Showing 1–50 of 216 results for author: Gossard, A C

Excitation spectra of two correlated electrons in a quantum dot

Authors: T. Ihn, C. Ellenberger, K. Ensslin, Constantine Yannouleas, Uzi Landman, D. C. Driscoll, A. C. Gossard

Abstract: Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest singlet- and triplet states. These states can be reproduced in an exact diagonalization calculation of a parabolic dot with moderate in-plane anisotropy. The calcula… ▽ More Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest singlet- and triplet states. These states can be reproduced in an exact diagonalization calculation of a parabolic dot with moderate in-plane anisotropy. The calculated spectra are in reasonable quantitative agreement with the measurement, and suggest that correlations between the electrons play a significant role in this system. Comparison of the exact results with the restricted Hartree-Fock and the generalized Heitler-London approach shows that the latter is more appropriate for this system because it can account for the spatial correlation of the electron states. △ Less

Submitted 28 December, 2021; originally announced December 2021.

Comments: ICPS28 (Vienna 2006) conference paper announcing early experimental results in semiconductor quantum dots that were successfully interpreted as a signature (strong suppression of the singlet-triplet gap) of Wigner-molecule formation, in accordance with previous theoretical work and predictions; see Ref. [7] in this paper

Journal ref: AIP Conference Proceedings 893, 783 (2007)

Artificial coherent states of light by multi-photon interference in a single-photon stream

Authors: P. Steindl, H. Snijders, G. Westra, E. Hissink, K. Iakovlev, S. Polla, J. A. Frey, J. Norman, A. C. Gossard, J. E. Bowers, D. Bouwmeester, W. Löffler

Abstract: Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of… ▽ More Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of light with tunable photon statistics, including approximate weak coherent states. We demonstrate this experimentally using a true single-photon stream produced by a semiconductor quantum dot in an optical microcavity, and show that we can obtain light with $g^{(2)}(0)\rightarrow1$ in agreement with our theory, which can only be explained by quantum interference of at least 3 photons. The produced artificial light states are, however, much more complex than coherent states, containing quantum entanglement of photons, making them a resource for multi-photon entanglement. △ Less

Submitted 11 April, 2021; v1 submitted 29 October, 2020; originally announced October 2020.

Comments: 6 pages + supplemental material

Journal ref: Phys. Rev. Lett. 126, 143601 (2021)

Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots

Authors: Leon C. Camenzind, Simon Svab, Peter Stano, Liuqi Yu, Jeramy D. Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength w… ▽ More We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength which allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Because this implies a dependence of the spin splitting on the magnetic field direction, these findings are of significance for spin qubits in GaAs quantum dots. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 127, 057701 (2021)

Signature of Many-Body Localization of Phonons in Strongly Disordered Superlattices

Authors: Thanh Nguyen, Nina Andrejevic, Hoi Chun Po, Qichen Song, Yoichiro Tsurimaki, Nathan C. Drucker, Ahmet Alatas, Ercan E. Alp, Bogdan M. Leu, Alessandro Cunsolo, Yong Q. Cai, Lijun Wu, Joseph A. Garlow, Yimei Zhu, Hong Lu, Arthur C. Gossard, Alexander A. Puretzky, David B. Geohegan, Shengxi Huang, Mingda Li

Abstract: Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazi… ▽ More Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazing-incidence inelastic X-ray scattering, we observe a strong deviation of the phonon population from equilibrium in samples doped with ErAs nanodots at low temperature, signaling a departure from thermalization. This behavior occurs within finite phonon energy and wavevector windows, suggesting a localization-thermalization crossover. We support our observation by proposing a theoretical model for the effective phonon Hamiltonian in disordered superlattices, and showing that it can be mapped exactly to a disordered 1D Bose-Hubbard model with a known MBL phase. Our work provides momentum-resolved experimental evidence of phonon localization, extending the scope of MBL to disordered solid-state systems. △ Less

Submitted 14 September, 2021; v1 submitted 5 August, 2020; originally announced August 2020.

Journal ref: Nano Lett. 2021, 21, 17, 7419-7425

Interference dislocations in condensate of indirect excitons

Authors: J. R. Leonard, Lunhui Hu, A. A. High, A. T. Hammack, Congjun Wu, L. V. Butov, K. L. Campman, A. C. Gossard

Abstract: Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference p… ▽ More Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources. △ Less

Submitted 17 October, 2019; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 5+ pages, 4 figures

Tunable Antenna-Coupled Intersubband Terahertz (TACIT) Mixers: The Quantum Limit Without the Quantum Liquid

Authors: M. S. Sherwin, C. Cates, B. Serapiglia, Y. Dora, J. B. Williams, K. Maranowski, A. C. Gossard, W. R. McGrath

Abstract: At present, nearly quantum-limited heterodyne receivers for Terahertz (THz) frequencies require cooling to temperatures below 4K. We are working to build semiconductor-based "tunable antenna-coupled intersubband terahertz" (TACIT) heterodyne mixers for 1-5 THz. We predict that they can achieve single-sideband noise temperatures of a few hundred K with intermediate frequency (IF) bandwidth >10 GHz,… ▽ More At present, nearly quantum-limited heterodyne receivers for Terahertz (THz) frequencies require cooling to temperatures below 4K. We are working to build semiconductor-based "tunable antenna-coupled intersubband terahertz" (TACIT) heterodyne mixers for 1-5 THz. We predict that they can achieve single-sideband noise temperatures of a few hundred K with intermediate frequency (IF) bandwidth >10 GHz, while operating at lattice temperatures >20 K and requiring local oscillator (LO) power ~ 1 $μ$W. △ Less

Submitted 23 September, 2019; originally announced September 2019.

