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Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
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Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Enhanced Imaging of Electronic Hot Spots Using Quantum Squeezed Light
Authors:
Haechan An,
Ali Najjar Amiri,
Dominic P. Goronzy,
David A. Garcia Wetten,
Michael J. Bedzyk,
Ali Shakouri,
Mark C. Hersam,
Mahdi Hosseini
Abstract:
Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise li…
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Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise limit of classical approaches. We obtain a far-field temperature sensing accuracy of 42 mK after 50 ms of averaging and show that a $256\times256$ pixel image can be constructed with such sensitivity in 10 minutes. We can further obtain single-shot temperature sensing of 1.6 K after only 10 $\mathrm{μs}$ of averaging enabling dynamical study of heat dissipation. Not only do the quantum images provide accurate spatio-temporal information about heat distribution, but the measure of quantum correlation provides additional information, inaccessible by classical techniques, that can lead to a better understanding of the dynamics. We apply the technique to both Al and Nb microwires and discuss the applications of the technique in studying electron dynamics at low temperatures.
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Submitted 22 March, 2024;
originally announced March 2024.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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Characterization of Nb films for superconducting qubits using phase boundary measurements
Authors:
Kevin M. Ryan,
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
David A. Garcia Wetter,
Matthew J Reagor,
Mark Field,
Cameron J Kopas,
Jayss Marshall,
Michael J. Bedzyk,
Mark C. Hersam,
Venkat Chandrasekhar
Abstract:
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits.…
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Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature $T_c$ with an applied external magnetic field $H$ (of the phase boundary $T_c - H$) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary.
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Submitted 8 August, 2022; v1 submitted 26 July, 2022;
originally announced July 2022.
