Showing 1–41 of 41 results for author: Goldman, A M

Infinite-randomness fixed point of the quantum superconductor-metal transitions in amorphous thin films

Authors: Nicholas A. Lewellyn, Ilana M. Percher, JJ Nelson, Javier Garcia-Barriocanal, Irina Volotsenko, Aviad Frydman, Thomas Vojta, Allen M. Goldman

Abstract: The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions, and exhibit power-law scaling behavior. For superconducting indium oxide films with low disorder, such as the ones reported on here, the high-field state appears to be a quantum-corrected metal. Resistance data across the superco… ▽ More The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions, and exhibit power-law scaling behavior. For superconducting indium oxide films with low disorder, such as the ones reported on here, the high-field state appears to be a quantum-corrected metal. Resistance data across the superconductor-metal transition in these films are shown here to obey an activated scaling form appropriate to a quantum phase transition controlled by an infinite randomness fixed point in the universality class of the random transverse-field Ising model. Collapse of the field-dependent resistance vs. temperature data is obtained using an activated scaling form appropriate to this universality class, using values determined through a modified form of power-law scaling analysis. This exotic behavior of films exhibiting a superconductor-metal transition is caused by the dissipative dynamics of superconducting rare regions immersed in a metallic matrix, as predicted by a recent renormalization group theory. The smeared crossing points of isotherms observed are due to corrections to scaling which are expected near an infinite randomness critical point, where the inverse disorder strength acts as an irrelevant scaling variable. △ Less

Submitted 8 January, 2019; v1 submitted 7 September, 2018; originally announced September 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 99, 054515 (2019)

Vortex Variable Range Hop** in a Conventional Superconducting Film

Authors: Ilana M. Percher, Irina Volotsenko, Aviad Frydman, Boris I. Shklovskii, Allen M. Goldman

Abstract: The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed, though the isotherms do not cross at a single point. The curves of resistance vs. temperature on the putative superconducting side of this transition, where the… ▽ More The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed, though the isotherms do not cross at a single point. The curves of resistance vs. temperature on the putative superconducting side of this transition, where the resistance decreases with decreasing temperature, obey two-dimensional Mott variable-range hop** of vortices over wide ranges of temperature and resistance. To estimate the parameters of hop**, the film is modeled as a granular system and the hop** of vortices is treated in a manner analogous to hop** of charges. The reason the long range interaction between vortices over the range of magnetic fields investigated does not lead to a stronger variation of resistance with temperature than that of two-dimensional Mott variable-range hop** remains unresolved. △ Less

Submitted 15 December, 2017; v1 submitted 12 September, 2017; originally announced September 2017.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 96, 224511 (2017)

Homes Scaling in Ionic Liquid Gated La$_{2}$CuO$_{4+x}$ Thin Films

Authors: J. Kinney, J. Garcia-Barriocanal, A. M. Goldman

Abstract: Finding more efficient ways of exploring the do** phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We use a do** technique involving gating with ionic liquids to systematically and continuously tune the T$_{c}$ of superconducting La$_{2}$CuO$_{4+x}$ thin film… ▽ More Finding more efficient ways of exploring the do** phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We use a do** technique involving gating with ionic liquids to systematically and continuously tune the T$_{c}$ of superconducting La$_{2}$CuO$_{4+x}$ thin films. We probe both the transport properties and the penetration depth of these samples and find that Homes scaling $λ^{-2}\proptoσT_{c}$ is obeyed, consistent with these materials being in the dirty limit. This result is independent of the precise mechanism for the gating process as all of the parameters of the scaling relationship are determined by direct measurements on the films. △ Less

Submitted 22 July, 2015; originally announced July 2015.

Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid

Authors: JJ Nelson, A. M. Goldman

Abstract: High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the… ▽ More High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond $10^{13} \text{cm}^{-2}$. △ Less

Submitted 4 June, 2015; v1 submitted 4 May, 2015; originally announced May 2015.

Hop** Conduction via Ionic Liquid Induced Silicon Surface States

Authors: J. Nelson, K. V. Reich, M. Sammon, B. I. Shklovskii, A. M. Goldman

Abstract: In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than re… ▽ More In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hop** between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hop** conductivity resembles that of well studied $\text{Na}^{+}$ implanted Si MOSFETs. △ Less

Submitted 23 August, 2015; v1 submitted 30 April, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 92, 085424 (2015)

Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition

Authors: Yeonbae Lee, Aviad Frydman, Tianran Chen, Brian Skinner, A. M. Goldman

Abstract: The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large mag… ▽ More The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity. △ Less

Submitted 28 May, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. B 88, 024509 (2013)

Electronically driven superconductor insulator transition in electrostatically doped La$_{2}$CuO$_{4+δ}$ thin films

Authors: J. Garcia-Barriocanal, A. Kobrinskii, X. Leng, J. Kinney, B. Yang, S. Snyder, A. M Goldman

Abstract: Using an electronic double layer transistor we have systematically studied the superconductor to insulator transition in La$_{2}$CuO$_{4+δ}$ thin films growth by ozone assisted molecular beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system… ▽ More Using an electronic double layer transistor we have systematically studied the superconductor to insulator transition in La$_{2}$CuO$_{4+δ}$ thin films growth by ozone assisted molecular beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system that is otherwise characterized by the presence of miscibility gaps. The transport and magneto-transport results highlight the role of electron-electron interactions in the mechanism of the transition due to the proximity of the Mott insulating state. △ Less

Submitted 28 October, 2012; originally announced October 2012.

