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Showing 1–1 of 1 results for author: Gomaa, M M

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  1. Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction

    Authors: J. Papierska, A. Ciechan, P. Bogusławski, M. Boshta, M. M. Gomaa, E. Chikoidze, Y. Dumont, A. Drabińska, H. Przybylińska, A. Gardias, J. Szczytko, A. Twardowski, M. Tokarczyk, G. Kowalski, B. Witkowski, K. Sawicki, W. Pacuski, M. Nawrocki, J. Suffczyński

    Abstract: Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient… ▽ More

    Submitted 2 December, 2016; v1 submitted 3 March, 2016; originally announced March 2016.

    Comments: 17 pages, 10 figures

    Journal ref: Phys. Rev. B 94, 224414 (2016)