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Strain-induced exciton decomposition and anisotropic lifetime modulation in a GaAs micromechanical resonator
Authors:
Ryuichi Ohta,
Hajime Okamoto,
Takehiko Tawara,
Hideki Gotoh,
Hiroshi Yamaguchi
Abstract:
We demonstrate mechanical modulations of the exciton lifetime by using vibrational strain of a gallium arsenide (GaAs) resonator. The strain-induced modulations have anisotropic dependences on the crystal orientation, which reveals the origin of these modulations to be the piezoelectric effect. Numerical analyses based on the tunneling model clarify that the mechanical strain modulates the interna…
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We demonstrate mechanical modulations of the exciton lifetime by using vibrational strain of a gallium arsenide (GaAs) resonator. The strain-induced modulations have anisotropic dependences on the crystal orientation, which reveals the origin of these modulations to be the piezoelectric effect. Numerical analyses based on the tunneling model clarify that the mechanical strain modulates the internal electric field and spatially separates the electrons and holes, leading to non-radiative exciton decomposition. This carrier separation also generates an optomechanical back-action force from the photon to the resonator. Therefore, these results indicate that the mechanical motion can be self-modulated by exciton decays, which enables one to control the thermal noise of the resonators and provides a photon-exciton-phonon interaction in solid-state systems.
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Submitted 16 January, 2019;
originally announced January 2019.
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Coherent coupling of dark and bright excitons with vibrational strain
Authors:
Ryuichi Ohta,
Hajime Okamoto,
Takehiko Tawara,
Hideki Gotoh,
Hiroshi Yamaguchi
Abstract:
In many physical systems, there are specific electronic states called dark state that are protected from the rapid radiative decay imposed by the system symmetry. Although their long-lived nature indicates their potential for quantum information and spintronic applications, their high stability comes at the expense of optical accessibility. Breaking the symmetry by using magnetic and electric fiel…
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In many physical systems, there are specific electronic states called dark state that are protected from the rapid radiative decay imposed by the system symmetry. Although their long-lived nature indicates their potential for quantum information and spintronic applications, their high stability comes at the expense of optical accessibility. Breaking the symmetry by using magnetic and electric fields has been employed to hybridize dark and bright states thus making them optically active, but high-frequency and on-chip operation remains to be developed. Here we demonstrate the strain-induced coherent coupling of dark and bright exciton states in a GaAs mechanical resonator. The in-plane uniaxial strain breaks the rotational symmetry of the crystal, allowing the dark states to be optically accessible without any external fields. Such dark-bright coupling is tailored by the local strain distribution, which enables the coherent spin operation in the gigahertz regime and opens the way to on-chip excitonic quantum memories and circuits.
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Submitted 30 November, 2017;
originally announced January 2018.
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Valley-antisymmetric potential in graphene under dynamical deformation
Authors:
Ken-ichi Sasaki,
Yasuhiro Tokura,
Hideki Gotoh
Abstract:
When graphene is deformed in a dynamical manner, a time-dependent potential is induced for the electrons. The potential is antisymmetric with respect to valleys, and some straightforward applications are found for Raman spectroscopy. We show that a valley-antisymmetric potential broadens Raman $D$ band but does not affect $2D$ band, which is already observed by recent experiments. The space deriva…
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When graphene is deformed in a dynamical manner, a time-dependent potential is induced for the electrons. The potential is antisymmetric with respect to valleys, and some straightforward applications are found for Raman spectroscopy. We show that a valley-antisymmetric potential broadens Raman $D$ band but does not affect $2D$ band, which is already observed by recent experiments. The space derivative of the valley antisymmetric potential gives a force field that accelerates intervalley phonons, while it corresponds to the longitudinal component of the previously discussed pseudoelectric field acting on the electrons. Effects of a pseudoelectric field on the electron is quite difficult to observe due to the valley-antisymmetric coupling constant, on the other hand, such obstacle is absent for intervalley phonons with $A_{1g}$ symmetry that constitute the $D$ and $2D$ bands.
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Submitted 17 July, 2014; v1 submitted 4 April, 2014;
originally announced April 2014.
