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MoS$_2$ 2D-polymorphs as a Li-/Na-ion batteries: 1T' vs 2H phases
Authors:
J. W. González,
E. Flórez,
J. D. Correa
Abstract:
In this study, we compare the performance of two phases of MoS$_2$ monolayers: 1T' and 2H, about their ability to adsorb lithium and sodium ions. Employing the density functional theory and molecular dynamics, we include the ion concentration to analyze the electronic structure, ion kinetics, and battery performance. The pristine 2H-MoS$_2$ monolayer is the ground state. However, the charge transf…
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In this study, we compare the performance of two phases of MoS$_2$ monolayers: 1T' and 2H, about their ability to adsorb lithium and sodium ions. Employing the density functional theory and molecular dynamics, we include the ion concentration to analyze the electronic structure, ion kinetics, and battery performance. The pristine 2H-MoS$_2$ monolayer is the ground state. However, the charge transfer effects above a critical ion concentration yields a stability change, where the 1T'-MoS$_2$ monolayer with adsorbed ions becomes more stable than the 2H counterpart. The diffusion of ions onto the 1T' monolayer is anisotropic, being more efficient at ion adsorption than the 2H phase. Finally, we calculate the open circuit voltage and specific capacity, confirming that the 1T'-MoS$_2$ phase has great potential for develo** lithium/sodium ion batteries.
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Submitted 4 December, 2023; v1 submitted 29 August, 2023;
originally announced August 2023.
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Ca$_{3}$Ru$_{2}$O$_{7}$: Interplay among degrees of freedom and the role of the exchange-correlation
Authors:
A. M León,
J. W. González,
H. Rosner
Abstract:
Ca$_{3}$Ru$_{2}$O$_{7}$ is a fascinating material that displays physical properties governed by spin-orbit interactions and structural distortions, showing a wide range of remarkable electronic phenomena. Here, we present a density-functional-based analysis of the interplay among degrees of freedom, such as magnetism, Coulomb repulsion (Hubbard-U), and structural degrees of freedom, considering tw…
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Ca$_{3}$Ru$_{2}$O$_{7}$ is a fascinating material that displays physical properties governed by spin-orbit interactions and structural distortions, showing a wide range of remarkable electronic phenomena. Here, we present a density-functional-based analysis of the interplay among degrees of freedom, such as magnetism, Coulomb repulsion (Hubbard-U), and structural degrees of freedom, considering two exchange-correlation methods: Local-Density Approximation (LDA) and Perdew-Burke-Ernzerhof revised for solids (PBEsol). Our goal is twofold: first, to provide a brief overview of the current state of the art on this compound underpinning the last proposed theoretical models and experimental research, and second, to give another view to model the electronic properties compared with the previous theoretical models. Our findings show that Ca$_{3}$Ru$_{2}$O$_{7}$ displays several electronic states (metal, semimetal, and narrow insulator) as a function of Hubbard-U while it exhibits structural transition depending on the functional. We disentangle the effect of the different degrees of freedom involved, clarifying the role of exchange-correlation in the observed electronic and structural transitions.
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Submitted 19 October, 2023; v1 submitted 25 October, 2022;
originally announced October 2022.
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V$_2$C-based lithium batteries: The influence of magnetic phase and Hubbard interaction
Authors:
Jhon W. González,
Sanber Vizcaya,
Eric Suárez Morell
Abstract:
MXenes are a family of two-dimensional materials that could be attractive for use as electrodes in lithium batteries due to their high specific capacity. For this purpose, it is necessary to evaluate magnitudes such as the lithium adsorption energy and the magnitude of the open-circuit voltage for different lithium concentrations. In this paper, we show through first principles calculations that i…
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MXenes are a family of two-dimensional materials that could be attractive for use as electrodes in lithium batteries due to their high specific capacity. For this purpose, it is necessary to evaluate magnitudes such as the lithium adsorption energy and the magnitude of the open-circuit voltage for different lithium concentrations. In this paper, we show through first principles calculations that in a V$_2$C monolayer we must consider the high correlation between the electrons belonging to vanadium to obtain correct results of these quantities. We include this correlation employing the Hubbard coupling parameter obtained by a linear response method. We found that the system is antiferromagnetic and that the quantities studied depend on the magnetic phase considered. Indirectly, experimental results could validate the theoretical value of the theoretical Hubbard parameter.