Comments: This paper was published in the Proceedings of the Far-IR, Submm, and mm Detector Technology Workshop, Monterey, CA (2002). The URL for the proceedings no longer exists, so this eprint is submitted here for public access. The eprint is identical to the version published in 2002. One correction is required: in Eq. (4): Gamma/(2*pi), not Gamma*(2*pi), is the HWHM of the intersubband transition

Journal ref: Proceedings of Far-IR, Submm, and mm Detector Technology Workshop, Monterey, CA (2002)

High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Authors: Songtao Liu, Xinru Wu, Daehwan Jung, Justin C. Norman, Mj Kennedy, Hon K. Tsang, Arthur C. Gossard, John E. Bowers

Abstract: Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked… ▽ More Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode-locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 - 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58 lines, with 80 lines within the 10 dB bandwidth). The integrated average relative intensity noise values of the whole spectrum and a single wavelength channel are - 152 dB/Hz and - 133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively. Utilizing 64 channels, an aggregate total transmission capacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquist four-level pulse amplitude modulation format. The demonstrated performance makes the laser a compelling on-chip WDM source for multi-terabit/s optical interconnects in future large-scale silicon EPICs. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Comments: 7 pages, 7 figures

Journal ref: Optica, Vol. 6, Issue 2, pp. 128-134 (2019)

Extended polarized semiclassical model for quantum-dot cavity QED and its application to single-photon sources

Authors: H. J. Snijders, D. N. L. Kok, M. F. van de Stolpe, J. A. Frey, J. Norman, A. C. Gossard, J. E. Bowers, M. P. van Exter, D. Bouwmeester, W. Löffler

Abstract: We present a simple extension of the semi-classical model for a two-level system in a cavity, in order to incorporate multiple polarized transitions, such as those appearing in neutral and charged quantum dots (QDs), and two nondegenerate linearly polarized cavity modes. We verify the model by exact quantum master equation calculations, and experimentally using a neutral QD in a polarization non-d… ▽ More We present a simple extension of the semi-classical model for a two-level system in a cavity, in order to incorporate multiple polarized transitions, such as those appearing in neutral and charged quantum dots (QDs), and two nondegenerate linearly polarized cavity modes. We verify the model by exact quantum master equation calculations, and experimentally using a neutral QD in a polarization non-degenerate micro-cavity, in both cases we observe excellent agreement. Finally, the usefulness of this approach is demonstrated by optimizing a single-photon source based on polarization postselection, where we find an increase in the brightness for optimal polarization conditions as predicted by the model. △ Less

Submitted 5 May, 2020; v1 submitted 26 November, 2018; originally announced November 2018.

Comments: 8 pages, for simple code see https://doi.org/10.5281/zenodo.3476660

Journal ref: Phys. Rev. A 101, 053811 (2020)

Electro-optic polarization tuning of microcavities with a single quantum dot

Authors: J. A. Frey, H. J. Snijders, J. Norman, A. C. Gossard, J. E. Bowers, W. Loffler, D. Bouwmeester

Abstract: We present an oxide aperture microcavity with embedded quantum dots that utilizes a three contact design to independently tune the quantum dot wavelength and birefringence of the cavity modes. A polarization splitting tuning of $\sim$5 GHz is observed. For typical microcavity polarization splittings, the method can be used to achieve perfect polarization degeneracy that is required for many polari… ▽ More We present an oxide aperture microcavity with embedded quantum dots that utilizes a three contact design to independently tune the quantum dot wavelength and birefringence of the cavity modes. A polarization splitting tuning of $\sim$5 GHz is observed. For typical microcavity polarization splittings, the method can be used to achieve perfect polarization degeneracy that is required for many polarization-based implementations of photonic quantum gates. The embedded quantum dot wavelength can be tuned into resonance with the cavity, independent of the polarization tuning. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields

Authors: Leon C. Camenzind, Liuqi Yu, Peter Stano, Jeramy Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the… ▽ More We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the microscopic quantum dot confinement potential landscape, and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement. △ Less

Submitted 31 March, 2018; originally announced April 2018.

