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Characterization of SiPM Performance in a Small Satellite in Low Earth Orbit using LabOSat-01
Authors:
Lucas Finazzi,
Federico Izraelevitch,
Mariano Barella,
Fernando Gomez Marlasca,
Gabriel Sanca,
Federico Golmar
Abstract:
In this work, the performance of SensL MicroFC-60035 SiPM devices was studied during a 1460-day mission in Low Earth Orbit (LEO) using the LabOSat-01 characterization payload. Two of these platforms, carrying two SiPMs each, were integrated into the ÑuSat-7 satellite (COSPAR-ID: 2020-003B). Analysis revealed that these SiPMs experienced an increase in dark current over time due to damage from trap…
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In this work, the performance of SensL MicroFC-60035 SiPM devices was studied during a 1460-day mission in Low Earth Orbit (LEO) using the LabOSat-01 characterization payload. Two of these platforms, carrying two SiPMs each, were integrated into the ÑuSat-7 satellite (COSPAR-ID: 2020-003B). Analysis revealed that these SiPMs experienced an increase in dark current over time due to damage from trapped and solar proton radiation. The total ionizing dose received by the payload and the SiPMs was measured using p-MOSFET dosimeters, with a resulting value of 5 Gy, or a 1 MeV neutron equivalent fluence of $φ_n = 5 \cdot 10^9$ n/cm$^2$. The dark current was observed to increase up to 500 times. Parameters such as Gain and Photon Detection Efficiency remained unchanged throughout the mission. These findings align with previous performance reports involving different SiPMs irradiated with various particles and energies.
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Submitted 10 July, 2024;
originally announced July 2024.
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Silicon Photomultipliers for Detection of Photon Bunching Signatures
Authors:
Lucas Finazzi,
Federico Izraelevitch,
Alexis Luszczak,
Thomas Huber,
Andreas Haungs,
Federico Golmar
Abstract:
In this work, photon bunching from LED light was observed for the first time using SiPMs. The bunching signature was observed with a significance of $7.3~σ$ using 97~hs of data. The light was spectrally filtered using a 1~nm bandpass filter and an Etalon filter to ensure temporal coherence of the field and its coherence time was measured to be $τ_C = (19 \pm 2)$~ps. The impact of SiPM non-idealiti…
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In this work, photon bunching from LED light was observed for the first time using SiPMs. The bunching signature was observed with a significance of $7.3~σ$ using 97~hs of data. The light was spectrally filtered using a 1~nm bandpass filter and an Etalon filter to ensure temporal coherence of the field and its coherence time was measured to be $τ_C = (19 \pm 2)$~ps. The impact of SiPM non-idealities in these kinds of measurements is explored, and we describe the methodology to process SiPM analog waveforms and the event selection used to mitigate these non-idealities.
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Submitted 25 June, 2024; v1 submitted 2 January, 2024;
originally announced January 2024.
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Collective electrical response of simulated memristive arrays using SPICE
Authors:
G. A. Sanca,
F. Di Francesco,
F. Golmar,
C. Quinteros
Abstract:
Self-assembled structures are possible solutions to the problem of increasing the density and connectivity of memristive units in massive arrays. Although they would allow surpassing the limit imposed by the lithographic feature size, the spontaneous formation of highly interconnected networks poses a new challenge: how to characterize and control the obtained assemblies. In view of a flourishing…
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Self-assembled structures are possible solutions to the problem of increasing the density and connectivity of memristive units in massive arrays. Although they would allow surpassing the limit imposed by the lithographic feature size, the spontaneous formation of highly interconnected networks poses a new challenge: how to characterize and control the obtained assemblies. In view of a flourishing field of such experimental realizations, this study explores the collective electrical response of simulated memristive units when assembled in geometrically organized and progressively distorted configurations. We show that highly idealized memristive arrays already display a degree of complexity that needs to be taken into account when characterizing self-assemblies to be technologically exploited. Moreover, the introduction of simple distortions has a considerable impact on the available resistance states and their evolution upon cycling. Considering arrays of a limited size, we also demonstrate that the collective response resembles aspects of the individual model while also revealing its own phenomenology.
