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Effective uniaxial dielectric function tensor and optical phonons in ($\bar{2}01$)-plane oriented $β$-Ga$_2$O$_3$ films with equally-distributed six-fold rotation domains
Authors:
Alyssa Mock,
Steffen Richter,
Alexis Papamichail,
Vallery Stanishev,
Misagh Ghezellou,
Jawad Ul-Hassan,
Andreas Popp,
Saud Bin Anooz,
Daniella Gogova,
Praneeth Ranga,
Sriram Krishnamoorthy,
Rafal Korlacki,
Mathias Schubert,
Vanya Darakchieva
Abstract:
Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-inf…
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Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-infrared ellipsometry data from undoped and electrically insulating films with an effective uniaxial dielectric tensor based on projections of all phonon modes within the rotation domains parallel and perpendicular to the sample normal, i.e., to the reciprocal lattice vector $\mathbf{g}_{\bar{2}01}$. Two effective response functions are described by model, and found sufficient to calculate ellipsometry data that best-match measured ellipsometry data from a representative film. We propose to render either effective dielectric functions, or inverse effective dielectric functions, each separately for electric field directions parallel and perpendicular to $\mathbf{g}_{\bar{2}01}$, by sums of Lorentz oscillators, which permit to determine either sets of transverse optical phonon mode parameters, or sets of longitudinal optical phonon mode parameters, respectively. Transverse optical modes common to both dielectric functions can be traced back to single crystal modes with $B_{\mathrm{u}}$ character, while modes with $A_{\mathrm{u}}$ character only appear within the dielectric function for polarization perpendicular to the sample surface. The thereby obtained parameter sets reveal all phonon modes anticipated from averaging over the six-fold rotation domains of single crystal $β$-Ga$_2$O$_3$, but with slightly shifted transverse optical, and completely different longitudinal optical phonon modes.
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Submitted 10 April, 2024;
originally announced April 2024.
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Response to "Comment on 'A novel two-dimensional boron-carbon-nitride (BCN) monolayer: A first-principles insight [J. Appl. Phys. 2021, 130, 114301]'"
Authors:
Asadollah Bafekry,
Mosayeb Naseri,
Mohamed M. Fadlallah,
Ismaeil Abdolhosseini Sarsari,
Mehrdad faraji,
Abbas bagheri khatibani,
Mitra Ghergherehchi,
Daniela Gogova
Abstract:
Recently, reported a comments on the our paper [JAP21-AR-03574R].. For clarification, we applied the fingerprint theory to examine the similarity between the distinct structures. The fingerprint function is a crystal structure descriptor, an 1D-function related to the pair correlation function and diffraction patterns. It does not depend on absolute atomic coordinates, but only on interatomic dist…
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Recently, reported a comments on the our paper [JAP21-AR-03574R].. For clarification, we applied the fingerprint theory to examine the similarity between the distinct structures. The fingerprint function is a crystal structure descriptor, an 1D-function related to the pair correlation function and diffraction patterns. It does not depend on absolute atomic coordinates, but only on interatomic distances. Small deviations in atomic positions will influence the fingerprints only slightly [1-3]. Fingerprint theory allows quantification of the degree of order and complexity of a crystal structure.
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Submitted 14 August, 2023; v1 submitted 7 May, 2022;
originally announced May 2022.
