Showing 1–50 of 93 results for author: Gorbachev, R

Tunnel junctions based on interfacial 2D ferroelectrics

Authors: Yunze Gao, Astrid Weston, Vladimir Enaldiev, Eli Castanon, Wendong Wang, James E. Nunn, Amy Carl, Hugo De Latour, Xiao Li, Alex Summerfield, Andrey Kretinin, Nicholas Clark, Neil Wilson, Vladimir I. Falko, Roman Gorbachev

Abstract: Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switc… ▽ More Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain map** and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 3 figures

One-dimensional proximity superconductivity in the quantum Hall regime

Authors: Julien Barrier, Minsoo Kim, Roshan Krishna Kumar, Na Xin, P. Kumaravadivel, Lee Hague, E. Nguyen, A. I. Berdyugin, Christian Moulsdale, V. V. Enaldiev, J. R. Prance, F. H. L. Koppens, R. V. Gorbachev, K. Watanabe, T. Taniguchi, L. I. Glazman, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim

Abstract: Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applicati… ▽ More Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration. △ Less

Submitted 25 April, 2024; v1 submitted 22 February, 2024; originally announced February 2024.

Comments: 24 pages, 14 figures

Journal ref: Nature 628, 741-745 (2024)

Benchmarking the Full-Order Model Optimization Based Imitation in the Humanoid Robot Reinforcement Learning Walk

Authors: Ekaterina Chaikovskaya, Inna Minashina, Vladimir Litvinenko, Egor Davydenko, Dmitry Makarov, Yulia Danik, Roman Gorbachev

Abstract: When a gait of a bipedal robot is developed using deep reinforcement learning, reference trajectories may or may not be used. Each approach has its advantages and disadvantages, and the choice of method is up to the control developer. This paper investigates the effect of reference trajectories on locomotion learning and the resulting gaits. We implemented three gaits of a full-order anthropomorph… ▽ More When a gait of a bipedal robot is developed using deep reinforcement learning, reference trajectories may or may not be used. Each approach has its advantages and disadvantages, and the choice of method is up to the control developer. This paper investigates the effect of reference trajectories on locomotion learning and the resulting gaits. We implemented three gaits of a full-order anthropomorphic robot model with different reward imitation ratios, provided sim-to-sim control policy transfer, and compared the gaits in terms of robustness and energy efficiency. In addition, we conducted a qualitative analysis of the gaits by interviewing people, since our task was to create an appealing and natural gait for a humanoid robot. According to the results of the experiments, the most successful approach was the one in which the average value of rewards for imitation and adherence to command velocity per episode remained balanced throughout the training. The gait obtained with this method retains naturalness (median of 3.6 according to the user study) compared to the gait trained with imitation only (median of 4.0), while remaining robust close to the gait trained without reference trajectories. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: in Proc. IEEE Int. Conf. on Advanced Robotics (IEEE ICAR 2023). Copyright 20XX IEEE. Personal use of this material is permitted

Ultra-clean assembly of van der Waals heterostructures

Authors: Wendong Wang, Nicholas Clark, Matthew Hamer, Amy Carl, Endre Tovari, Sam Sullivan-Allsop, Evan Tillotson, Yunze Gao, Hugo de Latour, Francisco Selles, James Howarth, Eli G. Castanon, Mingwei Zhou, Haoyu Bai, Xiao Li, Astrid Weston, Kenji Watanabe, Takashi Taniguchi, Cecilia Mattevi, Thomas H. Bointon, Paul V. Wiper, Andrew J. Strudwick, Leonid A. Ponomarenko, Andrey Kretinin, Sarah J. Haigh , et al. (2 additional authors not shown)

Abstract: Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we… ▽ More Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Comments: 23 pages, 4 figures

Journal ref: Nature Electronics, 2023

Thermopower in hBN/graphene/hBN superlattices

Authors: Victor H. Guarochico-Moreira, Christopher R. Anderson, Vladimir Fal'ko, Irina V. Grigorieva, Endre Tóvári, Matthew Hamer, Roman Gorbachev, Song Liu, James H. Edgar, Alessandro Principi, Andrey V. Kretinin, Ivan J. Vera-Marun

Abstract: Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is align… ▽ More Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moiré superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moiré lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures. △ Less

Submitted 14 June, 2023; originally announced June 2023.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 108, 115418 (2023)

Water Induced Ferroelectric Switching: The Crucial Role of Collective Dynamics

Authors: Muhammad Awais Aslam, Igor Stankovic, Gennadiy Murastov, Amy Carl, Zehao Song, Kenji Watanabe, Takashi Taniguchi, Alois Lugstein, Christian Teichert, Roman Gorbachev, Raul David Rodriguez, Aleksandar Matkovic

Abstract: The interaction mechanisms of water with nanoscale geometries remain poorly understood. This study focuses on behaviour of water clusters under varying external electric fields with a particular focus on molecular ferroelectric devices. We employ a two-fold approach, combining experiments with large-scale molecular dynamics simulations on graphene nanoribbon field effect transistors. We show that… ▽ More The interaction mechanisms of water with nanoscale geometries remain poorly understood. This study focuses on behaviour of water clusters under varying external electric fields with a particular focus on molecular ferroelectric devices. We employ a two-fold approach, combining experiments with large-scale molecular dynamics simulations on graphene nanoribbon field effect transistors. We show that bilayer graphene nanoribbons provide stable anchoring of water clusters on the oxygenated edges, resulting in a ferroelectric effect. A molecular dynamics model is then used to investigate water cluster behaviour under varying external electric fields. Finally, we show that these nanoribbons exhibit significant and persistent remanent fields that can be employed in ferroelectric heterostructures and neuromorphic circuits. △ Less

Submitted 19 April, 2023; originally announced April 2023.

