Showing 1–50 of 55 results for author: Gonzalez-Zalba, F

A multi-module silicon-on-insulator chip assembly containing quantum dots and cryogenic radio-frequency readout electronics

Authors: David J. Ibberson, James Kirkman, John J. L. Morton, M. Fernando Gonzalez-Zalba, Alberto Gomez-Saiz

Abstract: Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been f… ▽ More Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been fabricated using the same fully-depleted silicon-on-insulator (FDSOI) CMOS process. The assembly is constituted by three chiplets: (i) a low-noise amplifier (LNA), (ii) a single-pole eight-throw switch (SP8T), and (iii) a silicon quantum dot (QD) array. We characterise each module individually and show (i) a gain over 35 dB, a bandwidth of 118 MHz, a minimum noise temperature of 4.2 K, (ii) an insertion loss smaller than 1.1 dB, a noise temperature smaller than 1.1~K across 0-2 GHz, and (iii) single-electron box (SEB) charge sensors. Finally, we combine all elements into a single demonstration showing time-domain radio-frequency multiplexing of two SEBs paving the way to an all-silicon quantum computing system. △ Less

Submitted 30 May, 2024; v1 submitted 7 May, 2024; originally announced May 2024.

Comments: This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible

Electrical readout of spins in the absence of spin blockade

Authors: Felix-Ekkehard von Horstig, Lorenzo Peri, Sylvain Barraud, Jason A. W. Robinson, Monica Benito, Frederico Martins, M. Fernando Gonzalez-Zalba

Abstract: In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying e… ▽ More In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying excited states, hence posing challenges to perform spin readout at scale and with high fidelity in such systems. Here, we present a method, based on the dependence of the two-spin system polarizability on energy detuning, to perform spin state readout even when SB lifting mechanisms are dominant. It leverages SB lifting as a resource to detect different spin measurement outcomes selectively and positively. We demonstrate the method using a hybrid system formed by a quantum dot (QD) and a Boron acceptor in a silicon p-type transistor and show spin selective and positive readout of different spin states under SB lifting conditions due to (i) SOC and (ii) low-lying orbital states in the QD. We further use the method to determine the detuning-dependent spin relaxation time of 0.1-8~$μ$s. Our method should help perform high-fidelity projective spin measurements in systems subject to strong SOC and may facilitate quantum tomography and state leakage studies. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Comments: 13 pages, 10 figures

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Authors: Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton

Abstract: Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and po… ▽ More Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: Main text: 14 pages, 8 figures, 1 table Supplementary: 8 pages, 6 figures

Alternative fast quantum logic gates using nonadiabatic Landau-Zener-Stückelberg-Majorana transitions

Authors: A. I. Ryzhov, O. V. Ivakhnenko, S. N. Shevchenko, M. F. Gonzalez-Zalba, Franco Nori

Abstract: A conventional realization of quantum logic gates and control is based on resonant Rabi oscillations of the occupation probability of the system. This approach has certain limitations and complications, like counter-rotating terms. We study an alternative paradigm for implementing quantum logic gates based on Landau-Zener-Stückelberg-Majorana (LZSM) interferometry with non-resonant driving and the… ▽ More A conventional realization of quantum logic gates and control is based on resonant Rabi oscillations of the occupation probability of the system. This approach has certain limitations and complications, like counter-rotating terms. We study an alternative paradigm for implementing quantum logic gates based on Landau-Zener-Stückelberg-Majorana (LZSM) interferometry with non-resonant driving and the alternation of adiabatic evolution and non-adiabatic transitions. Compared to Rabi oscillations, the main differences are a non-resonant driving frequency and a small number of periods in the external driving. We explore the dynamics of a multilevel quantum system under LZSM drives and optimize the parameters for increasing single- and two-qubit gates speed. We define the parameters of the external driving required for implementing some specific gates using the adiabatic-impulse model. The LZSM approach can be applied to a large variety of multi-level quantum systems and external driving, providing a method for implementing quantum logic gates on them. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Comments: 15 pages, 12 figures

