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Infrared magneto-spectroscopy of graphite in tilted fields
Authors:
N. A. Goncharuk,
L. Nadvornik,
C. Faugeras,
M. Orlita,
L. Smrcka
Abstract:
The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where th…
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The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where the charge carriers behave as massless Dirac fermions. The observed behavior is attributed to the lifting of the twofold degeneracy of Landau levels at the H point - a degeneracy which in graphite complements the standard spin and valley degeneracies typical of graphene.
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Submitted 13 August, 2012;
originally announced August 2012.
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Tight-binding description of Landau levels of graphite in tilted magnetic fields
Authors:
Nataliya A. Goncharuk,
Ludvik Smrcka
Abstract:
The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields is studied theoretically. The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the structure of Landau levels. We show that while the orbital effect of the in-plane component of the magnetic field is negligible for massive Dirac fermions in the vicinity of the K p…
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The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields is studied theoretically. The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the structure of Landau levels. We show that while the orbital effect of the in-plane component of the magnetic field is negligible for massive Dirac fermions in the vicinity of the K point of the graphite Brillouin zone, at the H point it leads to the experimentally observable splitting of Landau levels, which grows approximately linearly with the in-plane field intensity.
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Submitted 20 October, 2011; v1 submitted 4 August, 2011;
originally announced August 2011.
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Electronic properties of graphite in tilted magnetic fields
Authors:
Nataliya A. Goncharuk,
Ludvik Smrcka
Abstract:
The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the electronic structure of Bernal-stacked graphite subject to tilted magnetic fields. We show that while the presence of the in-plane component of the magnetic field has a negligible effect on the Landau level structure at the K point of the graphite Brillouin zone, at the H point it leads to th…
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The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the electronic structure of Bernal-stacked graphite subject to tilted magnetic fields. We show that while the presence of the in-plane component of the magnetic field has a negligible effect on the Landau level structure at the K point of the graphite Brillouin zone, at the H point it leads to the experimentally observable splitting of Landau levels which grows approximately linearly with the in-plane field intensity.
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Submitted 4 May, 2011;
originally announced May 2011.
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From laterally modulated two-dimensional electron gas towards artificial graphene
Authors:
L. Nadvornik,
M. Orlita,
N. A. Goncharuk,
L. Smrcka,
V. Novak,
V. Jurka,
K. Hruska,
Z. Vyborny,
Z. R. Wasilewski,
M. Potemski,
K. Vyborny
Abstract:
Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral…
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Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems.
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Submitted 16 December, 2011; v1 submitted 28 April, 2011;
originally announced April 2011.
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Pre-edge XANES structure of Mn in (Ga,Mn)As
Authors:
N. A. Goncharuk,
J. Kucera,
L. Smrcka
Abstract:
The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp…
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The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp distinction between the spectra simulated for the substitutional and interstitial Mn defects which is determined mainly by the second nearest neighbor ligands. A single feature is obtained for the substitutional Mn impurity, whereas two peaks appear for both types of interstitial defects. An interpretation of the pre-edge features was proposed.
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Submitted 23 March, 2010;
originally announced March 2010.
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Gate-induced magneto-oscillation phase anomalies in graphene bilayers
Authors:
N. A. Goncharuk,
L. Smrcka
Abstract:
The magneto-oscillations in graphene bilayers are studied in the vicinity of the K and K' points of the Brillouin zone within the four-band continuum model ased on the simplest tight-binding approximation involving only the nearest neighbor interactions. The model is employed to construct Landau plots for a variety of carrier concentrations and bias strengths between the graphene planes. The quant…
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The magneto-oscillations in graphene bilayers are studied in the vicinity of the K and K' points of the Brillouin zone within the four-band continuum model ased on the simplest tight-binding approximation involving only the nearest neighbor interactions. The model is employed to construct Landau plots for a variety of carrier concentrations and bias strengths between the graphene planes. The quantum-mechanical and quasiclassical approaches are compared. We found that the quantum magneto-oscillations are only asymptotically periodic and reach the frequencies predicted quasiclassically for high indices of Landau levels. In unbiased bilayers the phase of oscillations is equal to the phase of massive fermions. Anomalous behavior of oscillation phases was found in biased bilayers with broken inversion symmetry. The oscillation frequencies again tend to quasiclassically predicted ones, which are the same for $K$ and $K'$, but the quantum approach yields the gate-tunable corrections to oscillation phases, which differ in sign for K and K'. These valley-dependent phase corrections give rise, instead of a single quasiclassical series of oscillations, to two series with the same frequency but shifted in phase.