ARPES signatures of few-layer twistronic graphenes

Authors: J. E. Nunn, A. McEllistrim, A. Weston, A. Garcia-Ruiz, M. D. Watson, M. Mucha-Kruczynski, C. Cacho, R. Gorbachev, V. I. Fal'ko, N. R. Wilson

Abstract: Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the… ▽ More Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the twist-dependent ($1^\circ < θ< 8^\circ$) electronic band structure of few-layer graphenes, including twisted bilayer, monolayer-on-bilayer, and double-bilayer graphene (tDBG). Direct comparison is made between experiment and theory, using a hybrid $\textbf{k}\cdot\textbf{p}$ model for interlayer coupling and implementing photon-energy-dependent phase shifts for photo-electrons from consecutive layers to simulate ARPES spectra. Quantitative agreement between experiment and theory is found across twist angles, stacking geometries, and back-gate voltages, validating the models and revealing displacement field induced gap openings in twisted graphenes. However, for tDBG at $θ=1.5\pm0.2^\circ$, close to the predicted magic-angle of $θ=1.3^\circ$, a flat band is found near the Fermi-level with measured bandwidth of $E_w = 31\pm5$ meV. Analysis of the gap between the flat band and the next valence band shows significant deviations between experiment ($Δ_h=46\pm5$meV) and the theoretical model ($Δ_h=5$meV), indicative of the importance of lattice relaxation in this regime. △ Less

Submitted 4 April, 2023; originally announced April 2023.

Journal ref: Nano Letters 2023, 23, 11, 5201-5208

Map** quantum Hall edge states in graphene by scanning tunneling microscopy

Authors: T. Johnsen, C. Schattauer, S. Samaddar, A. Weston, M. Hamer, K. Watanabe, T. Taniguchi, R. Gorbachev, F. Libisch, M. Morgenstern

Abstract: Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. The graphene sample features a gate-tunable lateral interface between are… ▽ More Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. The graphene sample features a gate-tunable lateral interface between areas of different filling factor. We compare the results with detailed tight-binding calculations quantitatively accounting for the perturbation by the tip-induced quantum dot. We find that the edge state pattern is mapped with little perturbation by adequate choice of gate voltage. We observe extended compressible regions, the antinodal structure of edge states and their meandering along the lateral interface. △ Less

Submitted 6 April, 2023; v1 submitted 4 October, 2022; originally announced October 2022.

Comments: 23 pages, 23 figures

Journal ref: Phys. Rev. B 107, 115426 (2023) (editors suggestion)

Tracking single atoms in a liquid environment

Authors: Nicholas Clark, Daniel J. Kelly, Mingwei Zhou, Yi-Chao Zou, Chang Woo Myung, David G. Hopkinson, Christoph Schran, Angelos Michaelides, Roman Gorbachev, Sarah J. Haigh

Abstract: The chemical behaviour of single metal atoms largely depends on the local coordination environment, including interactions with the substrate and with the surrounding gas or liquid. However, the key instrumentation for studying such systems at the atomic scale generally requires high vacuum conditions, limiting the degree to which the aforementioned environmental parameters can be investigated. He… ▽ More The chemical behaviour of single metal atoms largely depends on the local coordination environment, including interactions with the substrate and with the surrounding gas or liquid. However, the key instrumentation for studying such systems at the atomic scale generally requires high vacuum conditions, limiting the degree to which the aforementioned environmental parameters can be investigated. Here we develop a new platform for transmission electron microscopy investigation of single metal atoms in liquids and study the dynamic behaviour of individual platinum atoms on the surface of a single layer MoS2 crystal in water. To achieve the record single atom resolution, we introduce a double liquid cell based on a 2D material heterostructure, which allows us to submerge an atomically thin membrane with liquid on both sides while maintaining the total specimen thickness of only ~ 70 nm. By comparison with an identical specimen imaged under high vacuum conditions, we reveal drastic differences in the single atom resting sites and atomic hop** behaviour, demonstrating that in situ imaging conditions are essential to gain complete understanding of the chemical activity of individual atoms. These findings pave the way for in situ liquid imaging of chemical processes with single atom precision. △ Less

Submitted 10 May, 2022; v1 submitted 9 March, 2022; originally announced March 2022.

