Showing 1–50 of 78 results for author: Gmitra, M

Hydrostatic pressure control of the spin-orbit proximity effect and spin relaxation in a phosphorene-WSe$_2$ heterostructure

Authors: Marko Milivojević, Marcin Kurpas, Maedeh Rassekh, Dominik Legut, Martin Gmitra

Abstract: Effective control of interlayer interactions is a key element in modifying the properties of van der Waals heterostructures and the next step toward their practical applications. Focusing on the phosphorene-WSe$_2$ heterostructure, we demonstrate, using first-principles calculations, how the spin-orbit coupling can be transferred from WSe$_2$, a strong spin-orbit coupling material, to phosphorene… ▽ More Effective control of interlayer interactions is a key element in modifying the properties of van der Waals heterostructures and the next step toward their practical applications. Focusing on the phosphorene-WSe$_2$ heterostructure, we demonstrate, using first-principles calculations, how the spin-orbit coupling can be transferred from WSe$_2$, a strong spin-orbit coupling material, to phosphorene and further amplified by applying vertical pressure. We simulate external pressure by changing the interlayer distance between bilayer constituents and show that it is possible to tune the spin-orbit field of phosphorene holes in a controllable way. By fitting effective electronic states of the proposed Hamiltonian to the first principles data, we reveal that the spin-orbit coupling in phosphorene hole bands is enhanced more than two times for experimentally accessible pressures up to 17 kbar. Finally, we find that the pressure-enhanced spin-orbit coupling boosts the Dyakonov-Perel spin relaxation mechanism, reducing the spin lifetime of phosphorene holes by factor 4. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: 8 pages, 5 figures

Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure

Authors: Marko Milivojević, Martin Gmitra, Marcin Kurpas, Ivan Štich, Jaroslav Fabian

Abstract: We analyze the spin-orbit coupling effects in a three-degree twisted bilayer heterostructure made of graphene and an in-plane ferroelectric SnTe, with the goal of transferring the spin-orbit coupling from SnTe to graphene, via the proximity effect. Our results indicate that the point-symmetry breaking due to the incompatible mutual symmetry of the twisted monolayers and a strong hybridization has… ▽ More We analyze the spin-orbit coupling effects in a three-degree twisted bilayer heterostructure made of graphene and an in-plane ferroelectric SnTe, with the goal of transferring the spin-orbit coupling from SnTe to graphene, via the proximity effect. Our results indicate that the point-symmetry breaking due to the incompatible mutual symmetry of the twisted monolayers and a strong hybridization has a massive impact on the spin splitting in graphene close to the Dirac point, with the spin splitting values greater than 20 meV. The band structure and spin expectation values of graphene close to the Dirac point can be described using a symmetry-free model, triggering different types of interaction with respect to the threefold symmetric graphene/transition-metal dichalcogenide heterostructure. We show that the strong hybridization of the Dirac cone's right movers with the SnTe band gives rise to a large asymmetric spin splitting in the momentum space. Furthermore, we discover that the ferroelectricity-induced Rashba spin-orbit coupling in graphene is the dominant contribution to the overall Rashba field, with the effective in-plane electric field that is almost aligned with the (in-plane) ferroelectricity direction of the SnTe monolayer. We also predict an anisotropy of the in-plane spin relaxation rates. Our results demonstrate that the group-IV monochalcogenides MX (M=Sn, Ge; X=S, Se, Te) are a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. △ Less

Submitted 28 June, 2024; v1 submitted 14 February, 2024; originally announced February 2024.

Comments: 9 pages, 6 figures

Journal ref: 2D Materials 11, 035036 (2024)

Tuning proximity spin-orbit coupling in graphene/NbSe$_2$ heterostructures via twist angle

Authors: Thomas Naimer, Martin Gmitra, Jaroslav Fabian

Abstract: We investigate the effect of the twist angle on the proximity spin-orbit coupling (SOC) in graphene/NbSe$_2$ heterostructures from first principles. The low-energy Dirac bands of several different commensurate twisted supercells are fitted to a model Hamiltonian, allowing us to study the twist-angle dependency of the SOC in detail. We predict that the magnitude of the Rashba SOC can triple, when g… ▽ More We investigate the effect of the twist angle on the proximity spin-orbit coupling (SOC) in graphene/NbSe$_2$ heterostructures from first principles. The low-energy Dirac bands of several different commensurate twisted supercells are fitted to a model Hamiltonian, allowing us to study the twist-angle dependency of the SOC in detail. We predict that the magnitude of the Rashba SOC can triple, when going from $Θ=0^\circ$ to $Θ=30^\circ$ twist angle. Furthermore, at a twist angle of $Θ\approx23^\circ$ the in-plane spin texture acquires a large radial component, corresponding to a Rashba angle of up to $Φ=25^\circ$. The twist-angle dependence of the extracted proximity SOC is explained by analyzing the orbital decomposition of the Dirac states to reveal with which NbSe$_2$ bands they hybridize strongest. Finally, we employ a Kubo formula to evaluate the efficiency of conventional and unconventional charge-to-spin conversion in the studied heterostructures. △ Less

Submitted 30 April, 2024; v1 submitted 12 February, 2024; originally announced February 2024.

Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering

Authors: András Pálinkás, Krisztián Márity, Konrád Kandrai, Zoltán Tajkov, Martin Gmitra, Péter Vancsó, Levente Tapasztó, Péter Nemes-Incze

Abstract: Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating… ▽ More Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating a precise method to identify flawless rhombohedral stacking. Overcoming this challenge is difficult because the established technique for stacking sequence identification, based on the Raman 2D peak, fails in thick RG samples. We demonstrate that the strong layer dependence of the band structure can be harnessed to identify RG without stacking faults, or alternatively, to detect their presence. For thicknesses ranging from 3 to 12 layers, we show that each perfect RG structure presents distinctive peak positions in electronic Raman scattering (ERS). This measurement can be carried out using a conventional confocal Raman spectrometer at room temperature, using visible excitation wavelengths. Consequently, this overcomes the identification challenge by providing a simple and fast optical measurement technique, thereby hel** to establish RG as a platform for studying strong correlations in one of the simplest crystals possible. △ Less

Submitted 5 April, 2024; v1 submitted 31 January, 2024; originally announced January 2024.

Comments: 20 pages, 6 figures

Interplay of altermagnetism and weak ferromagnetism in two-dimensional RuF$_4$

Authors: Marko Milivojević, Marko Orozović, Silvia Picozzi, Martin Gmitra, Srdjan Stavrić

Abstract: Gaining growing attention in spintronics is a class of magnets displaying zero net magnetization and spin-split electronic bands called altermagnets. Here, by combining density functional theory and symmetry analysis, we show that RuF$_4$ monolayer is a two-dimensional $d$-wave altermagnet. Spin-orbit coupling leads to pronounced spin splitting of the electronic bands at the $Γ$ point by… ▽ More Gaining growing attention in spintronics is a class of magnets displaying zero net magnetization and spin-split electronic bands called altermagnets. Here, by combining density functional theory and symmetry analysis, we show that RuF$_4$ monolayer is a two-dimensional $d$-wave altermagnet. Spin-orbit coupling leads to pronounced spin splitting of the electronic bands at the $Γ$ point by $\sim 100$ meV and turns the RuF$_4$ into a weak ferromagnet due to non trivial spin-momentum locking that cants the Ru magnetic moments. The net magnetic moment scales linearly with the spin-orbit coupling strength. Using group theory we derive an effective spin Hamiltonian capturing the spin-splitting and spin-momentum locking of the electronic bands. Disentanglement of the altermagnetic and spin-orbit coupling induced spin splitting uncovers to which extent the altermagnetic properties are affected by the spin-orbit coupling. Our results move the spotlight to the non trivial spin-momentum locking and weak ferromagnetism in the two-dimensional altermagnets relevant for novel venues in this emerging field of material science research. △ Less

Submitted 27 January, 2024; originally announced January 2024.

