Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films
Authors:
L. Govindaraj,
S. Arumugam,
R. Thiyagarajan,
Dinesh Kumar,
M. Kannan,
Dhrubha Das,
T. S. Suraj,
V. Sankaranarayanan,
K. Sethupathi,
G. Baskaran,
Raman Sankar,
M. S. Ramachandra Rao
Abstract:
Diamond is an excellent band insulator. However, boron (B) do** is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dop…
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Diamond is an excellent band insulator. However, boron (B) do** is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at do**s (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trap**, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD.
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Submitted 23 June, 2020;
originally announced June 2020.
Effect of hydrostatic pressure on ferromagnetism in two-dimensional CrI$_3$
Authors:
Suchanda Mondal,
Murugesan Kannan,
Moumita Das,
Linganan Govindaraj,
Ratnadwip Singha,
Biswarup Satpati,
Sonachalam Arumugam,
Prabhat Mandal
Abstract:
We have investigated the magnetic properties of highly anisotropic layered ferromagnetic semiconductor CrI$_3$ in presence of hydrostatic pressure ($P$). At ambient pressure, magnetization exhibits a clear anomaly below 212 K along with a thermal hysteresis over a wide temperature range (212-180 K), where a first-order structural transition is observed. CrI$_3$ undergoes a second-order ferromagnet…
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We have investigated the magnetic properties of highly anisotropic layered ferromagnetic semiconductor CrI$_3$ in presence of hydrostatic pressure ($P$). At ambient pressure, magnetization exhibits a clear anomaly below 212 K along with a thermal hysteresis over a wide temperature range (212-180 K), where a first-order structural transition is observed. CrI$_3$ undergoes a second-order ferromagnetic-paramagnetic phase transition with Curie temperature $T_C$=60.4 K. With application of pressure, the transition becomes sharper and $T_C$ is found to increase from 60.4 to 64.9 K as $P$ increases from 0 to 1.0 GPa. $T_C$ increases with $P$ in a sublinear fashion. The thermal hysteresis in magnetization and the increase of $T_C$ with pressure suggest that the spin and lattice degrees of freedom are coupled. The observed increase in $T_C$ has been explained on the basis of change in inter-layer coupling and Cr-I-Cr bond angle with pressure.
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Submitted 10 June, 2019; v1 submitted 3 January, 2019;
originally announced January 2019.
