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Electronic Structure of Manganese Phthalocyanine Modified via Potassium Intercalation: a Comprehensive Experimental Study
Authors:
Francisc Haidu,
Ovidiu D. Gordan,
Dietrich R. T. Zahn,
Lars Smykalla,
Michael Hietschold,
Boris V. Senkovskiy,
Benjamin Mahns,
Martin Knupfer
Abstract:
Potassium (K) intercalated manganese phthalocyanine (MnPc) reveals vast changes of its electronic states close to the Fermi level. However, theoretical studies are controversial regarding the electronic configuration. Here, MnPc doped with K was studied by ultraviolet, X-ray, and inverse photoemission, as well as near edge X-ray absorption fine structure spectroscopy. Upon K intercalation the Ferm…
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Potassium (K) intercalated manganese phthalocyanine (MnPc) reveals vast changes of its electronic states close to the Fermi level. However, theoretical studies are controversial regarding the electronic configuration. Here, MnPc doped with K was studied by ultraviolet, X-ray, and inverse photoemission, as well as near edge X-ray absorption fine structure spectroscopy. Upon K intercalation the Fermi level shifts toward the lowest unoccupied molecular orbital filling it up with donated electrons with the appearance of an additional feature in the energy region of the occupied states. The electronic bands are pinned 0.5 eV above and 0.4 eV below the Fermi level. The branching ratio of the Mn L3 and L2 edges indicate an increase of the spin state. Moreover, the evolution of the Mn L and N K edges reveals strong hybridization between Mn 3d and N 2p states of MnPc and sheds light on the electron occupation in the ground and n-doped configurations.
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Submitted 12 February, 2017;
originally announced February 2017.
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2D vibrational properties of epitaxial silicene on Ag(111) probed by in situ Raman Spectroscopy
Authors:
Dmytro Solonenko,
Ovidiu D. Gordan,
Guy Le Lay,
Dietrich R. T. Zahn,
Patrick Vogt
Abstract:
The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational charact…
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The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using \textit{in situ} Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about $300^{\circ}C$, whereupon a 2D-to-3D phase transition takes place.
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Submitted 5 May, 2016;
originally announced May 2016.
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Carbon p Electron Ferromagnetism in Silicon Carbide
Authors:
Y. Wang,
Y. Liu,
G. Wang,
W. Anwand,
C. Jenkins,
E. Arenholz,
F. Munnik,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
X. Chen,
S. Gemming,
M. Helm,
S. Zhou
Abstract:
Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupli…
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Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.
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Submitted 2 March, 2015;
originally announced March 2015.
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A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
Authors:
M. Khalid,
Kun Gao,
E. Weschke,
R. Huebner,
C. Baehtz,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The brig…
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The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hop** conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn do**. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
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Submitted 15 January, 2015;
originally announced January 2015.