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Do**

Authors: Xiang Leng, Javier Garcia-Barriocanal, Boyi Yang, Yeonbae Lee, Allen M. Goldman

Abstract: We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic do** using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step do** mechanism for electrostatic do** was revealed. The norm… ▽ More We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into the overdoped regime by means of electrostatic do** using an ionic liquid as a dielectric material. This process proved to be reversible. Transport measurements showed a series of anomalous features compared to chemically doped bulk samples and a different two-step do** mechanism for electrostatic do** was revealed. The normal resistance increased with carrier concentration on the overdoped side and the high temperature (180 K) Hall number peaked at a do** level of p$\sim$0.15. These anomalous behaviors suggest that there is an electronic phase transition in the Fermi surface around the optimal do** level. △ Less

Submitted 30 July, 2011; originally announced August 2011.

Comments: 4 pages,3 figures

Electrostatic Control of the Evolution from Superconductor to Insulator in Ultrathin Films of Yttrium Barium Copper Oxide

Authors: Xiang Leng, Javier Garcia-Barriocanal, Yeonbae Lee, Allen M. Goldman

Abstract: The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resista… ▽ More The electrical transport properties of ultrathin YBCO films have been modified using an electric double layer transistor configuration employing an ionic liquid. The films were grown on SrTiO3 substrates using high pressure oxygen sputtering. A clear evolution from superconductor to insulator was observed in nominally 7 unit cell thick films. Using a finite size scaling analysis, curves of resistance versus temperature, R(T), over the temperature range from 6K to 22K were found to collapse onto a single scaling function, which suggests the the presence of a quantum critical point. However the scaling failed at the lowest temperatures suggesting the presence of an additional phase between the superconducting and insulating regimes. △ Less

Submitted 7 April, 2011; originally announced April 2011.

Comments: 4 pages, 6 figures

Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films

Authors: Yen-Hsiang Lin, A. M. Goldman

Abstract: A surprisingly strong variation of resistance with perpendicular magnetic field, and a peak in the resistance vs. field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, vs. field were found to cross at a well-defined… ▽ More A surprisingly strong variation of resistance with perpendicular magnetic field, and a peak in the resistance vs. field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, vs. field were found to cross at a well-defined magnetic field higher than the field corresponding to the peak in R(B). For all values of B, R(T) was found to obey an Arrhenius form. At the crossover magnetic field the prefactor became equal to the quantum resistance of electron pairs, h/4e^2, and the activation energy returned to its zero field value. These observations suggest that the crossover is the signature of a quantum phase transition between two distinct insulating ground states, tuned by magnetic field. △ Less

Submitted 30 January, 2011; originally announced January 2011.

Comments: 4 pages, 4 figures

Phase diagram of electrostatically doped Strontium Titanate (SrTiO3)

Authors: Yeonbae Lee, Colin Clement, Jack Hellerstedt, Joseph Kinney, Laura Kinnischtzke, S. D. Snyder, A. M. Goldman

Abstract: Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such do** over broad ranges of temperature and carrier concentration employing an ionic liquid as the gate dielectric. The surprising results are, with increasing carrier concentration, an apparent carrier-density dependent conduct… ▽ More Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such do** over broad ranges of temperature and carrier concentration employing an ionic liquid as the gate dielectric. The surprising results are, with increasing carrier concentration, an apparent carrier-density dependent conductor-insulator transition, a regime of anomalous Hall effect, suggesting magnetic ordering, and finally the appearance of superconductivity. The possible appearance of magnetic order near the boundary between the insulating and superconducting regimes is reminiscent of effects associated with quantum critical behavior in some complex compounds. △ Less

Submitted 9 March, 2011; v1 submitted 19 January, 2011; originally announced January 2011.