Unified linear response theory of quantum electronic circuits

Authors: L. Peri, M. Benito, C. J. B. Ford, M. F. Gonzalez-Zalba

Abstract: Modelling the electrical response of multi-level quantum systems at finite frequency has been typically performed in the context of two incomplete paradigms: (i) input-output theory, which is valid at any frequency but neglects dynamic losses, and (ii) semiclassical theory, which captures well dynamic dissipation effects but is only accurate at low frequencies. Here, we develop a unifying theory,… ▽ More Modelling the electrical response of multi-level quantum systems at finite frequency has been typically performed in the context of two incomplete paradigms: (i) input-output theory, which is valid at any frequency but neglects dynamic losses, and (ii) semiclassical theory, which captures well dynamic dissipation effects but is only accurate at low frequencies. Here, we develop a unifying theory, valid for arbitrary frequencies, that captures both the quantum behaviour and the non-unitary effects introduced by relaxation and dephasing. The theory allows a multi-level system to be described by a universal small-signal equivalent circuit model, a resonant RLC circuit, whose topology only depends on the number of energy levels. We apply our model to a double quantum-dot charge qubit and a Majorana qubit, showing the capability to continuously describe the systems from adiabatic to resonant and from coherent to incoherent, suggesting new and realistic experiments for improved quantum state readout. Our model will facilitate the design of hybrid quantum-classical circuits and the simulation of qubit control and quantum state readout. △ Less

Submitted 29 May, 2024; v1 submitted 26 October, 2023; originally announced October 2023.

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Authors: Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to ass… ▽ More Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 $μ$m the power budget raises to 150 $μ$W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems. △ Less

Submitted 17 October, 2023; originally announced October 2023.

CMOS on-chip thermometry at deep cryogenic temperatures

Authors: Grayson M. Noah, Thomas Swift, Mathieu de Kruijf, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon o… ▽ More Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon oxide, and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to complementary metal-oxide-semiconductor (CMOS) industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena which emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the milliKelivin range to room temperature. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics

Authors: L. Peri, G. A. Oakes, L. Cochrane, C. J. B. Ford, M. F. Gonzalez-Zalba

Abstract: Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-cou… ▽ More Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions. △ Less

Submitted 18 March, 2024; v1 submitted 31 July, 2023; originally announced July 2023.

Journal ref: Quantum 8, 1294 (2024)

Pipeline quantum processor architecture for silicon spin qubits

Authors: S. M. Patomäki, M. F. Gonzalez-Zalba, M. A. Fogarty, Z. Cai, S. C. Benjamin, J. J. L. Morton

Abstract: Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states… ▽ More Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states through a layered physical array of structures which realise single and two-qubit gates. Such an approach lends itself to NISQ applications such as variational quantum eigensolvers which require numerous repetitions of the same calculation, or small variations thereof. In exchange for simplifying run-time control, a larger number of physical structures is required for shuttling the qubits as the circuit depth now corresponds to an array of physical structures. However, qubit states can be `pipelined' densely through the arrays for repeated runs to make more efficient use of physical resources. We describe how the qubit pipeline can be implemented in a silicon spin-qubit platform, to which it is well suited to due to the high qubit density and scalability. In this implementation, we describe the physical realisation of single and two qubit gates which represent a universal gate set that can achieve fidelities of $\mathcal{F} \geq 0.9999$, even under typical qubit frequency variations. △ Less

Submitted 13 June, 2023; originally announced June 2023.

Comments: 21 pages (13 for main + 8 for supplement), 9 figures (4 for main + 5 for supplement)

Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots

Authors: Felix-Ekkehard von Horstig, David J. Ibberson, Giovanni A. Oakes, Laurence Cochrane, David F. Wise, Nadia Stelmashenko, Sylvain Barraud, Jason A. W. Robinson, Frederico Martins, M. Fernando Gonzalez-Zalba

Abstract: Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing qu… ▽ More Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-$κ$ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as $LC$ filters that, when interfaced with the silicon chip, result in a resonant frequency $f=2.12$ GHz, a loaded quality factor $Q=850$, and a resonator impedance $Z=470$ $Ω$. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/$f$ dependence across the whole frequency spectrum as well as a charge noise level of 4 $μ$eV/$\sqrt{\text{Hz}}$ at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication. △ Less

Submitted 2 May, 2024; v1 submitted 26 April, 2023; originally announced April 2023.

