Showing 1–37 of 37 results for author: Gokmen, T

Towards Exact Gradient-based Training on Analog In-memory Computing

Authors: Zhaoxian Wu, Tayfun Gokmen, Malte J. Rasch, Tianyi Chen

Abstract: Given the high economic and environmental costs of using large vision or language models, analog in-memory accelerators present a promising solution for energy-efficient AI. While inference on analog accelerators has been studied recently, the training perspective is underexplored. Recent studies have shown that the "workhorse" of digital AI training - stochastic gradient descent (SGD) algorithm c… ▽ More Given the high economic and environmental costs of using large vision or language models, analog in-memory accelerators present a promising solution for energy-efficient AI. While inference on analog accelerators has been studied recently, the training perspective is underexplored. Recent studies have shown that the "workhorse" of digital AI training - stochastic gradient descent (SGD) algorithm converges inexactly when applied to model training on non-ideal devices. This paper puts forth a theoretical foundation for gradient-based training on analog devices. We begin by characterizing the non-convergent issue of SGD, which is caused by the asymmetric updates on the analog devices. We then provide a lower bound of the asymptotic error to show that there is a fundamental performance limit of SGD-based analog training rather than an artifact of our analysis. To address this issue, we study a heuristic analog algorithm called Tiki-Taka that has recently exhibited superior empirical performance compared to SGD and rigorously show its ability to exactly converge to a critical point and hence eliminates the asymptotic error. The simulations verify the correctness of the analyses. △ Less

Submitted 18 June, 2024; originally announced June 2024.

Comments: 10 pages, 5 figures,2 tables

Multi-Function Multi-Way Analog Technology for Sustainable Machine Intelligence Computation

Authors: Vassilis Kalantzis, Mark S. Squillante, Shashanka Ubaru, Tayfun Gokmen, Chai Wah Wu, Anshul Gupta, Haim Avron, Tomasz Nowicki, Malte Rasch, Murat Onen, Vanessa Lopez Marrero, Effendi Leobandung, Yasuteru Kohda, Wilfried Haensch, Lior Horesh

Abstract: Numerical computation is essential to many areas of artificial intelligence (AI), whose computing demands continue to grow dramatically, yet their continued scaling is jeopardized by the slowdown in Moore's law. Multi-function multi-way analog (MFMWA) technology, a computing architecture comprising arrays of memristors supporting in-memory computation of matrix operations, can offer tremendous imp… ▽ More Numerical computation is essential to many areas of artificial intelligence (AI), whose computing demands continue to grow dramatically, yet their continued scaling is jeopardized by the slowdown in Moore's law. Multi-function multi-way analog (MFMWA) technology, a computing architecture comprising arrays of memristors supporting in-memory computation of matrix operations, can offer tremendous improvements in computation and energy, but at the expense of inherent unpredictability and noise. We devise novel randomized algorithms tailored to MFMWA architectures that mitigate the detrimental impact of imperfect analog computations while realizing their potential benefits across various areas of AI, such as applications in computer vision. Through analysis, measurements from analog devices, and simulations of larger systems, we demonstrate orders of magnitude reduction in both computation and energy with accuracy similar to digital computers. △ Less

Submitted 24 January, 2024; originally announced January 2024.

MSC Class: 65F10; C3; G1 ACM Class: G.1.3

Gridlock Models with the IBM Mega Traffic Simulator: Dependency on Vehicle Acceleration and Road Structure

Authors: Bruce G. Elmegreen, Tayfun Gokmen, Biruk Habtemariam

Abstract: Rush hour and sustained traffic flows in eight cities are studied using the IBM Mega Traffic Simulator to understand the importance of road structures and vehicle acceleration in the prevention of gridlock. Individual cars among the tens of thousands launched are monitored at every simulation time step using live streaming data transfer from the simulation software to analysis software on another… ▽ More Rush hour and sustained traffic flows in eight cities are studied using the IBM Mega Traffic Simulator to understand the importance of road structures and vehicle acceleration in the prevention of gridlock. Individual cars among the tens of thousands launched are monitored at every simulation time step using live streaming data transfer from the simulation software to analysis software on another computer. A measure of gridlock is the fraction of cars moving at less than 30% of their local road speed. Plots of this fraction versus the instantaneous number of cars on the road show hysteresis during rush hour simulations, indicating that it can take twice as long to unravel clogged roads as fill them. The area under the hysteresis loop is used as a measure of gridlock to compare different cities normalized to the same central areas. The differences between cities, combined with differences between idealized models using square or triangular road grids, indicate that gridlock tends to occur most when there are a small number of long roads that channel large fractions of traffic. These long roads help light traffic flow but they make heavy flows worse. Increasing the speed on these long roads makes gridlock even worse in heavy conditions. City throughput rates are also modeled using a smooth ramp up to a constant vehicle launch rate. Models with increasing acceleration for the same road speeds show clear improvements in city traffic flow as a result of faster interactions at intersections and merging points. However, these improvements are relatively small when the gridlock is caused by long roads having many cars waiting to exit at the same intersection. In general, gridlock in our models begins at intersections regardless of the available road space in the network. △ Less

