Showing 1–50 of 50 results for author: Giubileo, F

Gas dependent hysteresis in MoS$_2$ field effect transistors

Authors: F. Urban, F. Giubileo, A. Grillo, L. Iemmo, G. Luongo, M. Passacantando, T. Foller, L. Madauß, E. Pollmann, M. P. Geller, D. Oing, M. Schleberger, A. Di Bartolomeo

Abstract: We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although… ▽ More We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Comments: 8 pages, 5 figures

Journal ref: 2019 2D Materials 6 045049

Memory effects in black phosphorus field effect transistors

Authors: Alessandro Grillo, Aniello Pelella, Enver Faella, Filippo Giubileo, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo

Abstract: We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with e… ▽ More We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

Authors: Alessandro Grillo, Enver Faella, Aniello Pelella, Filippo Giubileo, Lida Ansari, Farzan Gity, Paul K. Hurley, Niall McEvoy, Antonio Di Bartolomeo

Abstract: Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by enviro… ▽ More Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is rised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe_2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe_2 film provides an effective route for modulating the density of carriers and the optical properties of the material. △ Less

Submitted 20 July, 2021; originally announced July 2021.

Comments: 20 pages, 4 figure panels

Report number: Adv. Funct. Mater. 2021, 2105722

Journal ref: Adv. Funct. Mater. 2021, 2105722

Gate-controlled field emission current from MoS$_2$ nanosheets

Authors: Aniello Pelella, Alessandro Grillo, Francesca Urban, Filippo Giubileo, Maurizio Passacantando, Erik Pollmann, Stephan Sleziona, Marika Schleberger, Antonio Di Bartolomeo

Abstract: Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurem… ▽ More Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission. △ Less

Submitted 22 August, 2020; originally announced August 2020.

Comments: 12 pages, 5 figures

Field emission from AlGaN nanowires with low turn-on field

Authors: Filippo Giubileo, Antonio Di Bartolomeo, Yun Zhong, Songrui Zhao, Maurizio Passacantando

Abstract: We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are anal… ▽ More We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are analyzed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as $β$ = 556 and a minimum turn-on field $E_{turn-on}$ = 17 V/$μ$m for a cathode-anode separation distance d = 500 nm. We show that for increasing separation distance, $E_{turn-on}$ increases up to about 35 V/$μ$m and $β$ decreases to 100 at d = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters. △ Less

Submitted 7 August, 2020; originally announced August 2020.

Comments: 13 pages, 5 figures

Field emission from two-dimensional GeAs

Authors: Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo, Luca Camilli, Jianbo Sun, Daniele Capista, Maurizio Passacantando

Abstract: GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron… ▽ More GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/μm and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Comments: 10 pages, 3 figures

Report number: 2021 J. Phys. D: Appl. Phys. 54 105302

Journal ref: Journal of Physics D: Applied Physics 2021, 54 105302

Vacuum gauge from ultrathin MoS2 transistor

Authors: A. Di Bartolomeo, A. Pelella, A. Grillo, F. Urban, L. Iemmo, E. Faella, N. Martucciello, F. Giubileo

Abstract: We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-… ▽ More We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-do** of the MoS2 channel. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Comments: 10 pages, 4 figure - conference paper

Field emission characteristics of InSb patterned nanowires

Authors: Filippo Giubileo, Maurizio Passacantando, Francesca Urban, Alessandro Grillo, Laura Iemmo, Aniello Pelella, Curtis Goosney, Ray LaPierre, Antonio Di Bartolomeo

Abstract: InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracte… ▽ More InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm. △ Less

Submitted 28 April, 2020; originally announced April 2020.

Comments: 20 pages, 6 figures

Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors

Authors: A. Pelella, O. Kharsah, A. Grillo, F. Urban, M. Passacantando, F. Giubileo, L. Iemmo, S. Sleziona, E. Pollmann, L. Madauß, M. Schleberger, A. Di Bartolomeo

Abstract: This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H… ▽ More This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. △ Less

Submitted 2 April, 2020; originally announced April 2020.

Electron irradiation on multilayer PdSe$_2$ field effect transistors

Authors: A. Di Bartolomeo, F. Urban, A. Pelella, A. Grillo, M. Passacantando, X. Liu, F. Giubileo

Abstract: Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drai… ▽ More Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trap** in slow trap states at the Si/SiO_2 interface. △ Less

Submitted 22 February, 2020; originally announced February 2020.