Comments: Fixed Captions for figures 1 and 2 (did not appear in previous submission)

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Authors: Astrid Weston, Eli G Castanon, Vladimir Enaldiev, Fabio Ferreira, Shubhadeep Bhattacharjee, Shuigang Xu, Hector Corte-Leon, Zefei Wu, Nickolas Clark, Alex Summerfield, Teruo Hashimoto, Yunze Gao, Wendong Wang, Matthew Hamer, Harriet Read, Laura Fumagalli, Andrey V Kretinin, Sarah J. Haigh, Olga Kazakova, A. K. Geim, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta… ▽ More Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions. △ Less

Submitted 14 August, 2021; originally announced August 2021.

Comments: 15 pages, 3 figures

Ion exchange in atomically thin clays and micas

Authors: Yi-Chao Zou, Lucas Mogg, Nick Clark, Cihan Bacaksiz, Slavisa Milanovic, Vishnu Sreepal, Guang-** Hao, Yi-Chi Wang, David G. Hopkinson, Roman Gorbachev, Samuel Shaw, Kostya S. Novoselov, Rahul Raveendran-Nair, Francois M. Peeters, Marcelo Lozada-Hidalgo, Sarah J. Haigh

Abstract: Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomical… ▽ More Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomically thin materials. Here we use atomic-resolution scanning transmission electron microscopy to study the dynamics of the process and reveal the binding sites of individual ions in atomically thin and artificially restacked clays and micas. Imaging ion exchange after different exposure time and for different crystal thicknesses, we find that the ion diffusion constant, D, for the interlayer space of atomically thin samples is up to 10^4 times larger than in bulk crystals and approaches its value in free water. Surprisingly, samples where no bulk exchange is expected display fast exchange if the mica layers are twisted and restacked; but in this case, the exchanged ions arrange in islands controlled by the moiré superlattice dimensions. We attribute the fast ion diffusion to enhanced interlayer expandability resulting from weaker interlayer binding forces in both atomically thin and restacked materials. Finally, we demonstrate images of individual surface cations for these materials, which had remained elusive in previous studies. This work provides atomic scale insights into ion diffusion in highly confined spaces and suggests strategies to design novel exfoliated clays membranes. △ Less

Submitted 14 July, 2021; originally announced July 2021.

Comments: 11 pages, 4 figures, plus 35 pages supplementary information

Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene

Authors: Matthew J. Hamer, Alessio Giampietri, Viktor Kandyba, Francesca Genuzio, Tevfik O. Mentes, Andrea Locatelli, Roman V. Gorbachev, Alexei Barinov, Marcin Mucha-Kruczynski

Abstract: In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Bri… ▽ More In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $θ>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme do** of graphene, could be explored experimentally. △ Less

Submitted 27 January, 2022; v1 submitted 19 October, 2020; originally announced October 2020.

Comments: main text: 25 pages, 5 figures; supplement: 22 pages, 7 figures

Journal ref: ACS Nano 16, 1954 (2022)

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

Authors: Abigail J. Graham, Johanna Zultak, Matthew J. Hamer, Viktor Zolyomi, Samuel Magorrian, Alexei Barinov, Viktor Kandyba, Alessio Giampietri, Andrea Locatelli, Francesca Genuzio, Natalie C. Teutsch, Temok Salazar, Nicholas D. M. Hine, Vladimir I. Fal'ko, Roman V. Gorbachev, Neil R. Wilson

Abstract: In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic… ▽ More In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering. △ Less

Submitted 8 January, 2021; v1 submitted 27 August, 2020; originally announced August 2020.

Comments: Main paper: 21 pages, 4 figures. Supplementary Material: 12 pages, 7 figures

Journal ref: 2D Materials, 8, 015016. 2021

Atomic Resolution Imaging of CrBr$_{3}$ using Adhesion-Enhanced Grids

Authors: Matthew J. Hamer, David G. Hopkinson, Nick Clark, Mingwei Zhou, Wendong Wang, Yichao Zou, Daniel J. Kelly, Thomas H. Bointon, Sarah J. Haigh, Roman V. Gorbachev

Abstract: Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air sensitive materials, has been held back by the difficulty of fabricating the… ▽ More Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution which allows clean free-standing specimens to be realized with 100% yield by dry-stam** atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr3, a novel magnetic material which degrades in ambient conditions. △ Less

Submitted 11 August, 2020; originally announced August 2020.

Comments: 17 pages (+ references), 3 Figures, 1 Table

Tiny-YOLO object detection supplemented with geometrical data

Authors: Ivan Khokhlov, Egor Davydenko, Ilya Osokin, Ilya Ryakin, Azer Babaev, Vladimir Litvinenko, Roman Gorbachev

Abstract: We propose a method of improving detection precision (mAP) with the help of the prior knowledge about the scene geometry: we assume the scene to be a plane with objects placed on it. We focus our attention on autonomous robots, so given the robot's dimensions and the inclination angles of the camera, it is possible to predict the spatial scale for each pixel of the input frame. With slightly modif… ▽ More We propose a method of improving detection precision (mAP) with the help of the prior knowledge about the scene geometry: we assume the scene to be a plane with objects placed on it. We focus our attention on autonomous robots, so given the robot's dimensions and the inclination angles of the camera, it is possible to predict the spatial scale for each pixel of the input frame. With slightly modified YOLOv3-tiny we demonstrate that the detection supplemented by the scale channel, further referred as S, outperforms standard RGB-based detection with small computational overhead. △ Less

Submitted 15 October, 2020; v1 submitted 5 August, 2020; originally announced August 2020.