Submitted 30 December, 2023; originally announced January 2024.

Comments: 28 pages, 13 figures, published as IBM Research Report RC25550 in 2015; https://dominoweb.draco.res.ibm.com/reports/rc25550.pdf

Report number: RC25550

Fast offset corrected in-memory training

Authors: Malte J. Rasch, Fabio Carta, Omebayode Fagbohungbe, Tayfun Gokmen

Abstract: In-memory computing with resistive crossbar arrays has been suggested to accelerate deep-learning workloads in highly efficient manner. To unleash the full potential of in-memory computing, it is desirable to accelerate the training as well as inference for large deep neural networks (DNNs). In the past, specialized in-memory training algorithms have been proposed that not only accelerate the forw… ▽ More In-memory computing with resistive crossbar arrays has been suggested to accelerate deep-learning workloads in highly efficient manner. To unleash the full potential of in-memory computing, it is desirable to accelerate the training as well as inference for large deep neural networks (DNNs). In the past, specialized in-memory training algorithms have been proposed that not only accelerate the forward and backward passes, but also establish tricks to update the weight in-memory and in parallel. However, the state-of-the-art algorithm (Tiki-Taka version 2 (TTv2)) still requires near perfect offset correction and suffers from potential biases that might occur due to programming and estimation inaccuracies, as well as longer-term instabilities of the device materials. Here we propose and describe two new and improved algorithms for in-memory computing (Chopped-TTv2 (c-TTv2) and Analog Gradient Accumulation with Dynamic reference (AGAD)), that retain the same runtime complexity but correct for any remaining offsets using choppers. These algorithms greatly relax the device requirements and thus expanding the scope of possible materials potentially employed for such fast in-memory DNN training. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 14 pages, 10 figures

Neural Network Training with Asymmetric Crosspoint Elements

Authors: Murat Onen, Tayfun Gokmen, Teodor K. Todorov, Tomasz Nowicki, Jesus A. del Alamo, John Rozen, Wilfried Haensch, Seyoung Kim

Abstract: Analog crossbar arrays comprising programmable nonvolatile resistors are under intense investigation for acceleration of deep neural network training. However, the ubiquitous asymmetric conductance modulation of practical resistive devices critically degrades the classification performance of networks trained with conventional algorithms. Here, we describe and experimentally demonstrate an alterna… ▽ More Analog crossbar arrays comprising programmable nonvolatile resistors are under intense investigation for acceleration of deep neural network training. However, the ubiquitous asymmetric conductance modulation of practical resistive devices critically degrades the classification performance of networks trained with conventional algorithms. Here, we describe and experimentally demonstrate an alternative fully-parallel training algorithm: Stochastic Hamiltonian Descent. Instead of conventionally tuning weights in the direction of the error function gradient, this method programs the network parameters to successfully minimize the total energy (Hamiltonian) of the system that incorporates the effects of device asymmetry. We provide critical intuition on why device asymmetry is fundamentally incompatible with conventional training algorithms and how the new approach exploits it as a useful feature instead. Our technique enables immediate realization of analog deep learning accelerators based on readily available device technologies. △ Less

Submitted 31 January, 2022; originally announced January 2022.

