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Showing 1–3 of 3 results for author: Goertz, J

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  1. arXiv:2402.17704  [pdf, other

    q-bio.QM cs.LG stat.ML

    Transfer Learning Bayesian Optimization to Design Competitor DNA Molecules for Use in Diagnostic Assays

    Authors: Ruby Sedgwick, John P. Goertz, Molly M. Stevens, Ruth Misener, Mark van der Wilk

    Abstract: With the rise in engineered biomolecular devices, there is an increased need for tailor-made biological sequences. Often, many similar biological sequences need to be made for a specific application meaning numerous, sometimes prohibitively expensive, lab experiments are necessary for their optimization. This paper presents a transfer learning design of experiments workflow to make this developmen… ▽ More

    Submitted 27 February, 2024; originally announced February 2024.

  2. arXiv:2011.10575  [pdf, other

    q-bio.QM cs.LG stat.ML

    Design of Experiments for Verifying Biomolecular Networks

    Authors: Ruby Sedgwick, John Goertz, Molly Stevens, Ruth Misener, Mark van der Wilk

    Abstract: There is a growing trend in molecular and synthetic biology of using mechanistic (non machine learning) models to design biomolecular networks. Once designed, these networks need to be validated by experimental results to ensure the theoretical network correctly models the true system. However, these experiments can be expensive and time consuming. We propose a design of experiments approach for v… ▽ More

    Submitted 25 November, 2020; v1 submitted 20 November, 2020; originally announced November 2020.

    Comments: Comment: Updated to correct typo "that that" => "that"

  3. arXiv:1801.02966  [pdf

    cond-mat.mtrl-sci physics.app-ph

    Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

    Authors: David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz, Vladimir M. Kaganer, Oliver Brandt, Sergio Fernández-Garrido, Lutz Geelhaar

    Abstract: We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number… ▽ More

    Submitted 9 January, 2018; originally announced January 2018.

    Comments: The final publication is available at link.springer.com

    Journal ref: Nano Research, Volume 11, Issue 1, 565 (2018)