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Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: A first-principles study
Authors:
A. Bafekry,
M. Faraji,
M. M. Fadlallah,
H. R. Jappor,
S. Karbasizadeh,
M. Ghergherehchi,
D. Gogova
Abstract:
In a very recent accomplishment, the two-dimensional form of Biphenylene network (BPN) has been successfully fabricated [Fan et al., Science, 372, 852-856 (2021)]. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density functional theory-based first-principles calculations, for the first time, in order to gain insight into the structural, elec…
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In a very recent accomplishment, the two-dimensional form of Biphenylene network (BPN) has been successfully fabricated [Fan et al., Science, 372, 852-856 (2021)]. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density functional theory-based first-principles calculations, for the first time, in order to gain insight into the structural, electronic and optical properties of this promising nanomaterial. Our theoretica results reveal the BPN structure is constructed from three rings of tetragon, hexagon and octagon, meanwhile the electron localization function shows very strong bonds between the C atoms in the structure. The dynamical stability of BPN is verified via the phonon band dispersion calculations. The mechanical properties reveal the brittle behavior of BPN monolayer. The Youngs modulus has been computed as 0.1 TPa, which is smaller than the corresponding value of graphene, while the Poissons ratio determined to be 0.26 is larger than that of graphene. The band structure is evaluated to show the electronic features of the material; determining the BPN monolayer as metallic with a band gap of zero. The optical properties (real and imaginary parts of the dielectric function, and the absorption spectrum) uncover BPN as an insulator along the zz direction, while owning metallic properties in xx and yy directions. We anticipate that our discoveries will pave the way to the successful implementation of this new 2D allotrope of carbon in advanced nanoelectronics.
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Submitted 31 May, 2021;
originally announced May 2021.
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Ion-Beam Modification of Metastable Gallium Oxide Polymorphs
Authors:
D. I. Tetelbaum,
A. A. Nikolskaya,
D. S. Korolev,
A. I. Belov,
V. N. Trushin,
Yu. A. Dudin,
A. N. Mikhaylov,
A. I. Pechnikov,
M. P. Scheglov,
V. I. Nikolaev,
D. Gogova
Abstract:
Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of i…
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Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion do**, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient do** strategies.
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Submitted 27 February, 2021;
originally announced March 2021.
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Ion implantation in \b{eta}-Ga2O3: physics and technology
Authors:
Alena Nikolskaya,
Evgenia Okulich,
Dmitry Korolev,
Anton Stepanov,
Dmitry Nikolichev,
Alexey Mikhaylov,
David Tetelbaum,
Aleksei Almaev,
Charles Airton Bolzan,
Antônio Jr Buaczik,
Raquel Giulian,
Pedro Luis Grande,
Ashok Kumar,
Mahesh Kumar,
Daniela Gogova
Abstract:
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fiel…
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Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.
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Submitted 26 February, 2021;
originally announced February 2021.
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MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties
Authors:
A. Bafekry,
M. Faraji,
Do M. Hoat,
M. M. Fadlallah,
M. Shahrokhi,
F. Shojaei,
D. Gogova,
M. Ghergherehchi
Abstract:
Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, optical and photocatalytic properties using hybrid density functional theory (HSE06-DFT). Phonon band dispersion calculations reveal the dynamical stabili…
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Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, optical and photocatalytic properties using hybrid density functional theory (HSE06-DFT). Phonon band dispersion calculations reveal the dynamical stability of MoSi2N4 monolayer structure. Furthermore, the mechanical study confirms the stability of MoSi2N4 monolayer. As compared to the corresponding value of graphene, we find the Youngs modulus decreases by 30% while the Poissons ratio increases by 30%. In addition, its work function is very similar to that of phosphorene and MoS2 monolayers. The electronic structure investigation shows the MoSi2N4 monolayer is an indirect bandgap semiconductor. We have determined the bandgap using the HSE06 (GGA) is 2.35 (1.79) eV, which is an overestimated (underestimated) value of the experimental bandgap (1.99 eV). The thermoelectric study shows a good thermoelectric performance of the MoSi2N4 monolayer with a figure of merit slightly larger than unity at high temperatures. The optical analysis using the RPA method constructed over HSE06 shows that the first absorption peak of the MoSi2N4 monolayer for in-plane polarization is located in the visible range of spectrum, i.e. it is a promising candidate for advancing optoelectronic nanodevices. The photocatalytic study indicates the MoSi2N4 monloayer can be a promising photocatalyst for water splitting as well as and CO2 reduction. In summary, the fascinating MoSi2N4 monloayer is a promising 2D material in many applications due to its unique physical properties.
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Submitted 9 September, 2020;
originally announced September 2020.