A flexible and fast PyTorch toolkit for simulating training and inference on analog crossbar arrays

Authors: Malte J. Rasch, Diego Moreda, Tayfun Gokmen, Manuel Le Gallo, Fabio Carta, Cindy Goldberg, Kaoutar El Maghraoui, Abu Sebastian, Vijay Narayanan

Abstract: We introduce the IBM Analog Hardware Acceleration Kit, a new and first of a kind open source toolkit to simulate analog crossbar arrays in a convenient fashion from within PyTorch (freely available at https://github.com/IBM/aihwkit). The toolkit is under active development and is centered around the concept of an "analog tile" which captures the computations performed on a crossbar array. Analog t… ▽ More We introduce the IBM Analog Hardware Acceleration Kit, a new and first of a kind open source toolkit to simulate analog crossbar arrays in a convenient fashion from within PyTorch (freely available at https://github.com/IBM/aihwkit). The toolkit is under active development and is centered around the concept of an "analog tile" which captures the computations performed on a crossbar array. Analog tiles are building blocks that can be used to extend existing network modules with analog components and compose arbitrary artificial neural networks (ANNs) using the flexibility of the PyTorch framework. Analog tiles can be conveniently configured to emulate a plethora of different analog hardware characteristics and their non-idealities, such as device-to-device and cycle-to-cycle variations, resistive device response curves, and weight and output noise. Additionally, the toolkit makes it possible to design custom unit cell configurations and to use advanced analog optimization algorithms such as Tiki-Taka. Moreover, the backward and update behavior can be set to "ideal" to enable hardware-aware training features for chips that target inference acceleration only. To evaluate the inference accuracy of such chips over time, we provide statistical programming noise and drift models calibrated on phase-change memory hardware. Our new toolkit is fully GPU accelerated and can be used to conveniently estimate the impact of material properties and non-idealities of future analog technology on the accuracy for arbitrary ANNs. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: Submitted to AICAS2021

Algorithm for Training Neural Networks on Resistive Device Arrays

Authors: Tayfun Gokmen, Wilfried Haensch

Abstract: Hardware architectures composed of resistive cross-point device arrays can provide significant power and speed benefits for deep neural network training workloads using stochastic gradient descent (SGD) and backpropagation (BP) algorithm. The training accuracy on this imminent analog hardware however strongly depends on the switching characteristics of the cross-point elements. One of the key requ… ▽ More Hardware architectures composed of resistive cross-point device arrays can provide significant power and speed benefits for deep neural network training workloads using stochastic gradient descent (SGD) and backpropagation (BP) algorithm. The training accuracy on this imminent analog hardware however strongly depends on the switching characteristics of the cross-point elements. One of the key requirements is that these resistive devices must change conductance in a symmetrical fashion when subjected to positive or negative pulse stimuli. Here, we present a new training algorithm, so-called the "Tiki-Taka" algorithm, that eliminates this stringent symmetry requirement. We show that device asymmetry introduces an unintentional implicit cost term into the SGD algorithm, whereas in the "Tiki-Taka" algorithm a coupled dynamical system simultaneously minimizes the original objective function of the neural network and the unintentional cost term due to device asymmetry in a self-consistent fashion. We tested the validity of this new algorithm on a range of network architectures such as fully connected, convolutional and LSTM networks. Simulation results on these various networks show that whatever accuracy is achieved using the conventional SGD algorithm with symmetric (ideal) device switching characteristics the same accuracy is also achieved using the "Tiki-Taka" algorithm with non-symmetric (non-ideal) device switching characteristics. Moreover, all the operations performed on the arrays are still parallel and therefore the implementation cost of this new algorithm on array architectures is minimal; and it maintains the aforementioned power and speed benefits. These algorithmic improvements are crucial to relax the material specification and to realize technologically viable resistive crossbar arrays that outperform digital accelerators for similar training tasks. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Comments: 26 pages, 7 fiures

Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays

Authors: Hyungjun Kim, Malte Rasch, Tayfun Gokmen, Takashi Ando, Hiroyuki Miyazoe, Jae-Joon Kim, John Rozen, Seyoung Kim