Journal ref: Phys. Rev. Lett. 106, 136809 (2011)

The Stabilization of Superconductivity by Magnetic Field in Out-of-Equilibrium Nanowires

Authors: Yu Chen, Yen-Hsiang Lin, S. D. Snyder, A. M. Goldman

Abstract: A systematic study has been carried out on the previously reported "magnetic-field-induced superconductivity" of Zn nanowires. By varying parameters such as magnetic field orientation and wire length, the results provide evidence that the phenomenon is a nonequilibrium effect associated with the boundary electrodes. They also suggest there are two length scales involved, the superconducting cohere… ▽ More A systematic study has been carried out on the previously reported "magnetic-field-induced superconductivity" of Zn nanowires. By varying parameters such as magnetic field orientation and wire length, the results provide evidence that the phenomenon is a nonequilibrium effect associated with the boundary electrodes. They also suggest there are two length scales involved, the superconducting coherence length and quasiparticle relaxation length. As wire lengths approach either of these length scales, the effect weakens. We demonstrate that it is appropriate to consider the effect to be a stabilization of superconductivity, that has been suppressed by an applied current. △ Less

Submitted 2 August, 2010; v1 submitted 9 February, 2010; originally announced February 2010.

Comments: (Updated Version) 9 pages, 8 figures

Indirect Magnetic-Field-Tuned Superconductor-Insulator Transitions and Weak Localization of Bosons of Quasi-Two Dimensional Metal Films

Authors: Yen-Hsiang Lin, A. M. Goldman

Abstract: Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase transitions. When films with lower levels of disorder are subjected to a perpendicular magnetic field, instead of a direct transition, a mixed superconductor-nonsup… ▽ More Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase transitions. When films with lower levels of disorder are subjected to a perpendicular magnetic field, instead of a direct transition, a mixed superconductor-nonsuperconductor regime emerges at the lowest temperatures. The zero temperature limit of the resistance is either insulating or superconducting, depending upon the value of the field, suggesting that the behavior in this limit is governed by percolation physics. At high fields and low temperatures, in the nominally insulating regime, the resistance rather than the conductance is found to be a logarithmic function of temperature corresponding to predicitons for the weak localization of bosons. △ Less

Submitted 8 February, 2010; originally announced February 2010.

Comments: 4 pages, 4 figures

Magnetic Field Induced Superconductivity in Out-of-Equilibrium Nanowires

Authors: Yu Chen, S. Snyder, A. M. Goldman

Abstract: Four-terminal resistance measurements have been carried out on Zn nanowires formed using electron-beam lithography. When driven resistive by current, these wires re-enter the superconducting state upon application of small magnetic fields. The data are qualitatively different from those of previous experiments on superconducting nanowires, which revealed either negative magnetoresistance near T_… ▽ More Four-terminal resistance measurements have been carried out on Zn nanowires formed using electron-beam lithography. When driven resistive by current, these wires re-enter the superconducting state upon application of small magnetic fields. The data are qualitatively different from those of previous experiments on superconducting nanowires, which revealed either negative magnetoresistance near T_{c} or magnetic field enhanced critical currents. We suggest that our observations are associated with the dam** of phase slip processes by the enhancement of dissipation by the quasiparticle conductance channel resulting from the application of a magnetic field. △ Less

Submitted 22 January, 2009; originally announced January 2009.

Thickness dependence of the exchange bias in epitaxial manganite bilayers

Authors: A. L. Kobrinskii, Maria Varela, S. J. Pennycook, A. M. Goldman

Abstract: Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified using high-resolution X-ray diffractometry and Z-contrast scanning transmission electron microscopy with electron energy loss spectroscopy. The dependence of e… ▽ More Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified using high-resolution X-ray diffractometry and Z-contrast scanning transmission electron microscopy with electron energy loss spectroscopy. The dependence of exchange bias on the thickness of the antiferromagnetic layer has been investigated. A critical value for the onset of the hysteresis loop shift has been determined. An antiferromagnetic anisotropy constant has been obtained by fitting the results to the generalized Meiklejohn-Bean model. △ Less

Submitted 18 September, 2008; v1 submitted 17 April, 2008; originally announced April 2008.

Comments: 7 pages. 8 figures

Signatures of Random Matrix Theory in the Discrete Energy Spectra of Subnanosize Metallic Clusters

Authors: L. L. A. Adams, B. W. Lang, Yu Chen, A. M. Goldman

Abstract: Lead clusters deposited on Si(111) substrates have been studied at low temperatures using scanning tunneling microscopy and spectroscopy. The current-voltage characteristics exhibit current peaks that are irregularly spaced and varied in height. The statistics of the distribution of peak heights and spacings are in agreement with random matrix theory for several clusters. The distributions have… ▽ More Lead clusters deposited on Si(111) substrates have been studied at low temperatures using scanning tunneling microscopy and spectroscopy. The current-voltage characteristics exhibit current peaks that are irregularly spaced and varied in height. The statistics of the distribution of peak heights and spacings are in agreement with random matrix theory for several clusters. The distributions have also been studied as a function of cluster shape. △ Less

Submitted 1 May, 2007; originally announced May 2007.