Comments: 4 pages, 3 color figures, including supplementary on arXiv

Journal ref: Phys. Rev. Lett. 122, 207701 (2019)

Single photons and unconventional photon blockade in quantum dot cavity-QED

Authors: H. J. Snijders, J. A. Frey, J. Norman, H. Flayac, V. Savona, A. C. Gossard, J. E. Bowers, M. P. van Exter, D. Bouwmeester, W. Löffler

Abstract: We observe the unconventional photon blockade effect in quantum dot cavity QED, which, in contrast to conventional photon blockade, operates in the weak coupling regime. A single quantum dot transition is simultaneously coupled to two orthogonally polarized optical cavity modes, and by careful tuning of the input and output state of polarization, the unconventional photon blockade effect is observ… ▽ More We observe the unconventional photon blockade effect in quantum dot cavity QED, which, in contrast to conventional photon blockade, operates in the weak coupling regime. A single quantum dot transition is simultaneously coupled to two orthogonally polarized optical cavity modes, and by careful tuning of the input and output state of polarization, the unconventional photon blockade effect is observed. We find a minimum second-order correlation $g^{(2)}(0)\approx0.37$ which corresponds to $g^{(2)}(0)\approx0.005$ when corrected for detector jitter, and observe the expected polarization dependency and photon bunching and anti-bunching very close-by in parameter space, which indicates the abrupt change from phase to amplitude squeezing. △ Less

Submitted 29 March, 2018; originally announced March 2018.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 121, 043601 (2018)

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Authors: Leon C. Camenzind, Liuqi Yu, Peter Stano, Jeramy Zimmerman, Arthur C. Gossard, Daniel Loss, Dominik M. Zumbühl

Abstract: Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields $B$, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteris… ▽ More Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields $B$, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence $T_1 \propto B^{-5}$ and pronounced $B$-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to $T_1 \propto B^{-3}$. We establish these predictions experimentally, by measuring $T_1$ over an unprecedented range of magnetic fields -- made possible by lower temperature -- and report a maximum $T_1 = 57\pm15$ s at the lowest fields, setting a new record for the electron spin lifetime in a nanostructure. △ Less

Submitted 4 November, 2017; originally announced November 2017.

Comments: 7 pages, 4 (color) figures

Journal ref: Nature Communications 9, 3454 (Aug 27, 2018)

Pancharatnam-Berry phase in condensate of indirect excitons

Authors: J. R. Leonard, A. A. High, A. T. Hammack, M. M. Fogler, L. V. Butov, K. L. Campman, A. C. Gossard

Abstract: We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry ph… ▽ More We report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs coupled quantum well structure. The Pancharatnam-Berry phase leads to phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate. The effect of the Pancharatnam-Berry phase on the IX phase pattern is described in terms of an associated momentum. △ Less

Submitted 2 September, 2017; originally announced September 2017.

Comments: 6 pages, 5 figures + 2 pages supplemental material, 3 supplemental figures

Journal ref: Nature Communications 9, 2158 (2018)

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

Authors: X. G. Croot, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, D. J. Reilly

Abstract: We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and… ▽ More We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 11, 064027 (2019)

Dynamical birefringence: Electron-hole recollisions as probes of Berry curvature

Authors: Hunter B. Banks, Qile Wu, Darren C. Valovcin, Shawn Mack, Arthur C. Gossard, Loren Pfeiffer, Ren-Bao Liu, Mark S. Sherwin

Abstract: The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately aff… ▽ More The direct measurement of Berry phases is still a great challenge in condensed matter systems. The bottleneck has been the ability to adiabatically drive an electron coherently across a large portion of the Brillouin zone in a solid where the scattering is strong and complicated. We break through this bottleneck and show that high-order sideband generation (HSG) in semiconductors is intimately affected by Berry phases. Electron-hole recollisions and HSG occur when a near-band gap laser beam excites a semiconductor that is driven by sufficiently strong terahertz (THz)-frequency electric fields. We carried out experimental and theoretical studies of HSG from three GaAs/AlGaAs quantum wells. The observed HSG spectra contain sidebands up to the 90th order, to our knowledge the highest-order optical nonlinearity observed in solids. The highest-order sidebands are associated with electron-hole pairs driven coherently across roughly 10% of the Brillouin zone around the Γpoint. The principal experimental claim is a dynamical birefringence: the sidebands, when the order is high enough (> 20), are usually stronger when the exciting near-infrared (NIR) and the THz electric fields are polarized perpendicular than parallel; the sideband intensities depend on the angles between the THz field and the crystal axes in samples with sufficiently weak quenched disorder; and the sidebands exhibit significant ellipticity that increases with increasing sideband order, despite nearly linear excitation and driving fields. We explain dynamical birefringence by generalizing the three-step model for high order harmonic generation. The hole accumulates Berry phases due to variation of its internal state as the quasi-momentum changes under the THz field. Dynamical birefringence arises from quantum interference between time-reversed pairs of electron-hole recollision pathways. △ Less

Submitted 12 October, 2017; v1 submitted 26 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. X 7, 041042 (2017)

Spatially and time-resolved imaging of transport of indirect excitons in high magnetic fields

Authors: C. J. Dorow, M. W. Hasling, E. V. Calman, L. V. Butov, J. Wilkes, K. L. Campman, A. C. Gossard

Abstract: We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kinetics of magnetoexciton transport with time-resolved optical imaging of exciton photoluminescence. We performed spatially, spectrally, and time-resolve… ▽ More We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kinetics of magnetoexciton transport with time-resolved optical imaging of exciton photoluminescence. We performed spatially, spectrally, and time-resolved optical imaging of transport of indirect excitons in high magnetic fields. We observed that increasing magnetic field slows down magnetoexciton transport. The time-resolved measurements of the magnetoexciton transport distance allowed for an experimental estimation of the magnetoexciton diffusion coefficient. An enhancement of the exciton photoluminescence energy at the laser excitation spot was found to anti-correlate with the exciton transport distance. A theoretical model of indirect magnetoexciton transport is presented and is in agreement with the experimental data. △ Less