Comments: 15 pages, 4 figures

Journal ref: Nanotechnology 2020

Field emission in ultrathin PdSe2 back-gated transistors

Authors: A. Di Bartolomeo, A. Pelella, F. Urban, A. Grillo, L. Iemmo, M. Passacantando, X. Liu, F. Giubileo

Abstract: We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In th… ▽ More We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: 12 pages, 4 figures

Journal ref: Adv. Electron. Mater. 2020, 2000094

Field Emission Characterization of MoS2 Nanoflowers

Authors: Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando, Francesca Urban, Laura Iemmo, Giuseppe Luongo, Aniello Pelella, Melanie Loveridge, Luca Lozzi, Antonio Di Bartolomeo

Abstract: Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down… ▽ More Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance. △ Less

Submitted 18 June, 2019; originally announced June 2019.

Journal ref: Nanomaterials 2019, 9, 717

Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors

Authors: Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu, Feng Miao, Maurizio Passacantando, Filippo Giubileo, Alessandro Grillo, Laura Iemmo, Francesca Urban, Shi-Jun Liang

Abstract: A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environmen… ▽ More A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents. △ Less

Submitted 1 February, 2019; originally announced February 2019.

Comments: 21 pages - 5 figure panels

Journal ref: Adv. Funct. Mater. 2019, 29, 1902483

A WSe2 vertical field emission transistor

Authors: Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando, Niall McEvoy, Lisanne Peters, Laura Iemmo, Giuseppe Luongo, Francesco Romeo, Filippo Giubileo

Abstract: We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Sch… ▽ More We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ~100 V μm^(-1) and exhibit good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics. △ Less

Submitted 18 August, 2018; v1 submitted 6 August, 2018; originally announced August 2018.

Comments: 16 pages, 6 figures

Report number: Nanoscale, 2019,11, 1538-1548

Journal ref: Nanoscale, 2019,11, 1538-1548

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Authors: Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban, Laura Iemmo, Filippo Giubileo, Giuseppe Luongo, Giampiero Amato, Luca Croin, Linfeng Sun, Shi-Jun Liang, Lay Kee Ang

Abstract: We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to… ▽ More We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface. △ Less

Submitted 6 August, 2018; originally announced August 2018.

Comments: 22 pages, 5 figure

Journal ref: Advanced Functional Materials 2018, 28, 1800657

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Authors: Filippo Giubileo, Laura Iemmo, Maurizio Passacantando, Francesca Urban, Giuseppe Luongo, Lingfeng Sun, Giampiero Amato, Emanuele Enrico, Antonio Di Bartolomeo

Abstract: Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapp… ▽ More Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications. △ Less

Submitted 3 August, 2018; originally announced August 2018.

Journal ref: Journal of Physical Chemistry C 123, Issue 2, 2019, Pages 1454-1461

Graphene-Silicon Schottky diodes for photodetection

Authors: Antonio Di Bartolomeo, Giuseppe Luongo, Laura Iemmo, Filippo Giubileo

Abstract: We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the interna… ▽ More We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips. △ Less

Submitted 27 October, 2017; originally announced October 2017.

Comments: 5 pages, 9 figures

Field emission from self-catalyzed GaAs nanowires

Authors: Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo, Giuseppe Luongo, Maurizio Passacantando, Eero Koivusalo, Teemu V. Hakkarainen, Mircea Guina

Abstract: We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field… ▽ More We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Comments: Accepted for publication in Nanomaterials

Journal ref: Nanomaterials 7, Issue 9, 2017, Article number 275

Graphene enhanced field emission from InP nanocrystals

Authors: L. Iemmo, A. Di Bartolomeo, F. Giubileo, G. Luongo, M. Passacantando, G. Niu, F. Hatami, O. Skibitzki, T. Schroeder

Abstract: We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find t… ▽ More We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics. △ Less

Submitted 6 August, 2017; originally announced August 2017.

Comments: 7 pages, 3 figures

Journal ref: 2017 Nanotechnology 28 495705

Hysteresis in the transfer characteristics of MoS2 transistors

Authors: Antonio Di Bartolomeo, Luca Genovese, Filippo Giubileo, Laura Iemmo, Giuseppe Luongo, Tobias Foller, Marika Schleberger

Abstract: We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-fac… ▽ More We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trap** at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trap**, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices. △ Less

Submitted 3 August, 2017; originally announced August 2017.

Comments: 11 pages, 6 figures

Journal ref: 2D Materials 5 (2018) 015014

The role of contact resistance in graphene field-effect devices

Authors: Filippo Giubileo, Antonio Di Bartolomeo

Abstract: The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact… ▽ More The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation. △ Less

Submitted 11 May, 2017; originally announced May 2017.