Comments: Main: 8 pages, 4 figures. Supplementary: 4 pages, 7 figures

An elongated quantum dot as a distributed charge sensor

Authors: S. M. Patomäki, J. Williams, F. Berritta, C. Laine, M. A. Fogarty, R. C. C. Leon, J. Jussot, S. Kubicek, A. Chatterjee, B. Govoreanu, F. Kuemmeth, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate… ▽ More Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Comments: 14 pages, 9 figures

Report number: NBI QDEV 2024

Journal ref: Phys. Rev. Applied 21, 054042 (2024)

A quantum dot-based frequency multiplier

Authors: G. A. Oakes, L. Peri, L. Cochrane, F. Martins, L. Hutin, B. Bertrand, M. Vinet, A. Gomez Saiz, C. J. B. Ford, C. G. Smith, M. F. Gonzalez-Zalba

Abstract: Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance… ▽ More Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Comments: 17 pages, 16 figures

Gate-based spin readout of hole quantum dots with site-dependent $g-$factors

Authors: Angus Russell, Alexander Zotov, Ruichen Zhao, Andrew S. Dzurak, M. Fernando Gonzalez-Zalba, Alessandro Rossi

Abstract: The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameter… ▽ More The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Landé $g-$factor, requiring careful characterisation for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magneto-spectroscopy convey information on site-dependent $g-$factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point out the prospect of conveniently extracting information about the local $g-$factors from reflectometry measurements. △ Less

Submitted 17 April, 2023; v1 submitted 27 June, 2022; originally announced June 2022.

Comments: Main manuscript: 12 pages, 8 figures. Supplementary Information: 3 pages, 2 figures

Journal ref: Phys. Rev. Applied 19, 044039 (2023)

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Authors: G. A. Oakes, V. N. Ciriano-Tejel, D. Wise, M. A. Fogarty, T. Lundberg, C. Lainé, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. A. W. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we… ▽ More Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Comments: Main: 9 pages, 4 figures, 1 table. Supplementary: 33 pages, 18 figures

Probing quantum devices with radio-frequency reflectometry

Authors: Florian Vigneau, Federico Fedele, Anasua Chatterjee, David Reilly, Ferdinand Kuemmeth, Fernando Gonzalez-Zalba, Edward Laird, Natalia Ares

Abstract: Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their… ▽ More Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most useful techniques in fast electrical readout is radio-frequency reflectometry, which can measure changes in impedance (both resistive and reactive) even when their duration is extremely short, down to a microsecond or less. Examples of reflectometry experiments, some of which have been realised and others so far only proposed, include projective measurements of qubits and Majorana devices for quantum computing, real-time measurements of mechanical motion and detection of non-equilibrium temperature fluctuations. However, all of these experiments must overcome the central challenge of fast readout: the large mismatch between the typical impedance of quantum devices (set by the resistance quantum) and of transmission lines (set by the impedance of free space). Here, we review the physical principles of radio-frequency reflectometry and its close cousins, measurements of radio-frequency transmission and emission. We explain how to optimise the speed and sensitivity of a radio-frequency measurement, and how to incorporate new tools such as superconducting circuit elements and quantum-limited amplifiers into advanced radio-frequency experiments. Our aim is three-fold: to introduce the readers to the technique, to review the advances to date and to motivate new experiments in fast quantum device dynamics. Our intended audience includes experimentalists in the field of quantum electronics who want to implement radio-frequency experiments or improve them, together with physicists in related fields who want to understand how the most important radio-frequency measurements work. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Comments: Review paper. 64 pages main text, 15 pages supplementary. 47 figures in main text, 5 in the supplementary

Report number: NBI QDEV 2023

Journal ref: Applied Physics Reviews 10, 021305 (2023)

Compilation and scaling strategies for a silicon quantum processor with sparse two-dimensional connectivity