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Submitted 10 April, 2022;
originally announced April 2022.
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Strain-controlled thermoelectric properties of phosphorene hetero-bilayers
Authors:
J. W. González
Abstract:
The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and to the uniaxial strain direction. Herein, we take advantage of the reversible semiconductor-metal transition observed in certain monolayers to propose a hetero-bilayer device…
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The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and to the uniaxial strain direction. Herein, we take advantage of the reversible semiconductor-metal transition observed in certain monolayers to propose a hetero-bilayer device. We propose to pill up phosphorene (layered black phosphorus) and carbon monosulfide monolayers. In the first, such transition appears for positive strain, while the second appears for negative strain. Our first-principle calculations show that depending on the direction of the applied uniaxial strain; it is possible to achieve reversible control in the layer that behaves as an electronic conductor while the other layer remains as a thermal conductor. The described strain-controlled selectivity could be used in the design of novel devices.
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Submitted 24 May, 2021;
originally announced May 2021.
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Metallic Carbon Nanotube Quantum Dots with Broken Symmetries as a Platform for Tunable Terahertz Detection
Authors:
G. Buchs,
M. Marganska,
J. W. González,
K. Eimre,
C. A. Pignedoli,
D. Passerone,
A. Ayuela,
O. Gröning,
D. Bercioux
Abstract:
Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great potential to build sensitive terahertz detectors usually based on photon-assisted tunnelling. A recently reported mechanism combining resonant quantum dot trans…
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Generating and detecting radiation in the technologically relevant range of the so-called terahertz gap ($0.1 - 10$ THz) is challenging because of a lack of efficient sources and detectors. Quantum dots in carbon nanotubes have shown great potential to build sensitive terahertz detectors usually based on photon-assisted tunnelling. A recently reported mechanism combining resonant quantum dot transitions and tunnelling barriers asymmetries results in a narrow linewidth photocurrent response with a large signal-to-noise ratio under weak THz radiation. That device was sensitive to one frequency, corresponding to transitions between equidistant quantized states. In this work we show, using numerical together with scanning tunnelling spectroscopy studies of a defect-induced metallic zigzag single-walled carbon nanotube quantum dot that simultaneously breaking various symmetries in metallic nanotube quantum dots of arbitrary chirality strongly relaxes the selection rules in the electric dipole approximation, and removes energy degeneracies. This leads to a richer set of allowed optical transitions spanning frequencies from 1 THz to several tens of THz, for a $\sim$10 nm quantum dot. Based on these findings, we propose a terahertz detector device based on a metallic single-walled carbon nanotube quantum dot defined by artificial defects. Depending on its length and contacts transparency, the operating regimes range from a high-resolution gate-tunable terahertz sensor to a broadband terahertz detector. Our calculations indicate that the device is largely unaffected by temperatures up to 100 K, making carbon nanotube quantum dots with broken symmetries a promising platform to design tunable terahertz detectors that could operate at liquid nitrogen temperatures.
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Submitted 14 May, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
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Strain-induced phase transition in CrI$_{3}$ bilayers
Authors:
Andrea Leon,
J. W. González,
J. Mejía-López,
F. Crasto de Lima,
E. Suárez Morell
Abstract:
A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magn…
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A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magnetic phase of the structure. A tensile strain stabilizes the antiferromagnetic phase, while a compressive strain turns the system ferromagnetic. We understood that behavior by looking at the relative displacement between layers due to the strain. We also study the evolution of the magnetic anisotropy, the magnetic exchange coupling between Cr atoms, and how the Curie temperature is affected by the strain.