Comments: 22 pages, 4 figures

Journal ref: 2D Materials 11 (2024) 035025

Disorder- and magnetic field-tuned fermionic superconductor-insulator transition in MoN thin films. Transport and STM studies

Authors: M. Kuzmiak, M. Kopik, F. Kosuth, V. Vano, J. Hanis, T. Samuely, V. Latyshev, O. Onufriienko, V. Komanicky, J. Kacmarcik, M. Zemlicka, M. Gmitra, P. Szabo, P. Samuely

Abstract: Superconductor-insulator transition (SIT) driven by disorder and transverse magnetic field has been investigated in ultrathin MoN films by means of transport measurements and scanning tunneling microscopy and spectroscopy. Upon decreasing thickness, the homogeneously disordered films show increasing sheet resistance Rs, shift of the superconducting transition Tc to lower temperatures with the 3 nm… ▽ More Superconductor-insulator transition (SIT) driven by disorder and transverse magnetic field has been investigated in ultrathin MoN films by means of transport measurements and scanning tunneling microscopy and spectroscopy. Upon decreasing thickness, the homogeneously disordered films show increasing sheet resistance Rs, shift of the superconducting transition Tc to lower temperatures with the 3 nm MoN being the last superconducting film and thinner films already insulating. Fermionic scenario of SIT is evidenced by applicability of the Finkelsteins model, by the fact that Tc and the superconducting gap are coupled with a constant ratio, and by the spatial homogeneity of the superconducting and electronic characteristics. The logarithmic anomaly found in the tunneling spectra of the non-superconducting films is further enhanced in increased magnetic field due to the Zeeman spin effects driving the system deeper into the insulating state and pointing also to fermionic SIT. △ Less

Submitted 29 November, 2023; originally announced November 2023.

Comments: Manuscript (6 Figures) including Supplemental Materials (7 Figures)

Journal ref: Physical Review B 108, 184511 (2023)

Proximity-enabled control of spin-orbit coupling in phosphorene symmetrically and asymmetrically encapsulated by WSe$_2$ monolayers

Authors: Marko Milivojević, Martin Gmitra, Marcin Kurpas, Ivan Štich, Jaroslav Fabian

Abstract: We analyze, using first-principles calculations and the method of invariants, the spin-orbit proximity effects in trilayer heterostructures comprising phosphorene and encapsulating WSe$_2$ monolayers. We focus on four different configurations, in which the top/bottom WSe$_2$ monolayer is twisted by 0 or 60 degrees with respect to phosphorene, and analyze the spin splitting of phosphorene hole band… ▽ More We analyze, using first-principles calculations and the method of invariants, the spin-orbit proximity effects in trilayer heterostructures comprising phosphorene and encapsulating WSe$_2$ monolayers. We focus on four different configurations, in which the top/bottom WSe$_2$ monolayer is twisted by 0 or 60 degrees with respect to phosphorene, and analyze the spin splitting of phosphorene hole bands around the $Γ$ point. Our results show that the spin texture of phosphorene hole bands can be dramatically modified by different encapsulations of phosphorene monolayer. For a symmetrically encapsulated phosphorene, the momentum-dependent spin-orbit field has the out-of-plane component only, simulating the spin texture of phosphorene-like group-IV monochalcogenide ferroelectrics. Furthermore, we reveal that the direction of the out-of-plane spin-orbit field can be controlled by switching the twist angle from 0 to 60 degrees. Finally, we show that the spin texture in asymmetrically encapsulated phosphorene has the dominant in-plane component of the spin-orbit field, comparable to the Rashba effect in phosphorene with an applied sizable external electric field. Our results confirm that the significant modification and control of the spin texture is possible in low common-symmetry heterostructures, paving the way for using different substrates to modify spin properties in materials important for spintronics. △ Less

Submitted 28 February, 2024; v1 submitted 21 November, 2023; originally announced November 2023.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 109, 075305 (2024)

Proximity-induced spin-orbit coupling in phosphorene on a WSe$_2$ monolayer

Authors: Marko Milivojević, Martin Gmitra, Marcin Kurpas, Ivan Štich, Jaroslav Fabian

Abstract: We investigate, using first-principles methods and effective-model simulations, the spin-orbit coupling proximity effects in a bilayer heterostructure comprising phosphorene and WSe$_2$ monolayers. We specifically analyze holes in phosphorene around the $Γ$ point, at which we find a significant increase of the spin-orbit coupling that can be attributed to the strong hybridization of phosphorene wi… ▽ More We investigate, using first-principles methods and effective-model simulations, the spin-orbit coupling proximity effects in a bilayer heterostructure comprising phosphorene and WSe$_2$ monolayers. We specifically analyze holes in phosphorene around the $Γ$ point, at which we find a significant increase of the spin-orbit coupling that can be attributed to the strong hybridization of phosphorene with the WSe$_2$ bands. We also propose an effective spin-orbit model based on the ${\bf C}_{1{\rm v}}$ symmetry of the studied heterostructure. The corresponding spin-orbit field can be divided into two parts: the in-plane field, present due to the broken nonsymmorphic horizontal glide mirror plane symmetry, and the dominant out-of-plane field triggered by breaking the out-of-plane rotational symmetry of the phosphorene monolayer. Furthermore, we also demonstrate that a heterostructure with 60$^\circ$ twist angle exhibits an opposite out-of-plane spin-orbit field, indicating that the coupling can effectively be tuned by twisting. The studied phosphorene/WSe$_2$ bilayer is a prototypical low common-symmetry heterostructure in which the proximity effect can be used to engineer the spin texture of the desired material. △ Less

Submitted 25 September, 2023; v1 submitted 17 June, 2023; originally announced June 2023.

Comments: 8 pages, 3 figures

Journal ref: Phys. Rev. B 108, 115311 (2023)

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature

Authors: B. G. Márkus, M. Gmitra, B. Dóra, G. Csősz, T. Fehér, P. Szirmai, B. Náfrádi, V. Zólyomi, L. Forró, J. Fabian, F. Simon

Abstract: Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including… ▽ More Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $\sim 70~μ$m, suggesting that thin films of graphite -- or multilayer AB graphene stacks -- can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations. △ Less

Submitted 22 May, 2023; originally announced May 2023.

Journal ref: Nature Communications volume 14, Article number: 2831 (2023)

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Authors: Tomas Samuely, Darshana Wickramaratne, Martin Gmitra, Thomas Jaouen, Ondrej Šofranko, Dominik Volavka, Marek Kuzmiak, Jozef Haniš, Pavol Szabó, Claude Monney, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Matteo Calandra, Igor I. Mazin, Peter Samuely

Abstract: Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plan… ▽ More Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hop**, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comments: 14 pages, 4 figures, 4 extended data items

Influence of Structural Defects on Charge Density Waves in 1T-TaS2

Authors: I. Lutsyk, K. Szalowski, P. Krukowski, P. Dabrowski, M. Rogala, W. Kozlowski, M. Le Ster, M. Piskorski, D. A. Kowalczyk, W. Rys, R. Dunal, A. Nadolska, K. Toczek, P. Przybysz, E. Lacinska, J. Binder, A. Wysmolek, N. Olszowska, J. J. Kolodziej, M. Gmitra, T. Hattori, Y. Kuwahara, G. Bian, T. -C. Chiang, P. J. Kowalczyk

Abstract: The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectivel… ▽ More The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) map** with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 25 pages + 5 pages in SI, 6 figures + 6 figures in SI

Probing type-II Ising pairing using the spin-mixing parameter

Authors: Paulina Jureczko, Jozef Haniš, Paulo E. Faria Junior, Martin Gmitra, Marcin Kurpas