Comments: 5 pages, 5 figures, published in 2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring)

Long-range ballistic transport of Brown-Zak fermions in graphene superlattices

Authors: Julien Barrier, Piranavan Kumaravadivel, Roshan Krishna-Kumar, L. A. Ponomarenko, Na Xin, Matthew Holwill, Ciaran Mullan, Minsoo Kim, R. V. Gorbachev, M. D. Thompson, J. R. Prance, T. Taniguchi, K. Watanabe, I. V. Grigorieva, K. S. Novoselov, A. Mishchenko, V. I. Fal'ko, A. K. Geim, A. I. Berdyugin

Abstract: In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Br… ▽ More In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field. △ Less

Submitted 6 October, 2020; v1 submitted 26 June, 2020; originally announced June 2020.

Comments: 16 pages, 13 figures

Journal ref: Nat Commun 11, 5756 (2020)

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Authors: Maciej R. Molas, Anastasia V. Tyurnina, Viktor Zólyomi, Anna K. Ott, Daniel J. Terry, Matthew J. Hamer, Celal Yelgel, Adam Babiński, Albert G. Nasibulin, Andrea C. Ferrari, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-depe… ▽ More III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 6 pages, 5 figures

Journal ref: Faraday Discussions 227, 163 (2021)

Composite super-moiré lattices in double aligned graphene heterostructures

Authors: Zihao Wang, Yi Bo Wang, J. Yin, E. Tóvári, Y. Yang, L. Lin, M. Holwill, J. Birkbeck, D. J. Perello, Shuigang Xu, J. Zultak, R. V. Gorbachev, A. V. Kretinin, T. Taniguchi, K. Watanabe, S. V. Morozov, M. Anđelković, S. P. Milovanović, L. Covaci, F. M. Peeters, A. Mishchenko, A. K. Geim, K. S. Novoselov, Vladimir I. Fal'ko, Angelika Knothe , et al. (1 additional authors not shown)

Abstract: When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitoni… ▽ More When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moiré patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moiré pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moiré super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 35 pages, 15 figures

Journal ref: Science Advances 20 Dec 2019: Vol. 5, no. 12, eaay8897

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Authors: Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak, Daniil Domaretskiy, Viktor Zólyomi, Daniel Terry, James Howarth, Ignacio Gutiérrez-Lezama, Alexander Zhukov, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Vladimir I. Fal'ko, Alberto F. Morpurgo

Abstract: Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app… ▽ More Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 21 December, 2019; originally announced December 2019.

Journal ref: Nature Materials (2020)

Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation

Authors: J. Bekaert, E. Khestanova, D. G. Hopkinson, J. Birkbeck, N. Clark, M. Zhu, D. A. Bandurin, R. Gorbachev, S. Fairclough, Y. Zou, M. Hamer, D. J. Terry, J. J. P. Peters, A. M. Sanchez, B. Partoens, S. J. Haigh, M. V. Milošević, I. V. Grigorieva

Abstract: When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen in… ▽ More When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Authors: Astrid Weston, Yichao Zou, Vladimir Enaldiev, Alex Summerfield, Nicholas Clark, Viktor Z'olyomi, Abigail Graham, Celal Yelgel, Samuel Magorrian, Mingwei Zhou, Johanna Zultak, David Hopkinson, Alexei Barinov, Thomas Bointon, Andrey Kretinin, Neil R. Wilson, Peter H. Beton, Vladimir I. Fal'ko, Sarah J. Haigh, Roman Gorbachev

Abstract: Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bil… ▽ More Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains. △ Less

Submitted 7 July, 2020; v1 submitted 28 November, 2019; originally announced November 2019.

Control of electron-electron interaction in graphene by proximity screening

Authors: M. Kim, S. G. Xu, A. I. Berdyugin, A. Principi, S. Slizovskiy, N. Xin, P. Kumaravadivel, W. Kuang, M. Hamer, R. Krishna Kumar, R. V. Gorbachev, K. Watanabe, T. Taniguchi, I. V. Grigorieva, V. I. Fal'ko, M. Polini, A. K. Geim

Abstract: Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomic… ▽ More Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important only at gate dielectric thicknesses of a few nm, much smaller than a typical separation between electrons. Our theoretical analysis agrees well with the scattering rates extracted from measurements of electron viscosity in monolayer graphene and of umklapp electron-electron scattering in graphene superlattices. The results provide a guidance for future attempts to achieve proximity screening of many-body phenomena in two-dimensional systems. △ Less

Submitted 12 May, 2020; v1 submitted 22 November, 2019; originally announced November 2019.

Comments: 16 pages, 7 figures

Journal ref: Nature Communications 11, 2339 (2020)

Ultra-thin van der Waals crystals as semiconductor quantum wells

Authors: Johanna Zultak, Samuel Magorrian, Maciej Koperski, Alistair Garner, Matthew J Hamer, Endre Tovari, Kostya S Novoselov, Alexander Zhukov, Yichao Zou, Neil R. Wilson, Sarah J Haigh, Andrey Kretinin, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials.… ▽ More Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials. △ Less

Submitted 31 October, 2019; v1 submitted 9 October, 2019; originally announced October 2019.