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Submitted 22 March, 2010; v1 submitted 11 January, 2010;
originally announced January 2010.
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On the phase of magneto-oscillations in graphite
Authors:
L. Smrcka,
N. A. Goncharuk
Abstract:
The problem of Dirac fermions in graphite subject to a perpendicular magnetic field is studied. We show analytically that the weak inter-layer interaction between the graphene sheets leads to anomalies in the Shubnikov-de Haas and de Haas-van Alphen magneto-oscillations governed by the orbits around extremal cross-sections of the graphite Fermi surface. The calculation of the Landau plot perform…
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The problem of Dirac fermions in graphite subject to a perpendicular magnetic field is studied. We show analytically that the weak inter-layer interaction between the graphene sheets leads to anomalies in the Shubnikov-de Haas and de Haas-van Alphen magneto-oscillations governed by the orbits around extremal cross-sections of the graphite Fermi surface. The calculation of the Landau plot performed within a four band continuum model reveals that magneto-oscillations are aperiodic, except of the case of vanishing inter-layer interaction at the H point of the graphite Brillouin zone. Also for all other orbits along the H-K-H edge the magneto-oscillations are only asymptotically periodic in the quasi-classical limit, with the phase corresponding to massive fermions.
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Submitted 27 April, 2009;
originally announced April 2009.
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K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As
Authors:
N. A. Goncharuk,
L. Smrcka,
J. Kucera,
K. Olejnik,
V. Novak,
Z. Matej,
L. Nichtova,
V. Holy
Abstract:
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial…
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This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing.
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Submitted 23 March, 2010; v1 submitted 7 May, 2008;
originally announced May 2008.
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Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling
Authors:
L. Smrcka,
N. A. Goncharuk,
P. Svoboda,
P. Vasek,
Yu. Krupko,
W. Wegscheider
Abstract:
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkab…
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We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.
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Submitted 25 July, 2007;
originally announced July 2007.
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Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations
Authors:
L. Smrcka,
N. A. Goncharuk,
M. Orlita,
R. Grill
Abstract:
We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Blo…
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We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Bloch oscillations, if the electric field is oriented perpendicularly to both the sample plane and the magnetic field. The electric field applied in-plane (but perpendicularly to the magnetic field) yields the step-like electron energy spectrum, corresponding to the magnetic-field-tunable oscillations alternative to the Bloch ones.
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Submitted 25 July, 2007;
originally announced July 2007.
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Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices
Authors:
N. A. Goncharuk,
L. Smrcka,
P. Svoboda,
P. Vasek,
J. Kucera,
Yu. Krupko,
W. Wegscheider
Abstract:
The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlatti…
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The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.
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Submitted 31 May, 2007;
originally announced May 2007.
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Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields
Authors:
L. Smrčka,
P. Vašek,
P. Svoboda,
N. A. Goncharuk,
O. Pacherová,
Yu. Krupko,
Y. Sheikin
Abstract:
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to r…
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The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
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Submitted 14 October, 2005;
originally announced October 2005.
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Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
Authors:
T. Jungwirth,
K. Y. Wang,
J. Masek,
K. W. Edmonds,
Jurgen Konig,
Jairo Sinova,
M. Polini,
N. A. Goncharuk,
A. H. MacDonald,
M. Sawicki,
R. P. Campion,
L. X. Zhao,
C. T. Foxon,
B. L. Gallagher
Abstract:
We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temp…
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We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga do** in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.
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Submitted 9 May, 2005;
originally announced May 2005.
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Electronic Structure of Three-Dimensional Superlattices Subject to Tilted Magnetic Fields
Authors:
N. A. Goncharuk,
L. Smrcka,
J. Kucera,
K. Vyborny
Abstract:
Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-indepe…
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Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-independent rigid body in k-space and periods of oscillations are related to extremal cross-sections of the Fermi surface cut by planes perpendicular to the magnetic-field direction. We point out cases where the quasi-classical treatment fails and propose a simple tight-binding fully-quantum-mechanical model of the superlattice electronic structure.
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Submitted 25 February, 2005;
originally announced February 2005.
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Cyclotron Resonance Study of the Two-Dimensional Electron Layers and Double-Layers in Tilted Magnetic Fields
Authors:
Nataliya A. Goncharuk,
Ludvik Smrcka,
Jan Kucera
Abstract:
The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-l…
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The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-layer systems can be realized in a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results are compared to experimental data.
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Submitted 22 September, 2003; v1 submitted 12 June, 2003;
originally announced June 2003.