Abstract: The immunity of Ising superconductors to external magnetic fields originates from a spin locking of the paired electrons to an intrinsic Zeeman-like field. The spin-momentum locking in non-centrosymmetric crystalline materials leads to type-I Ising pairing in which the direction of the intrinsic field can be deduced from the spin expectation values. Conversely, in centrosymmetric crystals the elec… ▽ More The immunity of Ising superconductors to external magnetic fields originates from a spin locking of the paired electrons to an intrinsic Zeeman-like field. The spin-momentum locking in non-centrosymmetric crystalline materials leads to type-I Ising pairing in which the direction of the intrinsic field can be deduced from the spin expectation values. Conversely, in centrosymmetric crystals the electron spins locked to the orbitals can form Ising type-II pairs consisting of spin-orbit split doublets. Due to time-reversal symmetry, the doublets are spin degenerate, making it difficult to read the spin polarization of bands and the direction of spin-orbit fields. Here we present an efficient approach to determine the direction of the intrinsic field using the spin-mixing parameter $b^2$. Using first principles calculations based on the density functional theory, we study monolayer transition metal dichalcogenide superconductors PdTe$_2$, NbTe$_2$, and TiSe$_2$ with the 1T structure. We calculate $b^2$ for individual Fermi pockets and provide a general picture of possible Ising type-II pairing within the full Brillouin zone. In order to complement our first principles results, we use group theory to provide a detailed picture of spin-orbit coupling and spin mixing in the relevant bands forming Fermi pockets. We demonstrate that contrary to the anticipated effects of spin-orbit locking, not every spin-orbit split spin doublet actively participates in Ising pairing. Finally, by connecting the spin-mixing parameter $b^2$ with the intrinsic out-of-plane Zeeman field we estimate the upper in-plane critical magnetic field. △ Less

Submitted 26 March, 2024; v1 submitted 6 February, 2023; originally announced February 2023.

Collective topological spin dynamics in a correlated spin glass

Authors: Juraj Krempaský, Gunther Springholz, Sunil Wilfred D'Souza, Ondřej Caha, Martin Gmitra, Andreas Ney, Carlos Antonio Fernandez Vaz, Cinthia Piamonteze, Mauro Fanciulli, Dominik Kriegner, Jonas A. Krieger, Thomas Prokscha, Zaher Salman, Jan Minár, J. Hugo Dil

Abstract: The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric… ▽ More The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric semiconductor is found to reverse with current pulses six orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Lastly, we present a novel methodology to controllably harness this stochastic magnetization dynamics, allowing us to detect spatiotemporal nucleation of topological spin textures we term ``skyrmiverres''. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Comments: 26 pages, 10 figures, 2 tables

Journal ref: Nature Communications 14, 6127 (2023)

Spin-orbit and exchange proximity couplings in graphene/1T-TaS$_2$ heterostructure triggered by a charge density wave

Authors: Karol Szałowski, Marko Milivojević, Denis Kochan, Martin Gmitra

Abstract: Proximity-induced fine features and spin-textures of the electronic bands in graphene-based van der Waals heterostructures can be explored from the point of tailoring a twist angle. Here we study spin-orbit coupling and exchange coupling engineering of graphene states in the proximity of 1T-TaS$_2$ not triggering the twist, but a charge density wave in 1T-TaS$_2$-a realistic low-temperature phase.… ▽ More Proximity-induced fine features and spin-textures of the electronic bands in graphene-based van der Waals heterostructures can be explored from the point of tailoring a twist angle. Here we study spin-orbit coupling and exchange coupling engineering of graphene states in the proximity of 1T-TaS$_2$ not triggering the twist, but a charge density wave in 1T-TaS$_2$-a realistic low-temperature phase. Using density functional theory and effective model we found that the emergence of the charge density wave in 1T-TaS$_2$ significantly enhances Rashba spin-orbit splitting in graphene and tilts the spin texture by a significant Rashba angle-in a very similar way as in the conventional twist-angle scenarios. Moreover, the partially filled Ta $d$-band in the charge density wave phase leads to the spontaneous emergence of the in-plane magnetic order that transgresses via proximity from 1T-TaS$_2$ to graphene, hence, simultaneously superimposing along the spin-orbit also the exchange coupling proximity effect. To describe this intricate proximity landscape we have developed an effective model Hamiltonian and provided a minimal set of parameters that excellently reproduces all the spectral features predicted by the first-principles calculations. Conceptually, the charge density wave provides a highly interesting knob to control the fine features of electronic states and to tailor the superimposed proximity effects-a sort of twistronics without twist. △ Less

Submitted 27 January, 2023; v1 submitted 3 November, 2022; originally announced November 2022.

Journal ref: 2D Materials 10 (2023) 025013

Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures

Authors: Klaus Zollner, Martin Gmitra, Jaroslav Fabian

Abstract: We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$. Employing first-principles calculations we obtain the electronic structures of the multilayer stacks and extract the relevant proximity-induced orbital and spin inter… ▽ More We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$. Employing first-principles calculations we obtain the electronic structures of the multilayer stacks and extract the relevant proximity-induced orbital and spin interaction parameters by fitting the low-energy bands to model Hamiltonians. We also demonstrate the tunability of the proximity effects by a transverse electric field. Using the model Hamiltonians we also study mixed spin-orbit/exchange coupling encapsulation, which allows to tailor the spin interactions very efficiently by the applied field. We also summarize the spin-orbit physics of bare ABA, ABC, and ABB trilayers, and provide, along with the first-principles results of the electronic band structures, density of states, spin splittings, and electric-field tunabilities of the bands, qualitative understanding of the observed behavior and realistic model parameters as a resource for model simulations of transport and correlation physics in trilayer graphene. △ Less

Submitted 24 February, 2022; originally announced February 2022.

Comments: 27 pages, 22 figures, 5 tables

Journal ref: Phys. Rev. B 105, 115126 (2022)

Twist-angle dependent proximity induced spin-orbit coupling in graphene/transition-metal dichalcogenide heterostructures

Authors: Thomas Naimer, Klaus Zollner, Martin Gmitra, Jaroslav Fabian

Abstract: We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and monolayers of transition-metal dichalcogenides (TMDCs) MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ from first principles. We identify strain, which is necessary to define commensurate supercells, as the key factor affecting the band offsets and thus magnitudes of the proximity couplings. We establish th… ▽ More We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and monolayers of transition-metal dichalcogenides (TMDCs) MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ from first principles. We identify strain, which is necessary to define commensurate supercells, as the key factor affecting the band offsets and thus magnitudes of the proximity couplings. We establish that for biaxially strained graphene the band offsets between the Dirac point and conduction (valence) TMDC bands vary linearly with strain, regardless of the twist angle. This relation allows to identify the apparent zero-strain band offsets and find a compensating transverse electric field correcting for the strain. The resulting corrected band structure is then fitted around the Dirac point to an established spin-orbit Hamiltonian. This procedure yields the dominant, valley-Zeeman and Rashba spin-orbit couplings. The magnitudes of these couplings do not vary much with the twist angle, although the valley-Zeeman coupling vanishes for 30$^{\circ}$ and Mo-based heterostructures exhibit a maximum of the coupling at around 20$^{\circ}$. The maximum for W-based stacks is at 0$^{\circ}$. The Rashba coupling is in general weaker than the valley-Zeeman coupling, except at angles close to 30$^{\circ}$. We also identify the Rashba phase angle which measures the deviation of the in-plane spin texture from tangential, and find that this angle is very sensitive to the applied transverse electric field. We further discuss the reliability of the supercell approach with respect to atomic relaxation (rippling of graphene), relative lateral shifts of the atomic layers, and transverse electric field. △ Less

Submitted 2 June, 2023; v1 submitted 13 August, 2021; originally announced August 2021.