Comments: 70 pages, 18 figures, review article, Accepted for publication in "Progress in Surface Science"

Journal ref: Progress in Surface Science 92(3), pp. 143-175, 2017

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Authors: Antonio Di Bartolomeo, Luca Genovese, Tobias Foller, Filippo Giubileo, Giuseppe Luongo, Luca Croin, Shi-Jun Liang, L. K. Ang, Marika Schleberger

Abstract: We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity a… ▽ More We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trap** at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 kΩ/μm, ON current as high as 1.25 nA/μm, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W. △ Less

Submitted 24 March, 2017; originally announced March 2017.

Comments: Research paper, 12 pages, 4 figures

Journal ref: Nanotechnology 28 (2017) 214002

Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes

Authors: F. Giubileo, L. Iemmo, G. Luongo, N. Martucciello, M. Raimondo, L. Guadagno, M. Passacantando, K. Lafdi, A. Di Bartolomeo

Abstract: We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2… ▽ More We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2 K to 430 K a further linear contribution is necessary. The field emission properties are measured by means of a nanocontrolled metallic tip acting as collector electrode to access local information about buckypaper properties from areas as small as 1 um2. Emitted current up to 10-5A and turn-on field of about 140V/um are recorded. Long operation, stability and robustness of emitters have been probed by field emission intensity monitoring for more than 12 hours at pressure of 10-6 mbar. Finally, no tuning of the emitted current was observed for in plane applied currents in the buckypaper. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 18 pages, 5 figures

Journal ref: J Mater Sci (2017) 52:6459-6468

Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect

Authors: Antonio Di Bartolomeo, Giuseppe Luongo, Filippo Giubileo, Nicola Funicello, Gang Niu, Thomas Schroeder, Marco Lisker, Grzegorz Lupina

Abstract: We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device… ▽ More We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effective Richardson constant A**=4 10^(-5) Acm^(-2) K^(-2) and an ideality factor n=3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface. △ Less

Submitted 23 January, 2017; originally announced January 2017.

Comments: Research paper. 26 pages, 8 figures

Journal ref: 2D Materials 4 (2017) 025075

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Authors: Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu, Viktoria Schlykow, Grzegorz Lupina, Filippo Giubileo, Thomas Schroeder

Abstract: We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that f… ▽ More We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that field emission can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior. △ Less

Submitted 8 August, 2016; originally announced August 2016.

Comments: Research paper. 7 pages, 4 figures

Journal ref: Nanotechnology 27 (2016) 485707

Low-energy electron-irradiation effect on transport properties of graphene field effect transistor

Authors: F. Giubileo, A. Di Bartolomeo, N. Martucciello, F. Romeo, L. Iemmo, P. Romano, M. Passacantando

Abstract: We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate,… ▽ More We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate, we analyze the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate that low energy irradiation is detrimental on the transistor current capability, resulting in an increase of the contact resistance and a reduction of the carrier mobility even at electron doses as low as 30 $e^-/nm^2$. We also show that the irradiated devices recover by returning to their pristine state after few repeated electrical measurements. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Comments: 10 pages, 5 figures

Journal ref: Nanomaterials 2016, 6, 206

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Authors: Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo, Laura Iemmo, Nadia Martucciello, Gang Niu, Mirko Fraschke, Oliver Skibitzki, Thomas Schroeder, Grzegorz Lupina

Abstract: We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor ga… ▽ More We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Comments: Research paper, 22 pages, 7 figures

Journal ref: 2D Materials 4 (2017) 015024

Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate

Authors: Antonio Di Bartolomeo, Filippo Giubileo, Laura Iemmo, Francesco Romeo, Saverio Russo, Selim Unal, Maurizio Passacantando, Valentina Grossi, Anna Maria Cucolo

Abstract: We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, re… ▽ More We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices. △ Less

Submitted 30 January, 2016; v1 submitted 18 January, 2016; originally announced January 2016.

Comments: Research article, 8 pages, 5 figures

Journal ref: Applied Physics Letters 109, 023510 (2016)

Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics

Authors: Antonio Di Bartolomeo, Filippo Giubileo, Francesco Romeo, Paolo Sabatino, Giovanni Carapella, Laura Iemmo, Thomas Schroeder, Grzegorz Lupina

Abstract: We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb… ▽ More We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface. △ Less

Submitted 4 August, 2015; originally announced August 2015.