Abstract: A resistive memory device-based computing architecture is one of the promising platforms for energy-efficient Deep Neural Network (DNN) training accelerators. The key technical challenge in realizing such accelerators is to accumulate the gradient information without a bias. Unlike the digital numbers in software which can be assigned and accessed with desired accuracy, numbers stored in resistive… ▽ More A resistive memory device-based computing architecture is one of the promising platforms for energy-efficient Deep Neural Network (DNN) training accelerators. The key technical challenge in realizing such accelerators is to accumulate the gradient information without a bias. Unlike the digital numbers in software which can be assigned and accessed with desired accuracy, numbers stored in resistive memory devices can only be manipulated following the physics of the device, which can significantly limit the training performance. Therefore, additional techniques and algorithm-level remedies are required to achieve the best possible performance in resistive memory device-based accelerators. In this paper, we analyze asymmetric conductance modulation characteristics in RRAM by Soft-bound synapse model and present an in-depth analysis on the relationship between device characteristics and DNN model accuracy using a 3-layer DNN trained on the MNIST dataset. We show that the imbalance between up and down update leads to a poor network performance. We introduce a concept of symmetry point and propose a zero-shifting technique which can compensate imbalance by programming the reference device and changing the zero value point of the weight. By using this zero-shifting method, we show that network performance dramatically improves for imbalanced synapse devices. △ Less

Submitted 2 August, 2019; v1 submitted 24 July, 2019; originally announced July 2019.

Design and Characterization of Superconducting Nanowire-Based Processors for Acceleration of Deep Neural Network Training

Authors: Murat Onen, Brenden A. Butters, Emily Toomey, Tayfun Gokmen, Karl K. Berggren

Abstract: Training of deep neural networks (DNNs) is a computationally intensive task and requires massive volumes of data transfer. Performing these operations with the conventional von Neumann architectures creates unmanageable time and power costs. Recent studies have shown that mixed-signal designs involving crossbar architectures are capable of achieving acceleration factors as high as 30,000x over the… ▽ More Training of deep neural networks (DNNs) is a computationally intensive task and requires massive volumes of data transfer. Performing these operations with the conventional von Neumann architectures creates unmanageable time and power costs. Recent studies have shown that mixed-signal designs involving crossbar architectures are capable of achieving acceleration factors as high as 30,000x over the state of the art digital processors. These approaches involve utilization of non-volatile memory (NVM) elements as local processors. However, no technology has been developed to-date that can satisfy the strict device requirements for the unit cell. This paper presents the superconducting nanowire-based processing element as a cross-point device. The unit cell has many programmable non-volatile states that can be used to perform analog multiplication. Importantly, these states are intrinsically discrete due to quantization of flux, which provides symmetric switching characteristics. Operation of these devices in a crossbar is described and verified with electro-thermal circuit simulations. Finally, validation of the concept in an actual DNN training task is shown using an emulator. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Training large-scale ANNs on simulated resistive crossbar arrays

Authors: Malte J. Rasch, Tayfun Gokmen, Wilfried Haensch

Abstract: Accelerating training of artificial neural networks (ANN) with analog resistive crossbar arrays is a promising idea. While the concept has been verified on very small ANNs and toy data sets (such as MNIST), more realistically sized ANNs and datasets have not yet been tackled. However, it is to be expected that device materials and hardware design constraints, such as noisy computations, finite num… ▽ More Accelerating training of artificial neural networks (ANN) with analog resistive crossbar arrays is a promising idea. While the concept has been verified on very small ANNs and toy data sets (such as MNIST), more realistically sized ANNs and datasets have not yet been tackled. However, it is to be expected that device materials and hardware design constraints, such as noisy computations, finite number of resistive states of the device materials, saturating weight and activation ranges, and limited precision of analog-to-digital converters, will cause significant challenges to the successful training of state-of-the-art ANNs. By using analog hardware aware ANN training simulations, we here explore a number of simple algorithmic compensatory measures to cope with analog noise and limited weight and output ranges and resolutions, that dramatically improve the simulated training performances on RPU arrays on intermediately to large-scale ANNs. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Efficient ConvNets for Analog Arrays

Authors: Malte J. Rasch, Tayfun Gokmen, Mattia Rigotti, Wilfried Haensch

Abstract: Analog arrays are a promising upcoming hardware technology with the potential to drastically speed up deep learning. Their main advantage is that they compute matrix-vector products in constant time, irrespective of the size of the matrix. However, early convolution layers in ConvNets map very unfavorably onto analog arrays, because kernel matrices are typically small and the constant time operati… ▽ More Analog arrays are a promising upcoming hardware technology with the potential to drastically speed up deep learning. Their main advantage is that they compute matrix-vector products in constant time, irrespective of the size of the matrix. However, early convolution layers in ConvNets map very unfavorably onto analog arrays, because kernel matrices are typically small and the constant time operation needs to be sequentially iterated a large number of times, reducing the speed up advantage for ConvNets. Here, we propose to replicate the kernel matrix of a convolution layer on distinct analog arrays, and randomly divide parts of the compute among them, so that multiple kernel matrices are trained in parallel. With this modification, analog arrays execute ConvNets with an acceleration factor that is proportional to the number of kernel matrices used per layer (here tested 16-128). Despite having more free parameters, we show analytically and in numerical experiments that this convolution architecture is self-regularizing and implicitly learns similar filters across arrays. We also report superior performance on a number of datasets and increased robustness to adversarial attacks. Our investigation suggests to revise the notion that mixed analog-digital hardware is not suitable for ConvNets. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Training LSTM Networks with Resistive Cross-Point Devices