Comments: 14 pages, 9 figures, 7 tables

Boosting proximity spin orbit coupling in graphene/WSe$_2$ heterostructures via hydrostatic pressure

Authors: Bálint Fülöp, Albin Márffy, Simon Zihlmann, Martin Gmitra, Endre Tóvári, Bálint Szentpéteri, Máté Kedves, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Christian Schönenberger, Péter Makk, Szabolcs Csonka

Abstract: Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changi… ▽ More Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Journal ref: npj 2D Mater Appl 5, 82 (2021)

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Authors: Kai-Qiang Lin, Paulo E. Faria Junior, Jonas M. Bauer, Bo Peng, Bartomeu Monserrat, Martin Gmitra, Jaroslav Fabian, Sebastian Bange, John M. Lupton

Abstract: Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 c… ▽ More Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 can be tuned over 235 meV by twisting, with a twist-angle susceptibility of 8.1 meV/°, an order of magnitude larger than that of the band-edge A-exciton. This tunability arises because the electronic states associated with upper conduction bands delocalize into the chalcogenide atoms. The effect gives control over excitonic quantum interference, revealed in selective activation and deactivation of electromagnetically induced transparency (EIT) in second-harmonic generation. Such a degree of freedom does not exist in conventional dilute atomic-gas systems, where EIT was originally established, and allows us to shape the frequency dependence, i.e. the dispersion, of the optical nonlinearity. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Journal ref: Nature Communications 12, 1553 (2021)

Triple point fermions in ferroelectric GeTe

Authors: Juraj Krempaský, Laurent Nicolaï, Martin Gmitra, Houke Chen, Mauro Fanciulli, Eduardo B. Guedes, Marco Caputo, Milan Radović, V. V. Volobuev, Ondrej Caha, Gunther Springholz, Jan Minár, J. Hugo Dil

Abstract: Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory,… ▽ More Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone. The rich manifold of effects opens up promising perspectives for studying non-trivial phenomena and multi-component fermions in condensed matter systems. △ Less

Submitted 3 December, 2020; originally announced December 2020.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 126, 206403 (2021)

Swap** Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures

Authors: Klaus Zollner, Martin Gmitra, Jaroslav Fabian

Abstract: The concept of swap** the two most important spin interactions -- exchange and spin-orbit coupling -- is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio simulations, that a single device consisting of a bilayer graphene sandwiched by a 2D ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) and a monolayer WS$_2$, is able not o… ▽ More The concept of swap** the two most important spin interactions -- exchange and spin-orbit coupling -- is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio simulations, that a single device consisting of a bilayer graphene sandwiched by a 2D ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) and a monolayer WS$_2$, is able not only to generate, but also to swap the two interactions. The highly efficient swap** is enabled by the interplay of gate-dependent layer polarization in bilayer graphene and short-range spin-orbit and exchange proximity effects affecting only the layers in contact with the sandwiching materials. We call these structures ex-so-tic, for supplying either exchange (ex) or spin-orbit (so) coupling in a single device, by gating. Such bifunctional devices demonstrate the potential of van der Waals spintronics engineering using 2D crystal multilayers. △ Less

Submitted 4 November, 2020; v1 submitted 22 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures, 1 table + Supplemental Material

Journal ref: Phys. Rev. Lett. 125, 196402 (2020)

Chiral Majorana fermions in graphene from proximity-induced superconductivity

Authors: Petra Högl, Tobias Frank, Denis Kochan, Martin Gmitra, Jaroslav Fabian

Abstract: We present a detailed theoretical study of chiral topological superconductor phases in proximity-superconducting graphene systems based on an effective model inspired by DFT simulations. Inducing s-wave superconductivity to quantum anomalous Hall effect systems leads to chiral topological superconductors. For out-of-plane magnetization we find topological superconducting phases with even numbers o… ▽ More We present a detailed theoretical study of chiral topological superconductor phases in proximity-superconducting graphene systems based on an effective model inspired by DFT simulations. Inducing s-wave superconductivity to quantum anomalous Hall effect systems leads to chiral topological superconductors. For out-of-plane magnetization we find topological superconducting phases with even numbers of chiral Majorana fermions per edge which is correlated to the opening of a nontrivial gap in the bulk system in the $\mathrm{ K}$-points and their connection under particle-hole symmetry. We show that in a quantum anomalous Hall insulator with in-plane magnetization and nontrivial gap opening at $\mathrm{M}$, the corresponding topological superconductor can be tuned to host only single chiral Majorana states at its edge which is promising for proposals exploiting such states for braiding operations. △ Less

Submitted 9 September, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 101, 245441 (2020)

Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling

Authors: Petra Högl, Tobias Frank, Klaus Zollner, Denis Kochan, Martin Gmitra, Jaroslav Fabian

Abstract: We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number $C=1$.… ▽ More We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number $C=1$. We explicitly show edge states in zigzag and armchair nanoribbons and explore their localization behavior. Remarkably, the combination of staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected (unlike in time-reversal systems) pseudohelical states, whose spin is opposite in opposite zigzag edges. Rotating the magnetization from out of plane to in plane makes the system trivial, allowing to control topological phase transitions. We also propose, using density functional theory, a material platform---graphene on Ising antiferromagnet MnPSe$_3$---to realize staggered exchange (pseudospin Zeeman) coupling. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Lett. 124, 136403 (2020)

Spin-orbit coupling in elemental two-dimensional materials

Authors: Marcin Kurpas, Paulo E. Faria Junior, Martin Gmitra, Jaroslav Fabian

Abstract: The fundamental spin-orbit coupling and spin mixing in graphene and rippled honeycomb lattice materials silicene, germanene, stanene, blue phosphorene, arsenene, antimonene, and bismuthene is investigated from first principles. The intrinsic spin-orbit coupling in graphene is revisited using multi-band $k\cdot p$ theory, showing the presence of non-zero spin mixing in graphene despite the mirror s… ▽ More The fundamental spin-orbit coupling and spin mixing in graphene and rippled honeycomb lattice materials silicene, germanene, stanene, blue phosphorene, arsenene, antimonene, and bismuthene is investigated from first principles. The intrinsic spin-orbit coupling in graphene is revisited using multi-band $k\cdot p$ theory, showing the presence of non-zero spin mixing in graphene despite the mirror symmetry. However, the spin mixing itself does not lead to the the Elliott-Yafet spin relaxation mechanism, unless the mirror symmetry is broken by external factors. For other aforementioned elemental materials we present the spin-orbit splittings at relevant symmetry points, as well as the spin admixture $b^2$ as a function of energy close to the band extrema or Fermi levels. We find that spin-orbit coupling scales as the square of the atomic number Z, as expected for valence electrons in atoms. For isolated bands, it is found that $b^2\sim Z^4$. The spin-mixing parameter also exhibits giant anisotropy which, to a large extent, can be controlled by tuning the Fermi level. Our results for $b^2$ can be directly transferred to spin relaxation time due to the Elliott-Yafet mechanism, and therefore provide an estimate of the upper limit for spin lifetimes in materials with space inversion center. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 100, 125422 (2019)

$k \cdot p$ theory for phosphorene: Effective g-factors, Landau levels, and excitons