Authors: O. Crawford, J. R. Cruise, N. Mertig, M. F. Gonzalez-Zalba

Abstract: Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our architecture is based on silicon nanowire split-gate transistors which can form finite 1d chains of spin-qubits and allow the execution of two-qubit operations such… ▽ More Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our architecture is based on silicon nanowire split-gate transistors which can form finite 1d chains of spin-qubits and allow the execution of two-qubit operations such as Swap gates among neighbors. Adding to this, we describe a novel silicon junction which can couple up to four nanowires into 2d arrangements via spin shuttling and Swap operations. Given these hardware elements, we propose a modular sparse 2d spin-qubit architecture with unit cells consisting of diagonally-oriented squares with nanowires along the edges and junctions on the corners. We show that this architecture allows for compilation strategies which outperform the best-in-class compilation strategy for 1d chains, not only asymptotically, but also down to the minimal structure of a single square. The proposed architecture exhibits favorable scaling properties which allow for balancing the trade-off between compilation overhead and co-location of classical control electronics within each square by adjusting the length of the nanowires. An appealing feature of the proposed architecture is its manufacturability using complementary-metal-oxide-semiconductor (CMOS) fabrication processes. Finally, we note that our compilation strategies, while being inspired by spin-qubits, are equally valid for any other quantum processor with sparse 2d connectivity. △ Less

Submitted 8 January, 2022; originally announced January 2022.

Comments: 19 pages, 10 figures

Quantum Dot-Based Parametric Amplifiers

Authors: Laurence Cochrane, Theodor Lundberg, David J. Ibberson, Lisa Ibberson, Louis Hutin, Benoit Bertrand, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Ashwin A. Seshia, M. Fernando Gonzalez-Zalba

Abstract: Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for p… ▽ More Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields. △ Less

Submitted 2 December, 2021; v1 submitted 23 November, 2021; originally announced November 2021.

Comments: 7 pages, 4 figures

Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot

Authors: Theodor Lundberg, David J. Ibberson, **g Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mech… ▽ More Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $μ$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control. △ Less

Submitted 20 October, 2021; v1 submitted 19 October, 2021; originally announced October 2021.

Comments: 12 pages, 10 figures. Minor updates to notation

Journal ref: npj Quantum Information 10, 28 (2024)

Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Authors: Andrea Ruffino, Tsung-Yeh Yang, John Michniewicz, Yatao Peng, Edoardo Charbon, Miguel Fernando Gonzalez-Zalba

Abstract: Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quan… ▽ More Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology. △ Less

Submitted 20 January, 2021; originally announced January 2021.

Roadmap on quantum nanotechnologies

Authors: Arne Laucht, Frank Hohls, Niels Ubbelohde, M Fernando Gonzalez-Zalba, David J Reilly, Søren Stobbe, Tim Schröder, Pasquale Scarlino, Jonne V Koski, Andrew Dzurak, Chih-Hwan Yang, Jun Yoneda, Ferdinand Kuemmeth, Hendrik Bluhm, Jarryd Pla, Charles Hill, Joe Salfi, Akira Oiwa, Juha T Muhonen, Ewold Verhagen, Matthew D LaHaye, Hyun Ho Kim, Adam W Tsen, Dimitrie Culcer, Attila Geresdi , et al. (4 additional authors not shown)

Abstract: Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu… ▽ More Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Report number: NBI QDev 2021

Journal ref: Nanotechnology 32, 162003 (2021)

Non-galvanic calibration and operation of a quantum dot thermometer

Authors: J. M. A. Chawner, S. Barraud, M. F. Gonzalez-Zalba, S. Holt, E. A. Laird, Yu. A. Pashkin, J. R. Prance

Abstract: A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting… ▽ More A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting the calibrated physical model to new phase data. The thermometer can operate at the transition between thermally broadened and lifetime broadened regimes, and outside the temperatures used in calibration. Electron thermometry was performed at temperatures between $3.0\,\mathrm{K}$ and $1.0\,\mathrm{K}$, in both a $1\,\mathrm{K}$ cryostat and a dilution refrigerator. The experimental setup allows fast electron temperature readout with a sensitivity of $4.0\pm0.3 \, \mathrm{mK}/\sqrt{\mathrm{Hz}}$, at Kelvin temperatures. The non-galvanic calibration process gives a readout of physical parameters, such as the quantum dot lever arm. The demodulator used for reflectometry readout is readily available and very affordable. △ Less

Submitted 28 January, 2021; v1 submitted 2 December, 2020; originally announced December 2020.

