
Benjamin Grévin
Abstract:
A simple implementation of Kelvin probe force microscopy is reported that enables recording topographic images in the absence of any component of the electrostatic force. Our approach is based on a close loop z-spectroscopy operated in data cube mode. Curves of the tip-sample distance as a function of time are recorded onto a 2D grid. A dedicated circuit holds the KPFM compensation bias and subseq…
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A simple implementation of Kelvin probe force microscopy is reported that enables recording topographic images in the absence of any component of the electrostatic force. Our approach is based on a close loop z-spectroscopy operated in data cube mode. Curves of the tip-sample distance as a function of time are recorded onto a 2D grid. A dedicated circuit holds the KPFM compensation bias and subsequently cut off the modulation voltage during well-defined time-windows within the spectroscopic acquisition. Topographic images are recalculated from the matrix of spectroscopic curves. This approach is applied to the case of transition metal dichalcogenides (TMD) monolayers grown by chemical vapour deposition on silicon oxide substrates. In addition, we check to what extent a proper stacking height estimation can also be performed by recording series of images for decreasing values of the bias modulation amplitude. The outputs of both approaches are shown to be fully consistent. The results exemplify how in the operating conditions of non-contact AFM under ultra-high vacuum, the stacking height values can dramatically be overestimated due to variations in the tip-surface capacitive gradient, even though the KPFM controller nullifies the potential difference. We show that the number of atomic layers of a TMD can be safely assessed, only if the KPFM measurement is performed with a modulated bias amplitude reduced at its strict minimum or, even better, without any modulated bias. Last, the spectroscopic data reveal that defects at the TMD/oxide interface can have a counterintuitive impact on the electrostatic landscape, resulting in an apparent decrease of the measured stacking height by conventional nc-AFM/KPFM compared to non-defective sample areas. Hence, electrostatic free z-imaging proves to be a promising tool to assess the existence of defects in atomically thin TMD layers grown on oxides
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Submitted 16 September, 2022;
originally announced September 2022.
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Hidden surface photovoltages revealed by pump probe KPFM
Authors:
Valentin Aubriet,
Kristell Courouble,
Olivier Bardagot,
Renaud Demadrille,
Lukas Borowik,
Benjamin Grévin
Abstract:
In this work, we use pump-probe Kelvin Probe Force Microscopy (pp-KPFM) to investigate light-induced surface potential dynamics in alumina-passivated crystalline silicon, and in an organic bulk heterojunction thin film based on the PTB7-PC71BM tandem. In both cases, we demonstrate that it is possible to identify and separate the contributions of two different kinds of photo-induced charge distribu…
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In this work, we use pump-probe Kelvin Probe Force Microscopy (pp-KPFM) to investigate light-induced surface potential dynamics in alumina-passivated crystalline silicon, and in an organic bulk heterojunction thin film based on the PTB7-PC71BM tandem. In both cases, we demonstrate that it is possible to identify and separate the contributions of two different kinds of photo-induced charge distributions that give rise to potential shifts with opposite polarities, each characterized by different dynamics. The data acquired on the passivated crystalline silicon are shown to be fully consistent with the band-bending at the silicon-oxide interface, and with electron trap** processes in acceptors states and in the passivation layer. The full sequence of events that follow the electron-hole generation can be observed on the pp-KPFM curves. Two dimensional dynamical maps of the organic blend photo-response are obtained by recording the pump-probe KPFM curves in data cube mode, and by implementing a specific batch processing protocol. Sample areas displaying an extra positive SPV component characterized by decay time-constants of a few tens of microseconds are thus revealed, and are tentatively attributed to specific interfaces formed between a polymer-enriched skin layer and recessed acceptor aggregates. Decay time constant images of the negative SPV component confirm that the acceptor clusters act as electron-trap** centres. Whatever the photovoltaic technology, our results exemplify how some of the SPV components may remain completely hidden to conventional SPV imaging by KPFM, with possible consequences in terms of photo-response misinterpretation. This work furthermore highlight the need of implementing time-resolved techniques that can provide a quantitative measurement of the time-resolved potential.