Authors: Paulo E. Faria Junior, Marcin Kurpas, Martin Gmitra, Jaroslav Fabian

Abstract: Phosphorene, a single layer of black phosphorus, is a direct-band gap two-dimensional semiconductor with promising charge and spin transport properties. The electronic band structure of phosphorene is strongly affected by the structural anisotropy of the underlying crystal lattice. We describe the relevant conduction and valence bands close to the $Γ$ point by four- and six-band (with spin)… ▽ More Phosphorene, a single layer of black phosphorus, is a direct-band gap two-dimensional semiconductor with promising charge and spin transport properties. The electronic band structure of phosphorene is strongly affected by the structural anisotropy of the underlying crystal lattice. We describe the relevant conduction and valence bands close to the $Γ$ point by four- and six-band (with spin) $k \cdot p$ models, including the previously overlooked interband spin-orbit coupling which is essential for studying anisotropic crystals. All the $k \cdot p$ parameters are obtained by a robust fit to {\it ab initio} data, by taking into account the nominal band structure and the $k$-dependence of the effective mass close to $Γ$-point. The inclusion of interband spin-orbit coupling allows us to determine dipole transitions along both armchair and zigzag directions. The interband coupling is also key to determine the effective g-factors and Zeeman splittings of the Landau levels. We predict the electron and hole g-factor correction of $\approx 0.03$ due to the intrinsic contributions in phosphorene, which lies within the existing range of experimental data. Furthermore, we investigate excitonic effects using the $k \cdot p$ models and find exciton binding energy (0.81 eV) and exciton diameters consistent with experiments and {\it ab initio} based calculations. The proposed $k \cdot p$ Hamiltonians should be useful for investigating magnetic, spin, transport, optical properties and many-body effects in phosphorene. △ Less

Submitted 19 September, 2019; v1 submitted 23 April, 2019; originally announced April 2019.

Comments: 6 figures, 2 tables

Journal ref: Phys. Rev. B 100, 115203 (2019)

Spin relaxation in fluorinated single and bilayer graphene

Authors: Susanne Wellnhofer, Adam Stabile, Denis Kochan, Martin Gmitra, Ya-Wen Chuang, Jun Zhu, Jaroslav Fabian

Abstract: We present a joint experiment-theory study on the role of fluorine adatoms in spin and momentum scattering of charge carriers in dilute fluorinated graphene and bilayer graphene. The experimental spin-flip and momentum scattering rates and their dependence on the density of fluorine and carrier do** are obtained through weak localization and conductivity measurements, respectively, and suggest t… ▽ More We present a joint experiment-theory study on the role of fluorine adatoms in spin and momentum scattering of charge carriers in dilute fluorinated graphene and bilayer graphene. The experimental spin-flip and momentum scattering rates and their dependence on the density of fluorine and carrier do** are obtained through weak localization and conductivity measurements, respectively, and suggest the role of fluorine as resonant magnetic impurities. For the estimated fluorine concentration of a few 100 ppm, the observed spin lifetimes are in the range of 1-10\,ps. Theoretically, we established tight-binding electronic structures of fluorinated graphene and bilayer graphene by fitting to density functional supercell calculations and performed a comprehensive analysis of the spin-flip and momentum scattering rates within the same devices, aiming to develop a consistent description of both scattering channels. We find that resonant scattering in graphene is very sensitive to the precise position of the resonance level, as well as to the magnitude of the exchange coupling between itinerant carriers and localized spins. The experimental data point to the presence of weak spin-flip scatterers that, at the same time, relax the electron momentum strongly, nearly preserving the electron-hole symmetry. Such scatterers would exhibit resonance energies much closer to the neutrality point than what density functional theory predicts in the dilute limit. The inclusion of a magnetic moment on fluorine adatoms allowed us to qualitatively capture the carrier density dependence of the experimental rates but predicts a greater (weaker) spin (momentum) relaxation rate than the measurements. We discuss possible scenarios that may be responsible for the discrepancies. Our systematic study exposes the complexities involved in accurately capturing the behavior of adatoms on graphene. △ Less

Submitted 21 March, 2019; originally announced March 2019.

Comments: 11 pages, 13 figures

Journal ref: Phys. Rev. B 100, 035421 (2019)

Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects

Authors: Marcin Kurpas, Martin Gmitra, Jaroslav Fabian

Abstract: First-principles calculations of the essential spin-orbit and spin relaxation properties of phosphorene are performed. Intrinsic spin-orbit coupling induces spin mixing with the probability of $b^2 \approx 10^{-4}$, exhibiting a large anisotropy, following the anisotropic crystalline structure of phosphorene. For realistic values of the momentum relaxation times, the intrinsic (Elliott--Yafet) spi… ▽ More First-principles calculations of the essential spin-orbit and spin relaxation properties of phosphorene are performed. Intrinsic spin-orbit coupling induces spin mixing with the probability of $b^2 \approx 10^{-4}$, exhibiting a large anisotropy, following the anisotropic crystalline structure of phosphorene. For realistic values of the momentum relaxation times, the intrinsic (Elliott--Yafet) spin relaxation times are hundreds of picoseconds to nanoseconds. Applying a transverse electric field (simulating gating and substrates) generates extrinsic $C_{2v}$ symmetric spin-orbit fields in phosphorene, which activate the D'yakonov--Perel' mechanism for spin relaxation. It is shown that this extrinsic spin relaxation also has a strong anisotropy, and can dominate over the Elliott-Yafet one for strong enough electric fields. Phosphorene on substrates can thus exhibit an interesting interplay of both spin relaxation mechanisms, whose individual roles could be deciphered using our results. △ Less

Submitted 21 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 94, 155423 (2016)

Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles

Authors: Klaus Zollner, Martin Gmitra, Jaroslav Fabian

Abstract: We perform extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived minimal tight-binding model, we extract orbital and spin-orbit coupling (SOC) parameters for graphene on hBN, as well as for hBN encapsulated graphene. Our calculations show that the parameters depend on the specific stacking configu… ▽ More We perform extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived minimal tight-binding model, we extract orbital and spin-orbit coupling (SOC) parameters for graphene on hBN, as well as for hBN encapsulated graphene. Our calculations show that the parameters depend on the specific stacking configuration of graphene on hBN. We also perform an interlayer distance study for the different graphene/hBN stacks to find the corresponding lowest energy distances. For very large interlayer distances, one can recover the pristine graphene properties, as we find from the dependence of the parameters on the interlayer distance. Furthermore, we find that orbital and SOC parameters, especially the Rashba one, depend strongly on an applied transverse electric field, giving a rich playground for spin physics. Armed with the model parameters, we employ the Dyakonov-Perel formalism to calculate the spin relaxation in graphene/hBN heterostructures. We find spin lifetimes in the nanosecond range, in agreement with recent measurements. The spin relaxation anisotropy, being the ratio of out-of-plane to in-plane spin lifetimes, is found to be giant close to the charge neutrality point, decreasing with increasing do**, and being highly tunable by an external transverse electric field. This is in contrast to bilayer graphene in which an external field saturates the spin relaxation anisotropy. △ Less

Submitted 28 March, 2019; v1 submitted 3 December, 2018; originally announced December 2018.

Comments: 17 pages, 22 figures, 3 tables

Journal ref: Phys. Rev. B 99, 125151 (2019)

A topological material in the III-V family: heteroepitaxial InBi on InAs

Authors: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Uros Djukic, Olivier Heckmann, Jean-Michel Mariot, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini

Abstract: InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic… ▽ More InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hop** terms, and no Bi-In interaction, gives a deeper insight into the spin texture. △ Less

Submitted 20 March, 2024; v1 submitted 8 June, 2018; originally announced June 2018.

Comments: 5 figures, 11 pages (+ Sup.)