Submitted 25 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 95, 235308 (2017)

A fiber coupled cavity QED source of identical single photons

Authors: H. J. Snijders, J. A. Frey, J. Norman, V. P. Post, A. C. Gossard, J. E. Bowers, M. P. van Exter, W. Löffler, D. Bouwmeester

Abstract: A high-fidelity source of identical single photons is essential for numerous quantum technologies such as quantum repeaters and optical quantum information processing. Hallmarks thereof are a near-unity single-photon purity, near-unity indistinguishability of consecutively emitted photons, and high brightness through a near-unity number of photons per time bin. In order to embed such sources in qu… ▽ More A high-fidelity source of identical single photons is essential for numerous quantum technologies such as quantum repeaters and optical quantum information processing. Hallmarks thereof are a near-unity single-photon purity, near-unity indistinguishability of consecutively emitted photons, and high brightness through a near-unity number of photons per time bin. In order to embed such sources in quantum networks, optical fiber integration is essential but complicated by cryogenic compatability and noise. Here we demonstrate a resonantly pumped, quantum dot (QD) based, transmission operated, single-mode fiber coupled single photon source with a purity of 97%, indistinguishability of 90%, and a brightness of 17%. This is achieved by deploying a unique micropillar cavity design in a closed-cycle cryostat, which is operated using a through-fiber cross-polarization technique to remove the pump laser light from the resonantly scattered single photons. These results pave the way for fully fiber integrated photonic quantum networks, as our technology is equally applicable for cavity-QED based photonic quantum gates. △ Less

Submitted 16 May, 2017; originally announced May 2017.

Comments: 10 pages, 10 figures

Journal ref: Phys. Rev. Applied 9, 031002 (2018)

Transport of Indirect Excitons in High Magnetic Fields

Authors: Y. Y. Kuznetsova, C. J. Dorow, E. V. Calman, L. V. Butov, J. Wilkes, K. L. Campman, A. C. Gossard

Abstract: We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons formed from electrons and holes at zeroth Landau levels (0e - 0h indirect magnetoexcitons) travel over large distances and form a ring emission patter… ▽ More We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons formed from electrons and holes at zeroth Landau levels (0e - 0h indirect magnetoexcitons) travel over large distances and form a ring emission pattern around the excitation spot. In contrast, the spatial profiles of 1e - 1h and 2e - 2h indirect magnetoexciton emission closely follow the laser excitation profile. The 0e - 0h indirect magnetoexciton transport distance reduces with increasing magnetic field. These effects are explained in terms of magnetoexciton energy relaxation and effective mass enhancement. △ Less

Submitted 10 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 125304 (2017)

Indirect excitons in a potential energy landscape created by a perforated electrode

Authors: C. J. Dorow, Y. Y. Kuznetsova, J. R. Leonard, M. K. Chu, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp incr… ▽ More We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions. △ Less

Submitted 8 February, 2016; originally announced February 2016.

Journal ref: Appl. Phys. Lett. 108, 073502 (2016)

Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons

Authors: P. Andreakou, A. V. Mikhailov, S. Cronenberger, D. Scalbert, A. Nalitov, A. V. Kavokin, M. Nawrocki, L. V. Butov, A. C. Gossard, M. Vladimirova

Abstract: We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decre… ▽ More We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 93, 115410 (2016)

Measurement of exciton correlations using electrostatic lattices

Authors: M. Remeika, J. R. Leonard, C. J. Dorow, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical e… ▽ More We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved. △ Less

Submitted 5 April, 2016; v1 submitted 18 August, 2015; originally announced August 2015.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 92, 115311 (2015)

Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots

Authors: Jun Yoneda, Tomohiro Otsuka, Tatsuki Takakura, Michel Pioro-Ladrière, Roland Brunner, Hong Lu, Takashi Nakajima, Toshiaki Obata, Akito Noiri, Christopher J. Palmstrøm, Arthur C. Gossard, Seigo Tarucha

Abstract: Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a desig… ▽ More Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Journal ref: Appl. Phys. Express 8, 084401 (2015)

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

Authors: D. E. F. Biesinger, C. P. Scheller, B. Braunecker, J. Zimmerman, A. C. Gossard, D. M. Zumbühl

Abstract: We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoi… ▽ More We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time. △ Less

Submitted 12 May, 2015; originally announced May 2015.

Comments: 4 pages, 5 figures (color)

Journal ref: Phys. Rev. Lett. 115, 106804 (2015)

Fluctuation and Commensurability Effect of Exciton Density Wave

Authors: Sen Yang, L. V. Butov, B. D. Simons, K. L. Campman, A. C. Gossard

Abstract: At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We… ▽ More At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We found that fluctuations are strongly suppressed when the instability wavelength is commensurate with defect separation along the exciton density wave. The commensurability effect is also found in numerical simulations within the model describing the exciton density wave in terms of an instability due to stimulated processes. △ Less

Submitted 7 February, 2015; originally announced February 2015.