Comments: 6 pages, 6 figures, supplementary included

Journal ref: Phys. Rev. Applied 15, 034044 (2021)

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Authors: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A. S. Dzurak

Abstract: Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in compu… ▽ More Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology. △ Less

Submitted 8 April, 2023; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: Comments welcome

Journal ref: Nature Electronics 4, 872, 2021

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Authors: **gyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem… ▽ More We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout

Authors: Vahid Derakhshan Maman, M. F. Gonzalez-Zalba, András Pályi

Abstract: Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits, singlet-triplet spin qubits, and Majorana qubits. In our model, we account for readout errors due to slow charge noise, and due to overdriving, when a too strong probe is ca… ▽ More Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits, singlet-triplet spin qubits, and Majorana qubits. In our model, we account for readout errors due to slow charge noise, and due to overdriving, when a too strong probe is causing errors. A key result is that for charge and spin qubits, the readout fidelity saturates at large probe strengths, whereas for Majorana qubits, there is an optimal probe strength which provides a maximized readout fidelity. We also point out the existence of severe readout errors appearing in a resonance-like fashion as the pulse strength is increased, and show that these errors are related to probe-induced multi-photon transitions. Besides providing practical guidelines toward optimized readout, our study might also inspire ways to use gate reflectometry for device characterization. △ Less

Submitted 22 June, 2020; originally announced June 2020.

Comments: 10+3 pages, 5+1 figures

Journal ref: Phys. Rev. Applied 14, 064024 (2020)

Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures

Authors: Tsung-Yeh Yang, Andrea Ruffino, John Michniewicz, Yatao Peng, Edoardo Charbon, M. Fernando Gonzalez-Zalba

Abstract: In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance a… ▽ More In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance and subthreshold slope with respect to 300 K. In the quantum regime, all measured devices show Coulomb blockade. This is explained by the formation of quantum dots in the channel, for which a model is proposed. The variability in parameters, important for quantum computing scaling, is also quantified. Our results show that bulk 40-nm node MOSFETs can be readily used for the co-integration of cryo-CMOS classical-quantum circuits at deep cryogenic temperatures and that the variability approaches the uniformity requirements to enable shared control. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling

Authors: V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal, L. Hutin, B. Bertrand, Lisa Ibberson, M. F. Gonzalez-Zalba, J. Li, Y. -M. Niquet, M. Vinet, J. J. L. Morton

Abstract: Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w… ▽ More Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. △ Less

Submitted 12 June, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures, 57 cites. v3: added acknowledges

Journal ref: PRX Quantum 2, 010353 (2021)

Large dispersive interaction between a CMOS double quantum dot and microwave photons

Authors: David J. Ibberson, Theodor Lundberg, James A. Haigh, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Chang-Min Lee, Nadia A. Stelmashenko, Giovanni A. Oakes, Laurence Cochrane, Jason W. A. Robinson, Maud Vinet, M. Fernando Gonzalez-Zalba, Lisa A. Ibberson

Abstract: We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device,… ▽ More We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems. △ Less

Submitted 14 May, 2021; v1 submitted 1 April, 2020; originally announced April 2020.

Comments: Accepted manuscript

Journal ref: PRX Quantum 2, 020315 (2021)

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Authors: Theodor Lundberg, **g Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quan… ▽ More Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~μs$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems. △ Less

Submitted 22 October, 2019; originally announced October 2019.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. X 10, 041010 (2020)

A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Authors: Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba

Abstract: The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in whic… ▽ More The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in which the amplitude of the capacitance changes and the voltage period can be tuned by electric means. The device concept is based on double-passage Landau-Zener-Stückelberg-Majorana interferometry of a coupled two-level system that is further tunnel-coupled to an electron reservoir. We test this model experimentally by performing Landau-Zener-Stückelberg-Majorana interferometry in a single-electron double quantum dot coupled to an electron reservoir and show that the voltage period of the capacitance oscillations is directly proportional to the excitation frequency and that the amplitude of the oscillations depends on the dynamical parameters of the system: intrinsic relaxation and coherence time, as well as the tunneling rate to the reservoir. Our work opens up an opportunity to use the non-linear capacitance of double quantum dots to obtain enhanced device functionalities. △ Less

Submitted 15 August, 2019; v1 submitted 12 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 205425 (2019)

Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Authors: S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C. -M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-… ▽ More Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: Wrong figure reference corrected