Authors: Tayfun Gokmen, Malte Rasch, Wilfried Haensch

Abstract: In our previous work we have shown that resistive cross point devices, so called Resistive Processing Unit (RPU) devices, can provide significant power and speed benefits when training deep fully connected networks as well as convolutional neural networks. In this work, we further extend the RPU concept for training recurrent neural networks (RNNs) namely LSTMs. We show that the map** of recurre… ▽ More In our previous work we have shown that resistive cross point devices, so called Resistive Processing Unit (RPU) devices, can provide significant power and speed benefits when training deep fully connected networks as well as convolutional neural networks. In this work, we further extend the RPU concept for training recurrent neural networks (RNNs) namely LSTMs. We show that the map** of recurrent layers is very similar to the map** of fully connected layers and therefore the RPU concept can potentially provide large acceleration factors for RNNs as well. In addition, we study the effect of various device imperfections and system parameters on training performance. Symmetry of updates becomes even more crucial for RNNs; already a few percent asymmetry results in an increase in the test error compared to the ideal case trained with floating point numbers. Furthermore, the input signal resolution to device arrays needs to be at least 7 bits for successful training. However, we show that a stochastic rounding scheme can reduce the input signal resolution back to 5 bits. Further, we find that RPU device variations and hardware noise are enough to mitigate overfitting, so that there is less need for using dropout. We note that the models trained here are roughly 1500 times larger than the fully connected network trained on MNIST dataset in terms of the total number of multiplication and summation operations performed per epoch. Thus, here we attempt to study the validity of the RPU approach for large scale networks. △ Less

Submitted 31 May, 2018; originally announced June 2018.

Comments: 17 pages, 5 figures

Analog CMOS-based Resistive Processing Unit for Deep Neural Network Training

Authors: Seyoung Kim, Tayfun Gokmen, Hyung-Min Lee, Wilfried E. Haensch

Abstract: Recently we have shown that an architecture based on resistive processing unit (RPU) devices has potential to achieve significant acceleration in deep neural network (DNN) training compared to today's software-based DNN implementations running on CPU/GPU. However, currently available device candidates based on non-volatile memory technologies do not satisfy all the requirements to realize the RPU… ▽ More Recently we have shown that an architecture based on resistive processing unit (RPU) devices has potential to achieve significant acceleration in deep neural network (DNN) training compared to today's software-based DNN implementations running on CPU/GPU. However, currently available device candidates based on non-volatile memory technologies do not satisfy all the requirements to realize the RPU concept. Here, we propose an analog CMOS-based RPU design (CMOS RPU) which can store and process data locally and can be operated in a massively parallel manner. We analyze various properties of the CMOS RPU to evaluate the functionality and feasibility for acceleration of DNN training. △ Less

Submitted 20 June, 2017; originally announced June 2017.

Training Deep Convolutional Neural Networks with Resistive Cross-Point Devices

Authors: Tayfun Gokmen, O. Murat Onen, Wilfried Haensch

Abstract: In a previous work we have detailed the requirements to obtain a maximal performance benefit by implementing fully connected deep neural networks (DNN) in form of arrays of resistive devices for deep learning. This concept of Resistive Processing Unit (RPU) devices we extend here towards convolutional neural networks (CNNs). We show how to map the convolutional layers to RPU arrays such that the p… ▽ More In a previous work we have detailed the requirements to obtain a maximal performance benefit by implementing fully connected deep neural networks (DNN) in form of arrays of resistive devices for deep learning. This concept of Resistive Processing Unit (RPU) devices we extend here towards convolutional neural networks (CNNs). We show how to map the convolutional layers to RPU arrays such that the parallelism of the hardware can be fully utilized in all three cycles of the backpropagation algorithm. We find that the noise and bound limitations imposed due to analog nature of the computations performed on the arrays effect the training accuracy of the CNNs. Noise and bound management techniques are presented that mitigate these problems without introducing any additional complexity in the analog circuits and can be addressed by the digital circuits. In addition, we discuss digitally programmable update management and device variability reduction techniques that can be used selectively for some of the layers in a CNN. We show that combination of all those techniques enables a successful application of the RPU concept for training CNNs. The techniques discussed here are more general and can be applied beyond CNN architectures and therefore enables applicability of RPU approach for large class of neural network architectures. △ Less

Submitted 22 May, 2017; originally announced May 2017.

