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Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals
Authors:
Hugo Henck,
Debora Pierucci,
Jihene Zribi,
Federico Bisti,
Evangelos Papalazarou,
Jean Christophe Girard,
Julien Chaste,
Francois Bertran,
Patrick Le Fevre,
Fausto Sirotti,
Luca Perfetti,
Christine Giorgetti,
Abhay Shukla,
Julien E. Rault,
Abdelkarim Ouerghi
Abstract:
Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depend…
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Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic
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Submitted 24 January, 2019;
originally announced January 2019.
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Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Authors:
Zhesheng Chen,
Christine Giorgetti,
Jelena Sjakste,
Raphael Cabouat,
Valerie Veniard,
Zailan Zhang,
Amina Taleb-Ibrahimi,
Evangelos Papalazarou,
Marino Marsi,
Abhay Shukla,
Jacques Peretti,
Luca Perfetti
Abstract:
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculati…
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We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\bar M$ valley could travel through a multilayer flake of InSe with lateral size of 1 micrometer. The hot carriers pave a viable route to the realization of below-bandgap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.
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Submitted 26 May, 2018;
originally announced May 2018.
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Exciton band structure in two-dimensional materials
Authors:
Pierluigi Cudazzo,
Lorenzo Sponza,
Christine Giorgetti,
Lucia Reining,
Francesco Sottile,
Matteo Gatti
Abstract:
Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not poss…
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Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not possible in low-dimensional materials, where the binding energy is large and comparable in size for excitons of very different localization. Here we demonstrate that the exciton band structure, which can be accessed experimentally, instead provides a powerful way to identify the exciton character. By comparing the ab initio solution of the many-body Bethe-Salpeter equation for graphane and single-layer hexagonal BN, we draw a general picture of the exciton dispersion in two-dimensional materials, highlighting the different role played by the exchange electron-hole interaction and by the electronic band structure. Our interpretation is substantiated by a prediction for phosphorene.
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Submitted 31 December, 2015;
originally announced December 2015.
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Excitons and stacking order in h-BN
Authors:
Romain Bourrellier,
Michele Amato,
Luiz Henrique Galvão Tizei,
Christine Giorgetti,
Alexandre Gloter,
Malcolm I. Heggie,
Katia March,
Odile Stéphan,
Lucia Reining,
Mathieu Kociak,
Alberto Zobelli
Abstract:
The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic orig…
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The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.
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Submitted 9 January, 2014;
originally announced January 2014.
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Anomalous Angular Dependence of the Dynamic Structure Factor near Bragg Reflections: Graphite
Authors:
R. Hambach,
C. Giorgetti,
N. Hiraoka,
Y. Q. Cai,
F. Sottile,
A. G. Marinopoulos,
F. Bechstedt,
Lucia Reining
Abstract:
The electron energy-loss function of graphite is studied for momentum transfers q beyond the first Brillouin zone. We find that near Bragg reflections the spectra can change drastically for very small variations in q. The effect is investigated by means of first principle calculations in the random phase approximation and confirmed by inelastic x-ray scattering measurements of the dynamic structur…
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The electron energy-loss function of graphite is studied for momentum transfers q beyond the first Brillouin zone. We find that near Bragg reflections the spectra can change drastically for very small variations in q. The effect is investigated by means of first principle calculations in the random phase approximation and confirmed by inelastic x-ray scattering measurements of the dynamic structure factor S(q,ω). We demonstrate that this effect is governed by crystal local field effects and the stacking of graphite. It is traced back to a strong coupling between excitations at small and large momentum transfers.
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Submitted 29 April, 2010;
originally announced April 2010.