Comments: 10 pages, Research Paper

Journal ref: Nanotechnology 26 475202 (2015)

Generalization of Blonder-Tinkham-Klapwijk theory to particle-hole mixing boundary conditions: π-shift and conductance dips

Authors: M. Catapano, F. Romeo, R. Citro, F. Giubileo

Abstract: We generalize the Blonder-Tinkham-Klapwijk theory considering non-diagonal boundary conditions in the Bogoliubov-de Gennes scattering problem, to describe anomalous conductance features often reported for normal-metal/superconductor contacts. We calculate the differential conductance spectra showing that conductance dips, not expected in the standard formulation, are explained in terms of phase π-… ▽ More We generalize the Blonder-Tinkham-Klapwijk theory considering non-diagonal boundary conditions in the Bogoliubov-de Gennes scattering problem, to describe anomalous conductance features often reported for normal-metal/superconductor contacts. We calculate the differential conductance spectra showing that conductance dips, not expected in the standard formulation, are explained in terms of phase π-shift, between the bulk and the interface order parameter, possibly induced by a localized magnetic moment. A discretized model is used to give quantitative evaluation of the physical conditions, namely the polarization and transparency of the interface, needed to realize the phase gradient. △ Less

Submitted 27 February, 2015; originally announced February 2015.

Comments: 7 pages, 5 figures

Journal ref: Eur. Phys. J. B 88, 329 (2015)

Local characterization of ferromagnetic properties in ferromagnet/superconductor bilayer by Point Contact Andreev Reflection Spectroscopy

Authors: Filippo Giubileo, Francesco Romeo, Roberta Citro, Antonio Di Bartolomeo, Carmine Attanasio, Carla Cirillo, Albino Polcari, Paola Romano

Abstract: We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thi… ▽ More We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thickness of ferromagnetic layer, directly on bilayer areas. This is due to the high sensitivity of the Andreev surface states to the physical properties of the ferromagnetic interlayer. △ Less

Submitted 18 July, 2014; originally announced July 2014.

Journal ref: Sci. Rep. 5, 17544 (2015)

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

Authors: A. Di Bartolomeo, S. Santandrea, F. Giubileo, F. Romeo, M. Petrosino, R. Citro, P. Barbara, G. Lupina, T. Schroeder, A. Rubino

Abstract: We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure tra… ▽ More We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing double dip feature that we explain as the effect of do** due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and in the channel at different gate voltage. △ Less

Submitted 9 October, 2012; originally announced October 2012.

Journal ref: Diamond and Related Materials 38 (2013) 19

Field emission from single and few-layer graphene flakes

Authors: S. Santandrea, F. Giubileo, V. Grossi, S. Santucci, M. Passacantando, T. Schroeder, G. Lupina, A. Di Bartolomeo

Abstract: We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 μA from the flat pa… ▽ More We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 μA from the flat part of graphene flakes at applied fields of few hundred V/μm. We found that emission process is stable over a period of several hours and that it is well described by a Fowler-Nordheim model for currents over 5 orders of magnitude. △ Less

Submitted 16 February, 2011; originally announced February 2011.

Journal ref: Applied Physics Letters 98, 163109 (2011)

Charge transfer and trap** as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

Authors: Antonio Di Bartolomeo, Filippo Giubileo, Salvatore Santandrea, Francesco Romeo, Roberta Citro, Thomas Schroeder, And Grzegorz Lupina

Abstract: We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel… ▽ More We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops. △ Less

Submitted 11 February, 2011; originally announced February 2011.

Comments: 14 pages, 5 figures

Journal ref: Nanotechnology 22 (2011) 275702

Field emission properties of as-grown multiwalled carbon nanotube films

Authors: F. Giubileo, A. Di Bartolomeo, M. Sarno, C. Altavilla, S. Santandrea, P. Ciambelli, A. M. Cucolo

Abstract: Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sampl… ▽ More Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sample. Buckypapers showed an interesting linear dependence in the Fowler-Nordheim plots demonstrating their suitability as emitters. By precisely tuning the tip-sample distance in the submicron region we found out that the field enhancement factor is not affected by distance variations up to 2um. Finally, the study of current stability showed that the field emission current with intensity of about 3,3*10-5A remains remarkably stable (within 5% fluctuations) for several hours. △ Less

Submitted 9 February, 2011; originally announced February 2011.

Comments: 18 pages, 5 figures

Journal ref: CARBON 50 (2012) 163-169

Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3 spin filters

Authors: Franco Rigato, Samanta Piano, Michael Foerster, Filippo Giubileo, Anna Maria Cucolo, Josep Fontcuberta

Abstract: We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficien… ▽ More We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficiency not larger than +13%. The observation of a moderate and positive spin filtering is discussed in the context of the microstructure of the barriers and symmetry-related spin filtering effects. △ Less

Submitted 26 April, 2010; originally announced April 2010.

