Clam** effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)
Authors:
Sebastian Kölsch,
Alfons Schuck,
Olena Fedchenko,
Dmitry Vasilyev,
Sergeij Chernov,
Lena Tkach,
Christoph Schlüter,
Thiago R. F. Peixoto,
Andrii Gloskowski,
Hans-Joachim Elmers,
Gerd Schönhense,
Cornelius Krellner,
Michael Huth
Abstract:
Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray…
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Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.
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Submitted 31 August, 2022;
originally announced August 2022.
Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Authors:
Michael Zapf,
Matthias Schmitt,
Judith Gabel,
Philipp Scheiderer,
Martin Stübinger,
Berengar Leikert,
Giorgio Sangiovanni,
Lenart Dudy,
Sergii Chernov,
Sergey Babenkov,
Dmitry Vasilyev,
Olena Fedchenko,
Katerina Medjanik,
Yury Matveyev,
Andrei Gloskowski,
Christoph Schlueter,
Tien-Lin Lee,
Hans-Joachim Elmers,
Gerd Schönhense,
Michael Sing,
Ralph Claessen
Abstract:
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by…
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Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.
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Submitted 20 September, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