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Submitted 21 February, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
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Complete reversal of the atomic unquenched orbital moment by a single electron
Authors:
R. Rejali,
D. Coffey,
J. Gobeil,
J. W. González,
F. Delgado,
A. F. Otte
Abstract:
The orbital angular moment of magnetic atoms adsorbed on surfaces is often quenched as a result of an anisotropic crystal field. Due to spin-orbit coupling, what remains of the orbital moment typically delineates the orientation of the electron spin. These two effects limit the scope of information processing based on these atoms to essentially only one magnetic degree of freedom: the spin. In thi…
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The orbital angular moment of magnetic atoms adsorbed on surfaces is often quenched as a result of an anisotropic crystal field. Due to spin-orbit coupling, what remains of the orbital moment typically delineates the orientation of the electron spin. These two effects limit the scope of information processing based on these atoms to essentially only one magnetic degree of freedom: the spin. In this work, we gain independent access to both the spin and orbital degrees of freedom of a single atom, inciting and probing excitations of each moment. By coordinating a single Fe atom atop the nitrogen site of the Cu$_2$N lattice, we realize a single-atom system with a large zero-field splitting--the largest reported for Fe atoms on surfaces--and an unquenched uniaxial orbital moment that closely approaches the free-atom value. We demonstrate a full reversal of the orbital moment through a single-electron tunneling event between the tip and Fe atom, a process that is mediated by a charged virtual state and leaves the spin unchanged. These results, which we corroborate using density functional theory and first-principles multiplet calculations, demonstrate independent control over the spin and orbital degrees of freedom in a single-atom system.
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Submitted 27 August, 2020; v1 submitted 1 October, 2019;
originally announced October 2019.
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Highly anisotropic thermoelectric properties of carbon sulfide monolayers
Authors:
Jhon W. González
Abstract:
Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by strain control on the basis of first-principles calculations. We consider uniaxial and biaxial tensile strain and we find a highly anisotropic electronic and ther…
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Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by strain control on the basis of first-principles calculations. We consider uniaxial and biaxial tensile strain and we find a highly anisotropic electronic and thermoelectonic responses depending on the direction of the applied strain. Our results indicate that strain-induced response could be an effective method to control the electronic response and the thermoelectric performance.
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Submitted 15 November, 2018;
originally announced November 2018.
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Thermopower of Graphene Nanoribbons in the Pseudodiffusive Regime
Authors:
Jhon W. González,
Luis Rosales,
Andrés Ayuela
Abstract:
Thermoelectric measurements for graphene ribbons are currently performed on samples that include atomic disorder via defects and irregular edges. In this work, we investigate the thermopower or Seebeck coefficient of graphene ribbons within the linear response theory and the Landauer formalism, and we consider the diffusive regime taken as a limit of the ribbon aspect ratio. We find that the therm…
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Thermoelectric measurements for graphene ribbons are currently performed on samples that include atomic disorder via defects and irregular edges. In this work, we investigate the thermopower or Seebeck coefficient of graphene ribbons within the linear response theory and the Landauer formalism, and we consider the diffusive regime taken as a limit of the ribbon aspect ratio. We find that the thermopower and the electronic conductivity depend not only on the aspect ratio, but also on chemical potential and temperature, which are set here as key parameters. The obtained numerical results with temperature and do** are brought into contact with the thermoelectric measurements on disordered graphene ribbons with good agreement.
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Submitted 8 September, 2018;
originally announced September 2018.
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Out-of-plane Enhanced Magnetic Anisotropy Energy in Ni$_{3}$Bz$_{3}$ molecule
Authors:
Tomás Alonso-Lanza,
Jhon W. González,
Faustino Aguilera-Granja,
Andrés Ayuela
Abstract:
Organometallic complexes formed by transition metals clusters and benzene molecules have already been synthesized, and in selected cases display magnetic properties controlled by external magnetic fields. We have studied Ni$_n$Bz$_n$ complexes made of nickel atoms surrounded by benzene molecules and here we focus specifically on the magnetic molecule Ni$_{3}$Bz$_{3}$. By means of calculations incl…
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Organometallic complexes formed by transition metals clusters and benzene molecules have already been synthesized, and in selected cases display magnetic properties controlled by external magnetic fields. We have studied Ni$_n$Bz$_n$ complexes made of nickel atoms surrounded by benzene molecules and here we focus specifically on the magnetic molecule Ni$_{3}$Bz$_{3}$. By means of calculations including relativistic spin-orbit terms, we show that this molecule reveals a large magnetic anisotropy energy of approximately 8 meV, found with the easy axis perpendicular to the metal atoms plane. Note that the matching bare Ni$_{3}$ cluster have similar magnetic anisotropy, however the easy axis is in-plane. Covering with benzene molecules is thus switching the easy axis from in-plane for Ni$_3$ to out-of-plane for Ni$_{3}$Bz$_{3}$. The large out-of-plane magnetic anisotropy of Ni$_{3}$Bz$_{3}$ suggests that this molecule could indeed be used as part in the design of molecular magnetic memories.