Comments: 12 pages, 3 figures

Journal ref: Nat Commun 11, 125 (2020)

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Authors: Evgeny M. Alexeev, David A. Ruiz-Tijerina, Mark Danovich, Matthew J. Hamer, Daniel J. Terry, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Maciej R. Molas, Maciej Koperski, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Roman V. Gorbachev, Hyeon Suk Shin, Vladimir I. Fal'ko, Alexander I. Tartakovskii

Abstract: Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu… ▽ More Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 43 pages, 14 figures, includes supplementary information

Journal ref: Nature 567, 81 (2019)

Niobium diselenide superconducting photodetectors

Authors: Gavin J. Orchin, Domenico De Fazio, Angelo Di Bernardo, Matthew Hamer, Duhee Yoon, Alisson R. Cadore, Ilya Goykhman, Kenji Watanabe, Takashi Taniguchi, Jason W. A. Robinson, Roman V. Gorbachev, Andrea C. Ferrari, Robert H. Hadfield

Abstract: We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical map** in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken… ▽ More We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical map** in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Comments: 6 pages, 6 figures

Micromagnetometry of two-dimensional ferromagnets

Authors: M. Kim, P. Kumaravadivel, J. Birkbeck, W. Kuang, S. G. Xu, D. G. Hopkinson, J. Knolle, P. A. McClarty, A. I. Berdyugin, M. Ben Shalom, R. V. Gorbachev, S. J. Haigh, S. Liu, J. H. Edgar, K. S. Novoselov, I. V. Grigorieva, A. K. Geim

Abstract: The study of atomically thin ferromagnetic crystals has led to the discovery of unusual magnetic behaviour and provided insight into the magnetic properties of bulk materials. However, the experimental techniques that have been used to explore ferromagnetism in such materials cannot probe the magnetic field directly. Here, we show that ballistic Hall micromagnetometry can be used to measure the ma… ▽ More The study of atomically thin ferromagnetic crystals has led to the discovery of unusual magnetic behaviour and provided insight into the magnetic properties of bulk materials. However, the experimental techniques that have been used to explore ferromagnetism in such materials cannot probe the magnetic field directly. Here, we show that ballistic Hall micromagnetometry can be used to measure the magnetization of individual two-dimensional ferromagnets. Our devices are made by van der Waals assembly in such a way that the investigated ferromagnetic crystal is placed on top of a multi-terminal Hall bar made from encapsulated graphene. We use the micromagnetometry technique to study atomically thin chromium tribromide (CrBr3). We find that the material remains ferromagnetic down to monolayer thickness and exhibits strong out-of-plane anisotropy. We also find that the magnetic response of CrBr3 varies little with the number of layers and its temperature dependence cannot be described by the simple Ising model of two-dimensional ferromagnetism. △ Less

Submitted 12 October, 2019; v1 submitted 19 February, 2019; originally announced February 2019.

Comments: 19 pages, 12 figures

Journal ref: Nature Electronics 2, 457 (2019)

Field-induced insulating states in a graphene superlattice

Authors: S. Pezzini, S. Wiedmann, A. Mishchenko, M. Holwill, R. Gorbachev, D. Ghazaryan, K. S. Novoselov, U. Zeitler

Abstract: We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antifer… ▽ More We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states develo** in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles. △ Less

Submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 99, 045440 (2019)

Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES

Authors: Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina, Viktor Zólyomi, Daniel Terry, Alexei Barinov, Alistair Garner, Jack Donoghue, Aidan P. Rooney, Viktor Kandyba, Alessio Giampietri, Abigail J. Graham, Natalie C. Teutsch, Xue Xia, Maciej Koperski, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev, Neil R. Wilson

Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye… ▽ More Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Journal ref: ACS Nano, 2019, 13, pp 2136-2142

Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures

Authors: Daniel J. Terry, Viktor Zólyomi, Matthew Hamer, Anastasia V. Tyurnina, David G. Hopkinson, Alexander M. Rakowski, Samuel J. Magorrian, Nick Clark, Yuri M. Andreev, Olga Kazakova, Konstantin Novoselov, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band… ▽ More Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the spectral range provided by InSe films, so that optical activity of these two almost lattice-matched PTMC films and their heterostructures densely cover the spectrum of photons from violet to infrared. We demonstrate the realisation of the latter by the first observation of interlayer excitonic photoluminescence in few-layer InSe-GaSe heterostructures. The spatially indirect transition is direct in k-space and therefore is bright, while its energy can be tuned in a broad range by the number of layers. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Comments: 8 pages 4 figures

Journal ref: 2D Mater. 5 041009, 2018

High quality factor graphene-based 2D heterostructure mechanical resonator

Authors: M. Will, M. Hamer, M. Müller, A. Noury, P. Weber, A. Bachtold, R. V. Gorbachev, C. Stampfer, J. Güttinger

Abstract: Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical res… ▽ More Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical resonator consisting of few layers of niobium diselenide (NbSe$_2$) encapsulated by two graphene sheets. The hybrid membrane shows high quality factors up to 245'000 at low temperatures, comparable to the best few-layer graphene mechanical resonators. In contrast to few-layer graphene resonators, the device shows reduced electrical losses attributed to the lower resistivity of the NbSe$_2$ layer. The peculiar low temperature dependence of the intrinsic quality factor points to dissipation over two-level systems which in turn relax over the electronic system. Our high sensitivity readout is enabled by coupling the membrane to a superconducting cavity which allows for the integration of the hybrid mechanical resonator as a sensitive and low loss transducer in future quantum circuits. △ Less

Submitted 17 September, 2018; originally announced September 2018.