Comments: 22 pages, 6 figures, 2 tables

Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices

Authors: Tayfun Gokmen, Yurii Vlasov

Abstract: In recent years, deep neural networks (DNN) have demonstrated significant business impact in large scale analysis and classification tasks such as speech recognition, visual object detection, pattern extraction, etc. Training of large DNNs, however, is universally considered as time consuming and computationally intensive task that demands datacenter-scale computational resources recruited for man… ▽ More In recent years, deep neural networks (DNN) have demonstrated significant business impact in large scale analysis and classification tasks such as speech recognition, visual object detection, pattern extraction, etc. Training of large DNNs, however, is universally considered as time consuming and computationally intensive task that demands datacenter-scale computational resources recruited for many days. Here we propose a concept of resistive processing unit (RPU) devices that can potentially accelerate DNN training by orders of magnitude while using much less power. The proposed RPU device can store and update the weight values locally thus minimizing data movement during training and allowing to fully exploit the locality and the parallelism of the training algorithm. We identify the RPU device and system specifications for implementation of an accelerator chip for DNN training in a realistic CMOS-compatible technology. For large DNNs with about 1 billion weights this massively parallel RPU architecture can achieve acceleration factors of 30,000X compared to state-of-the-art microprocessors while providing power efficiency of 84,000 GigaOps/s/W. Problems that currently require days of training on a datacenter-size cluster with thousands of machines can be addressed within hours on a single RPU accelerator. A system consisted of a cluster of RPU accelerators will be able to tackle Big Data problems with trillions of parameters that is impossible to address today like, for example, natural speech recognition and translation between all world languages, real-time analytics on large streams of business and scientific data, integration and analysis of multimodal sensory data flows from massive number of IoT (Internet of Things) sensors. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Comments: 19 pages, 5 figures, 2 tables

Journal ref: Front. Neurosci 10, 333 (2016)

Suns-V$_\textrm{OC}$ characteristics of high performance kesterite solar cells

Authors: Oki Gunawan, Tayfun Gokmen, David B. Mitzi

Abstract: Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanism… ▽ More Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanisms that could impact the $V_{OC}$, even at 1 sun for lower performing samples. These V$_{OC}$ limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-$V_{OC}$ measurements with different monochromatic illumination. These limiting factors may also contribute to an artificially lower $J_{SC}$-$V_{OC}$ diode ideality factor. △ Less

Submitted 9 June, 2014; originally announced June 2014.

Comments: 9 pages, 9 figures, 1 supplementary material

Journal ref: Journal of Applied Physics 116, 084504 (2014)

Effective Mass and Spin Susceptibility of Dilute Two-Dimensional Holes in GaAs

Authors: YenTing Chiu, Medini Padmanabhan, T. Gokmen, J. Shabani, E. Tutuc, M. Shayegan, R. Winkler

Abstract: We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2… ▽ More We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2 (in units of the free electron mass). Despite the relatively large $r_{s}$ in our 2D system, the measured $m^{*}$ is in good agreement with the results of our energy band calculations which do not take interactions into account. We hen apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure $m^{*}$ for the populated subband. We find that this latter $m^{*}$ is surprisingly close to the $m^{*}$ we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations. △ Less

Submitted 5 March, 2012; v1 submitted 22 June, 2011; originally announced June 2011.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 84, 155459 (2011)

Transference of Transport Anisotropy to Composite Fermions

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vani… ▽ More When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vanishes at a half-filled Landau level and CFs exhibit Fermi-liquid-like properties, similar to their zero-field electron counterparts. However, being solely influenced by interactions, CFs should possess no memory whatever of the electron parameters. Here we address a fundamental question: Does an anisotropy of the electron effective mass and Fermi surface (FS) survive composite fermionization? We measure the resistance of CFs in AlAs quantum wells where electrons occupy an elliptical FS with large eccentricity and anisotropic effective mass. Similar to their electron counterparts, CFs also exhibit anisotropic transport, suggesting an anisotropy of CF effective mass and FS. △ Less

Submitted 28 September, 2010; originally announced September 2010.