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Submitted 6 July, 2018; v1 submitted 20 October, 2017;
originally announced October 2017.
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Stacking change in MoS$_{2}$ bilayers induced by interstitial Mo impurities
Authors:
Natalia Cortés,
L. Rosales,
P. A. Orellana,
A. Ayuela,
J. W. González
Abstract:
We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS$_{2}$ bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB (doped). The occurrence of Mo impurities in different positions shows thei…
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We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS$_{2}$ bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trap** in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.
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Submitted 23 September, 2017;
originally announced October 2017.
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Ultrashort Mn-Mn Bonds in Organometallic Complexes
Authors:
Tomás Alonso-Lanza,
Jhon W. González,
Faustino Aguilera- Granja,
Andrés Ayuela
Abstract:
Manganese metallocenes larger than the experimentally produced sandwiched MnBz$_2$ compound are studied using several density functional theory methods. First, we show that the lowest energy structures have Mn clusters surrounded by benzene molecules, in so-called rice-ball structures. We then find a strikingly short bond length of 1.8 Å between pairs of Mn atoms, accompanied by magnetism depletio…
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Manganese metallocenes larger than the experimentally produced sandwiched MnBz$_2$ compound are studied using several density functional theory methods. First, we show that the lowest energy structures have Mn clusters surrounded by benzene molecules, in so-called rice-ball structures. We then find a strikingly short bond length of 1.8 Å between pairs of Mn atoms, accompanied by magnetism depletion. The ultrashort bond lengths are related to Bz molecules caging a pair of Mn atoms, leading to a Mn-Mn triple bond. This effect is also found when replacing benzenes by other molecules such as borazine or cyclopentadiene. The stability of the Mn-Mn bond for Mn$_2$Bz$_2$ is further investigated using dissociation energy curves. For each spin configuration, the energy versus distance plot shows different spin minima with barriers, which must be overcome to synthesize larger Mn-Bz complexes.
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Submitted 1 August, 2017; v1 submitted 14 March, 2017;
originally announced March 2017.
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Carbon Monosulfide Nanostructures: Chains Arrays, Monolayers, and Thin Films
Authors:
Tomás Alonso-Lanza,
Faustino Aguilera-Granja,
Jhon W. González,
Andrés Ayuela
Abstract:
Theoretical predictions have lead to the experimental synthesis of new low dimensional layered structures. Herein we show for the very first time that compounds of carbon monosulfide exhibit a great variety of layered nanostructures, such as chains arrays, monolayers, and thin films. We find that the chains arrays are the most stable because they are mainly dimensionality-driven by the $sp^2$ hybr…
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Theoretical predictions have lead to the experimental synthesis of new low dimensional layered structures. Herein we show for the very first time that compounds of carbon monosulfide exhibit a great variety of layered nanostructures, such as chains arrays, monolayers, and thin films. We find that the chains arrays are the most stable because they are mainly dimensionality-driven by the $sp^2$ hybridization of sulfur and carbon orbitals. Furthermore, the chains arrays are direct gap semiconductors. In contrast to thin films, the monolayers are stable at room temperature with a semiconductor phase followed in energy by a metallic phase. Then, we achieve a semiconductor-to-metal phase transition in carbon sulfur monolayers, which can be driven by strain engineering controlling conductivity and carrier mobility.
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Submitted 8 March, 2017;
originally announced March 2017.
