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Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)
Authors:
K. R. Simov,
P. -A. Glans,
C. A. Jenkins,
M. Liberati,
P. Reinke1
Abstract:
Mn do** of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a δ-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge cap** layer, which conserves the identity of the δ-doped layer. The ana…
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Mn do** of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a δ-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge cap** layer, which conserves the identity of the δ-doped layer. The analysis of the bonding environment with STM is combined with the element-specific detection of the magnetic signature with X-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires, which have ionic bonding character, with an a-Ge overlayer cap, a-Si cap** leads to a slightly reduced moment which has its origin in subtle variation of bonding geometry. Our results directly confirm theoretical predictions on magnetism for Mn-adatoms on Si(001). The moment is quenched to 0.5μB/Mn for δ-doped layers, which are dominated by clusters, and thus develop an antiferromagnetic component from Mn-Mn bonding.
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Submitted 1 July, 2017;
originally announced July 2017.
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Low-energy V t2g orbital excitations in NdVO3
Authors:
J. Laverock,
B. Chen,
A. R. H. Preston,
D. Newby Jr.,
L. F. J. Piper,
L. D. Tung,
G. Balakrishnan,
P. -A. Glans,
J. -H. Guo,
K. E. Smith
Abstract:
The electronic structure of NdVO3, YVO3 has been investigated as a function of sample temperature using resonant inelastic soft x-ray scattering at the V L3-edge. Most of the observed spectral features are in good agreement with an atomic crystal-field multiplet model. However, a low energy feature is observed at ~0.4 eV that cannot be explained by crystal-field arguments. The resonant behaviour o…
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The electronic structure of NdVO3, YVO3 has been investigated as a function of sample temperature using resonant inelastic soft x-ray scattering at the V L3-edge. Most of the observed spectral features are in good agreement with an atomic crystal-field multiplet model. However, a low energy feature is observed at ~0.4 eV that cannot be explained by crystal-field arguments. The resonant behaviour of this feature establishes it as due to excitations of the V t2g states. Moreover, this feature exhibits a strong sample temperature dependence, reaching maximum intensity in the orbitally-ordered phase of NdVO3, before becoming suppressed at low temperatures. This behaviour indicates that the origin of this feature is a collective orbital excitation, i.e. the bi-orbiton.
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Submitted 17 November, 2014;
originally announced November 2014.
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Electronic structure of the kagome staircase compounds Ni3V2O8 and Co3V2O8
Authors:
J. Laverock,
B. Chen,
A. R. H. Preston,
K. E. Smith,
N. R. Wilson,
G. Balakrishnan,
P. -A. Glans,
J. -H. Guo
Abstract:
The electronic structure of the kagome staircase compounds, Ni3V2O8 and Co3V2O8, has been investigated using soft x-ray absorption, soft x-ray emission, and resonant inelastic x-ray scattering (RIXS). Comparison between the two compounds, and with first principles band structure calculations and crystal-field multiplet models, provide unique insight into the electronic structure of the two materia…
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The electronic structure of the kagome staircase compounds, Ni3V2O8 and Co3V2O8, has been investigated using soft x-ray absorption, soft x-ray emission, and resonant inelastic x-ray scattering (RIXS). Comparison between the two compounds, and with first principles band structure calculations and crystal-field multiplet models, provide unique insight into the electronic structure of the two materials. Whereas the location of the narrow (Ni,Co) d bands is predicted to be close to EF, we experimentally find they lie deeper in the occupied O 2p and unoccupied V 3d manifolds, and determine their energy via measured charge-transfer excitations. Additionally, we find evidence for a dd excitation at 1.5 eV in Ni3V2O8, suggesting the V d states may be weakly occupied in this compound, contrary to Co3V2O8. Good agreement is found between the crystal-field dd excitations observed in the experiment and predicted by atomic multiplet theory.
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Submitted 1 May, 2013;
originally announced May 2013.
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Strain dependence of bonding and hybridization across the metal-insulator transition of VO2
Authors:
J. Laverock,
L. F. J. Piper,
A. R. H. Preston,
B. Chen,
J. McNulty,
K. E. Smith,
S. Kittiwatanakul,
J. W. Lu,
S. A. Wolf,
P. -A. Glans,
J. -H. Guo
Abstract:
Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly str…
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Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO2.
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Submitted 10 February, 2012;
originally announced February 2012.
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Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
Authors:
H. Kohlstedt,
A. Petraru,
M. Meier J. Denlinger,
J. Guo,
Y. Wanli,
A. Scholl,
B. Freelon,
T. Schneller,
R. Waser,
P. Yu,
R. Ramesh,
T. Learmonth,
P. -A. Glans,
K. E. Smith
Abstract:
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr…
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We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
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Submitted 23 October, 2008;
originally announced October 2008.