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Submitted 18 January, 2022;
originally announced January 2022.
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Proton irradiation effects on metal-YBCO interfaces
Authors:
C. Acha,
G. A. Sanca,
M. Barella,
M. Alurralde,
F. Gomez Marlasca,
H. Huhtinen,
P. Paturi,
F. Golmar,
P. Levy
Abstract:
10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the r…
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10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $γ$ power exponent parameter [$γ=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.
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Submitted 27 February, 2021;
originally announced March 2021.
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COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit
Authors:
José Lipovetzky,
Mariano Garcia-Inza,
Macarena Rodríguez Cañete,
Gabriel Redin,
Sebastián Carbonetto,
Martín Echarri,
Federico Golmar,
Fernando Gomez Marlasca,
Mariano Barella,
Gabriel A. Sanca,
Pablo Levy,
Adrián Faigón
Abstract:
We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm…
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We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.
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Submitted 30 June, 2020;
originally announced July 2020.
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LabOSat as a versatile payload for small satellites: first 100days in LEO orbit
Authors:
G. A. Sanca,
M. Barella,
F. Gomez Marlasca,
G. Rodríguez,
D. Martelliti,
L. Patrone,
P. Levy,
F. Golmar
Abstract:
In this work the first results obtained by LabOSat-01 platform are presented. This platform was designed for testing custom devices on board of small satellites. Two LabOSat-01 type boards were launched and placed into Low Earth Orbit (LEO) on May 30, 2016. We present here an analysis of data collected by one of these boards during the first days of mission. Total Ionization Dose results are compa…
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In this work the first results obtained by LabOSat-01 platform are presented. This platform was designed for testing custom devices on board of small satellites. Two LabOSat-01 type boards were launched and placed into Low Earth Orbit (LEO) on May 30, 2016. We present here an analysis of data collected by one of these boards during the first days of mission. Total Ionization Dose results are compared with data acquired by LabOSat-01`s predecessor board, MeMOSat-01, launched in 2014.
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Submitted 30 June, 2020;
originally announced July 2020.
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Tuning the magneto-electrical properties of multiferroic multilayers through interface strain and disorder
Authors:
J. Gonzalez Sutter,
A. Sarmiento Chávez,
S. Soria,
M. Granada,
L. Neñer,
S. Bengió,
P. Granel,
F. Golmar,
N. Haberkorn,
A. G. Leyva,
M. Sirena
Abstract:
Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effect…
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Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effects on the superlattices with different structural characteristics. The crystalline structure was characterized by X-Ray diffraction and transmission electron microscopy. The magnetic and electronic properties were investigated by SQUID magnetometry and resistance measurements. The results show that both strain and structural disorder can significantly affect the physical properties of the systems. Compressive strain tends to increase the competition between the magnetic interactions decreasing the ferromagnetism of the samples and the localization of the charge carrier through the electron-phonon interaction. Tensile strain reduces the charge carrier localization, increasing the ferromagnetic transition temperature. Structural defects have a stronger influence on the magnetic properties than on the transport properties, reducing the ferromagnetic transition temperature while increasing the magnetic hardness of the superlattices. These results help to further understand the role of strain and interface effects in the magnetic and transport properties of manganite based multiferroic systems.
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Submitted 28 June, 2020;
originally announced June 2020.
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YBCO-based non-volatile ReRAM tested in Low Earth Orbit
Authors:
C. Acha,
M. Barella,
G. A. Sanca,
F. Gomez Marlasca,
H. Huhtinen,
P. Paturi,
P. Levy,
F. Golmar
Abstract:
An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small s…
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An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.
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Submitted 26 June, 2020;
originally announced June 2020.