Comments: 10 pages, 9 figures, to appear in Phys. Rev. B

Evidence of Spatially Inhomogeous Pairing on the Insulating Side of a Disorder-Tuned Superconductor-Insulator Transition

Authors: K. H. Sarwa B. Tan, Kevin A. Parendo, A. M. Goldman

Abstract: Measurements of transport properties of amorphous insulating indium oxide thin films have been interpreted as evidence of the presence of superconducting islands on the insulating side of a disorder-tuned superconductor-insulator transition. Although the films are not granular, the behavior is similar to that observed in granular films. The results support theoretical models in which the destruc… ▽ More Measurements of transport properties of amorphous insulating indium oxide thin films have been interpreted as evidence of the presence of superconducting islands on the insulating side of a disorder-tuned superconductor-insulator transition. Although the films are not granular, the behavior is similar to that observed in granular films. The results support theoretical models in which the destruction of superconductivity by disorder produces spatially inhomogenous pairing with a spectral gap. △ Less

Submitted 18 December, 2007; v1 submitted 5 April, 2007; originally announced April 2007.

Comments: Revised title and content/argument. Totals: 4 pages, 3 figures

Hot Electron Effects in the 2D Superconductor-Insulator Transition

Authors: Kevin A. Parendo, K. H. Sarwa B. Tan, A. M. Goldman

Abstract: The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below approximately 120 mK. Several observations suggest that this regime is not intrinsically "metallic" but results from the failure of the films' electrons to coo… ▽ More The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below approximately 120 mK. Several observations suggest that this regime is not intrinsically "metallic" but results from the failure of the films' electrons to cool. The onset of this temperature-independent regime can be moved to higher temperatures by either increasing the measuring current or the level of electromagnetic noise. Temperature scaling is successful above 120 mK. Electric field scaling can be mapped onto temperature scaling by relating the electric fields to elevated electron temperatures. These results cast doubt on the existence of an intrinsic metallic regime and on the independent determination of the correlation length and dynamical critical exponents obtained by combining the results of electric field and temperature scaling. △ Less

Submitted 22 August, 2006; originally announced August 2006.

Comments: 4 pages, 4 figures

Electrostatic- and Parallel Magnetic Field- Tuned Two Dimensional Superconductor-Insulator Transitions

Authors: Kevin A. Parendo, K. H. Sarwa B. Tan, A. M. Goldman

Abstract: The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron do** using the electric field effect and by the application of parallel magnetic fields. Electrostatic do** was carried out in both zero and nonzero magnetic fields, and magnetic tuning was conducted at multiple strengths of electrostatically induced superc… ▽ More The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron do** using the electric field effect and by the application of parallel magnetic fields. Electrostatic do** was carried out in both zero and nonzero magnetic fields, and magnetic tuning was conducted at multiple strengths of electrostatically induced superconductivity. The transitions were analyzed using finite size scaling with critical exponent products nu*z = 0.65-0.7. The parallel critical magnetic field increased with electron transfer as (dn_c-dn)^0.33, where dn is the electron transfer and dn_c is its critical value, and the critical resistance decreased linearly with dn. However at lower temperatures, in the insulating regime, the resistance became larger than expected from extrapolation of its temperature dependence at higher temperatures, and scaling failed. These observations imply that although the electrostatic- and parallel magnetic field- tuned superconductor-insulator transitions would appear to belong to the same universality class and to be delineated by a robust phase boundary that can be crossed either by tuning electron density or magnetic field, in the case of the field-tuned transition at the lowest temperatures, some different type of physical behavior turns on in the insulating regime. △ Less

Submitted 29 December, 2005; originally announced December 2005.

Comments: About 11 pages, with 14 figures. To be submitted to Phys Rev B

Observation of discrete energy levels in a quantum confined system

Authors: L. L. A. Adams, B. W. Lang, A. M. Goldman

Abstract: Low temperature scanning tunneling microscope images and spectroscopic data have been obtained on subnanometer size Pb clusters fabricated using the technique of buffer layer assisted growth. Discrete energy levels were resolved in current-voltage characteristics as current peaks rather than current steps. Distributions of peak voltage spacings and peak current heights were consistent with Wigne… ▽ More Low temperature scanning tunneling microscope images and spectroscopic data have been obtained on subnanometer size Pb clusters fabricated using the technique of buffer layer assisted growth. Discrete energy levels were resolved in current-voltage characteristics as current peaks rather than current steps. Distributions of peak voltage spacings and peak current heights were consistent with Wigner-Dyson and Porter-Thomas distributions respectively, suggesting the relevance of random matrix theory to the description of the electronic eigenstates of the clusters. The observation of peaks rather than steps in the current-voltage characteristics is attributed to a resonant tunneling process involving the discrete energy levels of the cluster, the tip, and the states at the interface between the cluster and the substrate surface. △ Less

Submitted 23 February, 2005; originally announced February 2005.