Comments: 13 pages, 5 figures. To appear in Phys. Rev. B.

Journal ref: Phys. Rev. B 81, 174415 (2010)

Field emission from single multi-wall carbon nanotubes

Authors: M. Passacantando, F. Bussolotti, S. Santucci, A. Di Bartolomeo, F. Giubileo, L. Iemmo, A. M. Cucolo

Abstract: Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled car… ▽ More Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated. △ Less

Submitted 6 March, 2008; originally announced March 2008.

Comments: 16 pages, 5 figures

Journal ref: NANOTECHNOLOGY Volume: 19 Issue: 39 Article Number: 395701 Published: OCT 1 2008

Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes

Authors: F. Giubileo, A. Di Bartolomeo, A. Scarfato, L. Iemmo, F. Bobba, M. Passacantando, S. Santucci, A. M. Cucolo

Abstract: Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to me… ▽ More Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes. △ Less

Submitted 29 February, 2008; originally announced February 2008.

Comments: 15 pages, 7 figures

Journal ref: CARBON Volume: 47 Issue: 4 Pages: 1074-1080 Published: APR 2009

A local field emission study of partially aligned carbon-nanotubes by AFM probe

Authors: A. Di Bartolomeo, A. Scarfato, F. Giubileo, F. Bobba, M. Biasucci, A. M. Cucolo, S. Santucci, M. Passacantando

Abstract: We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventi… ▽ More We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$μ$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $γ\approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$μ$m at an inter-electrode distance of 1 $μ$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$Ω$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed. △ Less

Submitted 28 February, 2007; originally announced February 2007.

Journal ref: CARBON Volume: 45 Issue: 15 Pages: 2957-2971 Published: DEC 2007

Evidence of s-Wave Subdominant Order Parameter in YBCO from Break Junction Tunneling Spectra

Authors: A. I. Akimenko, F. Bobba, F. Giubileo, V. Gudimenko, A. Scarfato, A. M. Cucolo

Abstract: The tunneling spectra of YBa2Cu3O7 break-junctions have been investigated for the tunneling direction close to the node one. The zero-bias conductance peak (ZBCP) and Josephson current have been studied with temperature and magnetic field. The observed deep splitting of ZBCP which starts at Ts<20-30K is in agreement with the theory for the dx2-y2+-is order parameter [Y. Tanuma, Y. Tanaka, and S.… ▽ More The tunneling spectra of YBa2Cu3O7 break-junctions have been investigated for the tunneling direction close to the node one. The zero-bias conductance peak (ZBCP) and Josephson current have been studied with temperature and magnetic field. The observed deep splitting of ZBCP which starts at Ts<20-30K is in agreement with the theory for the dx2-y2+-is order parameter [Y. Tanuma, Y. Tanaka, and S. Kashiwaya, Phys. Rev. B 64, 214519 (2001)]. The low (0.04T) magnetic field depresses significantly such splitting. The 1/T temperature dependence of maximum Josephson current goes to saturation at T<Ts also confirming the mixed order parameter formation. △ Less

Submitted 24 April, 2007; v1 submitted 21 June, 2006; originally announced June 2006.

Comments: 4 pages, 4 figures

Local Tunneling Study of Three-Dimensional Order Parameter in the $π$-band of Al-doped MgB$_2$ Single Crystals

Authors: F. Giubileo, F. Bobba, A. Scarfato, A. M. Cucolo, A. Kohen, D. Roditchev, N. Zhigadlo, J. Karpinski

Abstract: We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Δ_π$ as a function of Al content. Temperature and magnet… ▽ More We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Δ_π$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the do** resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $Δ_π= 2.3$ meV for x=0.1, while the $Δ_π/ T_C$ ratio increases monotonously with do**. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}\simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $Δ_π$ on nanometer scale. △ Less

Submitted 13 April, 2006; originally announced April 2006.