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Impact of growth conditions on the domain nucleation and domain wall propagation in Pt/Co/Pt stacks
Authors:
C. P. Quinteros,
M. J. Cortes Burgos,
L. J. Albornoz,
J. Gomez,
P. Granell,
F. Golmar,
M. L. Ibarra,
S. Bustingorry,
J. Curiale,
M. Granada
Abstract:
Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers…
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Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers were deposited by dc sputtering, and the parameters varied in this study were the Co thickness, the substrate roughness, and the base pressure in the deposition chamber. Magneto-optical Kerr effect-based magnetometry and microscopy combined with X-ray reflectometry, atomic force microscopy, and transmission electron microscopy were adopted as experimental techniques. This permitted us to elucidate the impact on the hysteresis loops and on the domain wall dynamics, produced by different growth conditions. As other authors, we found that Co thickness is strongly determinant for both the coercive field and the domain wall velocity. On the contrary, the topographic roughness of the substrate and the base pressure of the deposition chamber evidence a selective impact on the nucleation of magnetic domains and on domain wall propagation, respectively, providing a tool to tune these properties.
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Submitted 29 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Effect of mixed pinning landscapes produced by 6 MeV Oxygen irradiation on the resulting critical current densities J$_c$ in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors grown by co-evaporation
Authors:
N. Haberkorn,
S. Suárez,
P. D. Pérez,
H. Troiani,
P. Granell,
F. Golmar,
Jae-Hun Lee,
S. H. Moon
Abstract:
We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and…
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We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and 4x10$^{14}$ cm$^{-2}$. At temperatures below 40 K with the magnetic field applied parallel (H//c) and at 45° (H//45°) to the c-axis, the in-field J$_c$ dependences can be significantly improved by irradiation. For doses of 1x10$^{14}$ cm$^{-2}$ the J$_c$ values at $μ$$_0$H = 5 T are doubled without affecting significantly the J$_c$ at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H//c and H//45° in pristine films presents characteristic glassy exponents $μ$ = 1.63 and $μ$ = 1.45, respectively. For samples irradiated with 1x10$^{14}$ cm$^{-2}$, these values drop to $μ$ = 1.45 and $μ$ =1.24, respectively.
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Submitted 17 August, 2017; v1 submitted 13 June, 2017;
originally announced June 2017.
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Manganite-based three level memristive devices with self-healing capability
Authors:
W. Román Acevedo,
D. Rubi,
J. Lecourt,
U. Lüders,
F. Gomez-Marlasca,
P. Granell,
F. Golmar,
P. Levy
Abstract:
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an interm…
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We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.
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Submitted 16 June, 2016;
originally announced June 2016.
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Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects
Authors:
Miren Isasa,
Amilcar Bedoya-Pinto,
Saül Vélez,
Federico Golmar,
Florencio Sánchez,
Luis E. Hueso,
Josep Fontcuberta,
Fèlix Casanova
Abstract:
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mi…
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We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pum** or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.
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Submitted 9 October, 2014; v1 submitted 4 July, 2013;
originally announced July 2013.
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Experimental Verification of the Spectral Shift between Near- and Far-Field Peak Intensities of Plasmonic Nanoantennas
Authors:
P. Alonso-Gonzalez,
P. Albella,
F. Neubrech,
Christian Huck,
J. Chen,
F. Golmar,
F. Casanova,
L. E. Hueso,
A. Pucci,
J. Aizpurua,
R. Hillenbrand
Abstract:
Theory predicts a distinct spectral shift between the near- and far-field optical responses of plasmonic antennas. Here we combine near-field optical microscopy and far-field spectroscopy of individual infrared-resonant nanoantennas to verify experimentally this spectral shift. Numerical calculations corroborate our experimental results. We furthermore discuss the implications of this effect in su…
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Theory predicts a distinct spectral shift between the near- and far-field optical responses of plasmonic antennas. Here we combine near-field optical microscopy and far-field spectroscopy of individual infrared-resonant nanoantennas to verify experimentally this spectral shift. Numerical calculations corroborate our experimental results. We furthermore discuss the implications of this effect in surface-enhanced infrared spectroscopy (SEIRS).
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Submitted 23 January, 2013;
originally announced January 2013.
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How reliable are Hanle measurements in metals in a three-terminal geometry?
