Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
Authors:
R. D. Gonzalez Betancourt,
J. Zubáč,
R. J. Gonzalez-Hernandez,
K. Geishendorf,
Z. Šobáň,
G. Springholz,
K. Olejník,
L. Šmejkal,
J. Sinova,
T. Jungwirth,
S. T. B. Goennenwein,
A. Thomas,
H. Reichlová,
J. Železný,
D. Kriegner
Abstract:
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli…
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The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
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Submitted 23 January, 2023; v1 submitted 13 December, 2021;
originally announced December 2021.