Journal ref: Phys. Rev. Lett. 124, 067701 (2020)

Small-signal equivalent circuit for double quantum dots at low-frequencies

Authors: M. Esterli, R. M. Otxoa, M. F. Gonzalez-Zalba

Abstract: Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semi-classical small-signal model approach to replace complex single-electron devices by linear parametric circuit components that could be readily used in analogue circuit simulators. Our approach is based on weakly-driven quantum two-leve… ▽ More Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semi-classical small-signal model approach to replace complex single-electron devices by linear parametric circuit components that could be readily used in analogue circuit simulators. Our approach is based on weakly-driven quantum two-level systems and here we use it to calculate the finite-frequency impedance of a single-electron double quantum dot (DQD). We find that the total impedance is composed by three elements that were previously considered separately: a dissipative term, corresponding to the Sisyphus resistance, and two dispersive terms, comprised of the quantum and tunneling capacitance. Finally, we combine the parametric terms to understand the interaction of the DQD with a slow classical electrical oscillator which finds applications in non-resonant state readout of quantum bits and parametric amplification. △ Less

Submitted 21 December, 2018; v1 submitted 14 December, 2018; originally announced December 2018.

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Authors: S. Schaal, A. Rossi, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while kee** the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and ap… ▽ More Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while kee** the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Journal ref: Nature Electronics (2019)

Gate-based single-shot readout of spins in silicon

Authors: A. West, B. Hensen, A. Jouan, T. Tanttu, C. H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. E. Hudson, A. Morello, D. J. Reilly, A. S. Dzurak

Abstract: Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f… ▽ More Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor. △ Less

Submitted 1 October, 2018; v1 submitted 6 September, 2018; originally announced September 2018.

Journal ref: Nature Nanotechnology 14, 437-441 (2019)

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Authors: David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba

Abstract: We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To… ▽ More We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To assess the impact on performance of different tuning conditions, we connect a quantum dot in a silicon nanowire field-effect transistor to the resonator, and measure changes in the device capacitance caused by cyclic electron tunneling. At 250 mK, we obtain an equivalent charge sensitivity of $43~μe / \sqrt{\text{Hz}}$ when the resonator and the line are impedance-matched and show that this sensitivity can be further improved to $31~μe / \sqrt{\text{Hz}}$ by re-tuning the resonator. We understand this improvement by using an equivalent circuit model and demonstrate that for maximum sensitivity to capacitance changes, in addition to impedance matching, a high-quality resonator with low parasitic capacitance is desired. △ Less

Submitted 27 March, 2019; v1 submitted 20 July, 2018; originally announced July 2018.

Comments: Includes supplementary information

Journal ref: Applied Physics Letters 114, 123501 (2019)

Electric-field tuning of the valley splitting in silicon corner dots

Authors: David J. Ibberson, Léo Bourdet, José C. Abadillo-Uriel, Imtiaz Ahmed, Sylvain Barraud, María J. Calderón, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley s… ▽ More We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits. △ Less

Submitted 23 July, 2018; v1 submitted 21 May, 2018; originally announced May 2018.

Comments: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37)

Journal ref: Applied Physics Letters 113, 053104 (2018)

Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor

Authors: Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba

Abstract: Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single ele… ▽ More Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_\text{B}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits. △ Less

Submitted 30 May, 2018; v1 submitted 9 May, 2018; originally announced May 2018.

Journal ref: Communications Physics volume 1, Article number: 66 (2018)

Radio-frequency capacitive gate-based sensing

Authors: Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Develo** fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting… ▽ More Develo** fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $μ$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout. △ Less

Submitted 29 January, 2018; originally announced January 2018.

Report number: 014018

Journal ref: Phys. Rev. Applied 10, 014018 (2018)

Solid-state qubits

Authors: M. Fernando Gonzalez-Zalba

Abstract: The quantum world is fascinating. It presents a description of nature that defies our most rooted concepts about what reality is. For example, quantum objects possess \lq\lq spooky\rq\rq\ properties that allow them to be in multiple places at the same time, to move in different directions simultaneously, or to exist and not to exist. In other words, to live several parallel stories. Making use of… ▽ More The quantum world is fascinating. It presents a description of nature that defies our most rooted concepts about what reality is. For example, quantum objects possess \lq\lq spooky\rq\rq\ properties that allow them to be in multiple places at the same time, to move in different directions simultaneously, or to exist and not to exist. In other words, to live several parallel stories. Making use of these parallel stories to compute is the realm of quantum computation, a world in which information is processed using the laws of quantum physics. Nowadays, quantum computers are an object of an extensive experimental and theoretical research, since it is known that, on paper, these can solve many of the current computational challenges. These are the problems that even the most sophisticated supercomputers of today, or tomorrow, will not be able to solve. △ Less

Submitted 20 January, 2018; originally announced January 2018.

