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An elongated quantum dot as a distributed charge sensor
Authors:
S. M. Patomäki,
J. Williams,
F. Berritta,
C. Laine,
M. A. Fogarty,
R. C. C. Leon,
J. Jussot,
S. Kubicek,
A. Chatterjee,
B. Govoreanu,
F. Kuemmeth,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate…
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Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling.
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Submitted 4 January, 2023;
originally announced January 2023.
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Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Authors:
Arnout Beckers,
Jakob Michl,
Alexander Grill,
Ben Kaczer,
Marie Garcia Bardon,
Bertrand Parvais,
Bogdan Govoreanu,
Kristiaan De Greve,
Gaspard Hiblot,
Geert Hellings
Abstract:
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power…
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Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.
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Submitted 24 September, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
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Low charge noise quantum dots with industrial CMOS manufacturing
Authors:
Asser Elsayed,
Mohamed Shehata,
Clement Godfrin,
Stefan Kubicek,
Shana Massar,
Yann Canvel,
Julien Jussot,
George Simion,
Massimo Mongillo,
Danny Wan,
Bogdan Govoreanu,
Iuliana P. Radu,
Ruoyu Li,
Pol Van Dorpe,
Kristiaan De Greve
Abstract:
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and oper…
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Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $μ$eV/${\sqrt{Hz}}$ at 1 Hz and even below 0.1 $μ$eV/${\sqrt{Hz}}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.
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Submitted 13 December, 2022;
originally announced December 2022.
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Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Authors:
D. P. Lozano,
M. Mongillo,
X. Piao,
S. Couet,
D. Wan,
Y. Canvel,
A. M. Vadiraj,
Ts. Ivanov,
J. Verjauw,
R. Acharya,
J. Van Damme,
F. A. Mohiyaddin,
J. Jussot,
P. P. Gowda,
A. Pacco,
B. Raes,
J. Van de Vondel,
I. P. Radu,
B. Govoreanu,
J. Swerts,
A. Potočnik,
K. De Greve
Abstract:
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised…
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The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
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Submitted 30 November, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
Authors:
M. Mohamed El Kordy Shehata,
George Simion,
Ruoyu Li,
Fahd A. Mohiyaddin,
Danny Wan,
Massimo Mongillo,
Bogdan Govoreanu,
Iuliana Radu,
Kristiaan De Greve,
Pol Van Dorpe
Abstract:
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space i…
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The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.
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Submitted 22 August, 2023; v1 submitted 10 October, 2022;
originally announced October 2022.
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Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
Authors:
Rohith Acharya,
Steven Brebels,
Alexander Grill,
Jeroen Verjauw,
Tsvetan Ivanov,
Daniel Perez Lozano,
Danny Wan,
Jacques van Damme,
A. M. Vadiraj,
Massimo Mongillo,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu,
Kristiaan de Greve,
Georges Gielen,
Francky Catthoor,
Anton Potočnik
Abstract:
Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-…
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Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols.
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Submitted 26 September, 2022;
originally announced September 2022.
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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Authors:
J. Verjauw,
R. Acharya,
J. Van Damme,
Ts. Ivanov,
D. Perez Lozano,
F. A. Mohiyaddin,
D. Wan,
J. Jussot,
A. M. Vadiraj,
M. Mongillo,
M. Heyns,
I. Radu,
B. Govoreanu,
A. Potočnik
Abstract:
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li…
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As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures.
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Submitted 21 February, 2022;
originally announced February 2022.
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Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
Authors:
N. I. Dumoulin Stuyck,
R. Li,
C. Godfrin,
A. Elsayed,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
M. Shehata,
G. Simion,
Y. Canvel,
L. Goux,
M. Heyns,
B. Govoreanu,
I. P. Radu
Abstract:
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlap** polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO…
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Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlap** polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO$_2$ is proved by a 10K Hall mobility of $1.5 \cdot 10^4$ $cm^2$/Vs. Well-controlled sensors with low charge noise (3.6 $μ$eV/$\sqrt{\mathrm{Hz}}$ at 1 Hz) are used for charge sensing down to the last electron. We demonstrate excellent and reproducible interdot coupling control over nearly 2 decades (2-100 GHz). We show spin manipulation and single-shot spin readout, extracting a valley splitting energy of around 150 $μ$eV. These low-disorder, uniform qubit devices and 300mm fab integration pave the way for fast scale-up to large quantum processors.
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Submitted 24 August, 2021;
originally announced August 2021.
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Low dephasing and robust micromagnet designs for silicon spin qubits
Authors:
N. I. Dumoulin Stuyck,
F. A. Mohiyaddin,
R. Li,
M. Heyns,
B. Govoreanu,
I. P. Radu
Abstract:
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes q…
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Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and position relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to 3-orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors, and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.
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Submitted 24 August, 2021;
originally announced August 2021.
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High mobility SiMOSFETs fabricated in a full 300mm CMOS process
Authors:
Timothy N. Camenzind,
Asser Elsayed,
Fahd A. Mohiyaddin,
Ruoyu Li,
Stefan Kubicek,
Julien Jussot,
Pol Van Dorpe,
Bogdan Govoreanu,
Iuliana Radu,
Dominik M. Zumbühl
Abstract:
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide…
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The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
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Submitted 9 June, 2021;
originally announced June 2021.
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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Authors:
R. Li,
N. I. Dumoulin Stuyck,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
A. Elsayed,
M. Shehata,
G. Simion,
C. Godfrin,
Y. Canvel,
Ts. Ivanov,
L. Goux,
B. Govoreanu,
I. P. Radu
Abstract:
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are charact…
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We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
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Submitted 7 February, 2021;
originally announced February 2021.
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Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
Authors:
J. Verjauw,
A. Potočnik,
M. Mongillo,
R. Acharya,
F. Mohiyaddin,
G. Simion,
A. Pacco,
Ts. Ivanov,
D. Wan,
A. Vanleenhove,
L. Souriau,
J. Jussot,
A. Thiam,
J. Swerts,
X. Piao,
S. Couet,
M. Heyns,
B. Govoreanu,
I. Radu
Abstract:
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate…
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The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.
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Submitted 22 December, 2020; v1 submitted 19 December, 2020;
originally announced December 2020.
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Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
Authors:
Anton Potočnik,
Steven Brebels,
Jeroen Verjauw,
Rohith Acharya,
Alexander Grill,
Danny Wan,
Massimo Mongillo,
Ruoyu Li,
Tsvetan Ivanov,
Steven Van Winckel,
Fahd A. Mohiyaddin,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu
Abstract:
Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of l…
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Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers.
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Submitted 14 September, 2021; v1 submitted 23 November, 2020;
originally announced November 2020.