Journal ref: Nano Lett., 2017, 17 (10), pp 5950-5955

Anomalous twin boundaries in 2D materials

Authors: A. P. Rooney, Z. Li, W. Zhao, A. Gholinia, A. Kosikov, G. Auton, F. Ding, R. V. Gorbachev, R. J. Young, S. J Haigh

Abstract: The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2].… ▽ More The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth. △ Less

Submitted 1 September, 2018; originally announced September 2018.

Comments: 18 pages, 5 figures

Optical second harmonic generation in encapsulated single-layer InSe

Authors: Nadine Leisgang, Jonas G. Roch, Guillaume Froehlicher, Matthew Hamer, Daniel Terry, Roman Gorbachev, Richard J. Warburton

Abstract: We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in si… ▽ More We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in single-layer InSe and to relate the sharp edges of the flake to the armchair and zigzag edges of the crystal structure. Our experiment determines these angles to an accuracy better than $\pm$ $0.2^{\circ}$. Treating the two-dimensional material as a nonlinear polarizable sheet, we determine a second-order nonlinear sheet polarizability $| χ_{\textrm{sheet}}^{(2)}|=(17.9 \pm 11.0)\times 10^{-20}$ $\textrm{m}^2 \textrm{V}^{-1}$ for single-layer InSe, corresponding to an effective nonlinear susceptibility value of $| χ_\textrm{eff}^{(2)}| \approx (223 \pm 138) \times 10^{-12}$ $\textrm{m} \textrm{V}^{-1}$ accounting for the sheet thickness ($\textrm{d} \approx 0.8$ $\textrm{nm}$). We demonstrate that the SHG technique can also be applied to encapsulated samples to probe their crystal orientations. The method is therefore suitable for creating high quality van der Waals heterostructures with control over the crystal directions. △ Less

Submitted 17 August, 2018; originally announced August 2018.

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

Authors: Yong** Lee, Riccardo Pisoni, Hiske Overweg, Marius Eich, Peter Rickhaus, Amalia Patanè, Zakhar R. Kudrynskyi, Zakhar. D. Kovalyuk, Roman Gorbachev, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin

Abstract: In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measureme… ▽ More In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot. △ Less

Submitted 28 May, 2018; originally announced May 2018.

Comments: 11 pages, 4 figures

Journal ref: 2D Mater. 5 035040,2018

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Authors: Matthew Hamer, Endre Tóvári, Mengjian Zhu, Michael D. Thompson, Alexander Mayorov, Jonathon Prance, Yong** Lee, Richard P. Haley, Zakhar R. Kudrynskyi, Amalia Patanè, Daniel Terry, Zakhar D. Kovalyuk, Klaus Ensslin, Andrey V. Kretinin, Andre Geim, Roman Gorbachev

Abstract: Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gati… ▽ More Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Comments: 13 pages, 3 figures

Journal ref: Nano Lett., 2018, 18 (6), p 3950

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

Authors: Ekaterina Khestanova, John Birkbeck, Mengjian Zhu, Yang Cao, Geliang Yu, Davit Ghazaryan, Jun Yin, Helmuth Berger, Laszlo Forro, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Artem Mishchenko, Andre K. Geim, Irina V. Grigorieva

Abstract: It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 -… ▽ More It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors. △ Less

Submitted 13 March, 2018; originally announced March 2018.

Comments: 21 pages, including supporting information

Journal ref: Nano Lett. 18, 2623-2629 (2018)

Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

Authors: Riccardo Frisenda, Efrén Navarro-Moratalla, Patricia Gant, David Pérez De Lara, Pablo Jarillo-Herrero, Roman V. Gorbachev, Andres Castellanos-Gomez

Abstract: Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate comp… ▽ More Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle. △ Less

Submitted 15 November, 2017; originally announced December 2017.