Journal ref: Phys. Rev. B 91, 245302 (2015)

Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins

Authors: J. Yoneda, T. Otsuka, T. Nakajima, T. Takakura, T. Obata, M. Pioro-Ladrière, H. Lu, C. Palmstrøm, A. C. Gossard, S. Tarucha

Abstract: We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition… ▽ More We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 23 pages, 6 figures

Electric-field driven insulating to conducting transition in a mesoscopic quantum dot lattice

Authors: Neal E. Staley, Nirat Ray, Marc A. Kastner, Micah P. Hanson, Arthur C. Gossard

Abstract: We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an insulating state at low bias voltages to a conducting state at high bias voltages. The insulating state shows simply activated temperature dependence, with strongly gat… ▽ More We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an insulating state at low bias voltages to a conducting state at high bias voltages. The insulating state shows simply activated temperature dependence, with strongly gate voltage dependent activation energy. At low temperatures the transition between the insulating and conducting states becomes very abrupt and shows strong hysteresis. The high-bias behavior suggests underdamped transport through a periodic washboard potential resulting from collective motion. △ Less

Submitted 12 November, 2014; originally announced November 2014.

Comments: 4 pages, 4 figures

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Authors: G. B. Serapiglia, M. Hanson, M. F. Doty, P. Focardi, W. R. McGrath, A. C. Gossard, M. S. Sherwin

Abstract: Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz. Applications to medicine, communications, security and other fields are emerging. However, map** the coldest parts of the universe has been the largest driver for de… ▽ More Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz. Applications to medicine, communications, security and other fields are emerging. However, map** the coldest parts of the universe has been the largest driver for develo** THz detectors. The result is a family of exquisitely-sensitive detectors requiring sub-4K temperatures. For earthbound THz science and technology, sensitivity remains important but many applications require high speed and operating temperatures. Room-temperature Schottky diodes enable some of these applications. Here we demonstrate a new type of detector in which THz radiation excites a collective oscillation of ~25,000 electrons between two gates in a microscopic four terminal transistor. The energy dissipates into other modes of the electron gas, warming it and changing the source-drain resistance. The detector shows amplifier-limited rise times near 1 ns and has detected THz laser radiation at temperatures up to 120K. The frequency of the collective oscillation tunes with small gate voltages. The first-generation tunable antenna-coupled intersubband Terahertz (TACIT) detectors tune between 1.5 and 2 THz with voltages <2V. △ Less

Submitted 18 October, 2014; originally announced October 2014.

Comments: This paper was submitted to Nature in 2005, was not accepted, and was not submitted to other journals subsequently. We feel it is important for this work to be available to the scientific community, and are now posting it as it was submitted in 2005. The state of the art in terahertz detectors has advanced significantly since 2005. This progress is not represented in the text or references

Stirring Potential for Indirect Excitons

Authors: M. W. Hasling, Y. Y. Kuznetsova, P. Andreakou, J. R. Leonard, E. V. Calman, C. Dorow, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency. We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency. △ Less

Submitted 2 October, 2014; originally announced October 2014.

Cryogenic Control Architecture for Large-Scale Quantum Computing

Authors: J. M. Hornibrook, J. I. Colless, I. D. Conway Lamb, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, D. J. Reilly

Abstract: Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experim… ▽ More Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 3, 024010, (2015)

Control of InGaAs facets using metal modulation epitaxy (MME)

Authors: Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti, Greg J. Burek, Byungha Shin, Eunji Kim, Paul C. McIntyre, Arthur C. Gossard, Mark J. W. Rodwell

Abstract: Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but metal modulated epitaxy (MME) produced smooth and gap-free "rising tide" (001) growth filling up to the mask… ▽ More Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but metal modulated epitaxy (MME) produced smooth and gap-free "rising tide" (001) growth filling up to the mask. The resulting self-aligned FETs were dominated by FET channel resistance rather than source-drain access resistance. Higher As fluxes led first to conformal growth, then pronounced {111} facets slo** up away from the mask. △ Less

Submitted 16 August, 2014; originally announced August 2014.

Comments: 18 pages, 7 figures

Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells

Authors: P. Andreakou, S. Cronenberger, D. Scalbert, A. Nalitov, N. A. Gippius, A. V. Kavokin, M. Nawrocki, J. R. Leonard, L. V. Butov, K. L. Campman, A. C. Gossard, M. Vladimirova

Abstract: Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons… ▽ More Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude. △ Less

Submitted 3 October, 2014; v1 submitted 21 July, 2014; originally announced July 2014.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 91, 125437 (2015)

Silver-Epoxy Microwave Filters and Thermalizers for Millikelvin Experiments

Authors: C. P. Scheller, S. Heizmann, K. Bedner, D. Giss, M. Meschke, D. M. Zumbühl, J. D. Zimmerman, A. C. Gossard

Abstract: We present Silver-epoxy filters combining excellent microwave attenuation with efficient wire thermalization, suitable for low temperature quantum transport experiments. Upon minimizing parasitic capacitances, the attenuation reaches >100 dB above ~150 MHz and - when capacitors are added - already above ~30 MHz. We measure the device electron temperature with a GaAs quantum dot and demonstrate exc… ▽ More We present Silver-epoxy filters combining excellent microwave attenuation with efficient wire thermalization, suitable for low temperature quantum transport experiments. Upon minimizing parasitic capacitances, the attenuation reaches >100 dB above ~150 MHz and - when capacitors are added - already above ~30 MHz. We measure the device electron temperature with a GaAs quantum dot and demonstrate excellent filter performance. Upon improving the sample holder and adding a second filtering stage, we obtain electron temperatures as low as 7.5 +/- 0.2 mK in metallic Coulomb blockade thermometers. △ Less

Submitted 24 March, 2014; originally announced March 2014.