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Tuning the Fermi velocity in Dirac materials with an electric field
Authors:
A. Diaz-Fernandez,
L. Chico,
J. W. Gonzalez,
F. Dominguez-Adame
Abstract:
Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles. Commonly denominated Dirac cones, these dispersion relations are considered to be their essential feature. These materials comprise quite diverse examples, such as graphene and topological insulators. Band-engineering techniques should aim to a full control of the parameter that c…
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Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles. Commonly denominated Dirac cones, these dispersion relations are considered to be their essential feature. These materials comprise quite diverse examples, such as graphene and topological insulators. Band-engineering techniques should aim to a full control of the parameter that characterizes the Dirac cones: the Fermi velocity. We propose a general mechanism that enables the fine-tuning of the Fermi velocity in Dirac materials in a readily accessible way for experiments. By embedding the sample in a uniform electric field, the Fermi velocity is substantially modified. We first prove this result analytically, for the surface states of a topological insulator/semiconductor interface, and postulate its universality to other Dirac materials. Then we check its correctness in carbon-based Dirac materials, namely graphene nanoribbons and nanotubes, thus showing the validity of our hypothesis in both continuum and tight-binding calculations and in different Dirac systems.
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Submitted 4 September, 2017; v1 submitted 27 February, 2017;
originally announced February 2017.
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Non-Collinearity in Small Magnetic Cobalt-Benzene Molecules
Authors:
J. W. González,
T. Alonso-Lanza,
F. Delgado,
F. Aguilera-Granja,
A. Ayuela
Abstract:
Organometallic clusters based on transition metal atoms are interesting because possible applications in spintronics and quantum information. In addition to the enhanced magnetism at the nanoscale, the organic ligands may provide a natural shield again unwanted magnetic interactions with the matrices required for applications. Here we show that the organic ligands may lead to non-collinear magneti…
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Organometallic clusters based on transition metal atoms are interesting because possible applications in spintronics and quantum information. In addition to the enhanced magnetism at the nanoscale, the organic ligands may provide a natural shield again unwanted magnetic interactions with the matrices required for applications. Here we show that the organic ligands may lead to non-collinear magnetic order as well as the expected quenching of the magnetic moments. We use different density functional theory (DFT) methods to study the experimentally relevant three cobalt atoms surrounded by benzene rings (Co$_3$Bz$_3$). We found that the benzene rings induce a ground state with non-collinear magnetization, with the magnetic moments localized on the cobalt centers and lying on the plane formed by the three cobalt atoms. We further analyze the magnetism of such a cluster using an anisotropic Heisenberg model where the involved parameters are obtained by a comparison with the DFT results. These results may also explain the recent observation of null magnetic moment of Co$_3$Bz$_3^+$. Moreover, we propose an additional experimental verification based on electron paramagnetic resonance.
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Submitted 8 March, 2017; v1 submitted 15 November, 2016;
originally announced November 2016.
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Electron Confinement Induced by Diluted Hydrogen-like Ad-atoms in Graphene Ribbons
Authors:
J. W. González,
L. Rosales,
M. Pacheco,
A. Ayuela
Abstract:
We report the electronic properties of two-dimensional systems made of graphene nanoribbons which are patterned with ad-atoms in two separated regions. Due to the extra electronic confinement induced by the presence of the impurities, we find resonant levels, quasi-bound and impurity-induced localized states, which determine the transport properties of the system. Regardless of the ad-atom distrib…
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We report the electronic properties of two-dimensional systems made of graphene nanoribbons which are patterned with ad-atoms in two separated regions. Due to the extra electronic confinement induced by the presence of the impurities, we find resonant levels, quasi-bound and impurity-induced localized states, which determine the transport properties of the system. Regardless of the ad-atom distribution in the system, we apply band-folding procedures to simple models and predict the energies and the spatial distribution of those impurity-induced states. We take into account two different scenarios: gapped graphene and the presence of randomly distributed ad-atoms in a low dilution regime. In both cases the defect-induced resonances are still detected. Our findings would encourage experimentalist to synthesize these systems and characterize their quasi-localized states employing, for instance, scanning tunneling spectroscopy (STS). Additionally, the resonant transport features could be used in electronic applications and molecular sensor devices.
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Submitted 30 July, 2015; v1 submitted 2 June, 2015;
originally announced June 2015.