Electric-field modification of interfacial spin-orbit field-vector

Authors: L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, C. H. Back

Abstract: Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly d… ▽ More Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnet's magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly desirable to control iSOFs by the field-effect, where power consumption is determined by charging/discharging a capacitor5,6. In particular, efficient electric-field control of iSOFs acting on ferromagnetic metals is of vital importance for practical applications. It is known that in single crystalline Fe/GaAs (001) heterostructures with C2v symmetry, interfacial SOFs emerge at the Fe/GaAs (001) interface due to the lack of inversion symmetry7,8. Here, we show that by applying a gate-voltage across the Fe/GaAs interface, interfacial SOFs acting on Fe can be robustly modulated via the change of the magnitude of the interfacial spin-orbit interaction. Our results show that, for the first time, the electric-field in a Schottky barrier is capable of modifying SOFs, which can be exploited for the development of low-power-consumption spin-orbit torque devices. △ Less

Submitted 26 April, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 5 figures

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband $\vec{k} \cdot \vec{p}$ method

Authors: Tiago Campos, Paulo E. Faria Junior, Martin Gmitra, Guilherme M. Sipahi, Jaroslav Fabian

Abstract: A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [10$\overline{1}$0] or [11$\overline{2}$0] directions. Realistic multiband $\vec{k} \cdot \vec{p}\,$ Hamiltonians are solved by… ▽ More A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [10$\overline{1}$0] or [11$\overline{2}$0] directions. Realistic multiband $\vec{k} \cdot \vec{p}\,$ Hamiltonians are solved by using plane-wave expansions of real-space parameters. In all cases the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies are on the $μ$eV scale, except for InAs wurtzite nanowires grown along [10$\overline{1}$0] or [11$\overline{2}$0], in which the spin-orbit energy is about meV, largely independent of the wire diameter. Significant spin-orbit coupling is obtained by applying a transverse electric field, causing the Rashba effect. For an electric field of about 4 mV/nm the obtained spin-orbit energies are about 1 meV for both materials in all investigated growth directions. The most favorable system, in which the spin-orbit effects are maximal, are InAs WZ nanowires grown along [1010] or [11$\overline{2}$0], since here spin-orbit energies are giant (meV) already in the absence of electric field. The least favorable are InAs WZ nanowires grown along [0001], since here even the electric field does not increase the spin-orbit energies beyond 0.1 meV. The presented results should be useful for investigations of optical orientation, spin transport, weak localization, and superconducting proximity effects in semiconductor nanowires. △ Less

Submitted 30 April, 2018; v1 submitted 19 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. B 97, 245402 (2018)

Electrically tunable exchange splitting in bilayer graphene on monolayer Cr$_2$X$_2$Te$_6$ with X=Ge, Si, and Sn

Authors: Klaus Zollner, Martin Gmitra, Jaroslav Fabian

Abstract: We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band dependent. For e… ▽ More We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band dependent. For example, in the case of Cr$_2$Ge$_2$Te$_6$, the low-energy valence band of bilayer graphene has exchange splitting of 8 meV, while the low energy conduction band's splitting is 30 times less (0.3 meV). This striking discrepancy stems from the layer-dependent hybridization with the ferromagnetic substrate. Remarkably, applying a vertical electric field of a few V/nm reverses the exchange, allowing us to effectively turn ON and OFF proximity magnetism in bilayer graphene. Such a field-effect should be generic for van der Waals bilayers on ferromagnetic insulators, opening new possibilities for spin-based devices. △ Less

Submitted 9 July, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 14 pages, 7 figurs, 1 table

Journal ref: New J. Phys. 20 073007 (2018)

Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors

Authors: J. Krempaský, S. Muff, J. Minár, N. Pilet, M. Fanciulli, A. P. Weber, V. V. Volobuiev, M. Gmitra, C. A. F. Vaz, V. Scagnoli, G. Springholz, J. H. Dil

Abstract: The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconducto… ▽ More The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system. △ Less

Submitted 26 July, 2017; originally announced July 2017.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. X 8, 021067 (2018)

Protected pseudohelical edge states in proximity graphene ribbons and flakes

Authors: Tobias Frank, Petra Högl, Martin Gmitra, Denis Kochan, Jaroslav Fabian

Abstract: We investigate topological properties of models that describe graphene on realistic substrates which induce proximity spin-orbit coupling in graphene. A $\mathbb{Z}_2$ phase diagram is calculated for the parameter space of (generally different) intrinsic spin-orbit coupling on the two graphene sublattices, in the presence of Rashba coupling. The most fascinating case is that of staggered intrinsic… ▽ More We investigate topological properties of models that describe graphene on realistic substrates which induce proximity spin-orbit coupling in graphene. A $\mathbb{Z}_2$ phase diagram is calculated for the parameter space of (generally different) intrinsic spin-orbit coupling on the two graphene sublattices, in the presence of Rashba coupling. The most fascinating case is that of staggered intrinsic spin-orbit coupling which, despite being topologically trivial, $\mathbb{Z}_2 = 0$, does exhibit edge states protected against time-reversal scattering for zigzag ribbons as wide as micrometers. We call these states pseudohelical as their helicity is locked to the sublattice. The spin character and robustness of the pseudohelical modes is best exhibited on a finite flake, which shows that the edge states have zero $g$-factor, carry a finite spin current in the crossection of the flake, and exhibit spin-flip reflectionless tunneling at the armchair edges. △ Less

Submitted 7 July, 2017; originally announced July 2017.

Comments: 10 pages, 9 figures, 1 video

Journal ref: Phys. Rev. Lett. 120, 156402 (2018)

Proximity effects in bilayer graphene on monolayer WSe$_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor

Authors: Martin Gmitra, Jaroslav Fabian

Abstract: Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is two orders of magnitude---the spin-orbit splitting of the valence band at K is about 2 meV---more than for elect… ▽ More Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is two orders of magnitude---the spin-orbit splitting of the valence band at K is about 2 meV---more than for electrons. Effectively, holes experience spin-valley locking due to the strong proximity of the lower graphene layer to WSe$_2$. However, applying an external transverse electric field of some 1 V/nm, countering the built-in field of the heterostructure, completely reverses this effect and allows, instead for holes, electrons to be spin-valley locked with 2 meV spin-orbit splitting. Such a behavior constitutes a highly efficient field-effect spin-orbit valve, making bilayer graphene on WSe$_2$ a potential platform for a field-effect spin transistor. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. Lett. 119, 146401 (2017)

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Authors: Ahmet Avsar, Jun You Tan, Marcin Kurpas, Martin Gmitra, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Barbaros Ozyilmaz

Abstract: Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D… ▽ More Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Excitonic valley effects in monolayer WS$_2$ under high magnetic fields

Authors: Gerd Plechinger, Philipp Nagler, Ashish Arora, Andrés Granados del Águila, Mariana V. Ballottin, Tobias Frank, Philipp Steinleitner, Martin Gmitra, Jaroslav Fabian, Peter C. M. Christianen, Rudolf Bratschitsch, Christian Schüller, Tobias Korn

Abstract: Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The… ▽ More Transition-metal dichalcogenides can be easily produced as atomically thin sheets, exhibiting the possibility to optically polarize and read out the valley pseudospin of extremely stable excitonic quasiparticles present in these 2D semiconductors. Here, we investigate a monolayer of tungsten disulphide in high magnetic fields up to 30\,T via photoluminescence spectroscopy at low temperatures. The valley degeneracy is lifted for all optical features, particularly for excitons, singlet and triplet trions, for which we determine the g factor separately. While the observation of a diamagnetic shift of the exciton and trion resonances gives us insight into the real-space extension of these quasiparticles, magnetic field induced valley polarization effects shed light onto the exciton and trion dispersion relations in reciprocal space. The field dependence of the trion valley polarizations is in line with the predicted trion splitting into singlet and triplet configurations. △ Less

Submitted 9 December, 2016; originally announced December 2016.

