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First results on monolithic CMOS detector with internal gain
Authors:
U. Follo,
G. Gioachin,
C. Ferrero,
M. Mandurrino,
M. Bregant,
S. Bufalino,
F. Carnesecchi,
D. Cavazza,
M. Colocci,
T. Corradino,
M. Da Rocha Rolo,
G. Di Nicolantonio,
S. Durando,
G. Margutti,
M. Mignone,
R. Nania,
L. Pancheri,
A. Rivetti,
B. Sabiu,
G. G. A. de Souza,
S. Strazzi,
R. Wheadon
Abstract:
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the elect…
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In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the do** profile extracted from $C(V)$ measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future do** concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlap** events and it will also be crucial for Particle IDentification (PID).
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Submitted 28 June, 2024;
originally announced June 2024.
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High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
Authors:
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
L. Lanteri,
M. Mandurrino,
L. Menzio,
R. Mulargia,
L. Pancheri,
G. Paternoster,
A. Rojas,
H-F W. Sadrozinski,
A. Seiden,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen…
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The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.
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Submitted 24 November, 2022;
originally announced November 2022.
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A Compensated Design of the LGAD Gain Layer
Authors:
Valentina Sola,
Roberta Arcidiacono,
Patrick Asenov,
Giacomo Borghi,
Maurizio Boscardin,
Nicolò Cartiglia,
Matteo Centis Vignali,
Tommaso Croci,
Marco Ferrero,
Alessandro Fondacci,
Giulia Gioachin,
Simona Giordanengo,
Leonardo Lantieri,
Marco Mandurrino,
Luca Menzio,
Vincenzo Monaco,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri,
Nadia Pastrone,
Giovanni Paternoster,
Federico Siviero,
Amedeo Staiano,
Marta Tornago
Abstract:
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim…
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In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor do** will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
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Submitted 1 September, 2022;
originally announced September 2022.
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Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution
Authors:
Marta Tornago,
Flavio Giobergia,
Luca Menzio,
Federico Siviero,
Roberta Arcidiacono,
Nicolò Cartiglia,
Marco Costa,
Marco Ferrero,
Giulia Gioachin,
Marco Mandurrino,
Valentina Sola
Abstract:
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surfa…
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Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms.
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Submitted 2 November, 2022; v1 submitted 17 August, 2022;
originally announced August 2022.
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DC-coupled resistive silicon detectors for 4-D tracking
Authors:
L. Menzio,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat…
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In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.
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Submitted 14 April, 2022;
originally announced April 2022.
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4D Tracking: Present Status and Perspective
Authors:
N. Cartiglia,
R. Arcidiacono,
M. Costa,
M. Ferrero,
G. Gioachin,
M. Mandurrino,
L. Menzio,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentat…
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The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trap** in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field.
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Submitted 11 July, 2022; v1 submitted 13 April, 2022;
originally announced April 2022.
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First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board
Authors:
F. Siviero,
F. Giobergia,
L. Menzio,
F. Miserocchi,
M. Tornago,
R. Arcidiacono,
N. Cartiglia,
M. Costa,
M. Ferrero,
G. Gioachin,
M. Mandurrino,
V. Sola
Abstract:
Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multi…
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Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of $\sim$~5.5~\mum.
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Submitted 13 April, 2022;
originally announced April 2022.
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Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors
Authors:
Federico Siviero,
Roberta Arcidiacono,
Giacomo Borghi,
Maurizio Boscardin,
Nicolo Cartiglia,
Matteo Centis Vignali,
Marco Costa,
Gian Franco Dalla Betta,
Marco Ferrero,
Francesco Ficorella,
Giulia Gioachin,
Marco Mandurrino,
Simone Mazza,
Luca Menzio,
Lucio Pancheri,
Giovanni Paternoster,
Hartmut F. W. Sadrozinski,
Abraham Seiden,
Valentina Sola,
Marta Tornago
Abstract:
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been…
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In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.
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Submitted 8 March, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