Comments: 4 pages, 4 figures

Electrostatic Tuning of the Superconductor-Insulator Transition in Two Dimensions

Authors: Kevin A. Parendo, K. H. Sarwa B. Tan, A. Bhattacharya, M. Eblen-Zayas, N. E. Staley, A. M. Goldman

Abstract: Superconductivity has been induced in insulating ultra-thin films of amorphous bismuth using the electric field effect. The screening of electron-electron interaction was found to increase with electron concentration in a manner correlated with the tendency towards superconductivity. This does not preclude an increase in the density of states being important in the development of superconductivi… ▽ More Superconductivity has been induced in insulating ultra-thin films of amorphous bismuth using the electric field effect. The screening of electron-electron interaction was found to increase with electron concentration in a manner correlated with the tendency towards superconductivity. This does not preclude an increase in the density of states being important in the development of superconductivity. The superconductor-insulator transition appears to belong to the universality class of the three dimensional XY model. △ Less

Submitted 17 March, 2005; v1 submitted 27 January, 2005; originally announced January 2005.

Comments: Four pages, three figures. Revised slightly to reflect referees' comments

Low-Temperature Glassy Response of Ultrathin Manganite Films to Electric and Magnetic Fields

Authors: A. Bhattacharya, M. Eblen-Zayas, N. E. Staley, A. L. Kobrinskii, A. M. Goldman

Abstract: The glassy response of thin films of La0.8Ca0.2MnO3 to external magnetic and gated electrostatic fields in a field-effect geometry has been studied at low temperatures. A hierarchical response with irreversible memory effects, non-ergodic time evolution, aging and annealing behavior of the resistance suggest that the dynamics are governed by strain relaxation for both electronic and magnetic per… ▽ More The glassy response of thin films of La0.8Ca0.2MnO3 to external magnetic and gated electrostatic fields in a field-effect geometry has been studied at low temperatures. A hierarchical response with irreversible memory effects, non-ergodic time evolution, aging and annealing behavior of the resistance suggest that the dynamics are governed by strain relaxation for both electronic and magnetic perturbations. Cross-coupling of charge, spin, and strain have been exploited to tune the coercivity of an ultrathin manganite film by electrostatic gating. △ Less

Submitted 23 July, 2004; originally announced July 2004.

Comments: 4 pages, 5 figures

Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 Films

Authors: M. Eblen-Zayas, A. Bhattacharya, N. E. Staley, A. L. Kobrinskii, A. M. Goldman

Abstract: Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The electric field due to the gate produces a large ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the couple of localized charge to strain. The gate effect and mangetoresistance are interpreted in a consistent framework. The impli… ▽ More Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The electric field due to the gate produces a large ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the couple of localized charge to strain. The gate effect and mangetoresistance are interpreted in a consistent framework. The implications for the low temperature behavior of a manganite film in the two dimensional limit are discussed. △ Less

Submitted 23 July, 2004; originally announced July 2004.

Comments: 4 pages, 3 figures

Anomalous Parallel Field Negative Magnetoresistance in Ultrathin Films Near the Superconductor-Insulator Transition

Authors: Kevin A. Parendo, L. M. Hernandez, A. Bhattacharya, A. M. Goldman

Abstract: A parallel field negative magnetoresistance has been found in quench-condensed ultrathin films of amorphous bismuth in the immediate vicinity of the thickness-tuned superconductor-insulator transition. The effect appears to be a signature of quantum fluctuations of the order parameter associated with the quantum critical point. A parallel field negative magnetoresistance has been found in quench-condensed ultrathin films of amorphous bismuth in the immediate vicinity of the thickness-tuned superconductor-insulator transition. The effect appears to be a signature of quantum fluctuations of the order parameter associated with the quantum critical point. △ Less

Submitted 14 August, 2004; v1 submitted 10 June, 2004; originally announced June 2004.

Comments: Revised content includes revised argument and new figures 3 and 4. Totals: 4 pages, 4 figures

Low Temperature Metallic State of Ultrathin Films of Bismuth

Authors: L. M. Hernandez, Kevin A. Parendo, A. M. Goldman

Abstract: Measurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with thicknesses spanning the superconductor-to-insulator transition that would be inferred by analyzing data obtained above 0.14K. Film magnetoresistance was tem… ▽ More Measurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with thicknesses spanning the superconductor-to-insulator transition that would be inferred by analyzing data obtained above 0.14K. Film magnetoresistance was temperature dependent in the same temperature range over which the resistance was temperature independent. This implies that the low temperature metallic regime is intrinsic, and not a consequence of failure to cool the electrons. △ Less

Submitted 23 October, 2002; v1 submitted 22 October, 2002; originally announced October 2002.