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The Legacy of Hideki Yukawa, Sin-itiro Tomonaga, and Shoichi Sakata: Some Aspects from their Archives
Authors:
Michiji Konuma,
Masako Bando,
Haruyoshi Gotoh,
Hisao Hayakawa,
Kohji Hirata,
Kazuyuki Ito,
Kenji Ito,
Kazuyuki Kanaya,
Daisuke Konagaya,
Taichiro Kugo,
Chusei Namba,
Tadashi Nishitani,
Yoshinobu Takaiwa,
Masaharu Tanabashi,
Kio Tanaka,
Sho Tanaka,
Fumihiko Ukegawa,
Tadashi Yoshikawa
Abstract:
Hideki Yukawa, Sin-itiro Tomonaga and Shoichi Sakata pioneered nuclear and particle physics and left enduring legacies. Their friendly collaboration and severe competition laid the foundation to bring up the active postwar generation of nuclear and particle physicists in Japan. In this presentation we illustrate milestones of nuclear and particle physics in Japan from 1930's to mid-1940's which ha…
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Hideki Yukawa, Sin-itiro Tomonaga and Shoichi Sakata pioneered nuclear and particle physics and left enduring legacies. Their friendly collaboration and severe competition laid the foundation to bring up the active postwar generation of nuclear and particle physicists in Japan. In this presentation we illustrate milestones of nuclear and particle physics in Japan from 1930's to mid-1940's which have been clarified in Yukawa Hall Archival Library, Tomonaga Memorial Room and Sakata Memorial Archival Library.
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Submitted 29 August, 2013;
originally announced August 2013.
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Topological Raman Band in Carbon Nanohorn
Authors:
Ken-ichi Sasaki,
Yoshiaki Sekine,
Kouta Tateno,
Hideki Gotoh
Abstract:
Raman spectroscopy has been used in chemistry and physics to investigate the fundamental process involving light and phonons (quantum of lattice vibration). The carbon nanohorn introduces a new subject to Raman spectroscopy, namely topology. We show theoretically that a photo-excited carrier with a non-zero winding number activates a topological $D$ Raman band through the Aharonov-Bohm effect. The…
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Raman spectroscopy has been used in chemistry and physics to investigate the fundamental process involving light and phonons (quantum of lattice vibration). The carbon nanohorn introduces a new subject to Raman spectroscopy, namely topology. We show theoretically that a photo-excited carrier with a non-zero winding number activates a topological $D$ Raman band through the Aharonov-Bohm effect. The topology-induced $D$ Raman band can be distinguished from the ordinary $D$ Raman band for a graphene edge by its peak position.
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Submitted 17 April, 2013;
originally announced April 2013.
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Optical characteristics of single wavelength-tunable InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 um
Authors:
N. I. Cade,
H. Gotoh,
H. Kamada,
H. Nakano,
S. Anantathanasarn,
R. Noetzel
Abstract:
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperature-dependent measurements reveal…
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We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperature-dependent measurements reveal negligible optical-phonon induced broadening of the exciton line up to 50 K, and emission from the exciton state clearly persists above 70 K. Furthermore, we find no measurable polarized fine structure splitting of the exciton state within the experimental precision. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems.
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Submitted 31 March, 2006;
originally announced March 2006.
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Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um
Authors:
N. I. Cade,
H. Gotoh,
H. Kamada,
H. Nakano,
H. Okamoto
Abstract:
We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent me…
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We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent measurements reveal dot-charging effects due to differences in carrier diffusivity. We observe a pronounced linearly polarized splitting of the neutral exciton and biexciton lines (~250 ueV) resulting from asymmetry in the QD structure. This asymmetry also causes a mixing of the excited trion states which is manifested in the fine structure and polarization of the charged biexciton emission; from this data we obtain values for the ratio between the anisotropic and isotropic electron-hole exchange energies of (Delta1)/(Delta0)= 0.2--0.5. Magneto-PL spectroscopy has been used to investigate the diamagnetic response and Zeeman splitting of the various exciton complexes. We find a significant variation in g-factor between the exciton, the positive biexciton, and the negative biexciton; this is also attributed to anisotropy effects and the difference in lateral extent of the electron and hole wavefunctions.
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Submitted 7 October, 2005;
originally announced October 2005.
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Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition
Authors:
N. I. Cade,
H. Gotoh,
H. Kamada,
T. Tawara,
T. Sogawa,
H. Okamoto,
H. Nakano
Abstract:
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots…
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We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.
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Submitted 30 May, 2005;
originally announced May 2005.
