-
Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate
Authors:
A. Mukherjee,
C. T. Ellis,
M. M. Arik,
P. Taheri,
E. Oliverio,
P. Fowler,
J. G. Tischler,
Y. Liu,
E. R. Glaser,
R. L. Myers-Ward,
J. L. Tedesco,
C. R. Eddy Jr,
D. Kurt Gaskill,
H. Zeng,
G. Wang,
J. Cerne
Abstract:
We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk Si…
▽ More
We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk SiC. Our experiments and modelling indicate that the enhancement occurs at the high-energy edge of the SiC reststrahlen band where the real component of the complex refractive index n passes through unity. Furthermore, since the signal is greatly enhanced when n=1, the enhancement is predicted to exist over the entire visible/infrared (IR) spectrum for a free-standing film. We also predict similar giant enhancement in both Faraday (transmission) and Kerr rotation for thin films on a metamaterial substrate with refractive index n=-1. This work demonstrates that the substrate used in MOKE measurements must be carefully chosen when investigating magneto-optical materials with weak MOKE signals or when designing MOKE-based optoelectronic devices.
△ Less
Submitted 19 January, 2019;
originally announced January 2019.
-
Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
Authors:
P. G. Brereton,
D. Puent,
J. Vanhoy,
E. R. Glaser,
S. G. Carter
Abstract:
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies gen…
▽ More
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. This result will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions of in high-density ensembles of defects.
△ Less
Submitted 14 October, 2019; v1 submitted 26 December, 2018;
originally announced December 2018.
-
Anisotropies in the linear polarization of vacancy photoluminescence in diamond induced by crystal rotations and strong magnetic fields
Authors:
D. Braukmann,
V. P. Popov,
E. R. Glaser,
T. A. Kennedy,
M. Bayer,
J. Debus
Abstract:
We study the linear polarization properties of the photoluminescence of the neutral and negatively charged nitrogen vacancies and neutral vacancies in diamond crystals as function of their symmetry and their response to strong external magnetic fields. The linear polarization degree, which exceeds 10% at room temperature, and rotation of the polarization plane of their zero-phonon lines significan…
▽ More
We study the linear polarization properties of the photoluminescence of the neutral and negatively charged nitrogen vacancies and neutral vacancies in diamond crystals as function of their symmetry and their response to strong external magnetic fields. The linear polarization degree, which exceeds 10% at room temperature, and rotation of the polarization plane of their zero-phonon lines significantly depend on the crystal rotation around specific axes demonstrating anisotropic angular evolutions. The sign of the polarization plane rotation is changed periodically through the crystal rotation, which indicates a switching between electron excited states of orthogonal linear polarizations. At external magnetic fields of up to 10 T, the angular dependences of the linear polarization degree experience a remarkable phase shift. Moreover, the rotation of the linear polarization plane increases linearly with rising magnetic field at 6 K and room temperature, for the negatively charged nitrogen vacancies, which is attributed to magneto-optical Faraday rotation.
△ Less
Submitted 9 November, 2017; v1 submitted 8 December, 2016;
originally announced December 2016.
-
Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
Authors:
S. G. Carter,
Ö. O. Soykal,
Pratibha Dev,
Sophia E. Economou,
E. R. Glaser
Abstract:
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 $μ$s at low fields to 80 $μ$s at 68…
▽ More
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 $μ$s at low fields to 80 $μ$s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is well-described by a theoretical model.
△ Less
Submitted 18 June, 2015;
originally announced June 2015.
-
Possible Room Temperature Ferromagnetism in Hydrogenated Carbon Nanotubes
Authors:
Adam L. Friedman,
Hyunkyung Chun,
Yung Joon Jung,
Don Heiman,
Evan R. Glaser,
Latika Menon
Abstract:
We find that ferromagnetism can be induced in carbon nanotubes (CNTs) by introducing hydrogen. Multiwalled CNTs grown inside porous alumina templates contain a large density of defects resulting in significant hydrogen uptake when annealed at high temperatures. This hydrogen incorporation produces H-complex and adatom magnetism which generates a sizeable ferromagnetic moment and a Curie temperat…
▽ More
We find that ferromagnetism can be induced in carbon nanotubes (CNTs) by introducing hydrogen. Multiwalled CNTs grown inside porous alumina templates contain a large density of defects resulting in significant hydrogen uptake when annealed at high temperatures. This hydrogen incorporation produces H-complex and adatom magnetism which generates a sizeable ferromagnetic moment and a Curie temperature near Tc=1000 K. We studied the conditions for the incorporation of hydrogen, the temperature-dependent magnetic behavior, and the dependence of the ferromagnetism on the size of the nanotubes.
△ Less
Submitted 19 March, 2010; v1 submitted 28 January, 2010;
originally announced January 2010.