Comments: Tutorial Review, 13 figures. Authors' pre-peer review version of the article

Nanometer Resolution Elemental Map** in Graphene-based TEM Liquid Cells

Authors: Daniel J. Kelly, Mingwei Zhou, Nick Clark, Matthew J. Hamer, Edward A. Lewis, Alexander M. Rakowski, Sarah J. Haigh, Roman V. Gorbachev

Abstract: We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated from both sides with graphene windows. The ultra-thin window liquid cells produced have precisely controlled volumes and thicknesses, and are robust to repeated vacuum cycling. This technology enables exciting new opportunities for liquid cell studies, pr… ▽ More We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated from both sides with graphene windows. The ultra-thin window liquid cells produced have precisely controlled volumes and thicknesses, and are robust to repeated vacuum cycling. This technology enables exciting new opportunities for liquid cell studies, providing a reliable platform for high resolution transmission electron microscope imaging and spectral map**. The presence of water was confirmed using electron energy loss spectroscopy (EELS) via the detection of the oxygen K-edge and measuring the thickness of full and empty cells. We demonstrate the imaging capabilities of these liquid cells by tracking the dynamic motion and interactions of small metal nanoparticles with diameters of 0.5-5 nm. We further present an order of magnitude improvement in the analytical capabilities compared to previous liquid cell data, with 1 nm spatial resolution elemental map** achievable for liquid encapsulated bimetallic nanoparticles using energy dispersive X-ray spectroscopy (EDXS). △ Less

Submitted 18 October, 2017; originally announced October 2017.

Comments: 25 pages, 4 figures

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Authors: Nils M. Freitag, Tobias Reisch, Larisa A. Chizhova, Peter Nemes-Incze, Christian Holl, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking… ▽ More Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits. △ Less

Submitted 20 March, 2018; v1 submitted 30 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology (2018)

Observing imperfection in atomic interfaces for van der Waals heterostructures

Authors: Aidan. P. Rooney, Aleksey Kozikov, Alexander N. Rudenko, Eric Prestat, Matthew J Hamer, Freddie Withers, Yang Cao, Kostya S. Novoselov, Mikhail I. Katsnelson, Roman Gorbachev, Sarah J. Haigh

Abstract: Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron… ▽ More Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS2 or WS2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe2 and WSe2, our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN: interfaces which are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two dimensional (2D) crystal NbSe2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glove-box transfer significantly improves the quality of interfaces for WSe2 compared to processing in air. △ Less

Submitted 25 July, 2017; originally announced July 2017.

Journal ref: Nano Lett 2017, 17 (9), pp 5222

Evaluating arbitrary strain configurations and do** in graphene with Raman spectroscopy

Authors: Niclas S. Mueller, Sebastian Heeg, Miriam Peña Alvarez, Patryk Kusch, Sören Wasserroth, Nick Clark, Fred Schedin, John Parthenios, Konstantinos Papagelis, Costas Galiotis, Martin Kalbáč, Aravind Vijayaraghavan, Uwe Huebner, Roman Gorbachev, Otakar Frank, Stephanie Reich

Abstract: Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous do**. It relies on separating the effects of hydrostatic strain (peak shift) and shear strain (peak splitting) on the Raman spectrum of graphene. The peak shifts from hydrostatic strain and do** are separated with a… ▽ More Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous do**. It relies on separating the effects of hydrostatic strain (peak shift) and shear strain (peak splitting) on the Raman spectrum of graphene. The peak shifts from hydrostatic strain and do** are separated with a correlation analysis of the 2D and G frequencies. This enables us to obtain the local hydrostatic strain, shear strain and do** without any assumption on the strain configuration prior to the analysis. We demonstrate our approach for two model cases: Graphene under uniaxial stress on a PMMA substrate and graphene suspended on nanostructures that induce an unknown strain configuration. We measured $ω_\mathrm{2D}/ω_\mathrm{G} = 2.21 \pm 0.05$ for pure hydrostatic strain. Raman scattering with circular corotating polarization is ideal for analyzing strain and do**, especially for weak strain when the peak splitting by shear strain cannot be resolved. △ Less

Submitted 7 April, 2017; v1 submitted 28 March, 2017; originally announced March 2017.

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures

Authors: Riccardo Pisoni, Yong** Lee, Hiske Overweg, Marius Eich, Pauline Simonet, Kenji Watanabe, Takashi Taniguchi, Roman Gorbachev, Thomas Ihn, Klaus Ensslin

Abstract: We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman ef… ▽ More We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features. △ Less

Submitted 21 July, 2017; v1 submitted 30 January, 2017; originally announced January 2017.

Comments: 4 figures

Journal ref: Nano Letters, 2017

Tuning the pseudospin polarization of graphene by a pseudo-magnetic field

Authors: Alexander Georgi, Peter Nemes-Incze, Ramon Carrillo-Bastos, Daiara Faria, Silvia Viola Kusminskiy, Dawei Zhai, Martin Schneider, Dinesh Subramaniam, Torge Mashoff, Nils M. Freitag, Marcus Liebmann, Marco Pratzer, Ludger Wirtz, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Kostya S. Novoselov, Nancy Sandler, Markus Morgenstern

Abstract: One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable… ▽ More One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics. △ Less

Submitted 6 March, 2017; v1 submitted 18 November, 2016; originally announced November 2016.