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High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates
Authors:
D. Gogova,
V. S. Olsen,
C. Bazioti,
I. -H. Lee,
Ø. Prytz,
L. Vines,
A. Yu. Kuznetsov
Abstract:
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmission electron microscopy (TEM) measurements. TEM verified that the layers are single-crystalline of hexagonal phase, exhibiting epitaxial relationship…
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Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmission electron microscopy (TEM) measurements. TEM verified that the layers are single-crystalline of hexagonal phase, exhibiting epitaxial relationship with the substrate. The screw-type threading dislocations originating from the interface were identified as dominant extended defects. More specifically, we report a pioneering measurement of the dislocation density in this material. Even though, there is no literature data for direct comparison, such values are typical of heteroepitaxial growth of III-nitride layers without applying defect density reduction strategies. The films demonstrated a record electron mobility. The optical bandgaps of 1.86 eV and 1.72 eV were determined for the stoichiometric and Zn-rich samples, respectively. As such, we conclude that ZnSnN2 is an earth-abundant, environmentally-friendly semiconductor and is a promising candidate for cost efficient components in electronics and photonics.
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Submitted 19 June, 2020;
originally announced June 2020.
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Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers
Authors:
D. A. Zatsepin,
D. W. Boukhvalov,
A. F. Zatsepin,
Yu. A. Kuznetsova,
D. Gogova,
V. Ya. Shur,
A. A. Esin
Abstract:
Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure map** was coupled to Density functional theory calculations.
Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure map** was coupled to Density functional theory calculations.
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Submitted 29 January, 2018;
originally announced January 2018.
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Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $β$-gallium oxide single crystals
Authors:
M. Schubert,
R. Korlacki,
S. Knight,
T. Hofmann,
S. Schöche,
V. Darakchieva,
E. Janzén,
B. Monemar,
D. Gogova,
Q. -T. Thieu,
R. Togashi,
H. Murakami,
Y. Kumagai,
K. Goto,
A. Kuramata,
S. Yamakoshi,
M. Higashiwaki
Abstract:
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $β$-Ga$_2$O$_3$ single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and ($\bar{2}$01), are investigated by generalized spectrosc…
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We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $β$-Ga$_2$O$_3$ single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and ($\bar{2}$01), are investigated by generalized spectroscopic ellipsometry within infrared and farinfrared spectral regions. We determine the frequency dependence of 4 independent $β$-Ga$_2$O$_3$ Cartesian dielectric function tensor elements by matching large sets of experimental data using a point by point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infared and farinfrared active transverse optic phonon modes with $A_u$ and $B_u$ symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in $β$-Ga$_2$O$_3$. We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in $β$-Ga$_2$O$_3$ and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and farinfrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for $β$-Ga$_2$O$_3$.
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Submitted 28 December, 2015;
originally announced December 2015.
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Surface roughness evolution in a solid-on-solid model of epitaxial growth
Authors:
Petar P. Petrov,
Daniela Gogova
Abstract:
The paper presents results from kinetic Monte Carlo simulations of kinetic surface roughening using an important and experimentally relevant model of epitaxial growth -- the solid-on-solid model with Arrhenius dynamics. A restriction on diffusing adatoms is included allowing hop** down only at steps of height one monolayer in order to avoid possibly unrealistic events of jum** from arbitrarily…
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The paper presents results from kinetic Monte Carlo simulations of kinetic surface roughening using an important and experimentally relevant model of epitaxial growth -- the solid-on-solid model with Arrhenius dynamics. A restriction on diffusing adatoms is included allowing hop** down only at steps of height one monolayer in order to avoid possibly unrealistic events of jum** from arbitrarily high steps. Simulation results and precise analytic expressions representing the time evolution of surface roughness do not depend on the substrate size and clearly put forward the conclusion that for any basic set of parameters the model approaches in asymptotic limit the usual random deposition process with growth exponent $β=1/2$. At high temperatures, it is preceded by a long transient regime characterized by a smooth surface covered with porous pillars and described by a power law with $β=3/4$.
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Submitted 14 August, 2014; v1 submitted 2 January, 2014;
originally announced January 2014.