Comments: 5 pages, 5 figures

Journal ref: Nature Phys.6:621-624,2010

Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for smal… ▽ More We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for small values of valley polarization but turns insulating (dR/dT < 0) as they are driven to full valley polarization. The results highlight the importance of discrete degrees of freedom in the transport properties of composite Fermions and the similarity between composite Fermions and electrons. △ Less

Submitted 15 August, 2010; originally announced August 2010.

Comments: 4+ figures, 2 figures

Journal ref: Solid State Communications 150, 1165 (2010)

Contrast between spin and valley degrees of freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m*… ▽ More We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m* data with the measured spin and valley susceptibilities, we find that the renormalized effective Lande g-factor strongly depends on valley occupation, but the renormalized conduction-band deformation potential is nearly independent of the spin occupation. △ Less

Submitted 15 August, 2010; originally announced August 2010.

Comments: 4+ pages, 2 figures

Journal ref: Phys. Rev. B 81, 235305 (2010)

Composite fermion valley polarization energies: Evidence for particle-hole asymmetry

Authors: Medini Padmanabhan, Tayfun Gokmen, Mansour Shayegan

Abstract: In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy need… ▽ More In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy needed to completely valley polarize the CFs around $ν= 1/2$ is considerably smaller than the corresponding value for CFs around $ν= 3/2$ thus betraying a particle-hole symmetry breaking. △ Less

Submitted 7 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. B 81, 113301 (2010)

Ferromagnetic Fractional Quantum Hall States in a Valley-Degenerate Two-Dimensional Electron System

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain… ▽ More We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain. In the absence of a theory for a system with anisotropic valleys, we compare the energy gaps measured at $ν= 1/3$ and 5/3 to the available theory developed for single-valley, two-spin systems, and find that the gaps and their rates of rise with strain are much smaller than predicted. △ Less

Submitted 7 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. Lett. 104, 016805 (2010)

Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

Authors: J. Shabani, T. Gokmen, Y. T. Chiu, M. Shayegan

Abstract: We report the observation of develo** fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they… ▽ More We report the observation of develo** fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction. △ Less

Submitted 11 September, 2009; originally announced September 2009.

Comments: submitted for publication

Journal ref: Phys. Rev. Lett. 103, 256802 (2009)

Density dependence of valley polarization energy for composite fermions

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative a… ▽ More In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative agreement, but there is an unexpected trend: The measured composite fermion valley polarization energy, normalized to the Coulomb energy, decreases with decreasing density. △ Less

Submitted 3 July, 2009; v1 submitted 2 July, 2009; originally announced July 2009.

Journal ref: Phys. Rev. B 80, 035423 (2009)

Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system

Authors: T. Gokmen, Medini Padmanabhan, K. Vakili, E. Tutuc, M. Shayegan

Abstract: We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven… ▽ More We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven to full spin-polarization via the application of a strong parallel magnetic field, m* is suppressed down to values near or even below the band mass. Our results are consistent with the previously reported measurements on wide AlAs quantum wells where the electrons occupy an in-plane valley with an anisotropic Fermi contour and effective mass, and suggest that the effective mass suppression upon complete spin polarization is a genuine property of interacting two-dimensional electrons. △ Less

Submitted 5 May, 2009; originally announced May 2009.

Comments: 6 pages, 7 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B. 79, 195311 (2009)

Correlated States of Electrons in Wide Quantum Wells at Low Fillings: The Role of Charge Distribution Symmetry

Authors: J. Shabani, T. Gokmen, M. Shayegan

Abstract: Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a develo** fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ wh… ▽ More Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a develo** fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the $ν= 1/5$ fractional quantum Hall state. △ Less

Submitted 30 April, 2009; originally announced May 2009.

Comments: submitted for publication

Journal ref: Phys. Rev. Lett. 103 046805 (2009)

Effective mass suppression in a ferromagnetic two-dimensional electron liquid

Authors: Reza Asgari, T. Gokmen, B. Tanatar, Medini Padmanabhan, M. Shayegan

Abstract: We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong… ▽ More We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong coupling limit, in good agreement with the results of recent experimental measurements. △ Less

Submitted 3 June, 2009; v1 submitted 19 February, 2009; originally announced February 2009.

