Showing 1–11 of 11 results for author: Glavin, N R

Materials for High Temperature Digital Electronics

Authors: Dhiren K. Pradhan, David C. Moore, A. Matt Francis, Jacob Kupernik, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 °C. The emergent technological frontiers of s… ▽ More Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 °C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 °C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology. △ Less

Submitted 4 April, 2024; originally announced April 2024.

Comments: 6 Figures

Probing interlayer interactions and commensurate-incommensurate transition in twisted bilayer graphene through Raman spectroscopy

Authors: Vineet Pandey, Subhendu Mishra, Nikhilesh Maity, Sourav Paul, Abhijith M B, Ajit Roy, Nicholas R Glavin, Kenji Watanabe, Takashi Taniguchi, Abhishek Kumar Singh, Vidya Kochat

Abstract: Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe the changes in the interlayer… ▽ More Twisted 2D layered materials have garnered a lot of attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation / twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe the changes in the interlayer interactions and electron-phonon scattering pathways as the twist angle is varied from 0° to 30°, using Raman spectroscopy. The long range Moiré potential of the superlattice gives rise to additional intravalley and intervalley scattering of the electrons in TBLG which have been investigated through their Raman signatures. The density functional theory (DFT) calculations of the electronic band structure of the TBLG superlattices was found to be in agreement with the resonant Raman excitations across the van Hove singularities in the valence and conduction bands predicted for TBLG due to hybridization of bands from the two layers. We also observe that the relative rotation between the graphene layers has a marked influence on the second order overtone and combination Raman modes signalling a commensurate-incommensurate transition in TBLG as the twist angle increases. This serves as a convenient and rapid characterization tool to determine the degree of commensurability in TBLG systems. △ Less

Submitted 2 November, 2023; originally announced November 2023.

Journal ref: ACS Nano 2024

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Authors: Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim, Yunfei He, Pariasadat Musavigharavi, Kwan-Ho Kim, Nishant Sharma, Zirun Han, Xingyu Du, Venkata S. Puli, Eric A. Stach, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices ope… ▽ More Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $μ$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $μ$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers. △ Less

Submitted 8 September, 2023; originally announced September 2023.

Comments: MS and SI

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Authors: Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens, Kiyoung Jo, Jeng-Yuan Tsai, Saiphaneendra Bachu, Meghan Leger, Kyung Yeol Ma, Nicholas R. Glavin, Hyeon Suk Shin, Nasim Alem, Qimin Yan, Joshua R. Hedrickson, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine… ▽ More Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: Main Manuscript: 29 pages, 4 figures Supplementary Information: 14 pages, 12 figures

Wafer-scale growth of two-dimensional, phase-pure InSe

Authors: Seunguk Song, Sungho Jeon, Mahfujur Rahaman, Jason Lynch, Pawan Kumar, Srikrishna Chakravarthi, Gwangwoo Kim, Xingyu Du, Eric Blanton, Kim Kisslinger, Michael Snure, Nicholas R. Glavin, Eric A. Stach, Roy H. Olsson, Deep Jariwala

Abstract: Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the d… ▽ More Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Comments: MS + SI

Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal

Authors: Adam D. Alfieri, Michael J. Motala, Michael Snure, Jason Lynch, Pawan Kumar, Huiqin Zhang, Susanna Post, Christopher Muratore, Joshua R. Hendrickson, Nicholas R. Glavin, Deep Jariwala

Abstract: Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broa… ▽ More Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalable semimetal that concurrently possesses high index and high extinction across the vis-NIR range. Consequently, the thin-film PtSe2 on a reflector separated by a dielectric spacer can absorb > 85 % for the unpatterned case and ~97 % for the optimized 2D metasurface in the 400-900 nm range making it one of the strongest and thinnest broadband perfect absorbers to date. Our results present a scalable approach to photodetection and solar energy harvesting, demonstrating the practical utility of high index, high extinction semimetals for nanoscale optics. △ Less

Submitted 28 August, 2022; originally announced August 2022.

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Authors: Gwangwoo Kim, Hyong Min Kim, Pawan Kumar, Mahfujur Rahaman, Christopher E. Stevens, Jonghyuk Jeon, Kiyoung Jo, Kwan-Ho Kim, Nicholas Trainor, Haoyue Zhu, Byeong-Hyeok Sohn, Eric A. Stach, Joshua R. Hendrickson, Nicholas R Glavin, Joonki Suh, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained… ▽ More Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: 45 pages, 20 figures (5 main figures, 15 supporting figures)

Journal ref: ACS Nano, 2022

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Synthesis and Tailored Properties Towards Designer Covalent Organic Framework Thin Films and Heterostructures

Authors: Lucas K. Beagle, Qiyi Fang, Ly D. Tran, Luke A. Baldwin, Christopher Muratore, Jun Lou, Nicholas R. Glavin

Abstract: Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and m… ▽ More Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and mechanical delamination. Recent progress in the construction and tailored properties of thin film COFs are highlighted in this review, addressing mechanical properties as well as application-focused properties in filtration, electronics, sensors, electrochemical, magnetics, optoelectronics and beyond. Additionally, heterogeneous integration of these thin films with other inorganic and organic materials is discussed, revealing exciting opportunities to integrate COF thin films with other state of the art material and device systems. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer

Authors: Eric W. Blanton, Michael J. Motala, Timothy A. Prusnick, Albert Hilton, Jeff L. Brown, Arkka Bhattacharyya, Sriram Krishnamoorthy, Kevin Leedy, Nicholas R. Glavin, Michael Snure

Abstract: Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and two-dimensional (2D) materials, using… ▽ More Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and two-dimensional (2D) materials, using 2D boron nitride (BN)-on-sapphire templates is demonstrated. The van der Waals BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for van der Waals bonding. A tensilely-stressed Ni layer sputtered on top of the film induces controlled spalling fracture which propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity is greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a selected area lift-off technique is developed which allows for isolation and transfer of individual devices while maximizing wafer area use and minimizing extra alignment steps in the integration process. △ Less

Submitted 14 May, 2021; originally announced May 2021.

Comments: 11 pages, 4 figures

Light-Matter Coupling in Scalable Van der Waals Superlattices

Authors: Pawan Kumar, Jason Lynch, Baokun Song, Haonan Ling, Francisco Barrera, Huiqin Zhang, Surendra B. Anantharaman, Jagrit Digani, Haoyue Zhu, Tanushree H. Choudhury, Clifford McAleese, Xiaochen Wang, Ben R. Conran, Oliver Whear, Michael J. Motala, Michael Snure, Christopher Muratore, Joan M. Redwing, Nicholas R. Glavin, Eric A. Stach, Artur R. Davoyan, Deep Jariwala

Abstract: Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks… ▽ More Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 4 figures + supporting