Comments: Revised manuscript: streamlined the abstract and introduction, added methods to supplement, Nano Letters, 2017

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

Authors: D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. Krishna Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim, Y. Cao

Abstract: A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexag… ▽ More A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 1,000 and 10,000 cm2/Vs at room and liquid-helium temperatures, respectively, allowing the observation of the fully-developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically-thin dichalcogenides and black phosphorus. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Journal ref: Nature Nanotechnology 12, 223-227 (2016)

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

Authors: Nils M. Freitag, Larisa A. Chizhova, Peter Nemes-Incze, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy… ▽ More The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Magnetotransport in single layer graphene in a large parallel magnetic field

Authors: F. Chiappini, S. Wiedmann, M. Titov, A. K. Geim, R. V. Gorbachev, E. Khestanova, A. Mishchenko, K. S. Novoselov, J. C. Maan, U. Zeitler

Abstract: Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal… ▽ More Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality. △ Less

Submitted 18 July, 2016; v1 submitted 4 February, 2016; originally announced February 2016.

Comments: v2: updated with some modifications/clarifications

Journal ref: Phys. Rev. B 94, 085302 (2016)

Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus

Authors: Artem Mishchenko, Yang Cao, Geliang Yu, Colin R. Woods, Roman V. Gorbachev, Kostya S. Novoselov, Andre K. Geim, Leonid S. Levitov

Abstract: Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from other atomically thin crystals is its structural in-plane anisotropy which manifests in strongly anisotropic transport characteristics. However, traditional an… ▽ More Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from other atomically thin crystals is its structural in-plane anisotropy which manifests in strongly anisotropic transport characteristics. However, traditional angle-resolved conductance measurements present a challenge for nanoscale systems such as black phosphorus, calling for new approaches in precision studies of transport anisotropy. Here we show that the nonlocal response, being exponentially sensitive to the anisotropy value, provides a powerful tool for determining the anisotropy. This is established by combining measurements of the orientation-dependent nonlocal resistance response with the analysis based on the anamorphosis relations. We demonstrate that the nonlocal response can differ by orders of magnitude for different crystallographic directions even when the anisotropy is at most order-one, allowing us to extract accurate anisotropy values. △ Less

Submitted 22 September, 2015; originally announced September 2015.

Journal ref: Nano Lett. 15 (10), pp 6991-6995 (2015)

Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere

Authors: Y. Cao, A. Mishchenko, G. L. Yu, K. Khestanova, A. Rooney, E. Prestat, A. V. Kretinin, P. Blake, M. B. Shalom, G. Balakrishnan, I. V. Grigorieva, K. S. Novoselov, B. A. Piot, M. Potemski, K. Watanabe, T. Taniguchi, S. J. Haigh, A. K. Geim, R. V. Gorbachev

Abstract: Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation and possible uses. Here we introduce a remedial approach based on cleavage, transfer, alignment and encapsulation of air-sensitive crystals, all insi… ▽ More Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation and possible uses. Here we introduce a remedial approach based on cleavage, transfer, alignment and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Comments: 4 figures

Journal ref: Nano Letters 15 (8), pp 4914 - 4921 (2015)

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Authors: A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. -J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Falko, A. K. Geim, L. Eaves, K. S. Novoselov

Abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic… ▽ More Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: For Supplementary Information see http://www.nature.com/nnano/journal/vaop/ncurrent/extref/nnano.2014.187-s1.pdf

Journal ref: Nature Nanotechnology 9, 808-813 (2014)

Detecting Topological Currents in Graphene Superlattices

Authors: R. V. Gorbachev, J. C. W. Song, G. L. Yu, A. V. Kretinin, F. Withers, Y. Cao, A. Mishchenko, I. V. Grigorieva, K. S. Novoselov, L. S. Levitov, A. K. Geim

Abstract: Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a n… ▽ More Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several microns away from the nominal current path. Locally, topological currents are comparable in strength to the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: 19 pgs, 9 fgs

Journal ref: Science 346, 448-451 (2014)

Non-destructive electron microscopy imaging and analysis of biological samples with graphene coating

Authors: Jong Bo Park, Yong-** Kim, Je Min Yoo, Youngsoo Kim, Seong-Min Kim, Sang ** Kim, Roman Gorbachev, I. I. Barbolina, Myung-Han Yoon, Byung Hee Hong, Konstantin S. Novoselov

Abstract: In electron microscopy, charging of non-conductive biological samples by focused electron beams hinders their high-resolution imaging. Gold or platinum coatings have been commonly used to prevent such sample charging, but it disables further quantitative and qualitative chemical analyses by energy dispersive spectroscopy (EDS). Here we report that graphene-coating on biological samples enables non… ▽ More In electron microscopy, charging of non-conductive biological samples by focused electron beams hinders their high-resolution imaging. Gold or platinum coatings have been commonly used to prevent such sample charging, but it disables further quantitative and qualitative chemical analyses by energy dispersive spectroscopy (EDS). Here we report that graphene-coating on biological samples enables non-destructive high-resolution imaging by scanning electron microscopy (SEM) as well as chemical analysis by EDS, utilizing graphene's transparency to electron beams, high conductivity, outstanding mechanical strength, and flexibility. We believe that the graphene-coated imaging and analysis would provide us a new opportunity to explore various biological phenomena unseen before due to the limitation in sample preparation and image resolution, which will broaden our understanding on the life mechanism of various living organisms. △ Less

Submitted 8 July, 2014; originally announced July 2014.