Authors:
Oihana Txoperena,
Marco Gobbi,
Amilcar Bedoya-Pinto,
Federico Golmar,
Xiangnan Sun,
Luis E. Hueso,
Fèlix Casanova
Abstract:
We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization o…
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We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization of the ferromagnetic contact. Finally, the spin relaxation times obtained with this method are independent of the choice of the metallic channel. These results are not compatible with spin accumulation in the metal. Furthermore, a scaling of the Hanle signal with the interface resistance of the devices suggests that the measured signal is originated in the tunnel junction.
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Submitted 30 November, 2012;
originally announced November 2012.
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Evidence of defect-induced ferromagnetism in ZnFe$_{2}$O$_{4}$ thin films
Authors:
C. E. Rodríguez Torres,
F. Golmar,
M. Ziese,
P. Esquinazi,
S. P. Heluani
Abstract:
X-ray absorption near-edge and grazing incidence X-ray fluorescence spectroscopy are employed to investigate the electronic structure of ZnFe$_{2}$O$_{4}$ thin films. The spectroscopy techniques are used to determine the non-equilibrium cation site occupancy as a function of depth and oxygen pressure during deposition and its effects on the magnetic properties. It is found that low deposition pres…
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X-ray absorption near-edge and grazing incidence X-ray fluorescence spectroscopy are employed to investigate the electronic structure of ZnFe$_{2}$O$_{4}$ thin films. The spectroscopy techniques are used to determine the non-equilibrium cation site occupancy as a function of depth and oxygen pressure during deposition and its effects on the magnetic properties. It is found that low deposition pressures below 10$^{-3}$ mbar cause iron superoccupation of tetrahedral sites without Zn$^{2+}$ inversion, resulting in an ordered magnetic phase with high room temperature magnetic moment.
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Submitted 15 June, 2011;
originally announced June 2011.
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ZnO:Co Diluted Magnetic Semiconductor or Hybrid Nanostructure for Spintronics?
Authors:
F. Golmar,
M. Villafuerte,
A. Mudarra Navarro,
C. E. Rodrıguez Torres,
J. Barzola-Quiquia,
P. Esquinazi,
S. P. Heluani
Abstract:
We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values…
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We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
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Submitted 1 July, 2010;
originally announced July 2010.
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Magnetic and structural study of Cu-doped TiO2 thin films
Authors:
C. E. Rodríguez Torres,
F. Golmar,
A. F. Cabrera,
L. A. Errico,
A. M. Mudarra Navarro,
M. Rentería,
F. H. Sánchez,
S. Duhalde
Abstract:
Transparent pure and Cu-doped (2.5, 5 and 10 at. %) anatase TiO2 thin films were grown by pulsed laser deposition technique on LaAlO3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are al…
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Transparent pure and Cu-doped (2.5, 5 and 10 at. %) anatase TiO2 thin films were grown by pulsed laser deposition technique on LaAlO3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO2. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to this Cu substitutionally replacing cations in TiO2.
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Submitted 22 February, 2007;
originally announced February 2007.
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XAS study of the local environment of impurities in doped TiO2 thin films
Authors:
C. E. Rodríguez Torres,
A. F. Cabrera,
L. A. Errico,
S. Duhalde,
M. Rentería,
F. Golmar,
F. H. Sánchez
Abstract:
In this work we present an X-ray Absorption Spectroscopy characterization of the local environment of the impurity in room temperature ferromagnetic anatase TiO2 thin films doped with Co, Ni, Cu, or Zn, deposited on LaAlO3 substrate by Pulsed Laser Deposition. It was found that there is a considerable amount of impurity atoms substituting Ti in TiO2 anatase, although the presence of metal transi…
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In this work we present an X-ray Absorption Spectroscopy characterization of the local environment of the impurity in room temperature ferromagnetic anatase TiO2 thin films doped with Co, Ni, Cu, or Zn, deposited on LaAlO3 substrate by Pulsed Laser Deposition. It was found that there is a considerable amount of impurity atoms substituting Ti in TiO2 anatase, although the presence of metal transition monoxide clusters can not be discarded. From our results we infer that the observed room temperature ferromagnetism of the samples could be assigned to the metal transition atoms replacing Ti in TiO2 anatase.
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Submitted 18 April, 2007; v1 submitted 21 February, 2007;
originally announced February 2007.