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Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
Authors:
K. Kośmider,
J. W. González,
J. Fernández-Rossier
Abstract:
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves and pseudo potentials that yield large splitti…
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We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves and pseudo potentials that yield large splittings, between 3 and 30 meV. Second, we derive a tight-binding model, that permits to address the atomic origin of the splitting. The basis set of the model is provided by the maximally localized Wannier orbitals, obtained from the DFT calculation, and formed by 11 atomic-like orbitals corresponding to 5$d$ and 3$p$ orbitals of the transition metal (W,Mo) and chalcogenide (S,Se) atoms respectively. In the resulting Hamiltonian we can independently change the atomic spin-orbit coupling constant of the two atomic species at the unit cell, which permits to analyse their contribution to the spin splitting at the high symmetry points. We find that ---in contrast to the valence band--- both atoms give comparable contributions to the conduction band splittings. Given that these materials are most often $n-$doped, our findings are important for developments in TMD spintronics.
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Submitted 5 November, 2013; v1 submitted 31 October, 2013;
originally announced November 2013.
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Electronic transport of folded graphene nanoribbons
Authors:
Jhon W. González,
Mónica Pacheco,
Pedro Orellana,
Luis Brey,
Leonor Chico
Abstract:
We investigate the electronic transport properties of a folded graphene nanoribbon with monolayer nanoribbon contacts. We consider two possible foldings: either the nanoribbon can be folded onto itself in the shape of a hairpin with the nanoribbon leads at a $0^\circ$ angle, or the monolayer contacts have different directions, forming a $60^\circ$ angle. The system is described by a single $π$-ban…
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We investigate the electronic transport properties of a folded graphene nanoribbon with monolayer nanoribbon contacts. We consider two possible foldings: either the nanoribbon can be folded onto itself in the shape of a hairpin with the nanoribbon leads at a $0^\circ$ angle, or the monolayer contacts have different directions, forming a $60^\circ$ angle. The system is described by a single $π$-band nearest-neighbor tight-binding Hamiltonian taking into account curvature effects. We have found that for the case of a nanoribbon folded over itself the conductance oscillates from almost zero and a finite value depending on the coupling between contacts, whereas in the $60^\circ$ angle folding the conductance is only slightly perturbed, allowing for the connection of graphene nanoelectronic components in a variety of geometries.
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Submitted 10 July, 2013;
originally announced July 2013.
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Quantum Hall effect in gapped graphene heterojunctions
Authors:
J. L. Lado,
J. W. González,
J. Fernández-Rossier
Abstract:
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $Δ_1$ and $Δ_2$. We consider two main situations, $Δ_1=0,Δ_2\neq0$ and $Δ_1=-Δ_2$. They are different in a fundamental aspect: only the latter feature kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two terminal conductance of het…
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We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $Δ_1$ and $Δ_2$. We consider two main situations, $Δ_1=0,Δ_2\neq0$ and $Δ_1=-Δ_2$. They are different in a fundamental aspect: only the latter feature kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we quantify the robustness of kink states with respect to backscattering. Transport perpendicular to the boundary shows how interface states open a backscattering channel for the conducting edge states, spoiling the perfect conductance quantization featured by the homogeneously gapped graphene Hall bars. Our results can be relevant for the study of graphene deposited on hexagonal Boron-Nitride as well as to model graphene with an interaction-driven gapped phase with two equivalent phases separated by a domain wall.
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Submitted 31 July, 2013; v1 submitted 18 April, 2013;
originally announced April 2013.
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Graphene single electron transistor as a spin sensor for magnetic adsorbates
Authors:
J. W. González,
F. Delgado,
J. Fernández-Rossier
Abstract:
We study single electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms b…
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We study single electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms by which the adsorbate magnetic state can influence transport in a single electron transistor: by tuning the addition energy, by changing the tunneling rate and, in the case of spin polarized electrodes, through magnetoresistive effects. Whereas the first mechanism is always present, the others require that the electrode has either an energy or spin dependent density of states. We find that graphene dots are optimal systems to detect the spin state of a few magnetic centers.
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Submitted 6 February, 2013; v1 submitted 11 December, 2012;
originally announced December 2012.
