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Engineering tunnel junctions on ballistic semiconductor nanowires
Authors:
J. Damasco,
S. T. Gill,
S. Gazibegovic,
G. Badawy,
E. P. A. M. Bakkers,
N. Mason
Abstract:
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb…
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Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal non-equilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and allows for new tools to characterize the local density of states.
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Submitted 30 April, 2019;
originally announced April 2019.
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Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires
Authors:
S. T. Gill,
J. Damasco,
B. E. Janicek,
M. S. Durkin,
V. Humbert,
S. Gazibegovic,
D. Car,
E. P. A. M. Bakkers,
P. Y. Huang,
N. Mason
Abstract:
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the supercon…
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Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.
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Submitted 11 September, 2018; v1 submitted 20 March, 2018;
originally announced March 2018.
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Finite momentum Cooper pairing in 3D topological insulator Josephson junctions
Authors:
Angela Q. Chen,
Moon Jip Park,
Stephen T. Gill,
Yiran Xiao,
Gregory J. MacDougall,
Matthew J. Gilbert,
Nadya Mason
Abstract:
Unconventional superconductivity arising from the interplay between strong spin-orbit coupling and magnetism is an intensive area of research. One form of unconventional superconductivity arises when Cooper pairs subjected to a magnetic exchange coupling acquire a finite momentum. Here, we report on a signature of finite momentum Cooper pairing in the 3D topological insulator Bi2Se3. We apply in-p…
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Unconventional superconductivity arising from the interplay between strong spin-orbit coupling and magnetism is an intensive area of research. One form of unconventional superconductivity arises when Cooper pairs subjected to a magnetic exchange coupling acquire a finite momentum. Here, we report on a signature of finite momentum Cooper pairing in the 3D topological insulator Bi2Se3. We apply in-plane and out-of-plane magnetic fields to proximity-coupled Bi2Se3 and find that the in-plane field creates a spatially oscillating superconducting order parameter in the junction as evidenced by the emergence of an anomalous Fraunhofer pattern. We describe how the anomalous Fraunhofer patterns evolve for different device parameters, and we use this to understand the microscopic origin of the oscillating order parameter. The agreement between the experimental data and simulations shows that the finite momentum pairing originates from the coexistence of the Zeeman effect and Aharonov-Bohm flux.
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Submitted 25 January, 2018;
originally announced January 2018.
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Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires
Authors:
S. T. Gill,
J. Damasco,
D. Car,
E. P. A. M. Bakkers,
N. Mason
Abstract:
Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstra…
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Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems has shown evidence for Majorana bound states, but these experiments were also marked by disorder, which disrupts ballistic transport. In this letter, we demonstrate ballistic transport in InSb nanowires interfaced directly with superconducting Al by observing quantized conductance at zero-magnetic field. Additionally, we demonstrate that the nanowire is proximity coupled to the superconducting contacts by observing Andreev reflection. These results are important steps for robustly establishing topological superconductivity in InSb nanowires.
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Submitted 5 December, 2016;
originally announced December 2016.
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Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays
Authors:
Stephen T. Gill,
John H. Hinnefeld,
Shuze Zhu,
William T. Swanson,
Teng Li,
Nadya Mason
Abstract:
Strain can tune desirable electronic behavior in graphene, but there has been limited progress in controlling strain in graphene devices. In this paper, we study the mechanical response of graphene on substrates patterned with arrays of mesoscale pyramids. Using atomic force microscopy, we demonstrate that the morphology of graphene can be controlled from conformal to suspended depending on the ar…
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Strain can tune desirable electronic behavior in graphene, but there has been limited progress in controlling strain in graphene devices. In this paper, we study the mechanical response of graphene on substrates patterned with arrays of mesoscale pyramids. Using atomic force microscopy, we demonstrate that the morphology of graphene can be controlled from conformal to suspended depending on the arrangement of pyramids and the aspect ratio of the array. Non-uniform strains in graphene suspended across pyramids are revealed by Raman spectroscopy and supported by atomistic modeling, which also indicates strong pseudomagnetic fields in the graphene. Our results suggest that incorporating mesoscale pyramids in graphene devices is a viable route to achieving strain-engineering of graphene.
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Submitted 6 July, 2015;
originally announced July 2015.
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Reversible mechanical and electrical properties of ripped graphene
Authors:
J. Henry Hinnefeld,
Stephen T. Gill,
Shuze Zhu,
William J. Swanson,
Teng Li,
Nadya Mason
Abstract:
We examine the mechanical properties of graphene devices stretched on flexible elastomer substrates. Using atomic force microscopy, transport measurements, and mechanics simulations, we show that micro-rips form in the graphene during the initial application of tensile strain; however subsequent applications of the same tensile strain elastically open and close the existing rips. Correspondingly,…
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We examine the mechanical properties of graphene devices stretched on flexible elastomer substrates. Using atomic force microscopy, transport measurements, and mechanics simulations, we show that micro-rips form in the graphene during the initial application of tensile strain; however subsequent applications of the same tensile strain elastically open and close the existing rips. Correspondingly, while the initial tensile strain degrades the devices' transport properties, subsequent strain-relaxation cycles affect transport only moderately, and in a largely reversible fashion, yielding robust electrical transport even after partial mechanical failure.
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Submitted 22 September, 2014; v1 submitted 1 July, 2014;
originally announced July 2014.