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Submitted 21 November, 2021;
originally announced November 2021.
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New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers
Authors:
Céline Vergnaud,
Minh-Tuan Dau,
Benjamin Grévin,
Christophe Licitra,
Alain Marty,
Hanako Okuno,
Matthieu Jamet
Abstract:
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate (…
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The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate ($<$0.015 nm/min) are necessary to obtain high quality WSe$_2$ films. The domain size can be larger than 1 $μ$m and the in-plane rotational misorientation less than $\pm$0.5$^{\circ}$. The WSe$_2$ monolayer is also robust against air exposure, can be easily transferred over 1 cm$^2$ on SiN/SiO$_2$ and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe$_2$ and mica crystals allows us to explain the formation of these misoriented grains and gives suggestion to remove them and further improve the crystalline quality of WSe$_2$.
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Submitted 17 October, 2019;
originally announced October 2019.
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The valley Nernst effect in WSe$_2$
Authors:
Minh-Tuan Dau,
Céline Vergnaud,
Alain Marty,
Cyrille Beigné,
Serge Gambarelli,
Vincent Maurel,
Timothée Journot,
Bérangère Hyot,
Thomas Guillet,
Benjamin Grévin,
Hanako Okuno,
Matthieu Jamet
Abstract:
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of…
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The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pum** technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value.
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Submitted 17 October, 2019;
originally announced October 2019.
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Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
Authors:
C. Vergnaud,
M. Gay,
C. Alvarez,
M. -T. Dau,
F. Pierre,
D. Jalabert,
C. Licitra,
A. Marty,
C. Beigné,
B. Grévin,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an impo…
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Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
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Submitted 7 June, 2019;
originally announced June 2019.
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Ripples and Charge Puddles in Graphene on a Metallic Substrate
Authors:
S. C. Martin,
S. Samaddar,
B. Sacépé,
A. Kimouche,
J. Coraux,
F. Fuchs,
B. Grévin,
H. Courtois,
C. B. Winkelmann
Abstract:
Graphene on a dielectric substrate exhibits spatial do** inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point. Here we show the coexistence and correlation of charge puddles and topographic ripples in graphene decoupled from the metallic substrate it was grown…
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Graphene on a dielectric substrate exhibits spatial do** inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point. Here we show the coexistence and correlation of charge puddles and topographic ripples in graphene decoupled from the metallic substrate it was grown on. The analysis of interferences of Dirac fermion-like electrons yields a linear dispersion relation, indicating that graphene on a metal can recover its intrinsic electronic properties.
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Submitted 1 July, 2014; v1 submitted 3 April, 2013;
originally announced April 2013.
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Scanning tunneling microscopy simulations of poly(3-dodecylthiophene) chains adsorbed on highly oriented pyrolytic graphite
Authors:
M. Dubois,
S. Latil,
L. Scifo,
B. Grevin,
A. Rubio
Abstract:
We report on a novel scheme to perform efficient simulations of Scanning Tunneling Microscopy (STM) of molecules weakly bonded to surfaces. Calculations are based on a tight binding (TB) technique including self-consistency for the molecule to predict STM imaging and spectroscopy. To palliate the lack of self-consistency in the tunneling current calculation, we performed first principles density…
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We report on a novel scheme to perform efficient simulations of Scanning Tunneling Microscopy (STM) of molecules weakly bonded to surfaces. Calculations are based on a tight binding (TB) technique including self-consistency for the molecule to predict STM imaging and spectroscopy. To palliate the lack of self-consistency in the tunneling current calculation, we performed first principles density-functional calculations to extract the geometrical and electronic properties of the system. In this way, we can include, in the TB scheme, the effects of structural relaxation upon adsorption on the electronic structure of the molecule. This approach is applied to the study of regioregular poly(3-dodecylthiophene) (P3DDT) polymer chains adsorbed on highly oriented pyrolytic graphite (HOPG). Results of spectroscopic calculations are discussed and compared with recently obtained experimental dat
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Submitted 23 January, 2006;
originally announced January 2006.
