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Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation
Authors:
Evgeny M. Alexeev,
Nic Mullin,
Pablo Ares,
Harriet Nevison-Andrews,
Oleksandr V. Skrypka,
Tillmann Godde,
Aleksey Kozikov,
Lee Hague,
Yibo Wang,
Kostya S. Novoselov,
Laura Fumagalli,
Jamie K. Hobbs,
Alexander I. Tartakovskii
Abstract:
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional mate…
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The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering.
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Submitted 12 April, 2020;
originally announced April 2020.
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Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities
Authors:
O. Del Pozo-Zamudio,
A. Genco,
S. Schwarz,
F. Withers,
P. M. Walker,
T. Godde,
R. C. Schofield,
A. P. Rooney,
E. Prestat,
K. Watanabe,
T. Taniguchi,
C. Clark,
S. J. Haigh,
D. N. Krizhanovskii,
K. S. Novoselov,
A. I. Tartakovskii
Abstract:
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integr…
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Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.
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Submitted 4 June, 2020; v1 submitted 15 November, 2019;
originally announced November 2019.
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Dynamics of exciton magnetic polarons in CdMnSe/CdMgSe quantum wells: the effect of self-localization
Authors:
I. A. Akimov,
T. Godde,
K. V. Kavokin,
D. R. Yakovlev,
I. I. Reshina,
I. V. Sedova,
S. V. Sorokin,
S. V. Ivanov,
Yu. G. Kusrayev,
M. Bayer
Abstract:
We study the exciton magnetic polaron (EMP) formation in (Cd,Mn)Se/(Cd,Mg)Se diluted-magnetic-semiconductor quantum wells using time-resolved photoluminescence (PL). The magnetic field and temperature dependencies of this dynamics allow us to separate the non-magnetic and magnetic contributions to the exciton localization. We deduce the EMP energy of 14 meV, which is in agreement with time-integra…
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We study the exciton magnetic polaron (EMP) formation in (Cd,Mn)Se/(Cd,Mg)Se diluted-magnetic-semiconductor quantum wells using time-resolved photoluminescence (PL). The magnetic field and temperature dependencies of this dynamics allow us to separate the non-magnetic and magnetic contributions to the exciton localization. We deduce the EMP energy of 14 meV, which is in agreement with time-integrated measurements based on selective excitation and the magnetic field dependence of the PL circular polarization degree. The polaron formation time of 500 ps is significantly longer than the corresponding values reported earlier. We propose that this behavior is related to strong self-localization of the EMP, accompanied with a squeezing of the heavy-hole envelope wavefunction. This conclusion is also supported by the decrease of the exciton lifetime from 600 ps to 200 - 400 ps with increasing magnetic field and temperature.
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Submitted 7 January, 2017;
originally announced January 2017.
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Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization
Authors:
D. Schmidt,
T. Godde,
J. Schmutzler,
M. Aßmann,
J. Debus,
F. Withers,
E. M. Alexeev,
O. Del Pozo-Zamudio,
O. V. Skrypka,
K. S. Novoselov,
M. Bayer,
A. I. Tartakovskii
Abstract:
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also…
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We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied with strong changes in PL including suppression of the trion PL and decrease of the trion PL life-time, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and appearance of a pronounced slow PL decay component. In MoSe2 and WSe2 studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at T~10K. The observed behavior is a result of a complex interplay between influences of the specific energy ordering of bright and dark excitons in MoSe2 and WSe2, sample do**, trion and exciton localization and various temperature-dependent non-radiative processes.
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Submitted 13 August, 2016;
originally announced August 2016.
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WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
Authors:
F. Withers,
O. Del Pozo-Zamudio,
S. Schwarz,
S. Dufferwiel,
P. M. Walker,
T. Godde,
A. P. Rooney,
A. Gholinia,
C. R. Woods,
P. Blake,
S. J. Haigh,
K. Watanabe,
T. Taniguchi,
I. L. Aleiner,
A. K. Geim,
V. I. Falko,
A. I. Tartakovskii,
K. S. Novoselov
Abstract:
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext…
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Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.