Comments: 4 pages, 4 figures (color), plus supplementary information 3 pages, 1 figure (color) as ancillary arXiv pdf (SOM.pdf)

Journal ref: Appl. Phys. Lett. 104, 211106 (2014)

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

Authors: D. Maradan, L. Casparis, T. -M. Liu, D. E. F. Biesinger, C. P. Scheller, D. M. Zumbühl, J. Zimmerman, A. C. Gossard

Abstract: We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperatur… ▽ More We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature. △ Less

Submitted 10 January, 2014; originally announced January 2014.

Comments: 8 pages, 3 (color) figures

Journal ref: J. Low Temp. Phys. 175, 784 (2014)

Frequency Multiplexing for Readout of Spin Qubits

Authors: J. M. Hornibrook, J. I. Colless, A. C. Mahoney, X. G. Croot, S. Blanvillain, H. Lu, A. C. Gossard, D. J. Reilly

Abstract: We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum… ▽ More We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime, and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels is discussed. △ Less

Submitted 18 December, 2013; originally announced December 2013.

Journal ref: Applied Physics Letters 104, 103108, (2014)

Optically Controlled Excitonic Transistor

Authors: P. Andreakou, S. V. Poltavtsev, J. R. Leonard, E. V. Calman, M. Remeika, Y. Y. Kuznetsova, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical exciton… ▽ More Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Journal ref: Applied Physics Letters 104, 091101 (2014)

Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Authors: Hunter Banks, Ben Zaks, Fan Yang, Shawn Mack, Arthur C. Gossard, Renbao Liu, Mark S. Sherwin

Abstract: Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kine… ▽ More Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$. △ Less

Submitted 2 January, 2014; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 111, 267402 (2013)

Coherence and Screening in Multi-Electron Spin Qubits

Authors: A. P. Higginbotham, F. Kuemmeth, M. P. Hanson, A. C. Gossard, C. M. Marcus

Abstract: The performance of multi-electron spin qubits is examined by comparing exchange oscillations in coupled single-electron and multi-electron quantum dots in the same device. Fast (> 1 GHz) exchange oscillations with a quality factor Q > 15 are found for the multi-electron case, compared to Q ~ 2 for the single-electron case, the latter consistent with previous experiments. A model of dephasing that… ▽ More The performance of multi-electron spin qubits is examined by comparing exchange oscillations in coupled single-electron and multi-electron quantum dots in the same device. Fast (> 1 GHz) exchange oscillations with a quality factor Q > 15 are found for the multi-electron case, compared to Q ~ 2 for the single-electron case, the latter consistent with previous experiments. A model of dephasing that includes voltage and hyperfine noise is developed that is in good agreement with both single- and multi-electron data, though in both cases additional exchange-independent dephasing is needed to obtain quantitative agreement across a broad parameter range. △ Less

Submitted 19 June, 2013; v1 submitted 12 June, 2013; originally announced June 2013.

Comments: Supplemental Material here: https://dl.dropboxusercontent.com/u/1742676/Higg_Supplement.pdf

Report number: NBI QDEV 2013

Journal ref: Phys. Rev. Lett. 112, 026801 (2014)

Stimulated Phonon Emission in a Driven Double Quantum Dot

Authors: J. I. Colless, X. G. Croot, T. M. Stace, A. C. Doherty, S. D. Barrett, H. Lu, A. C. Gossard, D. J. Reilly

Abstract: The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential… ▽ More The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry. △ Less

Submitted 25 May, 2013; originally announced May 2013.

Comments: Send to: [email protected]

Journal ref: Nature communications 5, 3716 (2014)

Arrayed Continuous-wave THz Photomixers

Authors: S. T. Bauerschmidt, S. Malzer, G. H. Döhler, H. Lu, A. C. Gossard, S. Preu

Abstract: We present both chip-scale and free space coherent arrays of continuous-wave THz photomixers. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. The constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of NxN while reducing the beam widt… ▽ More We present both chip-scale and free space coherent arrays of continuous-wave THz photomixers. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. The constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of NxN while reducing the beam width by ~1/N, below the diffraction limit of a single source. Such array architectures strongly improve the THz power distribution for stand-off spectroscopy and imaging systems while providing a huge bandwidth at the same time. We demonstrate this by beam profiles generated by a free space 2x2 and a 4x1 array for a transmission distance of 4.2 meters. Spectra between 70 GHz and 1.1 THz have been recorded with these arrays. △ Less

Submitted 21 May, 2013; originally announced May 2013.

Journal ref: Optics Letters, Vol. 38, Issue 18, pp. 3673-3676 (2013)

Pattern Formation in the Exciton Inner Ring

Authors: M. Remeika, A. T. Hammack, S. Poltavtsev, L. V. Butov, J. Wilkes, A. L. Ivanov, K. L. Campman, M. Hanson, A. C. Gossard

Abstract: We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the in… ▽ More We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization. △ Less

Submitted 18 April, 2013; originally announced April 2013.

