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Electronically-driven switching of topology in LaSbTe
Authors:
J. Bannies,
M. Michiardi,
H. -H. Kung,
S. Godin,
J. W. Simonson,
M. Oudah,
M. Zonno,
S. Gorovikov,
S. Zhdanovich,
I. S. Elfimov,
A. Damascelli,
M. C. Aronson
Abstract:
In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus so far, the precise and easy control of topology in a single material remains largely unexplored. Here, we demonstrate full experimental control over the topolo…
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In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus so far, the precise and easy control of topology in a single material remains largely unexplored. Here, we demonstrate full experimental control over the topological Dirac nodal loop in the square-net material LaSb$_\mathrm{x}$Te$_\mathrm{2-x}$ by chemical substitution and electron do**. Using angle-resolved photoemission spectroscopy (ARPES), we show that changing the antimony concentration x from 0.9 to 1.0 in the bulk opens a gap as large as 400 meV in the nodal loop. Our symmetry analysis based on single-crystal X-ray diffraction and a minimal tight binding model establishes that the breaking of \textit{n} glide symmetry in the square-net layer is responsible for the opening of the gap. Remarkably, we can also realize this topological phase transition \textit{in situ} on the surface of LaSb$_\mathrm{x}$Te$_\mathrm{2-x}$ by chemical gating using potassium deposition, which enables the reversible switching of the topology from gapped to gapless nodal loop. The underlying control parameter for the structural and topological transition in the bulk and on the surface is the electron concentration. It opens a pathway towards applications in devices based on switching topology by electrostatic gating.
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Submitted 11 July, 2024;
originally announced July 2024.
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Method of Mechanical Exfoliation of Bismuth with Micro-Trench Structures
Authors:
Oulin Yu,
Raphaela Allgayer,
Simon Godin,
Jacob Lalande,
Paolo Fossati,
Chunwei Hsu,
Thomas Szkopek,
Guillaume Gervais
Abstract:
The discovery of graphene led to a burst in search for 2D materials originating from layered atomic crystals coupled by van der Waals force. While bulk bismuth crystals share this layered crystal structure, unlike other group V members of the periodic table, its interlayer bonds are stronger such that traditional mechanical cleavage and exfoliation techniques have shown to be inefficient. In this…
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The discovery of graphene led to a burst in search for 2D materials originating from layered atomic crystals coupled by van der Waals force. While bulk bismuth crystals share this layered crystal structure, unlike other group V members of the periodic table, its interlayer bonds are stronger such that traditional mechanical cleavage and exfoliation techniques have shown to be inefficient. In this work, we present a novel mechanical cleavage method for exfoliating bismuth by utilizing the stress concentration effect induced by micro-trench SiO2 structures. As a result, the exfoliated bismuth flakes can achieve thicknesses down to the sub-10 nm range which are analyzed by AFM and Raman spectroscopy.
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Submitted 5 June, 2024; v1 submitted 2 November, 2023;
originally announced November 2023.
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Critical Role of Disorder for Superconductivity in the Series of Epitaxial Ti(O,N) Films
Authors:
Fengmiao Li,
Oliver Dicks,
Myung-Geun Han,
Solveig Aamlid,
Giorgio Levy,
Ronny Sutarto,
Chong Liu,
Hsiang-Hsi Kung,
Oleksandr Foyevstov,
Simon Godin,
Bruce A. Davidson,
Andrea Damascelli,
Yimei Zhu,
Christoph Heil,
Ilya Elfimov,
George A. Sawatzky,
Ke Zou
Abstract:
Experimental manipulation of superconductivity is of paramount importance, not only for practical applications but also for identifying the key factors involved in electron pairing. In this work, we have undertaken a meticulous study of the superconductivity in a series of titanium compounds with a rocksalt structure, synthesized as epitaxial films. We find that substituting nitrogen (N) for oxyge…
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Experimental manipulation of superconductivity is of paramount importance, not only for practical applications but also for identifying the key factors involved in electron pairing. In this work, we have undertaken a meticulous study of the superconductivity in a series of titanium compounds with a rocksalt structure, synthesized as epitaxial films. We find that substituting nitrogen (N) for oxygen (O) in titanium monoxide (TiO) with the stoichiometry close to TiO$_{0.6}$N$_{0.4}$ leads to superconductivity with a transition temperature (T$_c$) of ~2.6 K, about five times higher than that of TiO at ~0.5 K and half as high as the T$_c$ of ~6 K in titanium nitride (TiN). However, Eliashberg theoretical calculations predict similar Tc in TiO, Ti oxynitride and TiN. The analysis of electron mean free path suggests the presence of significant disorder in TiO and a remarkable reduction in the impact of disorder in oxynitrides. Density functional theory (DFT) calculations reveal that disorder decreases the coherence of electronic states for non-zero momenta, which would degrade the influence of electron-phonon. Our findings demonstrate the disorder and superconductivity depend strongly on the N/O ratio, highlighting the critical role of disorder for superconductivity in this series of Ti(O,N) materials.
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Submitted 4 October, 2023;
originally announced October 2023.
