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Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars
Authors:
Philippe Drolet,
Raphaël Dawant,
Victor Yon,
Pierre-Antoine Mouny,
Matthieu Valdenaire,
Javier Arias Zapata,
Pierre Gliech,
Sean U. N. Wood,
Serge Ecoffey,
Fabien Alibart,
Yann Beilliard,
Dominique Drouin
Abstract:
Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losse…
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Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losses in precision due to hardware variabilities such as sneak path currents, biasing scheme effects and conductance tuning imprecision. In this work, training approaches that adapt techniques such as dropout, the reparametrization trick and regularization to TiO2 crossbar variabilities are proposed in order to generate models that are better adapted to their hardware transfers. The viability of this approach is demonstrated by comparing the outputs and precision of the proposed hardware-aware network with those of a regular fully connected network over a few thousand weight transfers using the half moons dataset in a simulation based on experimental data. For the neural network trained using the proposed hardware-aware method, 79.5% of the test set's data points can be classified with an accuracy of 95% or higher, while only 18.5% of the test set's data points can be classified with this accuracy by the regularly trained neural network.
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Submitted 29 May, 2023;
originally announced May 2023.
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Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control
Authors:
Pierre-Antoine Mouny,
Yann Beilliard,
Sébastien Graveline,
Marc-Antoine Roux,
Abdelouadoud El Mesoudy,
Raphaël Dawant,
Pierre Gliech,
Serge Ecoffey,
Fabien Alibart,
Michel Pioro-Ladrière,
Dominique Drouin
Abstract:
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryo…
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Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the electrical performance of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV in-situ memristor-based DC source. Finally, we simulate the biasing of double quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This demonstration is a first step towards more advanced cryogenic applications for resistive memories such as cryogenic control electronics for quantum computers.
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Submitted 22 March, 2022; v1 submitted 14 March, 2022;
originally announced March 2022.
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Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing
Authors:
Abdelouadoud El Mesoudy,
Gwénaëlle Lamri,
Raphaël Dawant,
Javier Arias-Zapata,
Pierre Gliech,
Yann Beilliard,
Serge Ecoffey,
Andreas Ruediger,
Fabien Alibart,
Dominique Drouin
Abstract:
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in develo** memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for…
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Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in develo** memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.
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Submitted 8 December, 2021; v1 submitted 22 June, 2021;
originally announced June 2021.
