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Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: an ab initio study
Authors:
Madhava Krishna Prasad,
Oras A. Al-Ani,
Jonathan P. Goss,
Jonathan D. Mar
Abstract:
Using density functional theory (DFT), we study charge transfer between hexagonal boron nitride (h-BN) point defects and graphene in h-BN/graphene heterostructures for a range of intrinsic defects -- nitrogen vacancy, boron vacancy, nitrogen antisite and boron antisite. We show that traditional methods that calculate charge transfer by spatial discrimination of charge to different atoms suffer fro…
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Using density functional theory (DFT), we study charge transfer between hexagonal boron nitride (h-BN) point defects and graphene in h-BN/graphene heterostructures for a range of intrinsic defects -- nitrogen vacancy, boron vacancy, nitrogen antisite and boron antisite. We show that traditional methods that calculate charge transfer by spatial discrimination of charge to different atoms suffer from the misallocation of charge and introduce an alternative method that relies on the integration of the density of states. We also show that DFT calculations of charge transfer have cell size dependencies due to a change in the density of states in the vicinity of the defect levels. Our results indicate that the nitrogen and boron anitsites do not participate in charge transfer, whereas the nitrogen and boron vacancies experience the transfer of a whole electron. Additionally, we show that a change in the geometry of a defect corresponds to a change in the charge state of the defect. The results of our study will be invaluable for a wide variety of device applications that involve charge transfer between h-BN defects and graphene in h-BN/graphene heterostructures, while our methodology can be feasibly extended to a wide range of point defects and heterostructures.
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Submitted 11 January, 2023;
originally announced January 2023.
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The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface
Authors:
B. P. Reed,
M. E. Bathen,
J. W. R. Ash,
C. J. Meara,
A. A. Zakharov,
J. P. Goss,
J. W. Wells,
D. A. Evans,
S. P. Cooil
Abstract:
The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory calculations. The process is examined starting at the C(111)-(2x1) surface reconstruction that occurs following detachment of the surface adatoms at 92…
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The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory calculations. The process is examined starting at the C(111)-(2x1) surface reconstruction that occurs following detachment of the surface adatoms at 920 °C, and continues through to the liberation of the reconstructed surface atoms into a free-standing monolayer of epitaxial graphene at temperatures above 1000 °C. Our results show that the C(111)-(2x1) surface is metallic as it has electronic states that intersect the Fermi-level. This is in strong agreement with a symmetrically π-bonded chain model and should contribute to resolving the controversies that exist in the literature surrounding the electronic nature of this surface. The graphene formed at higher temperatures exists above a newly formed C(111)-(2\times1) surface and appears to have little substrate interaction as the Dirac-point is observed at the Fermi-level. Finally, we demonstrate that it is possible to hydrogen terminate the underlying diamond surface by means of plasma processing without removing the graphene layer, forming a graphene-semiconductor interface. This could have particular relevance for do** the graphene formed on the diamond (111)surface via tuneable substrate interactions as a result of changing the terminating species at the diamond-graphene interface by plasma processing.
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Submitted 21 February, 2022; v1 submitted 18 February, 2022;
originally announced February 2022.
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Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
Authors:
B G Breeze,
C J Meara,
X X Wu,
C P Michaels,
R Gupta,
P L Diggle,
M W Dale,
B L Cann,
T Ardon,
U F S D'Haenens-Johansson,
I Friel,
M J Rayson,
P R Briddon,
J P Goss,
M E Newton,
B L Green
Abstract:
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to…
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We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.
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Submitted 5 February, 2020;
originally announced February 2020.
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Extended point defects in crystalline materials: Ge and Si
Authors:
Nick E. B. Cowern,
Sergei Simdyankin,
Chihak Ahn,
Nick S. Bennett,
Jonathan P. Goss,
Jean-Michel Hartmann,
Ardechir Pakfar,
Silke Hamm,
Jérôme Valentin,
Enrico Napolitani,
Davide De Salvador,
Elena Bruno,
Salvatore Mirabella
Abstract:
B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Com…
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B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids.
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Submitted 12 March, 2013; v1 submitted 10 October, 2012;
originally announced October 2012.
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Mechanisms of do** graphene
Authors:
H. Pinto,
R. Jones,
J. P. Goss,
P. R. Briddon
Abstract:
We distinguish three mechanisms of do** graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel do** mechanism is exhibited…
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We distinguish three mechanisms of do** graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel do** mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical do** is effected by redox reactions and can result in p-do** by humid atmospheres and n-do** by NH3 and toluene.
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Submitted 2 March, 2010;
originally announced March 2010.