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Submitted 19 November, 2015;
originally announced November 2015.
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All-optical formation of coherent dark states of silicon-vacancy spins in diamond
Authors:
Benjamin **ault,
Jonas N. Becker,
Carsten H. H. Schulte,
Carsten Arend,
Christian Hepp,
Tillmann Godde,
Alexander I. Tartakovskii,
Matthew Markham,
Christoph Becher,
Mete Atature
Abstract:
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum.…
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Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trap**. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
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Submitted 14 September, 2014;
originally announced September 2014.
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Magnetic field induced nutation of the exciton-polariton polarization in (Cd,Zn)Te crystals
Authors:
Tillmann Godde,
Mikhail Glazov,
Ilya Akimov,
Dmitri Yakovlev,
Henri Mariette,
Manfred Bayer
Abstract:
We study the polarization dynamics of exciton-polaritons propagating in sub-mm thick (Cd,Zn)Te bulk crystals using polarimetric time-of-flight techniques. The application of a magnetic field in Faraday geometry leads to synchronous temporal oscillations of all Stokes parameters of an initially linearly or circularly polarized, spectrally broad optical pulse of 150 fs duration propagating through t…
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We study the polarization dynamics of exciton-polaritons propagating in sub-mm thick (Cd,Zn)Te bulk crystals using polarimetric time-of-flight techniques. The application of a magnetic field in Faraday geometry leads to synchronous temporal oscillations of all Stokes parameters of an initially linearly or circularly polarized, spectrally broad optical pulse of 150 fs duration propagating through the crystal. Strong dispersion for photon energies close to the exciton resonance leads to stretching of the optical pulse to a duration of 200$-$300 ps and enhancement of magneto-optical effects such as the Faraday rotation and the non-reciprocal birefringence. The oscillation frequency of the exciton-polariton polarization increases with magnetic field $B$, reaching 10 GHz at $B\sim 5$T. Surprisingly, the relative contributions of Faraday rotation and non-reciprocal birefringence undergo strong changes with photon energy, which is attributed to a non-trivial spectral dependence of Faraday rotation in the vicinity of the exciton resonance. This leads to polarization nutation of the transmitted optical pulse in the time domain. The results are well explained by a model that accounts for Faraday rotation and magneto-spatial dispersion in zinc-blende crystals. We evaluate the exciton $g$-factor $|g_{\rm exc}|=0.2$ and the magneto-spatial constant $V= 5 \times 10^{-12}$ eVcm$\textup{T}^{-1}$.
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Submitted 14 May, 2013;
originally announced May 2013.
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Sub-nanosecond delay of light in (Cd,Zn)Te crystal
Authors:
T. Godde,
I. A. Akimov,
D. R. Yakovlev,
H. Mariette,
M. Bayer
Abstract:
We study excitonic polariton relaxation and propagation in bulk CdZnTe using time- resolved photoluminescence and time-of-flight techniques. Propagation of picosecond optical pulses through 0.745 mm thick crystal results in time delays up to 350 ps, depending on the photon energy. Optical pulses with 150 fs duration become strongly stretched. The spectral dependence of group velocity is consistent…
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We study excitonic polariton relaxation and propagation in bulk CdZnTe using time- resolved photoluminescence and time-of-flight techniques. Propagation of picosecond optical pulses through 0.745 mm thick crystal results in time delays up to 350 ps, depending on the photon energy. Optical pulses with 150 fs duration become strongly stretched. The spectral dependence of group velocity is consistent with the dispersion of the lower excitonic polariton branch. The lifetimes of excitonic polariton in the upper and lower branches are 1.5 and 3 ns, respectively.
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Submitted 9 July, 2010;
originally announced July 2010.
