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Temperature-dependent spin-resolved electronic structure of EuO thin films
Authors:
Tristan Heider,
Timm Gerber,
Okan Köksal,
Markus Eschbach,
Ewa Młyńczak,
Patrick Lömker,
Pika Gospodaric,
Mathias Gehlmann,
Moritz Plötzing,
Rossitza Pentcheva,
Lukasz Plucinski,
Claus M. Schneider,
Martina Müller
Abstract:
The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperat…
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The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperature-dependent spin-ARPES data directly demonstrates the exchange splitting in O $2p$ and its vanishing at the Curie temperature. Our calculations with a Hubbard $U$ term reveal a complex nature of the local exchange splitting on the oxygen site and in conduction bands. We discuss the mechanisms of the indirect exchange in the O 2p levels by analyzing orbital-resolved band characters in ferromagnetic and antiferromagnetic phases. The directional effects due to spin-orbit coupling are predicted theoretically to be significant in particular in the Eu 4f band manifold. The analysis of the shape of spin-resolved spectra in the Eu $4f$ spectral region reveals signatures of hybridization with O $2p$, in agreement with the theoretical predictions. We also analyze spectral changes in the spin-integrated spectra throughout the Curie temperature and demonstrate they derive from both the magnetic phase transition and effects due to sample aging, unavoidable for this highly reactive material.
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Submitted 3 September, 2022; v1 submitted 3 September, 2018;
originally announced September 2018.
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Kink far below the Fermi level reveals new electron-magnon scattering channel in Fe
Authors:
E. Młyńczak,
M. C. T. D. Müller,
P. Gospodarič,
T. Heider,
I. Aguilera,
G. Bihlmayer,
M. Gehlmann,
M. Jugovac,
G. Zamborlini,
C. Tusche,
S. Suga,
V. Feyer,
L. Plucinski,
C. Friedrich,
S. Blügel,
C. M. Schneider
Abstract:
Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to man…
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Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to many-body calculations carried out with a newly developed first-principles method, we show that a kink in the electronic band dispersion of a ferromagnetic material can occur at much deeper binding energies than expected (E_b=1.5 eV). We demonstrate that the observed spectral signature reflects the formation of a many-body state that includes a photohole bound to a coherent superposition of renormalized spin-flip excitations. The existence of such a many-body state sheds new light on the physics of the electron-magnon interaction which is essential in fields such as spintronics and Fe-based superconductivity.
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Submitted 13 May, 2019; v1 submitted 8 August, 2018;
originally announced August 2018.
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Localized segregation of gold in ultra-thin Fe films on Au(001)
Authors:
Pika Gospodaric,
Ewa Mlynczak,
Markus Eschbach,
Mathias Gehlmann,
Giovanni Zamborlini,
Vitaly Feyer,
Lukasz Plucinski,
Claus M. Schneider
Abstract:
The growth of up to 10 monolayer-thick Fe films on a Au(001) surface was investigated during deposition at room temperature and during annealing using low-energy electron diffraction and x-ray photoemission spectroscopy as well as locally with low-energy electron microscopy and photoemission electron microscopy. The growth proceeds with a submonolayer of Au segregating to the surface of Fe, which…
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The growth of up to 10 monolayer-thick Fe films on a Au(001) surface was investigated during deposition at room temperature and during annealing using low-energy electron diffraction and x-ray photoemission spectroscopy as well as locally with low-energy electron microscopy and photoemission electron microscopy. The growth proceeds with a submonolayer of Au segregating to the surface of Fe, which is in agreement with previous studies. Annealing was found to be critical for the presence of Au on the Fe surface. Our findings show that Au segregation proceeds by the formation of cracks in the Fe film, starting at the annealing temperature of 190 °C, through which Au diffuses towards the surface. We explain the localized Au segregation with a shadowing effect due to the oblique deposition geometry. As a result, an Fe film with significantly improved roughness, but covered with a Au overlayer, is obtained. This study shows the necessity to employ spatially-resolved techniques to fully understand the growth modes of the layered epitaxial systems.
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Submitted 15 February, 2018; v1 submitted 18 May, 2017;
originally announced May 2017.
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Direct observation of the band gap transition in atomically thin ReS$_2$
Authors:
Mathias Gehlmann,
Irene Aguilera,
Gustav Bihlmayer,
Slavomír Nemšák,
Philipp Nagler,
Pika Gospodarič,
Giovanni Zamborlini,
Markus Eschbach,
Vitaliy Feyer,
Florian Kronast,
Ewa Młyńczak,
Tobias Korn,
Lukasz Plucinski,
Christian Schüller,
Stefan Blügel,
Claus M. Schneider
Abstract:
ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic…
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ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures.
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Submitted 14 February, 2017;
originally announced February 2017.
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Fermi surface manipulation by external magnetic field demonstrated for a prototypical ferromagnet
Authors:
E. Młyńczak,
M. Eschbach,
S. Borek,
J. Minár,
J. Braun,
I. Aguilera,
G. Bihlmayer,
S. Döring,
M. Gehlmann,
P. Gospodarič,
S. Suga,
L. Plucinski,
S. Blügel,
H. Ebert,
C. M. Schneider
Abstract:
We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the or…
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We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the order of $Δ$E = 100 meV and $Δ\text {k} = 0.1\,\textÅ^{-1}$. We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state, rather than caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spin-orbit interaction even for elements as light as 3d ferromagnets.
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Submitted 24 June, 2016;
originally announced June 2016.
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$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator
Authors:
Markus Eschbach,
Martin Lanius,
Chengwang Niu,
Ewa Młyńczak,
Pika Gospodarič,
Jens Kellner,
Peter Schüffelgen,
Mathias Gehlmann,
Sven Döring,
Elmar Neumann,
Martina Luysberg,
Gregor Mussler,
Lukasz Plucinski,
Markus Morgenstern,
Detlev Grützmacher,
Gustav Bihlmayer,
Stefan Blügel,
Claus M. Schneider
Abstract:
A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t…
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A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory.
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Submitted 29 April, 2016;
originally announced April 2016.
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Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals
Authors:
Mathias Gehlmann,
Gustav Bihlmayer,
Irene Aguilera,
Ewa Mlynczak,
Markus Eschbach,
Sven Döring,
Pika Gospodaric,
Stefan Cramm,
Beata Kardynal,
Lukasz Plucinski,
Stefan Blügel,
Claus M. Schneider
Abstract:
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS…
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Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS$_2$ bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES) we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method we find that these valence band states at the $\overline{\text{K}}$ point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS$_2$, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS$_2$ can be accessed without thinning it down to the monolayer limit.
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Submitted 13 October, 2015;
originally announced October 2015.
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Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures
Authors:
Markus Eschbach,
Ewa Mlynczak,
Jens Kellner,
Jörn Kampmeier,
Martin Lanius,
Elmar Neumann,
Christian Weyrich,
Mathias Gehlmann,
Pika Gospodaric,
Sven Döring,
Gregor Mussler,
Nataliya Demarina,
Martina Luysberg,
Gustav Bihlmayer,
Thomas Schäpers,
Lukasz Plucinski,
Stefan Blügel,
Markus Morgenstern,
Claus M. Schneider,
Detlev Grützmacher
Abstract:
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct…
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3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.
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Submitted 9 October, 2015;
originally announced October 2015.