Copper adatoms on graphene: theory of orbital and spin-orbital effects

Authors: Tobias Frank, Susanne Irmer, Martin Gmitra, Denis Kochan, Jaroslav Fabian

Abstract: We present a combined DFT and model Hamiltonian analysis of spin-orbit coupling in graphene induced by copper adatoms in the bridge and top positions, representing isolated atoms in the dilute limit. The orbital physics in both systems is found to be surprisingly similar, given the fundamental difference in the local symmetry. In both systems the Cu p and d contributions at the Fermi level are ver… ▽ More We present a combined DFT and model Hamiltonian analysis of spin-orbit coupling in graphene induced by copper adatoms in the bridge and top positions, representing isolated atoms in the dilute limit. The orbital physics in both systems is found to be surprisingly similar, given the fundamental difference in the local symmetry. In both systems the Cu p and d contributions at the Fermi level are very similar. Based on the knowledge of orbital effects we identify that the main cause of the locally induced spin-orbit couplings are Cu p and d orbitals. By employing the DFT+U formalism as an analysis tool we find that both the p and d orbital contributions are equally important to spin-orbit coupling, although p contributions to the density of states are much higher. We fit the DFT data with phenomenological tight-binding models developed separately for the top and bridge positions. Our model Hamiltonians describe the low-energy electronic band structure in the whole Brillouin zone and allow us to extract the size of the spin-orbit interaction induced by the local Cu adatom to be in the tens of meV. By application of the phenomenological models to Green's function techniques, we find that copper atoms act as resonant impurities in graphene with large lifetimes of 50 and 100~fs for top and bridge, respectively. △ Less

Submitted 6 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 035402 (2017)

Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)

Authors: Klaus Zollner, Martin Gmitra, Tobias Frank, Jaroslav Fabian

Abstract: We perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin splitting of the graphene bands is of the order of 10 meV for a monolayer of hBN, decreasing in magnitude but alternating in sign by adding each new insulating layer… ▽ More We perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin splitting of the graphene bands is of the order of 10 meV for a monolayer of hBN, decreasing in magnitude but alternating in sign by adding each new insulating layer. We find that the proximity exchange can be giant if there is a resonant $d$ level of the transition metal close to the Dirac point. Our calculations suggest that this effect could be present in Co heterostructures, in which a $d$ level strongly hybridizes with the valence-band orbitals of graphene. Since this hybridization is spin dependent, the proximity spin splitting is unusually large, about 10 meV even for two layers of hBN. An external electric field can change the offset of the graphene and transition-metal orbitals and can lead to a reversal of the sign of the exchange parameter. This we predict to happen for the case of two monolayers of hBN, enabling electrical control of proximity spin polarization (but also spin injection) in graphene/hBN/Co structures. Nickel-based heterostructures show weaker proximity effects than cobalt heterostructures. We introduce two phenomenological models to describe the first-principles data. The minimal model comprises the graphene (effective) $p_z$ orbitals and can be used to study transport in graphene with proximity exchange, while the $p_z$-$d$ model also includes hybridization with $d$ orbitals, which is important to capture the giant proximity exchange. Crucial to both models is the pseudospin-dependent exchange coupling, needed to describe the different spin splittings of the valence and conduction bands. △ Less

Submitted 25 October, 2016; v1 submitted 27 July, 2016; originally announced July 2016.

Comments: 14 pages, 17 figures, 2 tables

Journal ref: Phys. Rev. B 94, 155441 (2016)

Excitonic Stark effect in MoS$_2$ monolayers

Authors: Benedikt Scharf, Tobias Frank, Martin Gmitra, Jaroslav Fabian, Igor Žutić, Vasili Perebeinos

Abstract: We theoretically investigate excitons in MoS$_2$ monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/$μ$m, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton fi… ▽ More We theoretically investigate excitons in MoS$_2$ monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/$μ$m, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton field ionization into free carriers as reflected in the exciton wave functions. Subpicosecond exciton decay lifetimes at fields of a few tens of V/$μ$m could be utilized in solar energy harvesting and photodetection. We find simple scaling relations of the exciton binding, radius, and oscillator strength with the dielectric environment and an electric field, which provides a path to engineering the MoS$_2$ electro-optical response. △ Less

Submitted 27 December, 2016; v1 submitted 13 June, 2016; originally announced June 2016.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 94, 245434 (2016)

Enhanced spin-orbit coupling in core/shell nanowires

Authors: Stephan Furthmeier, Florian Dirnberger, Martin Gmitra, Andreas Bayer, Moritz Forsch, Joachim Hubmann, Christian Schüller, Elisabeth Reiger, Jaroslav Fabian, Tobias Korn, Dominique Bougeard

Abstract: The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demo… ▽ More The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behavior is counterintuitive compared to bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures. △ Less

Submitted 3 June, 2016; originally announced June 2016.

Journal ref: Nat. Commun. 7, 12413 (2016)

First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

Authors: Martin Gmitra, Jaroslav Fabian

Abstract: We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at zone center, by fitting the spin-split… ▽ More We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at zone center, by fitting the spin-splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms---third-order polynomials. We also determine the orientations of the spin-orbit vector fields (for conduction bands) and the average spins (valence bands) in the momentum space. We describe the dependence of the spin-orbit parameters on the cation and anion atomic weights. These results should be useful for spin transport, spin relaxation, and spin optical orientation modeling of semiconductor heterostructures, as well as for realistic studies of semiconductor-based Majorana nanowires, for which accurate values of spin-orbit couplings are needed. △ Less

Submitted 2 June, 2016; originally announced June 2016.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 94, 165202 (2016)

Realistic multiband k.p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

Authors: Paulo E. Faria Junior, Tiago Campos, Carlos M. O. Bastos, Martin Gmitra, Jaroslav Fabian, Guilherme M. Sipahi

Abstract: Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for inst… ▽ More Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in wurtzite phase and develop an 8$\times$8 k.p Hamiltonian to describe the energy bands around $Γ$ point. We show that our k.p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals, is obtained with the $k$-dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to $Γ$ point. The same fitting procedure is applied to the 6$\times$6 valence band Hamiltonian. However, we find that the most reliable approach is the 8$\times$8 k.p Hamiltonian for both compounds. The k.p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs- and InP-based nanostructures. △ Less

Submitted 10 June, 2016; v1 submitted 20 April, 2016; originally announced April 2016.

Comments: 20 pages, 17 figures, 6 tables. Supplemental material included

Journal ref: Phys. Rev. B9 93, 235204 (2016)

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

Authors: Tobias Frank, Martin Gmitra, Jaroslav Fabian

Abstract: We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene $π$ and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain pr… ▽ More We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene $π$ and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain proximity orbital and spin-orbit coupling parameters, by fitting the DFT results to a robust low energy model Hamiltonian. We find a strong distance dependence of the Rashba and intrinsic proximity induced spin-orbit coupling parameters, which are in the meV and hundreds of $μ$eV range, respectively, for experimentally relevant distances. The Dirac spectrum of graphene also exhibits a proximity orbital gap, of about 20 meV. Furthermore, we find a band inversion within the graphene states accompanied by a reordering of spin and pseudospin states, when graphene is pressed towards copper. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 155142 (2016)

Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides

Authors: Martin Gmitra, Denis Kochan, Petra Högl, Jaroslav Fabian

Abstract: Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs for sulfides and selenides, while it merges with the valence band for tellurides. In the former case the proximity-induced staggered potential gaps and spin-or… ▽ More Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs for sulfides and selenides, while it merges with the valence band for tellurides. In the former case the proximity-induced staggered potential gaps and spin-orbit couplings (all on the meV scale) of the Dirac electrons are established by fitting to a phenomenological effective Hamiltonian. While graphene on MoS$_2$, MoSe$_2$, and WS$_2$ has a topologically trivial band structure, graphene on WSe$_2$ exhibits inverted bands. Using a realistic tight-binding model we find topologically protected helical edge states for graphene zigzag nanoribbons on WSe$_2$, demonstrating the quantum spin Hall effect. This model also features "half-topological states", which are protected against time-reversal disorder on one edge only. △ Less

Submitted 1 October, 2015; originally announced October 2015.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 93, 155104 (2016)

