A Hermetic On-Cryostat Helium Source for Low Temperature Experiments
Authors:
K. E. Castoria,
H. Byeon,
J. Theis,
N. R. Beysengulov,
E. O. Glen,
G. Koolstra,
M. Sammon,
S. A. Lyon,
J. Pollanen,
D. G. Rees
Abstract:
We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as moni…
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We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as monitored via the frequency response of a planar superconducting resonator device sensitive to small amounts of liquid helium. This on-cryostat helium source negates the use of a filling tube between the cryogenic volumes and room temperature, thereby preventing unwanted effects such as such as temperature instabilities that arise from the thermomechanical motion of helium within the system. This helium source can be used in experiments investigating the properties of quantum fluids or to better thermalize quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
Five-second coherence of a single spin with single-shot readout in silicon carbide
Authors:
Christopher P. Anderson,
Elena O. Glen,
Cyrus Zeledon,
Alexandre Bourassa,
Yu **,
Yizhi Zhu,
Christian Vorwerk,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
Giulia Galli,
David D. Awschalom
Abstract:
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selec…
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An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selection, resulting in a high signal-to-noise ratio (SNR) that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system. The map** of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.
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Submitted 5 October, 2021; v1 submitted 4 October, 2021;
originally announced October 2021.