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Ab initio GW many-body effects in graphene
Authors:
P. E. Trevisanutto,
C. Giorgetti,
L. Reining,
M. Ladisa,
V. Olevano
Abstract:
We present an {\it ab initio} many-body GW calculation of the self-energy, the quasiparticle band plot and the spectral functions in free-standing undoped graphene. With respect to other approaches, we numerically take into account the full ionic and electronic structure of real graphene and we introduce electron-electron interaction and correlation effects from first principles. Both non-hermit…
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We present an {\it ab initio} many-body GW calculation of the self-energy, the quasiparticle band plot and the spectral functions in free-standing undoped graphene. With respect to other approaches, we numerically take into account the full ionic and electronic structure of real graphene and we introduce electron-electron interaction and correlation effects from first principles. Both non-hermitian and also dynamical components of the self-energy are fully taken into account. With respect to DFT-LDA, the Fermi velocity is substantially renormalized and raised by a 17%, in better agreement with magnetotransport experiments. Furthermore, close to the Dirac point the linear dispersion is modified by the presence of a kink, as observed in ARPES experiments. Our calculations show that the kink is due to low-energy $π\to π^*$ single-particle excitations and to the $π$ plasmon. Finally, the GW self-energy does not open the band gap.
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Submitted 2 December, 2008; v1 submitted 20 June, 2008;
originally announced June 2008.
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Linear plasmon dispersion in single-wall carbon nanotubes and the collective excitation spectrum of graphene
Authors:
C. Kramberger,
R. Hambach,
C. Giorgetti,
M. H. Rummeli,
M. Knupfer,
J. Fink,
B. Buchner,
L. Reining,
E. Einarsson,
S. Maruyama,
F. Sottile,
K. Hannewald,
V. Olevano,
A. G. Marinopoulos,
T. Pichler
Abstract:
We have measured a strictly linear pi-plasmon dispersion along the axis of individualized single wall carbon nanotubes, which is completely different from plasmon dispersions of graphite or bundled single wall carbon nanotubes. Comparative ab initio studies on graphene based systems allow us to reproduce the different dispersions. This suggests that individualized nanotubes provide viable experi…
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We have measured a strictly linear pi-plasmon dispersion along the axis of individualized single wall carbon nanotubes, which is completely different from plasmon dispersions of graphite or bundled single wall carbon nanotubes. Comparative ab initio studies on graphene based systems allow us to reproduce the different dispersions. This suggests that individualized nanotubes provide viable experimental access to collective electronic excitations of graphene, and it validates the use of graphene to understand electronic excitations of carbon nanotubes. In particular, the calculations reveal that local field effects (LFE) cause a mixing of electronic transitions, including the 'Dirac cone', resulting in the observed linear dispersion.
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Submitted 4 February, 2008;
originally announced February 2008.
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Rare earth contributions to the X-ray magnetic circular dichroism at the Co K edge in rare earth-cobalt compounds investigated by multiple-scattering calculations
Authors:
J. P. Rueff,
R. M. Galera,
Ch. Giorgetti,
E. Dartyge,
Ch. Brouder,
M. Alouani
Abstract:
The X-ray magnetic circular dichroism (XMCD) has been measured at the Co K edge in Co-hcp and R-Co compounds (R=La, Tb, Dy). The structure of the experimental XMCD spectra in the near-edge region has been observed to be highly sensitive to the magnetic environment of the absorbing site. Calculations of the XMCD have been carried out at the Co K edge in Co metal, LaCo$_5$ and TbCo$_5$ within the…
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The X-ray magnetic circular dichroism (XMCD) has been measured at the Co K edge in Co-hcp and R-Co compounds (R=La, Tb, Dy). The structure of the experimental XMCD spectra in the near-edge region has been observed to be highly sensitive to the magnetic environment of the absorbing site. Calculations of the XMCD have been carried out at the Co K edge in Co metal, LaCo$_5$ and TbCo$_5$ within the multiple-scattering framework including the spin-orbit coupling. In the three systems, the XMCD spectra in the near-edge region are well reproduced. The possibility to separate and quantitatively estimate the local effects from those due to the neighboring atoms in the XMCD cross section makes possible a more physical understanding of the spectra. The present results emphasize the major role played by the $d$ states of the Tb ions in the XMCD spectrum at the Co K edge in the TbCo$_5$ compound.
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Submitted 10 July, 1998; v1 submitted 5 May, 1998;
originally announced May 1998.