Spin-orbit coupling in methyl functionalized graphene

Authors: Klaus Zollner, Tobias Frank, Susanne Irmer, Martin Gmitra, Denis Kochan, Jaroslav Fabian

Abstract: We present first-principles calculations of the electronic band structure and spin-orbit effects in graphene functionalized with methyl molecules in dense and dilute limits. The dense limit is represented by a 2$\times$2 graphene supercell functionalized with one methyl admolecule. The calculated spin-orbit splittings are up to $0.6$ meV. The dilute limit is deduced by investigating a large, 7… ▽ More We present first-principles calculations of the electronic band structure and spin-orbit effects in graphene functionalized with methyl molecules in dense and dilute limits. The dense limit is represented by a 2$\times$2 graphene supercell functionalized with one methyl admolecule. The calculated spin-orbit splittings are up to $0.6$ meV. The dilute limit is deduced by investigating a large, 7$\times$7, supercell with one methyl admolecule. The electronic band structure of this supercell is fitted to a symmetry-derived effective Hamiltonian, allowing us to extract specific hop** parameters including intrinsic, Rashba, and PIA (pseudospin inversion asymmetry) spin-orbit terms. These proximity-induced spin-orbit parameters have magnitudes of about 1 meV, giant compared to pristine graphene whose intrinsic spin-orbit coupling is about 10 $μ$eV. We find that the origin of this giant local enhancement is the $sp^3$ corrugation and the breaking of local pseudospin inversion symmetry, as in the case of hydrogen adatoms. Also similar to hydrogen, methyl acts as a resonant scatterer, with a narrow resonance peak near the charge neutrality point. We also calculate STM-like images showing the local charge densities at different energies around methyl on graphene. △ Less

Submitted 26 January, 2016; v1 submitted 10 July, 2015; originally announced July 2015.

Comments: 9 pages, 10 figures

Journal ref: Phys. Rev. B 93, 045423 (2016)

Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics

Authors: Martin Gmitra, Jaroslav Fabian

Abstract: Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS$_2$, there are several advantages of such hybrids over pristine graphene. First, Dirac electrons in graphene exhibit a giant global proximity spin-orbit coupling,… ▽ More Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS$_2$, there are several advantages of such hybrids over pristine graphene. First, Dirac electrons in graphene exhibit a giant global proximity spin-orbit coupling, without compromising the semimetallic character of the whole system at zero field. Remarkably, these spin-orbit effects can be very accurately described by a simple effective Hamiltonian. Second, the Fermi level can be tuned by a transverse electric field to cross the MoS$_2$ conduction band, creating a system of coupled massive and massles electron gases. Both charge and spin transport in such systems should be unique. Finally, we propose to use graphene/TMDC structures as a platform for optospintronics, in particular for optical spin injection into graphene and for studying spin transfer between TMDC and graphene. △ Less

Submitted 30 June, 2015; originally announced June 2015.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 92, 155403 (2015)

Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene

Authors: Denis Kochan, Susanne Irmer, Martin Gmitra, Jaroslav Fabian

Abstract: We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former give narrow resonances at the charge neutrality point. Opposite to single-layer graphene, the measured spin-relaxation rate in graphene bilayer increases with carr… ▽ More We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former give narrow resonances at the charge neutrality point. Opposite to single-layer graphene, the measured spin-relaxation rate in graphene bilayer increases with carrier density. Although it has been commonly argued that a different mechanism must be at play for the two structures, our model explains this behavior rather naturally in terms of different broadening scales for the same underlying resonant processes. Not only our results---using robust and first-principles inspired parameters---agree with experiment, they also predict an experimentally testable sharp decrease of the spin-relaxation rate at high carrier densities. △ Less

Submitted 29 February, 2016; v1 submitted 15 April, 2015; originally announced April 2015.

Comments: 6 pages, 3 figures + 2 pages Suppl. Material

Journal ref: Phys. Rev. Lett. 115, 196601 (2015)

Spin Transport in Hydrogenated Graphene

Authors: David Soriano, Dinh Van Tuan, Simon M. -M. Dubois, Martin Gmitra, Aron W. Cummings, Denis Kochan, Frank Ortmann, Jean-Christophe Charlier, Jaroslav Fabian, Stephan Roche

Abstract: In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with… ▽ More In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with the formation of a local magnetic moment. First-principles calculations of hydrogenated graphene unravel the strong interplay of spin-orbit and exchange couplings. The concept of magnetic scattering resonances, recently introduced \cite{Kochan2014} is revisited by describing the local magnetism through the self-consistent Hubbard model in the mean field approximation in the dilute limit, while spin relaxation lengths and transport times are computed using an efficient real space order N wavepacket propagation method. Typical spin lifetimes on the order of 1 nanosecond are obtained for 1 ppm of hydrogen impurities (corresponding to transport time about 50 ps), and the scaling of spin lifetimes with impurity density is described by the Elliott-Yafet mechanism. This reinforces the statement that magnetism is the origin of the substantial spin polarization loss in the ultraclean graphene limit. △ Less

Submitted 7 April, 2015; originally announced April 2015.

Comments: 10 pages, 8 figures, accepted for publication in 2D Materials as a Topical Review

Journal ref: 2D Mater. 2, 022002 (2015)

Graphene Spintronics

Authors: Wei Han, Roland K. Kawakami, Martin Gmitra, Jaroslav Fabian

Abstract: The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics… ▽ More The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials. △ Less

Submitted 9 March, 2015; originally announced March 2015.

Comments: 47 Pages, 6 figures

Journal ref: Nature Nanotechnology 9, 794-807 (2014)

Spin-orbit coupling in fluorinated graphene

Authors: Susanne Irmer, Tobias Frank, Sebastian Putz, Martin Gmitra, Denis Kochan, Jaroslav Fabian

Abstract: We report on theoretical investigations of the spin-orbit coupling effects in fluorinated graphene. First-principles density functional calculations are performed for the dense and dilute adatom coverage limits. The dense limit is represented by the single-side semifluorinated graphene, which is a metal with spin-orbit splittings of about 10 meV. To simulate the effects of a single adatom, we also… ▽ More We report on theoretical investigations of the spin-orbit coupling effects in fluorinated graphene. First-principles density functional calculations are performed for the dense and dilute adatom coverage limits. The dense limit is represented by the single-side semifluorinated graphene, which is a metal with spin-orbit splittings of about 10 meV. To simulate the effects of a single adatom, we also calculate the electronic structure of a $10 \times 10$ supercell, with one fluorine atom in the top position. Since this dilute limit is useful to study spin transport and spin relaxation, we also introduce a realistic effective hop** Hamiltonian, based on symmetry considerations, which describes the supercell bands around the Fermi level. We provide the Hamiltonian parameters which are best fits to the first-principles data. We demonstrate that, unlike for the case of hydrogen adatoms, fluorine's own spin-orbit coupling is the principal cause of the giant induced local spin-orbit coupling in graphene. The $sp^3$ hybridization induced transfer of spin-orbit coupling from graphene's $σ$ bonds, important for hydrogenated graphene, contributes much less. Furthermore, the magnitude of the induced spin-orbit coupling due to fluorine adatoms is about $1000$ times more than that of pristine graphene, and 10 times more than that of hydrogenated graphene. Also unlike hydrogen, the fluorine adatom is not a narrow resonant scatterer at the Dirac point. The resonant peak in the density of states of fluorinated graphene in the dilute limit lies 260 meV below the Dirac point. The peak is rather broad, about 300 meV, making the fluorine adatom only a weakly resonant scatterer. △ Less

Submitted 5 April, 2015; v1 submitted 31 October, 2014; originally announced November 2014.

Comments: 11 pages, 14 figures

Journal ref: Phys. Rev. B 91, 115141 (2015)