Comments: 4 pages, 4 figures

Two-Phase Regime in the Magnetic Field-Temperature Phase Diagram of a Type-II Superconductor

Authors: L. L. A. Adams, Klaus Halterman, Oriol T. Valls, A. M. Goldman

Abstract: The magnetic field and temperature dependencies of the magnetic moments of superconducting crystals of ${\rm V_{3}Si}$ have been studied. In a constant magnetic field and at temperatures somewhat below the superconducting transition temperature, the moments are hysteretic in temperature. However the magnetic moment-magnetic field isotherms are reversible and exhibit features that formally resemb… ▽ More The magnetic field and temperature dependencies of the magnetic moments of superconducting crystals of ${\rm V_{3}Si}$ have been studied. In a constant magnetic field and at temperatures somewhat below the superconducting transition temperature, the moments are hysteretic in temperature. However the magnetic moment-magnetic field isotherms are reversible and exhibit features that formally resemble the pressure-volume isotherms of the liquid-gas transition. This suggests the existence of a first-order phase transition, a two-phase regime, and a critical point in the superconducting phase diagram. The entropy change, determined from the data using the Clausius-Clapeyron equation, is consistent with estimates based on the difference in the vortex densities of the two phases. △ Less

Submitted 6 June, 2002; originally announced June 2002.

Comments: Four pages, including three figures

Parallel Magnetic Field Induced Glass-Like Behavior of Disordered Ultrathin Films

Authors: L. M. Hernandez, A. Bhattacharya, K. A. Parendo, A. M. Goldman

Abstract: Dramatic glass-like behavior involving nonexponential relaxation of in-plane electrical conduction, has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. The effect is found over a narrow range of film thicknesses well on the insulating side of the thickness-tuned superconductor-insulator transition. The simplest explanation of this fi… ▽ More Dramatic glass-like behavior involving nonexponential relaxation of in-plane electrical conduction, has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. The effect is found over a narrow range of film thicknesses well on the insulating side of the thickness-tuned superconductor-insulator transition. The simplest explanation of this field-induced glass-like behavior is a Pauli principle blocking of hop** transport between singly occupied states when electrons are polarized by the magnetic field. A second explanation involving weak coupling of superconducting clusters by intercluster interactions of random sign is also discussed. △ Less

Submitted 14 October, 2001; v1 submitted 29 August, 2001; originally announced August 2001.

Comments: 4 pages, 4 figures

Bottom-loading dilution refrigerator with ultra-high vacuum deposition capability

Authors: L. M. Hernandez, A. M. Goldman

Abstract: A Kelvinox 400 dilution refrigerator with the ability to load samples onto the mixing chamber from the bottom of the cryostat has been combined with an ultrahigh-vacuum (UHV) deposition chamber equipped with molecular beam sources. The liquid helium cooled sample transfer mechanism is used in a manner that allows films to be grown on substrates which are kept at temperatures of order 8K with cha… ▽ More A Kelvinox 400 dilution refrigerator with the ability to load samples onto the mixing chamber from the bottom of the cryostat has been combined with an ultrahigh-vacuum (UHV) deposition chamber equipped with molecular beam sources. The liquid helium cooled sample transfer mechanism is used in a manner that allows films to be grown on substrates which are kept at temperatures of order 8K with chamber pressures in the 10^-9 to 10^-10 Torr range. This system facilitates the growth of quench-condensed ultrathin films which must always be kept below ~ 12K in a UHV environment during and after growth. Measurements can be made on the films down to millikelvin temperatures and in magnetic fields up to 15 T. △ Less

Submitted 20 August, 2001; v1 submitted 20 August, 2001; originally announced August 2001.

Comments: 10 pages text, 1figure

Electric Field Effect in Ultrathin Films near the Superconductor-Insulator Transition

Authors: N. Markovic, C. Christiansen, G. Martinez-Arizala, A. M. Goldman

Abstract: The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insul… ▽ More The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insulating side of the superconductor-insulator transition, the conductance increased with electric field, whereas for films that were becoming superconducting it decreased. Application of magnetic fields to the latter, which reduce the transition temperature and ultimately quench superconductivity, changed the sign of the reponse of the conductance to electric field back to that found for insulators. We propose that this symmetric response to capacitive charging is a consequence of changes in the conductance of the a-Ge layer, and is not a fundamental property of the physics of the superconductor-insulator transition as previously suggested. △ Less

Submitted 20 August, 2001; v1 submitted 20 August, 2001; originally announced August 2001.

Comments: 4 pages text, 4 figures

Evidence of Collective Charge Behavior in the Insulating State of Ultrathin Films of Superconducting Metals

Authors: C. Christiansen, L. M. Hernandez, A. M. Goldman

Abstract: Nonlinear I-V characteristics have been observed in insulating quench-condensed films which are locally superconducting. We suggest an interpretation in terms of the enhancement of conduction by the depinning of a Cooper pair charge density wave, Cooper pair crystal, or Cooper pair glass that may characterize the insulating regime of locally superconducting films. We propose that this is a more… ▽ More Nonlinear I-V characteristics have been observed in insulating quench-condensed films which are locally superconducting. We suggest an interpretation in terms of the enhancement of conduction by the depinning of a Cooper pair charge density wave, Cooper pair crystal, or Cooper pair glass that may characterize the insulating regime of locally superconducting films. We propose that this is a more likely description than the Coulomb blockade or charge-anticharge unbinding phenomena. △ Less

Submitted 20 August, 2001; originally announced August 2001.