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In-gap impurity states as the hallmark of the Quantum Spin Hall phase
Authors:
J. W. González,
J. Fernández-Rossier
Abstract:
We study the different response to an impurity of the two topologically different phases shown by a two dimensional insulator with time reversal symmetry, namely, the Quantum Spin Hall and the normal phase. We consider the case of graphene as a toy model that features the two phases driven, respectively, by intrinsic spin-orbit coupling and inversion symmetry breaking. We find that strictly normal…
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We study the different response to an impurity of the two topologically different phases shown by a two dimensional insulator with time reversal symmetry, namely, the Quantum Spin Hall and the normal phase. We consider the case of graphene as a toy model that features the two phases driven, respectively, by intrinsic spin-orbit coupling and inversion symmetry breaking. We find that strictly normalizable in-gap impurity states only occur in the Quantum Spin Hall phase and carry dissipationless current whose quirality is determined by the spin and pseudospin of the residing electron. Our results imply that topological order can be unveiled by local probes of defect states.
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Submitted 16 May, 2012;
originally announced May 2012.
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Transport properties of graphene quantum dots
Authors:
Jhon W. Gonzalez,
Monica Pacheco,
Luis Rosales,
Pedro Orellana
Abstract:
In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a single-band tight binding Hamiltonian and the Green's function formalism using real space renormalization techniques. We show calculations of the local density of sta…
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In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a single-band tight binding Hamiltonian and the Green's function formalism using real space renormalization techniques. We show calculations of the local density of states, linear conductance and I-V characteristics. Our results depict a resonant behavior of the conductance in the quantum dot structures which can be controlled by changing geometrical parameters such as the nanoribbon segments widths and relative distance between them. By applying a gate voltage on determined regions of the structure, it is possible to modulate the transport response of the systems. We show that negative differential resistance can be obtained for low values of gate and bias voltages applied.
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Submitted 4 April, 2011;
originally announced April 2011.
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Bound states in the continuum in graphene quantum dot structures
Authors:
J. W. Gonzalez,
M. Pacheco,
L. Rosales,
P. A. Orellana
Abstract:
The existence of bound states in the continuum was predicted at the dawn of quantum mechanics by von Neumann and Wigner. In this work we discuss the mechanism of formation of these exotic states and the feasibility to observe them experimentally in symmetrical heterostructures composed by segments of graphene ribbons with different widths forming a graphene quantum dot. We identify the existence o…
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The existence of bound states in the continuum was predicted at the dawn of quantum mechanics by von Neumann and Wigner. In this work we discuss the mechanism of formation of these exotic states and the feasibility to observe them experimentally in symmetrical heterostructures composed by segments of graphene ribbons with different widths forming a graphene quantum dot. We identify the existence of bound states in the continuum in these graphene quantum dot systems by means of local density of states and electronic conductance calculations.
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Submitted 14 September, 2010;
originally announced September 2010.
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Gate-controlled conductance through bilayer graphene ribbons
Authors:
J. W. González,
H. Santos,
E. Prada,
L. Brey,
L. Chico
Abstract:
We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making po…
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We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making possible the control of the electronic transmission by an external parameter.
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Submitted 19 August, 2010;
originally announced August 2010.
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Electronic transport through bilayer graphene flakes
Authors:
J. W. Gonzalez,
H. Santos,
M. Pacheco,
L. Chico,
L. Brey
Abstract:
We investigate the electronic transport properties of a bilayer graphene flake contacted by two monolayer nanoribbons. Such a finite-size bilayer flake can be built by overlap** two semiinfinite ribbons or by depositing a monolayer flake onto an infinite nanoribbon. These two structures have a complementary behavior, that we study and analyze by means of a tight-binding method and a continuum Di…
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We investigate the electronic transport properties of a bilayer graphene flake contacted by two monolayer nanoribbons. Such a finite-size bilayer flake can be built by overlap** two semiinfinite ribbons or by depositing a monolayer flake onto an infinite nanoribbon. These two structures have a complementary behavior, that we study and analyze by means of a tight-binding method and a continuum Dirac model. We have found that for certain energy ranges and geometries, the conductance of these systems oscillates markedly between zero and the maximum value of the conductance, allowing for the design of electromechanical switches. Our understanding of the electronic transmission through bilayer flakes may provide a way to measure the interlayer hop** in bilayer graphene.
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Submitted 27 August, 2010; v1 submitted 18 February, 2010;
originally announced February 2010.