Comments: 4 pages, 3 figures

Journal ref: Physical Review B 76, 024507 (2007)

Point Contact Spectra on YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ bilayers

Authors: Samanta Piano, Fabrizio Bobba, Adele De Santis, Filippo Giubileo, Alessandro Scarfato, Anna Maria Cucolo

Abstract: We present conductance characteristics of point contact junctions realized between a normal Pt-Ir tip and YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ (YBCO/LCMO) bilayers. The point contact characteristics show a zero bias conductance peak, as a consequence of the formation of Andreev bound states at the YBCO Fermi level. The temperature evolution of the spectra reveals a depressed zero b… ▽ More We present conductance characteristics of point contact junctions realized between a normal Pt-Ir tip and YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ (YBCO/LCMO) bilayers. The point contact characteristics show a zero bias conductance peak, as a consequence of the formation of Andreev bound states at the YBCO Fermi level. The temperature evolution of the spectra reveals a depressed zero bias peak and a reduced superconducting energy gap, both explainable in terms of spin polarization effects due to the LCMO layer. △ Less

Submitted 30 January, 2006; originally announced January 2006.

Comments: 4 pages, 4 EPS figures. Proceedings of EUCAS 2005. Accepted in Journal of Physics: Conference Series

Journal ref: Journal of Physics: Conference Series 43, 1123 (2006)

Pairing state in the rutheno-cuprate superconductor RuSr2GdCu2O8: A point contact Andreev Reflection Spectroscopy study

Authors: Samanta Piano, Fabrizio Bobba, Filippo Giubileo, Anna Maria Cucolo, Marcello Gombos, Antonio Vecchione

Abstract: The results of Point Contact Andreev Reflection Spectroscopy on polycrystalline RuSr$_2$GdCu$_2$O$_8$ pellets are presented. The wide variety of the measured spectra are all explained in terms of a modified BTK model considering a \emph{d-wave} symmetry of the superconducting order parameter. Remarkably low values of the energy gap $Δ=(2.8\pm 0.2)meV$ and of the $2Δ/k_BT_c\simeq 2$ ratio are in… ▽ More The results of Point Contact Andreev Reflection Spectroscopy on polycrystalline RuSr$_2$GdCu$_2$O$_8$ pellets are presented. The wide variety of the measured spectra are all explained in terms of a modified BTK model considering a \emph{d-wave} symmetry of the superconducting order parameter. Remarkably low values of the energy gap $Δ=(2.8\pm 0.2)meV$ and of the $2Δ/k_BT_c\simeq 2$ ratio are inferred. From the temperature evolution of the $dI/dV$ vs $V$ characteristics we extract a sublinear temperature dependence of the superconducting energy gap. The magnetic field dependence of the conductance spectra at low temperatures is also reported. From the $Δ$ vs $H$ evolution, a critical magnetic field $H_{c_2}\simeq 30 T$ is inferred. To properly explain the curves showing gap-like features at higher voltages, we consider the formation of a Josephson junction in series with the Point Contact junction, as a consequence of the granularity of the sample. △ Less

Submitted 30 January, 2006; v1 submitted 13 September, 2005; originally announced September 2005.

Comments: 8 pages, 7 EPS figures. Accepted in Phys. Rev. B

Journal ref: Phys. Rev. B 73, 064514 (2006)

Subharmonic gap structures and Josephson effect in MgB2/Nb micro-constrictions

Authors: Filippo Giubileo, Marco Aprili, Fabrizio Bobba, Samanta Piano, Alessandro Scarfato, Anna Maria Cucolo

Abstract: Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range between 4.2 K and 500 K. Above the Nb critical temperature T$_{C}^{Nb}$, the conduct… ▽ More Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range between 4.2 K and 500 K. Above the Nb critical temperature T$_{C}^{Nb}$, the conductance of the MgB$_2$/normal-metal constrictions behaves as predicted by the BTK model for low resistance contacts while high resistance junctions show quasiparticle tunneling characteristics. Consistently, from the whole set of data we infer the value $Δ_π = 2.5 \pm 0.2$ meV for the three-dimensional gap of MgB$_2$. Below T$_{C}^{Nb}$, low resistance contacts show Josephson current and subharmonic gap structures (SGS), due to multiple Andreev reflections. Simultaneous observations of both features, unambiguously indicate coupling of the 3D band of MgB$_2$ with the Nb superconducting order parameter. We found that the temperature dependence of the Josephson critical current follows the classical Ambegaokar-Baratoff behavior with a value $I_CR_N=(2.1 \pm 0.1)$ meV at low temperatures. △ Less

Submitted 30 January, 2006; v1 submitted 4 August, 2005; originally announced August 2005.