Comments: 4 pages text, 3 figures

Magnetic Field Scaling of the Conductance of Epitaxial Cuprate-Manganite Bilayers

Authors: P. A. Kraus, A. Bhattacharya, A. M. Goldman

Abstract: Conductance-voltage characteristics of epitaxial interfaces between oxide ferromagnets and oxide superconductors have been measured as a function of temperature and magnetic field. Their functional form is similar to that predicted by theories of transport across nearly transparent contacts between highly spin-polarized ferromagnets and d-wave superconductors. However, their magnetic field depen… ▽ More Conductance-voltage characteristics of epitaxial interfaces between oxide ferromagnets and oxide superconductors have been measured as a function of temperature and magnetic field. Their functional form is similar to that predicted by theories of transport across nearly transparent contacts between highly spin-polarized ferromagnets and d-wave superconductors. However, their magnetic field dependencies scale in striking and unusual ways, challenging our current understanding. Existing theories fail to account for apparent nonequilibium effects that are natural for spin injection in such geometries. △ Less

Submitted 20 August, 2001; originally announced August 2001.

Comments: 4 pages text, 6 figures

Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites

Authors: I. N. Krivorotov, K. R. Nikolaev, A. Yu. Dobin, A. M. Goldman, E. D. Dahlberg

Abstract: The effect of an exchange field on electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer and by indirect exchange interaction in a ferromagnet/paramagnet superlattice. The electrical resistance of the manganite layers was found to be determined by t… ▽ More The effect of an exchange field on electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer and by indirect exchange interaction in a ferromagnet/paramagnet superlattice. The electrical resistance of the manganite layers was found to be determined by the absolute value of the vector sum of the effective exchange field and the external magnetic field. △ Less

Submitted 30 November, 2000; originally announced November 2000.

Comments: 5 pages, 4 figures

Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures

Authors: K. R. Nikolaev, A. Yu. Dobin, I. N. Krivorotov, W. K. Cooley, A. Bhattacharya, A. L. Kobrinskii, L. I. Glazman, R. M. Wentzcovitch, E. Dan Dahlberg, A. M. Goldman

Abstract: Oscillations in the exchange coupling between ferromagnetic $La_{2/3}Ba_{1/3}MnO_3$ layers with paramagnetic $LaNiO_3$ spacer layer thickness has been observed in epitaxial heterostructures of the two oxides. This behavior is explained within the RKKY model employing an {\it ab initio} calculated band structure of $LaNiO_3$, taking into account strong electron scattering in the spacer. Antiferro… ▽ More Oscillations in the exchange coupling between ferromagnetic $La_{2/3}Ba_{1/3}MnO_3$ layers with paramagnetic $LaNiO_3$ spacer layer thickness has been observed in epitaxial heterostructures of the two oxides. This behavior is explained within the RKKY model employing an {\it ab initio} calculated band structure of $LaNiO_3$, taking into account strong electron scattering in the spacer. Antiferromagnetically coupled superlattices exhibit a positive current-in-plane magnetoresistance. △ Less

Submitted 13 April, 2000; originally announced April 2000.

Comments: 4 pages (RevTeX), 5 figures (EPS)

Anomalous Hop** Exponents of Ultrathin Films of Metals

Authors: N. Markovic, C. Christiansen, D. E. Grupp, A. M. Mack, G. Martinez-Arizala, A. M. Goldman

Abstract: The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms… ▽ More The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hop** conduction. △ Less

Submitted 12 January, 2000; originally announced January 2000.

Comments: 6 pages, 5 figures

The Superconductor-Insulator Transition in 2D

Authors: N. Markovic, C. Christiansen, A. M. Mack, W. H. Huber, A. M. Goldman

Abstract: The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynami… ▽ More The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynamical critical exponent z. The phase diagram and the critical resistance have been studied as a function of film thickness and magnetic field. The results are discussed in terms of bosonic models of the superconductor-insulator transition, as well as the percolation models which predict finite dissipation at T=0. △ Less

Submitted 13 April, 1999; originally announced April 1999.

Comments: 9 pages, 11 figures

Comment on "Is the nonlinear Meissner effect unobservable?"

Authors: Anand Bhattacharya, Igor Zutic, Oriol T. Valls, A. M. Goldman

Abstract: In a recent Letter (Phys. Rev. Lett. 81, p.5640 (1998), cond-mat/9808249 v3), it was suggested that nonlocal effects may prevent observation of the nonlinear Meissner effect in YBCO. We argue that this claim is incorrect with regards to measurements of the nonlinear transverse magnetic moment, and that the most likely reason for a null result lies elsewhere. In a recent Letter (Phys. Rev. Lett. 81, p.5640 (1998), cond-mat/9808249 v3), it was suggested that nonlocal effects may prevent observation of the nonlinear Meissner effect in YBCO. We argue that this claim is incorrect with regards to measurements of the nonlinear transverse magnetic moment, and that the most likely reason for a null result lies elsewhere. △ Less

Submitted 16 December, 1998; originally announced December 1998.