Comments: 5 pages, 4 figures, To appear in Phys. Rev. B

Journal ref: Phys. Rev. B 79, 235324 (2009)

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

Authors: A. Tsukazaki, A. Ohtomo, M. Kawasaki, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, T. Gokmen, J. Shabani, M. Shayegan

Abstract: We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in th… ▽ More We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6 x 10^11 to 1.6 x 10^12 cm^-2, corresponding to a range of 3.1 < rs < 5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction. △ Less

Submitted 2 December, 2008; v1 submitted 27 November, 2008; originally announced November 2008.

Comments: 4 pages, 4figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B, 78, 233308 (2008).

Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons

Authors: T. Gokmen, Medini Padmanabhan, O. Gunawan, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Abstract: We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect… ▽ More We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of non-interacting calculations, reflecting the role of electron-electron interaction. △ Less

Submitted 19 November, 2008; v1 submitted 19 November, 2008; originally announced November 2008.

Comments: 4+ pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233306 (2008)

Enhancement of valley susceptibility upon complete spin-polarization

Authors: Medini Padmanabhan, T. Gokmen, M. Shayegan

Abstract: Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs… ▽ More Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs electrons was observed to be higher in a single-valley system than its two-valley counterpart. △ Less

Submitted 12 October, 2008; originally announced October 2008.

Journal ref: Phys. Rev. B 78, 161301(R) (2008)

Dependence of Effective Mass on Spin and Valley Degrees of Freedom

Authors: T. Gokmen, Medini Padmanabhan, M. Shayegan

Abstract: We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-… ▽ More We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-polarized regime, the electron system exhibits an insulating behavior. △ Less

Submitted 10 October, 2008; originally announced October 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 146405 (2008)

Effective mass suppression in dilute, spin-polarized two-dimensional electron systems

Authors: Medini Padmanabhan, T. Gokmen, N. C. Bishop, M. Shayegan

Abstract: We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we… ▽ More We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we fully spin polarize the 2DES by subjecting it to strong parallel magnetic fields, m* is unexpectedly suppressed and falls even below the band mass. △ Less

Submitted 8 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 026402 (2008)

Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass

Authors: T. Gokmen, Medini Padmanabhan, E. Tutuc, M. Shayegan, S. De Palo, S. Moroni, Gaetano Senatore

Abstract: We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of inter… ▽ More We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of interaction. Yet the enhancement is suppressed compared to the results of quantum Monte Carlo based calculations that take the finite thickness of the electron layer into account but assume an isotropic effective mass equal to sqrt(ml.mt). Proper treatment of an interacting 2D system with an anisotropic effective mass therefore remains a theoretical challenge. △ Less

Submitted 8 November, 2007; originally announced November 2007.

Comments: 4 pages, 3 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 76, 233301 (2007)

Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

Authors: O. Gunawan, T. Gokmen, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the s… ▽ More An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field. △ Less

Submitted 2 July, 2007; originally announced July 2007.

Comments: 4 figures, submitted for publication

Journal ref: Physical Review Letter 100, 03660 (2008)

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Authors: O. Gunawan, T. Gokmen, K. Vakili, M. Padmanabhan, E. P. De Poortere, M. Shayegan

Abstract: Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the qua… ▽ More Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 4 pages, 2 figures

Journal ref: Nature Physics 3, 388 - 391 (2007)

Dependence of persistent gaps at Landau level crossings on relative spin

Authors: K. Vakili, T. Gokmen, O. Gunawan, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientatio… ▽ More We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientation of the crossing levels, with parallel-spin crossings exhibiting larger gaps than antiparallel-spin crossings. △ Less

Submitted 2 June, 2006; originally announced June 2006.

Comments: 4 pages, 3 figures, submitted for publication

Journal ref: Phys. Rev. Lett. 97, 116803 (2006)

Valley susceptibility of an interacting two-dimensional electron system

Authors: O. Gunawan, Y. P. Shkolnikov, K. Vakili, T. Gokmen, E. P. De Poortere, M. Shayegan

Abstract: We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable r… ▽ More We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom. △ Less

Submitted 29 May, 2006; originally announced May 2006.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 97, 186 404 (2006).