Comments: 8 pages, 5 figures. Replaced with published version

Journal ref: Phys. Rev. B 72, 174518 (2005)

Point Contact Study of the Superconducting Order Parameter in RuSr2GdCu2O8

Authors: Samanta Piano, Fabrizio Bobba, Filippo Giubileo, Anna Maria Cucolo, Antonio Vecchione

Abstract: We have performed a detailed study of the conductance characteristics obtained by point contact junctions realized between a normal Pt/Ir tip and syntered RuSr2GdCu2O8 (Ru-1212) samples. Indeed, this compound is subject of great interest due to the coexistence of both magnetic order and bulk superconductivity. In our experiments, the low temperature tunneling spectra reproducibly show a zero bia… ▽ More We have performed a detailed study of the conductance characteristics obtained by point contact junctions realized between a normal Pt/Ir tip and syntered RuSr2GdCu2O8 (Ru-1212) samples. Indeed, this compound is subject of great interest due to the coexistence of both magnetic order and bulk superconductivity. In our experiments, the low temperature tunneling spectra reproducibly show a zero bias conductance peak that can be well reproduced by a generalized BTK model in the case of d-wave symmetry of the superconducting order parameter. △ Less

Submitted 29 July, 2005; originally announced August 2005.

Comments: 3 pages, 2 figures, IJMPB style. Presented at New3SC5 Conference, China, June 2004

Journal ref: Int. J. Mod. Phys. B 19, 323 (2005)

Point-Contact Spectroscopy on RuSr2GdCu2O8

Authors: Samanta Piano, Fabrizio Bobba, Filippo Giubileo, Antonio Vecchione, Anna Maria Cucolo

Abstract: We present Point-Contact experiments on polycrystalline RuSr$_2$GdCu$_2$O$_8$ samples. The majority of tunneling curves shows a zero-bias conductance peak, which is modeled by assuming a d-wave pairing symmetry of the superconducting order parameter.The magnetic field dependence of the conductance spectra has been measured in very stable junctions. In some cases, due to the granularity of the sa… ▽ More We present Point-Contact experiments on polycrystalline RuSr$_2$GdCu$_2$O$_8$ samples. The majority of tunneling curves shows a zero-bias conductance peak, which is modeled by assuming a d-wave pairing symmetry of the superconducting order parameter.The magnetic field dependence of the conductance spectra has been measured in very stable junctions. In some cases, due to the granularity of the samples, clusters of grains in series introduce peculiar features in the conductance spectra. △ Less

Submitted 4 July, 2006; v1 submitted 29 July, 2005; originally announced August 2005.

Comments: 4 pages, 4 figures, published on Journal of Physics and Chemistry of Solids

Journal ref: Journal of Physics and Chemistry of Solids 67, 384 (2006)

Superconducting vortex profile from fixed point measurements The Lazy Fisherman tunnelling microscopy method

Authors: A. Kohen, T. Cren, Th. Proslier, Y. Noat, F. Giubileo, F. Bobba, A. M. Cucolo, W. Sacks D. Roditchev N. Zhigadlo, S. M. Kazakov, J. Karpinski

Abstract: We introduce a mode of operation for studying the vortex phase in superconductors using scanning tunnelling microscopy (STM). While in the conventional STM method, the tip is scanned over a sample in which a fixed vortex pattern is prepared, in our "Lazy Fisherman" method the STM tip is kept fixed at a selected location while the vortices are being moved by varying the applied magnetic field. By… ▽ More We introduce a mode of operation for studying the vortex phase in superconductors using scanning tunnelling microscopy (STM). While in the conventional STM method, the tip is scanned over a sample in which a fixed vortex pattern is prepared, in our "Lazy Fisherman" method the STM tip is kept fixed at a selected location while the vortices are being moved by varying the applied magnetic field. By continuously acquiring the local tunnelling conductance spectra, dI/dV(V), we detect the changes in the local density of states under the tip due to the vortex motion. With no need for scanning, the method permits one to extend the study of vortices to samples in which scanning is difficult or even impossible due to surface nonuniformity and allows one to study vortex dynamics. Using a statistical analysis of the spectra, we reconstruct the single vortex zero bias conductance profile. We apply the method to the c-axis face of an MgB$_2$ single crystal sample and obtain a vortex profile with a coherence length, xi of 57+-2 nm. △ Less

Submitted 3 May, 2005; originally announced May 2005.