Comments: This English version is a translation of the article "Qubits de estado solido" originally written in Spanish

Journal ref: Revista Espanola de Fisica, Vol 31, No 3, 4-8 (2017)

A silicon-based single-electron interferometer coupled to a fermionic sea

Authors: Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Ruben M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the… ▽ More We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor. △ Less

Submitted 31 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 045405 (2018)

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Authors: S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum d… ▽ More Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $δq=165\, μe \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor. △ Less

Submitted 14 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Applied 9, 054016 (2018)

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Authors: A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba

Abstract: Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we per… ▽ More Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response. △ Less

Submitted 23 May, 2017; v1 submitted 3 October, 2016; originally announced October 2016.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 212101 (2017)

Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot

Authors: T. Kobayashi, J. van der Heijden, M. G. House, S. J. Hile, Pablo Asshoff, M. F. Gonzalez-Zalba, M. Vinet, M. Y. Simmons, S. Rogge

Abstract: We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley spl… ▽ More We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot. △ Less

Submitted 13 April, 2016; originally announced April 2016.

Comments: 10 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 152102 (2016)

Quantum and Tunnelling Capacitance in Charge and Spin Qubits

Authors: R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba

Abstract: We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high-frequencies. We find that in general the total capacitance of the system consists of two state-dependent terms: The quantum capacitance arising from adiabatic charge motion and the tunnelling capacitance that appears when repopulation occurs at a rate comparable o… ▽ More We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high-frequencies. We find that in general the total capacitance of the system consists of two state-dependent terms: The quantum capacitance arising from adiabatic charge motion and the tunnelling capacitance that appears when repopulation occurs at a rate comparable or faster than the probing frequency. The analysis of the capacitance lineshape as a function of externally controllable variables offers a way to characterize the qubits' charge and spin state as well as relevant system parameters such as charge and spin relaxation times, tunnel coupling, electron temperature and electron g-factor. Overall, our analysis provides a formalism to understand dispersive qubit-resonator interactions which can be applied to high-sensitivity and non-invasive quantum-state readout. △ Less

Submitted 16 August, 2016; v1 submitted 11 April, 2016; originally announced April 2016.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 95, 045414 (2017)

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Authors: A. C. Betz, M. L. V. Tagliaferri, M. Vinet, M. Broström, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba

Abstract: We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitanc… ▽ More We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture. △ Less

Submitted 11 March, 2016; originally announced March 2016.

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Authors: M. Fernando Gonzalez-Zalba, Sergey N. Shevchenko, Sylvain Barraud, J. Robert Johansson, Andrew J. Ferguson, Franco Nori, Andreas C. Betz

Abstract: Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge o… ▽ More Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Journal ref: Nano Letters 16 (3), 1614 (2016)

Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Authors: A. C. Betz, R. Wacquez, M. Vinet, X. Jehl, A L. Saraiva, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba

Abstract: We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via… ▽ More We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $Δ_{vo}$ of 145 $μ$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics. △ Less

Submitted 1 May, 2015; v1 submitted 12 April, 2015; originally announced April 2015.

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

Authors: M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson, J. Wunderlich

Abstract: We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coul… ▽ More We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Authors: M. Urdampilleta, A. Chatterjee, C. C. Lo, T. Kobayashi, J. Mansir, S. Barraud, A. C. Betz, S. Rogge, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin… ▽ More Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus. △ Less

Submitted 19 March, 2015; v1 submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures, supplementary information (3 pages, 4 figures)

Journal ref: Phys. Rev. X 5, 031024 (2015)

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Authors: C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, J. J. L. Morton

Abstract: Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as pa… ▽ More Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 13 pages, 4 figures