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Electron transport in a slot-gate Si MOSFET
Authors:
I. Shlimak,
v. Ginodman,
A. Butenko,
K. -J. Friedland,
S. V. Kravchenko
Abstract:
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is…
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The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientations.
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Submitted 31 March, 2008;
originally announced March 2008.
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Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime
Authors:
I. Shlimak,
V. Ginodman,
K. -J. Friedland,
S. V. Kravchenko
Abstract:
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skip** the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "d…
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We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skip** the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "dives" to the value 1/5(h/e^2) characteristic of the ν=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting when the Fermi level is in the middle between two adjacent valley-split Landau bands with the asymmetric position of the extended states.
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Submitted 16 February, 2006;
originally announced February 2006.
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Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime
Authors:
I. Shlimak,
V. Ginodman,
A. B. Gerber,
A. Milner,
K. -J. Friedland,
D. J. Paul
Abstract:
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the inv…
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We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the investigated sample n-Si/Si_{0.7}Ge_{0.3}, overshoots exist for almost all ν. Existence of overshoot in R_{xy} observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves R_{xy}(ν) for ν= 3 and ν= 5 with and without overshoot showed that this effect exist in the whole interval between plateaus, not only in the region where R_{xy} exceeds the normal plateau value.
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Submitted 3 February, 2005;
originally announced February 2005.
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Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors
Authors:
I. Shlimak,
V. Ginodman,
M. Levin,
M. Potemski,
D. K. Maude,
K. -J. Friedland,
D. J. Paul
Abstract:
We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction:…
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We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction: $Δσ_{xx}(T)\sim \ln T$. For even $i$, when $E_{F}$ is located between cyclotron-split levels or spin-split levels, $σ_{xx}\sim \exp[-Δ_{i}/T]$ for $i=6,10,12$ and $\sim \exp [-(T_{0i}/T)]^{1/2}$ for $i=4,8$. For further decrease of $T$, all dependences $σ_{xx}(T)$ tend to almost temperature-independent residual conductivity $σ_{i}(0)$. A possible mechanism for $σ_{i}(0)$ is discussed.
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Submitted 29 July, 2003;
originally announced July 2003.