Comments: The following article has been accepted by APL. After it is published, it will be found at http://apl.aip.org/

Two regimes in the magnetic field response of superconducting MgB$_2$

Authors: A. Kohen, F. Giubileo, Th. Proslier, F. Bobba, Y. Noat, A. Troianovski, A. M. Cucolo, W. Sacks, J. Klein, D. Roditchev, N. Zhigadlo, S. M. Kazakov, J. Karpinski

Abstract: Using Scanning Tunneling Microscope at low temperature we explore the superconducting phase diagram in the $π$-band of the two-band superconductor MgB$_2$. In this band the peculiar shape of the local tunneling spectra and their dynamics in the magnetic field reveal the complex character of the quasiparticle density of states (DOS). The gap in the DOS is first rapidly filled with states in raisi… ▽ More Using Scanning Tunneling Microscope at low temperature we explore the superconducting phase diagram in the $π$-band of the two-band superconductor MgB$_2$. In this band the peculiar shape of the local tunneling spectra and their dynamics in the magnetic field reveal the complex character of the quasiparticle density of states (DOS). The gap in the DOS is first rapidly filled with states in raising the magnetic field up to 0.5 T and then slowly approaches the normal state value : The gap is observed up to 2 T. Such a change in the DOS dynamics suggests the existence of two terms in the DOS of the $π$-band: a first one, reflecting an intrinsic superconductivity in the band and a second one, originating from an inter-band coupling to the $σ$-band. Our findings allow a deeper understanding of the unique phase diagram of MgB$_2$. △ Less

Submitted 29 March, 2004; originally announced March 2004.

Comments: 4 pages, 3 figures

Two Gap State Density in MgB$_{2}$: A True Bulk Property or A Proximity Effect?

Authors: F. Giubileo, D. Roditchev, W. Sacks, R. Lamy, D. X. Thanh, J. Klein, S. Miraglia, D. Fruchart, J. Marcus, Ph. Monod

Abstract: We report on the temperature dependence of the quasiparticle density of states (DOS) in the simple binary compound MgB2 directly measured using scanning tunneling microscope (STM). To achieve high quality tunneling conditions, a small crystal of MgB2 is used as a tip in the STM experiment. The ``sample'' is chosen to be a 2H-NbSe2 single crystal presenting an atomically flat surface. At low temp… ▽ More We report on the temperature dependence of the quasiparticle density of states (DOS) in the simple binary compound MgB2 directly measured using scanning tunneling microscope (STM). To achieve high quality tunneling conditions, a small crystal of MgB2 is used as a tip in the STM experiment. The ``sample'' is chosen to be a 2H-NbSe2 single crystal presenting an atomically flat surface. At low temperature the tunneling conductance spectra show a gap at the Fermi energy followed by two well-pronounced conductance peaks on each side. They appear at voltages V$_{S}\simeq \pm 3.8$ mV and V$_{L}\simeq \pm 7.8$ mV. With rising temperature both peaks disappear at the Tc of the bulk MgB2, a behavior consistent with the model of two-gap superconductivity. The explanation of the double-peak structure in terms of a particular proximity effect is also discussed. △ Less

Submitted 24 July, 2001; v1 submitted 30 May, 2001; originally announced May 2001.

Comments: 4 pages, 3 figures

Journal ref: Physical Review Letters 87, 177008 (2001)

Strong Coupling and Double Gap Density of States in Superconducting MgB2

Authors: F. Giubileo, D. Roditchev, W. Sacks, R. Lamy, J. Klein

Abstract: Using scanning tunneling spectroscopy at T = 4.2 K, we perform simultaneously the topographic imaging and the quasiparticle density of states (DOS) map** in granular MgB2. We observe a new type of spectrum, showing a pronounced double gap, with the magnitudes of Delta_S = 3.9 meV and Delta_L = 7.5 meV, i.e. well below and well above the BCS limit. The largest gap value gives the ratio 2*Delta_… ▽ More Using scanning tunneling spectroscopy at T = 4.2 K, we perform simultaneously the topographic imaging and the quasiparticle density of states (DOS) map** in granular MgB2. We observe a new type of spectrum, showing a pronounced double gap, with the magnitudes of Delta_S = 3.9 meV and Delta_L = 7.5 meV, i.e. well below and well above the BCS limit. The largest gap value gives the ratio 2*Delta_L/k_B T_c = 4.5, which implies strong electron-phonon coupling. Other superconducting regions are found to have a characteristic BCS-shaped DOS. However, the variation of the spectral shape and lower gap widths, from 2.0 meV to 6.5 meV, indicate the importance of surface inhomogeneity and proximity effects in previously published tunneling data. Our finding gives no evidence for any important gap anisotropy. Instead, it strongly supports the multiple gap scenario in MgB2 in the clean limit, and the single gap scenario in the dirty limit. △ Less

Submitted 24 July, 2001; v1 submitted 7 May, 2001; originally announced May 2001.

Comments: 4 pages, 4 figures. 1 figure added, text revised

Journal ref: EuroPhys. Lett. 58, 764 (2002)