Comments: 1 page

Angular Dependence of the Nonlinear Transverse Magnetic Moment of YBCO in the Meissner state

Authors: Anand Bhattacharya, Igor Zutic, Oriol T. Valls, Allen M. Goldman, Ulrich Welp, Boyd Veal

Abstract: The angular dependence of the nonlinear transverse magnetic moment of untwinned high-quality single crystals of optimally doped YBCO have been studied at a temperature of 2.5K using a low frequency AC technique. The absence of any signature at angular period 2π/4is analyzed in light of the numerical predictions of such a signal for a pure d-wave order parameter with line nodes. Implications of t… ▽ More The angular dependence of the nonlinear transverse magnetic moment of untwinned high-quality single crystals of optimally doped YBCO have been studied at a temperature of 2.5K using a low frequency AC technique. The absence of any signature at angular period 2π/4is analyzed in light of the numerical predictions of such a signal for a pure d-wave order parameter with line nodes. Implications of this null result for the existence of a non-zero gap at all angles on the Fermi surface are discussed. △ Less

Submitted 14 December, 1998; originally announced December 1998.

Comments: 4 pages, 2 ps figures (submitted to Phys. Rev. Lett.)

Thickness-Magnetic Field Phase Diagram at the Superconductor-Insulator Transition in 2D

Authors: N. Markovic, C. Christiansen, A. M. Goldman

Abstract: The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found… ▽ More The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found to be 1.2 for the zero field transition, and 1.4 for the finite field transition. Both results are different from the exponents found for the magnetic field tuned transition in the same system, 0.7. △ Less

Submitted 17 August, 1998; originally announced August 1998.

Comments: 4 pages, 4 figures

New Universality Class at the Magnetic Field Tuned Superconductor-Insulator Transition?

Authors: N. Markovic, C. Christiansen, A. M. Goldman

Abstract: The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by an applied magnetic field. A finite size scaling analysis has been carried out to determine the critical exponent product vz=0.7 for five films of different thicknesses and normal state resistances. This result differs from the exponents found in previous experiments on InOx and MoGe films. We discuss several… ▽ More The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by an applied magnetic field. A finite size scaling analysis has been carried out to determine the critical exponent product vz=0.7 for five films of different thicknesses and normal state resistances. This result differs from the exponents found in previous experiments on InOx and MoGe films. We discuss several possible reasons for this disagreement. △ Less

Submitted 12 August, 1998; originally announced August 1998.

Comments: 4 pages, 4 figures

Evidence of a T=0 Quantum Critical Point Associated with the Crossover from Weak to Strong Localization

Authors: A. M. Mack, N. Markovic, C. Christiansen, G. Martinez-Arizala, A. M. Goldman

Abstract: A crossover between logarithmic and exponential temperature dependence of the conductance (weak and strong localization) has been observed in ultrathin films of metals deposited onto substrates held at liquid helium temperatures. The resistance at the crossover is well defined by the onset of a nearly linear dependence of conductance on thickness at fixed temperature in a sequence of in situ eva… ▽ More A crossover between logarithmic and exponential temperature dependence of the conductance (weak and strong localization) has been observed in ultrathin films of metals deposited onto substrates held at liquid helium temperatures. The resistance at the crossover is well defined by the onset of a nearly linear dependence of conductance on thickness at fixed temperature in a sequence of in situ evaporated films. The results of a finite size scaling analysis treating thickness as a control parameter suggest the existence of a T=0 quantum critical point which we suggest is a charge, or electron glass melting transition. △ Less

Submitted 2 July, 1998; originally announced July 1998.

Comments: 4 pages, 4 figures

Evidence of Vortices on the Insulating Side of the Superconductor-Insulator Transition

Authors: N. Markovic, A. M. Mack, G. Martinez-Arizala, C. Christiansen, A. M. Goldman

Abstract: The magnetoresistance of ultrathin insulating films of Bi has been studied with magnetic fields applied parallel and perpendicular to the plane of the sample. Deep in the strongly localized regime, the magnetoresistance is negative and independent of field orientation. As film thicknesses increase, the magnetoresistance becomes positive, and a difference between values measured in perpendicular… ▽ More The magnetoresistance of ultrathin insulating films of Bi has been studied with magnetic fields applied parallel and perpendicular to the plane of the sample. Deep in the strongly localized regime, the magnetoresistance is negative and independent of field orientation. As film thicknesses increase, the magnetoresistance becomes positive, and a difference between values measured in perpendicular and parallel fields appears, which is a linear function of the magnetic field and is positive. This is not consistent with the quantum interference picture. We suggest that it is due to vortices present on the insulating side of the superconductor-insulator transition. △ Less

Submitted 17 June, 1998; originally announced June 1998.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.Lett. 81, 701 (1998)