Comments: 9 pages, 12 figures

Journal ref: Phys. Rev. B 88, 125307 (2013)

The Resonant Exchange Qubit

Authors: J. Medford, J. Beil, J. M. Taylor, E. I. Rashba, H. Lu, A. C. Gossard, C. M. Marcus

Abstract: We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We demonstrate two-axis control at a detuning sweet-spot, where leakage due to hyperfine coupling is suppressed by the large exchange gap. A π/2-gate time of 2.5 ns… ▽ More We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We demonstrate two-axis control at a detuning sweet-spot, where leakage due to hyperfine coupling is suppressed by the large exchange gap. A π/2-gate time of 2.5 ns and a coherence time of 19 μs, using multi-pulse echo, are also demonstrated. Model calculations that include effects of hyperfine noise are in excellent quantitative agreement with experiment. △ Less

Submitted 12 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

Report number: NBI QDEV 2013

Journal ref: Phys. Rev. Lett. 111, 050501 (2013)

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

Authors: S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. C. Gossard, H. B. Weber

Abstract: A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonst… ▽ More A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector was as large as 65 $\pm$ 3 dB/$\sqrt{Hz}$, enabling applications in a large variety of experiments and setups, also including table-top systems. △ Less

Submitted 19 March, 2013; originally announced March 2013.

Comments: 8 pages, 4 figures

Journal ref: Optics Express, Vol. 21, Issue 15, pp. 17941-17950 (2013)

Spin currents in a coherent exciton gas

Authors: A. A. High, A. T. Hammack, J. R. Leonard, Sen Yang, L. V. Butov, T. Ostatnicky, M. Vladimirova, A. V. Kavokin, T. C. H. Liew, K. L. Campman, A. C. Gossard

Abstract: Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion. Spin currents and spin textures are observed in a coherent gas of indirect excitons. Applied magnetic fields bend the spin current trajectories and transform patterns of linear polarization from helical to spiral and patterns of circular polarization from four-leaf to bell-like-with-inversion. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Comments: 5 pages text, 3 figures + 12 pages supplemental information, 3 movies

Journal ref: Phys. Rev. Lett. 110, 246403 (2013)

Self-assembled ErSb nanostructures of tunable shape and orientation: growth and plasmonic properties

Authors: Hong Lu, Daniel G. Ouellette, Sascha Preu, Justin D. Watts, Ben Zaks, Peter G. Burke, Mark S. Sherwin, Arthur C. Gossard

Abstract: Self-assembled, semimetallic ErSb single crystal nanostructures, grown by molecular beam epitaxy, are embedded within a semiconductor GaSb matrix. Formation, evolution and orientation of a variety of nanostructures, including spherical nanoparticles, elongated nanorods, octagonal shaped nanowires oriented along the surface normal and nanowires oriented in the growth plane, are controlled simply by… ▽ More Self-assembled, semimetallic ErSb single crystal nanostructures, grown by molecular beam epitaxy, are embedded within a semiconductor GaSb matrix. Formation, evolution and orientation of a variety of nanostructures, including spherical nanoparticles, elongated nanorods, octagonal shaped nanowires oriented along the surface normal and nanowires oriented in the growth plane, are controlled simply by the Er fraction. The plasmonic properties of the semimetal/semiconductor composites are characterized and quantified by three polarization-resolved spectroscopy techniques, spanning more than three orders of magnitude in frequency from 100 GHz up to 300 THz. The effect of the size, shape and orientation of the nanostructures is characterized by polarization-sensitive response and modeled by a Maxwell-Garnett effective medium theory. △ Less

Submitted 12 February, 2013; originally announced February 2013.

Self-Consistent Measurement and State Tomography of an Exchange-Only Spin Qubit

Authors: J. Medford, J. Beil, J. M. Taylor, S. D. Bartlett, A. C. Doherty, E. I. Rashba, D. P. DiVincenzo, H. Lu, A. C. Gossard, C. M. Marcus

Abstract: We report initialization, complete electrical control, and single-shot readout of an exchange-only spin qubit. Full control via the exchange interaction is fast, yielding a demonstrated 75 qubit rotations in under 2 ns. Measurement and state tomography are performed using a maximum-likelihood estimator method, allowing decoherence, leakage out of the qubit state space, and measurement fidelity to… ▽ More We report initialization, complete electrical control, and single-shot readout of an exchange-only spin qubit. Full control via the exchange interaction is fast, yielding a demonstrated 75 qubit rotations in under 2 ns. Measurement and state tomography are performed using a maximum-likelihood estimator method, allowing decoherence, leakage out of the qubit state space, and measurement fidelity to be quantified. The methods developed here are generally applicable to systems with state leakage, noisy measurements, and non-orthogonal control axes. △ Less

Submitted 7 February, 2013; originally announced February 2013.

Comments: contains Supplementary Information

Report number: NBI QDEV 2013

Journal ref: Nature Nanotechnology 8, 654 (2013)

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors

Authors: J. I. Colless, A. C. Mahoney, J. M. Hornibrook, A. C. Doherty, D. J. Reilly, H. Lu, A. C. Gossard

Abstract: We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersi… ▽ More We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Journal ref: Physical Review Letters 110 (4), 046805, (2013)

Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses

Authors: Hugo Ribeiro, Guido Burkard, J. R. Petta, H. Lu, A. C. Gossard

Abstract: We study finite-time Landau-Zener transitions at a singlet-triplet level crossing in a GaAs double quantum dot, both experimentally and theoretically. Sweeps across the anticrossing in the high driving speed limit result in oscillations with a small visibility. Here we demonstrate how to increase the oscillation visibility while kee** sweep times shorter than T2* using a tailored pulse with a de… ▽ More We study finite-time Landau-Zener transitions at a singlet-triplet level crossing in a GaAs double quantum dot, both experimentally and theoretically. Sweeps across the anticrossing in the high driving speed limit result in oscillations with a small visibility. Here we demonstrate how to increase the oscillation visibility while kee** sweep times shorter than T2* using a tailored pulse with a detuning dependent level velocity. Our results show an improvement of a factor ~2.9 for the oscillation visibility. In particular, we were able to obtain a visibility of ~0.5 for Stückelberg oscillations, which demonstrates the creation of an equally weighted superposition of the qubit states. △ Less

Submitted 2 March, 2013; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: Related papers at http://pettagroup.princeton.edu

Journal ref: Phys. Rev. Lett. 110, 086804 (2013)

Landau-Zener-Stuckelberg Interferometry of a Single Electron Charge Qubit

Authors: J. Stehlik, Y. Dovzhenko, J. R. Petta, J. R. Johansson, F. Nori, H. Lu, A. C. Gossard

Abstract: We perform Landau-Zener-Stuckelberg interferometry on a single electron GaAs charge qubit by repeatedly driving the system through an avoided crossing. We observe coherent destruction of tunneling, where periodic driving with specific amplitudes inhibits current flow. We probe the quantum dot occupation using a charge sensor, observing oscillations in the qubit population resulting from the microw… ▽ More We perform Landau-Zener-Stuckelberg interferometry on a single electron GaAs charge qubit by repeatedly driving the system through an avoided crossing. We observe coherent destruction of tunneling, where periodic driving with specific amplitudes inhibits current flow. We probe the quantum dot occupation using a charge sensor, observing oscillations in the qubit population resulting from the microwave driving. At a frequency of 9 GHz we observe excitation processes driven by the absorption of up to 17 photons. Simulations of the qubit occupancy are in good agreement with the experimental data. △ Less

Submitted 17 September, 2012; v1 submitted 28 May, 2012; originally announced May 2012.

Comments: Related papers at http://pettagroup.princeton.edu

Journal ref: Phys. Rev. B (RC) 86, 121303 (2012)

Suppressing On-Chip EM Crosstalk for Spin Qubit Devices

Authors: S. Blanvillain, J. I. Colless, D. J. Reilly, H. Lu, A. C. Gossard

Abstract: We report the development and performance of on-chip interconnects designed to suppress electromagnetic (EM) crosstalk in spin qubit device architectures with the large number of gate electrodes needed for multi- qubit operation. Our design improves the performance of typical device interconnects via the use of minia- turised ohmic contacts and interspersed ground guards. Low temperature measureme… ▽ More We report the development and performance of on-chip interconnects designed to suppress electromagnetic (EM) crosstalk in spin qubit device architectures with the large number of gate electrodes needed for multi- qubit operation. Our design improves the performance of typical device interconnects via the use of minia- turised ohmic contacts and interspersed ground guards. Low temperature measurements and numerical simulation confirm that control and readout signal crosstalk can be suppressed to levels of order 1%, from dc to 1 GHz. △ Less

Submitted 17 May, 2012; originally announced May 2012.

Journal ref: Journal of Applied Physics 112 (6), 064315, (2012)

Cross-Sectional Scanning Tunneling Microscopy and Spectroscopy of Semimetallic ErAs Nanostructures Embedded in GaAs

Authors: Jason K. Kawasaki, Rainer Timm, Trevor E. Buehl, Edvin Lundgren, Anders Mikkelsen, Arthur C. Gossard, Chris J. Palmstrøm

Abstract: The growth and atomic/electronic structure of molecular beam epitaxy (MBE)-grown ErAs nanoparticles and nanorods embedded within a GaAs matrix are examined for the first time via cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (XSTS). Cross sections enable the interrogation of the internal structure and are well suited for studying embedded nanostructures. The early stages of… ▽ More The growth and atomic/electronic structure of molecular beam epitaxy (MBE)-grown ErAs nanoparticles and nanorods embedded within a GaAs matrix are examined for the first time via cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (XSTS). Cross sections enable the interrogation of the internal structure and are well suited for studying embedded nanostructures. The early stages of embedded ErAs nanostructure growth are examined via these techniques and compared with previous cross sectional TEM work. Tunneling spectroscopy I(V) for both ErAs nanoparticles and nanorods was also performed, demonstrating that both nanostructures are semimetallic. △ Less

Submitted 12 April, 2012; originally announced April 2012.

Comments: 18 pages, 5 figures

Journal ref: J. Vac. Sci. Technol. B 29, 03C104 (2011)